VSIB680

New Product VSIB620 thru VSIB680 Vishay General Semiconductor Single-Phase Single In-Line Bridge Rectifiers FEATURES • UL recognition file number E54214 • Thin single in-line package • Glass passivated chip junction • High surge current capability • High case dielectric strength of 1500 VRMS • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications. 6.0 A 200 V to 800 V 180 A 10 µA 0.95 V 150 °C ~ ~ ~ ~ Case Style GSIB-5S PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF TJ max. MECHANICAL DATA Case: GSIB-5S Epoxy meets UL 94 V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified output current at TC = 100 °C TA = 25 °C SYMBOL VRRM VRMS VDC IF(AV) IFSM I 2t TJ, TSTG VSIB620 200 140 200 VSIB640 400 280 400 6.0 2.8 (2) 180 120 - 55 to + 150 (1) VSIB660 600 420 600 VSIB680 800 560 800 UNIT V V V A A A2 s °C Peak forward surge current single sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range Notes: (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length Document Number: 84656 Revision: 15-Dec-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product VSIB620 thru VSIB680 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode TEST CONDITIONS 3.0 A TA = 25 °C TA = 125 °C SYMBOL VF IR VSIB620 VSIB640 0.95 10 250 VSIB660 VSIB680 UNIT V µA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance Notes: (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length (3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw SYMBOL RθJA RθJC VSIB620 VSIB640 VSIB660 (2) VSIB680 UNIT °C/W 22 3.4 (1) ORDERING INFORMATION (Example) PREFERRED P/N VSIB660-E3/45 UNIT WEIGHT (g) 7.0 PREFERRED PACKAGE CODE 45 BASE QUANTITY 20 DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 210 Heatsink Mounting, TC Average Forward Output Current (A) Peak Forward Surge Current (A) 180 150 120 90 60 30 0 TJ = TJ Max. Single Sine-Wave 8 6 4 P.C.B. Mounting, TA 2 1.0 Cycle 0 0 50 100 150 1 10 100 Temperature (°C) Number of Cycles at 60 Hz Figure 1. Derating Curve Output Rectified Current Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 84656 Revision: 15-Dec-08 New Product VSIB620 thru VSIB680 Vishay General Semiconductor 100 1000 TJ = 150 °C Instantaneous Forward Current (A) 10 Junction Capacitance (pF) 1.2 100 TJ = 25 °C 1 0.1 TJ = 125 °C 10 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 1000 TJ = 150 °C 100 TJ = 125 °C 10 100 Transient Thermal Impedance (°C/W) 100 Instantaneous Reverse Current (µA) 10 1 1 0.1 TJ = 25 °C 0.01 20 40 60 80 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Heating Time (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in millimeters Case Style GSIB-5S 4.6 ± 0.2 3.6 ± 0.2 3.5 ± 0.2 3.2 ± 0.2 2.7 ± 0.2 30 ± 0.3 20 ± 0.3 + 2.5 ± 0.2 2.2 ± 0.2 1 ± 0.1 10 ± 0.2 17.5 ± 0.5 4 ± 0.2 7.5 ± 0.2 7.5 ± 0.2 0.7 ± 0.1 11 ± 0.2 5 Document Number: 84656 Revision: 15-Dec-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1