VSKD236_10

VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules) FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips • Modules uses high voltage power diodes in four basic configurations • Simple mounting INT-A-PAK • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for multiple level PRODUCT SUMMARY IF(AV) Type 165 A to 230 A Modules - Diode, High Voltage APPLICATIONS • DC motor control and drives • Battery chargers • Welders • Power converters MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) IF(RMS) IFSM I2t I2t VRRM TJ Range 50 Hz 60 Hz 50 Hz 60 Hz CHARACTERISTICS VSK.166.. 165 TC 100 260 4000 4200 80 73 798 VSK.196.. 195 100 305 4750 4980 113 103 1130 400 to 1600 - 40 to 150 VSK.236.. 230 100 360 5500 5765 151 138 1516 kA2s kA2s V °C A UNITS A °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 VSK.166 VSK.196 VSK.236 08 12 14 16 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 800 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 900 1300 1500 1700 20 IRRM AT 150 °C mA Document Number: 94357 Revision: 20-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules) FORWARD CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle on-state, non-repetitive surge current SYMBOL IF(AV) IF(RMS) t = 10 ms IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I 2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VF(TO)1 VF(TO)2 rt1 rt2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sine half wave, initial TJ = TJ maximum TEST CONDITIONS 180° conduction, half sine wave VSK.166 VSK.196 VSK.236 165 100 260 4000 4200 3350 3500 80 73 56 52 798 0.73 0.88 1.5 1.26 1.43 195 100 305 4750 4980 4000 4200 113 103 80 73 1130 0.69 0.78 1.3 1.2 1.38 230 100 360 5500 5765 4630 4850 151 138 107 98 1516 0.7 0.83 1.2 1.07 1.46 V kA2s V kA2s A UNITS A °C t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum (I >  x IF(AV)), TJ maximum (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum (I >  x IF(AV)), TJ maximum IFM =  x IF(AV), TJ = 25 °C, 180° conduction Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 Low level value of threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state Maximum forward voltage drop m BLOCKING PARAMETER Maximum peak reverse and off-state leakage current RMS insulation voltage SYMBOL IRRM VINS TJ = 150 °C 50 Hz, circuit to base, all terminals shorted, t=1s TEST CONDITIONS VSK.166 VSK.196 VSK.236 20 3500 UNITS mA V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink per module Mounting torque ± 10 % Approximate weight Case style IAP to heatsink busbar to IAP SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface smooth, flat and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 0.2 TEST CONDITIONS VALUES VSK.166 VSK.196 VSK.236 - 40 to 150 0.16 0.05 4 to 6 200 7.1 INT-A-PAK Nm g oz. 0.14 K/W UNITS °C www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94357 Revision: 20-May-10 VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series Standard Recovery Diodes, 165 A to 230 A Vishay Semiconductors (INT-A-PAK Power Modules) R CONDUCTION PER JUNCTION DEVICES 180° VSK.166 VSK.196 VSK.236 0.025 0.016 0.009 SINUSOIDAL CONDUCTION AT TJ MAXIMUM 120° 0.03 0.019 0.010 90° 0.038 0.024 0.014 60° 0.055 0.034 0.018 30° 0.089 0.053 0.025 180° 0.018 0.012 0.008 RECTANGULAR CONDUCTION AT TJ MAXIMUM 120° 0.031 0.02 0.012 90° 0.041 0.026 0.015 60° 0.057 0.035 0.019 30° 0.089 0.054 0.025 K/W UNITS Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 150 250 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 140 130 VSK.166.. Series RthJC (DC) = 0.20 K/W 200 Ø 180° 120° 90° 60° 30° RMS limit 120 110 100 90 80 70 Conduction angle 150 100 Ø 30° 60° 90° 120° 180° Conduction angle 50 VSK.166.. Series TJ = 150 °C 0 40 80 120 160 200 0 0 40 80 120 160 200 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Average Forward Current (A) Fig. 3 - On-State Power Loss Characteristics 150 300 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 140 130 120 110 100 90 80 70 VSK.166.. Series RthJC (DC) = 0.20 K/W 250 200 150 Ø Conduction period DC 180° 120° 90° 60° 30° RMS limit 30° 60° 90° 120° 180° 0 50 100 150 200 DC Ø 100 50 0 Conduction period VSK.166.. Series Per junction TJ = 150 °C 0 50 100 150 200 250 300 250 300 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Average Forward Current (A) Fig. 4 - On-State Power Loss Characteristics Document Number: 94357 Revision: 20-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules) 4000 3500 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) 3000 2500 2000 1500 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 4000 3500 3000 2500 2000 1500 1000 500 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied VSK.166.. Series 1000 VSK.166.. Series 1 10 100 0.01 0.1 1 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current 300 250 200 150 100 50 0 300 250 200 0.7 0. 4 0. K/ W R thS 0.2 3 Maximum Total Forward Power Loss (W) Maximum Total Forward Power Loss (W) DC 0.5 K/ W K/ W A =0 K/ .12 W K/ W 150 100 50 0 K/W R -Δ VSK.166.. Series Per junction TJ = 150 °C 0 50 100 150 200 250 0 25 50 75 100 125 150 Total RMS Output Current (A) Fig. 7 - On-State Power Loss Characteristics Maximum Allowable Ambient Temperature (°C) 1800 1800 Maximum Total Power Loss (W) 1600 1400 1200 1000 800 600 400 200 0 Maximum Total Power Loss (W) + ~ - 180° (Sine) 180° (Rect) 1600 1400 1200 1000 800 600 400 200 0 R 0.0 th SA = 2 x VSK.166.. Series Single phase bridge Connected TJ = 150 °C 0 100 200 300 400 500 /W 0.0 6K /W 0.1 K/W 0.16 K/W 0.25 K/W 0.5 K/W 4K 0. 12 K/ W -Δ R 0 25 50 75 100 125 150 Total Output Current (A) Fig. 8 - On-State Power Loss Characteristics Maximum Allowable Ambient Temperature (°C) www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94357 Revision: 20-May-10 VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series Standard Recovery Diodes, 165 A to 230 A Vishay Semiconductors (INT-A-PAK Power Modules) 1600 1600 Maximum Total Power Loss (W) Maximum Total Power Loss (W) R th 1400 1200 1000 800 600 400 200 0 1400 1200 1000 800 600 400 200 0 04 0. W K/ 0. ~ - 120° (Rect) 06 SA K/ = W 02 0. W K/ 0.1 K/W R -Δ 0.1 6K /W 0.25 3 x VSK.166.. Series Three phase bridge Connected TJ = 150 °C 0 100 200 300 400 500 K/W 0.5 K/W 0 25 50 75 100 125 150 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-State Power Loss Characteristics 150 300 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 140 130 120 110 100 90 80 70 VSK.196.. Series RthJC (DC) = 0.16 K/W 250 200 150 100 50 0 Ø 180° 120° 90° 60° 30° RMS limit Conduction angle 30° 60° 90° 120° 180° 0 50 100 150 200 250 Ø Conduction angle VSK.196.. Series TJ = 150 °C 0 40 80 120 160 200 Average Forward Current (A) Fig. 10 - Current Ratings Characteristics Average Forward Current (A) Fig. 12 - On-State Power Loss Characteristics 150 350 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 140 130 VSK.196.. Series RthJC (DC) = 0.16 K/W 300 250 200 150 100 50 0 Ø 120 110 100 90 80 70 Conduction period DC 180° 120° 90° 60° 30° RMS limit 30° 60° 90° 120° 180° DC 0 50 100 150 200 250 300 350 Ø Conduction period VSK.196.. Series Per junction TJ = 150 °C 0 50 100 150 200 250 300 350 Average Forward Current (A) Fig. 11 - Current Ratings Characteristics Average Forward Current (A) Fig. 13 - On-State Power Loss Characteristics Document Number: 94357 Revision: 20-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules) 4500 4000 5000 4500 Peak Half Sine Wave Forward Current (A) Peal Half Sine Wave Forward Current (A) 3500 3000 2500 2000 1500 1000 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 4000 3500 3000 2500 2000 1500 1000 0.01 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied VSK.196.. Series VSK.196.. Series 0.1 1.0 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current Pulse Train Duration (s) Fig. 15 - Maximum Non-Repetitive Surge Current 350 300 250 200 150 100 50 0 350 R th Maximum Total Forward Power Loss (W) Maximum Total Forward Power Loss (W) 300 0.4 0. 0. 3 SA 2 K/ W DC K/ .12 =0 W 250 200 150 100 50 0 0.5 0.7 K/ W K/ K/W W R -Δ K/W VSK.196.. Series Per junction TJ = 150 °C 0 50 100 150 200 250 300 0 25 50 75 100 125 150 Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 16 - On-State Power Loss Characteristics 1200 1200 Maximum Total Power Loss (W) Maximum Total Power Loss (W) + 1000 800 600 400 200 0 ~ - 180° (Sine) 180° (Rect) 1000 800 600 400 200 0 2 x VSK.196.. Series Single phase bridge Connected TJ = 150 °C 0 100 200 300 400 0. 06 0.0 8 K K/W /W 0.1 2K /W 0.1 6K /W 0.25 K/W 0.4 K /W 0.7 K/W R th SA 04 0. W K/ = 0. 02 K/ W R -Δ 125 0 25 50 75 100 150 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 17 - On-State Power Loss Characteristics www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94357 Revision: 20-May-10 VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series Standard Recovery Diodes, 165 A to 230 A Vishay Semiconductors (INT-A-PAK Power Modules) 1800 1800 + ~ 120° (Rect) Maximum Total Power Loss (W) Maximum Total Power Loss (W) 1600 1400 1200 1000 800 600 400 200 0 0 100 200 1600 1400 1200 1000 800 600 400 200 0 0 04 0. W K/ R th 0. 06 SA 0.0 K/ = W 12 0. 8K W K/ /W R -Δ 3 x VSK.196.. Series Three phase bridge Connected TJ = 150 °C 300 400 500 600 2K /W 6K /W 0.25 K/W 0.4 K /W 0.1 0.1 25 50 75 100 125 150 Total Output Current (A) Fig. 18 - On-State Power Loss Characteristics Maximum Allowable Ambient Temperature (°C) 160 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 140 130 120 110 100 90 80 VSK.236.. Series RthJC (DC) = 0.14 K/W 350 300 250 200 150 100 50 0 180° 120° 90° 60° 30° Ø RMS limit Conduction angle Ø 30° 60° 90° 120° 0 50 100 150 200 180° 250 Conduction angle VSK.236.. Series TJ = 150 °C 0 50 100 150 200 250 Average Forward Current (A) Fig. 19 - Current Ratings Characteristics Average Forward Current (A) Fig. 21 - On-State Power Loss Characteristics 150 450 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 140 130 VSK.236.. Series RthJC (DC) = 0.14 K/W 400 350 300 250 200 150 100 50 0 Ø 120 110 100 90 80 70 Conduction period DC 180° 120° 90° 60° 30° RMS limit 30° 60° 90° 120° 180° 0 50 100 150 200 250 DC 300 350 400 Ø Conduction period VSK.236.. Series Per junction TJ = 150 °C 0 50 100 150 200 250 300 350 400 Average Forward Current (A) Fig. 20 - Current Ratings Characteristics Average Forward Current (A) Fig. 22 - On-State Power Loss Characteristics Document Number: 94357 Revision: 20-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules) 5000 4500 5500 5000 Peak Half Sine Wave Forward Curren (A) 4000 3500 3000 2500 2000 1500 Peak Half Sine Wave Forward Current (A) At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 4500 4000 3500 3000 2500 2000 1500 1000 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied VSK.236.. Series VSK.236.. Series 0.01 0.1 1.0 1 10 100 Number of Equal Amplitude Half Cycle Current Pulse (A) Fig. 23 - Maximum Non-Repetitive Surge Current Pulse Train Duration (s) Fig. 24 - Maximum Non-Repetitive Surge Current 450 400 450 400 Maximum Total Forward Power Loss (W) Maximum Total Forward Power Loss (W) DC 350 300 250 200 150 100 50 0 0. 25 0. 16 R th SA 350 300 250 200 150 100 50 0 K/ 0.3 0.5 W K/ W = 0.1 5K K/ /W W R -Δ K/W 0.7 K/W VSK.236.. Series Per junction TJ = 150 °C 0 50 100 150 200 250 300 350 0 25 50 75 100 125 150 Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 25 - On-State Power Loss Characteristics 1600 1600 Maximum Total Power Loss (W) Maximum Total Power Loss (W) R 0. 04 1400 + 1200 1000 800 600 400 200 0 ~ - 180° (Sine) 180° (Rect) 1400 1200 1000 800 600 400 200 0 th SA 2 x VSK.236.. Series Single phase bridge Connected TJ = 150 °C 0 100 200 300 400 500 0.0 6K 0.0 /W 8K /W 0.1 2K /W 0.1 6K /W 0.25 K /W 0.4 K/W K/ W = 0. 02 K/ W -Δ R 0 25 50 75 100 125 150 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 26 - On-State Power Loss Characteristics www.vishay.com 8 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94357 Revision: 20-May-10 VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series Standard Recovery Diodes, 165 A to 230 A Vishay Semiconductors (INT-A-PAK Power Modules) 2500 2500 + Maximum Total Power Loss (W) Maximum Total Power Loss (W) 2000 ~ 120° (Rect) R 2000 0.0 0.0 0.1 th SA 4K = /W 0. 02 1500 1500 6K K/ W /W -Δ R 1000 1000 K/W 500 3 x VSK.236.. Series Three phase bridge Connected TJ = 150 °C 0 100 200 300 400 500 600 700 500 0.16 K/W 0.3 K/W 0.7 K/W 0 0 0 25 50 75 100 125 150 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 27 - On-State Power Loss Characteristics Instantaneous On-State Current (A) Instantaneous On-State Current (A) 10 000 10 000 TJ = 25 °C 1000 TJ = 25 °C 1000 TJ = 150 °C 100 TJ = 150 °C 100 10 VSK.166.. Series Per junction 10 VSK.236.. Series Per junction 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 0 1.0 2.0 3.0 4.0 5.0 Instantaneous On-State Voltage (V) Fig. 28 - On-State Voltage Drop Characteristics Instantaneous On-State Voltage (V) Fig. 30 - On-State Voltage Drop Characteristics ZthJC - Transient Thermal Impedance Instantaneous On-State Current (A) 10 000 1 TJ = 25 °C 1000 Steady state value (DC operation) TJ = 150 °C 100 0.1 10 VSK.196.. Series Per junction 1 VSK.166.. Series 0.01 0.01 0 1.0 2.0 3.0 4.0 5.0 0.1 1 10 Instantaneous On-State Voltage (V) Fig. 29 - On-State Voltage Drop Characteristics Square Wave Pulse Duration (s) Fig. 31 - Thermal Impedance ZthJC Characteristics Document Number: 94357 Revision: 20-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 9 VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules) Instantaneous On-State Current (A) Instantaneous On-State Current (A) 1 1 Steady state value (DC operation) Steady state value (DC operation) 0.1 0.1 VSK.196.. Series 0.01 0.01 VSK.236.. Series 0.01 0.01 0.1 1.0 10 0.1 1.0 10 Square Wave Pulse Duration (s) Fig. 32 - Thermal Impedance ZthJC Characteristics Square Wave Pulse Duration (s) Fig. 33 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VSK 1 D 2 236 3 / 16 4 PbF 5 1 2 3 4 5 - Module type Circuit configuration (see Circuit Configuration table) Current rating: IF(AV) Voltage code x 100 = VRRM PbF = Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 www.vishay.com 10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94357 Revision: 20-May-10 VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series Standard Recovery Diodes, 165 A to 230 A Vishay Semiconductors (INT-A-PAK Power Modules) CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING VSKD... ~ + - Two diodes doubler circuit D + ~ - VSKC... + - Two diodes common cathodes C + - VSKJ... + + Two diodes common anodes J + + VSKE... + Single diode E + - LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95254 Document Number: 94357 Revision: 20-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 11 Outline Dimensions Vishay Semiconductors INT-A-PAK DBC DIMENSIONS in millimeters (inches) 30 (1.18) Ø 6.5 (Ø 0.25) 80 (3.15) 17 (0.67) 23 (0.91) 23 (0.91) 35 (1.38) (0.57) 14.5 66 (2.60) 3 screws M6 x 10 94 (3.70) 5 4 1 2 3 7 6 28 (1.10) 9 (0.33) 37 (1.44) Document Number: 95254 Revision: 11-Dec-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1