VSKD250-04

VSK.250, VSK.270, VSK.320 Series Vishay Semiconductors Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules) FEATURES • High voltage • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL approved file E78996 MAGN-A-PAK • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION This new VSK series of MAGN-A-PAKs uses high voltage power diodes in two basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges and the single diode module can be used in conjunction with the thyristor modules as a freewheel diode. These modules are intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required (motor drives, etc.). PRODUCT SUMMARY IF(AV) Type 250 A to 320 A Modules - Diode, High Voltage MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) IF(RMS) IFSM I2t I2t VRRM TJ 50 Hz 60 Hz 50 Hz 60 Hz CHARACTERISTICS VSK.250.. 250 TC 100 393 7015 7345 246 225 2460 VSK.270.. 270 100 424 8920 9430 398 363 3980 400 to 3000 - 40 to 150 VSK.320.. 320 100 502 10 110 10 580 511 466 5110 kA2s kA2s V °C A UNITS A °C Document Number: 93581 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VSK.250, VSK.270, VSK.320 Series Vishay Semiconductors Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules) ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 VSK.250 VSK.270 VSK.320 08 12 16 20 VSK.270 30 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 800 1200 1600 2000 3000 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 900 1300 1700 2100 3100 50 IRRM MAXIMUM AT 150 °C mA FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current Maximum peak, one-cycle forward, non-repetitive surge current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180° conduction, half sine wave As AC switch t = 10 ms IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I 2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VSK.250 VSK.270 VSK.320 UNITS 250 100 393 7015 7345 5900 Sinusoidal half wave, initial TJ = TJ maximum 6180 246 225 174 159 2460 0.79 0.92 0.63 0.49 1.29 270 100 424 8920 9340 7500 7850 398 363 281 257 3980 0.74 0.87 0.94 0.81 1.48 320 100 502 10 110 10 580 8500 8900 511 466 361 330 5110 0.69 V 0.86 0.59 m 0.44 1.28 V kA2s kA2s A A °C t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum (I >  x IF(AV)), TJ = TJ maximum (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum (I >  x IF(AV)), TJ = TJ maximum IFM =  x IF(AV), TJ = TJ maximum, 180° conduction Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 Low level value of threshold voltage High level value of threshold voltage Low level forward slope resistance High level forward slope resistance Maximum forward voltage drop BLOCKING PARAMETER Maximum peak reverse leakage current RMS insulation voltage SYMBOL IRRM VINS TJ = 150 °C 50 Hz, circuit to base, all terminals shorted, t = 1 s TEST CONDITIONS VALUES 50 3000 UNITS mA V www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93581 Revision: 02-Jul-10 VSK.250, VSK.270, VSK.320 Series Standard Recovery Diodes, 250 A to 320 A Vishay Semiconductors (MAGN-A-PAK Power Modules) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case per junction Maximum resistance, case to heatsink per module Mounting torque ± 10 % MAP to heatsink busbar to MAP SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. 0.16 TEST CONDITIONS VALUES VSK.250 VSK.270 VSK.320 - 40 to 150 0.125 K/W 0.035 4 to 6 Nm 8 to 10 800 30 MAGN-A-PAK g oz. UNITS °C Approximate weight Case style R CONDUCTION PER JUNCTION DEVICE 180° VSK.250 VSK.270 VSK.320 0.009 0.008 0.008 SINUSOIDAL CONDUCTION AT TJ MAXIMUM 120° 0.010 0.012 0.010 90° 0.014 0.014 0.013 60° 0.020 0.020 0.020 30° 0.032 0.032 0.032 180° 0.007 0.007 0.007 RECTANGULAR CONDUCTION AT TJ MAXIMUM 120° 0.011 0.011 0.011 90° 0.015 0.015 0.015 60° 0.021 0.020 0.020 30° 0.033 0.033 0.033 K/W UNITS Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 93581 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VSK.250, VSK.270, VSK.320 Series Vishay Semiconductors Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules) Maximum Allowable Case T emperature (°C) Maximum Average Forward Power Loss (W) 150 140 130 120 110 100 90 80 0 50 100 150 200 250 300 Average F orward Current (A) 30° Conduction Angle 300 250 200 150 100 50 0 0 50 VSK.250.. S eries R thJC (DC) = 0.16 K/ W 180° 120° 90° 60° 30° RMSLimit Conduc tion Angle 60° 90° 120° 180° VSK.250.. S eries T J = 150°C 100 150 200 250 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - Forward Power Loss Characteristics Maximum Allowable Cas T e emperature (°C) 140 130 120 110 30° 100 90 80 0 50 VSK.250.. S eries R thJC (DC) = 0.16 K/ W Maximum Average F orward Power Los (W) s 150 450 400 350 300 250 200 R MSLimit 150 100 50 0 0 50 100 150 200 250 300 350 400 Average Forward Current (A) VSK.250.. S eries TJ= 150°C Conduction Period Conduction Period DC 180° 120° 90° 60° 30° 60° 90° 120° 180° DC 100 150 200 250 300 350 400 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 4 - Forward Power Loss Characteristics Maximum T ota l Forward Power Loss (W) 600 R th A S 500 400 300 200 100 0 0 50 VSK.250.. S eries Per Junc tion TJ = 150°C 180° (S ine) DC 0. 08 K/ 0. W 12 K/ W = 02 0. W K/ ta el -D 0.2 K/ W R 0.2 5 K/ W 0.4 K/ W 0.6 K / W 100 150 200 250 300 350 400 0 T otal R MSOutput Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient T emperature (°C) Fig. 5 - Forward Power Loss Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93581 Revision: 02-Jul-10 VSK.250, VSK.270, VSK.320 Series Standard Recovery Diodes, 250 A to 320 A Vishay Semiconductors (MAGN-A-PAK Power Modules) 1200 Ma ximum T otal Power Lo s (W) s 1000 800 180° (S ine) 180° (R t) ec 0. 1 0. 08 05 0. W K/ R t hS /W 3K 0.0 K/ W K/ W A K/ W .01 =0 600 400 200 0.1 6K /W e lt -D 0.2 5K /W aR 2 x VSK.250.. S eries S ingle Phase B ge rid Connec ted TJ = 150°C 0 100 200 300 400 0.35 K/ W 0 0 500 25 50 75 100 125 150 T otal Output Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 6 - Forward Power Loss Characteristics 1800 Maximum T otal Power Loss (W) 04 0. 2 0.0 R th 1600 1400 1200 1000 800 600 400 200 0 0 100 200 300 400 500 600 700 800 0 0. 06 0. 08 W K/ A S W K/ K/ W /W 5K .00 =0 120° (Rec t) K/ W 0.1 2K /W 0.1 6K /W 0.25 K/ W 0.35 K /W e lt -D aR 3 x VSK.250.. S eries T hree Phase Brid ge Connec ted TJ = 150°C 25 50 75 100 125 150 T otal Outp ut Current (A) Maximum Allowab le Ambient T emp era ture (°C) Fig. 7 - Forward Power Loss Characteristics Peak Half S Wave Forward Current (A) ine 6000 5500 5000 4500 4000 3500 3000 2500 2000 1500 1 At Any Ra ted Loa d Cond ition And With Rated VR RM Ap p lied Following Surge. Initia l T J = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Peak Half S ine Wave Forward Current (A) 6500 7000 6500 6000 5500 5000 4500 4000 3500 3000 2500 2000 1500 0.01 Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Initial T J = 150°C No Voltage Reapp lied R ted V RRM Rea pplied a VSK.250.. S eries Per Junc tion 10 100 VSK.250.. S eries Per Junc tion 0.1 Pulse T rain Duration (s) 1 Numb er Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 8 - Maximum Non-Repetitive Surge Current Fig. 9 - Maximum Non-Repetitive Surge Current Document Number: 93581 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VSK.250, VSK.270, VSK.320 Series Vishay Semiconductors Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules) 10000 Ins tantaneous F orward Current (A) TJ= 25°C TJ= 150°C 1000 Maximum Allowable Case T emperature (°C) 150 140 130 120 110 30° 100 90 80 0 100 200 300 400 500 Average F orward Current (A) 60° 90° 120° 180° VSK.270.. S eries R thJC (DC) = 0.125 K/ W Conduction Period 100 VSK.250.. S eries Per Junc tion 10 0.5 1 1.5 2 2.5 3 3.5 4 DC Instantaneous Forward Voltage (V) Fig. 10 - Forward Voltage Drop Characteristics Fig. 13 - Current Ratings Characteristics S teady S tate Value: R thJC = 0.16 K/ W (DC Operation) 0.1 Maximum Average Forward Power Loss (W) T ransient T hermal Impedanc e Z thJC (K/ W) 1 400 350 300 250 200 150 Conduc tion Angle 180° 120° 90° 60° 30° RMS Limit 0.01 100 50 0 0 50 100 150 200 250 300 Average Forward Current (A) VSK.270.. S eries TJ= 150°C VSK.250.. S eries Per Junction 0.001 0.001 0.01 0.1 1 10 100 S quare Wave Pulse Duration (s) Fig. 11 - Thermal Impedance ZthJC Characteristics Fig. 14 - Forward Power Loss Characteristics Maximum Allowable Cas T e emperature (°C) 140 130 120 110 100 90 80 0 50 100 VSK.270.. S eries R thJC (DC) = 0.125 K/ W Maximum Average Forward Power Loss (W) 150 500 DC 180° 400 120° 90° 350 60° 30° 300 450 250 200 150 100 50 0 0 50 100 150 200 250 300 350 400 450 Average Forward Current (A) Conduction Period RMS Limit Conduction Angle 30° 60° 90° 120° 180° 150 200 250 300 VSK.270.. S eries TJ= 150°C Average Forward Current (A) Fig. 12 - Current Ratings Characteristics Fig. 15 - Forward Power Loss Characteristics www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93581 Revision: 02-Jul-10 VSK.250, VSK.270, VSK.320 Series Standard Recovery Diodes, 250 A to 320 A Vishay Semiconductors (MAGN-A-PAK Power Modules) 700 Maximum T otal Forwa rd Power Loss (W) 600 500 400 300 200 100 0 0 50 VSK.270.. S eries Per Junc tion TJ = 150°C 180° (S ine) DC 0. 06 0. 1 R SA th K/ W = 02 0. K/ W W K/ 0.1 6K /W 0.2 5 K/ W 0.3 K/ W ta el -D R 0. 4 K/ W 0.6 K / W 0 100 150 200 250 300 350 400 T otal RMSOutput Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient T emperature (°C) Fig. 16 - Forward Power Loss Characteristics 1800 R Maximum T otal Power Loss (W) 1600 1400 1200 1000 800 0. 06 3 0. W K/ K/ W 04 0. A thS W K/ = W K/ 02 0. 180° (S ine) 180° (Rec t) 0.0 8K /W ta el -D 600 400 200 0 0.1 2K /W 0.1 6K /W 0.25 K/ W R 2 x VSK.270.. S eries S ingle Phase Bridge Connec ted TJ = 150°C 0 100 200 300 400 500 0.4 K/ W 0.6 K/ W 600 0 25 50 75 100 125 150 T otal Output Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 17 - Forward Power Loss Characteristics 2400 = A hS Rt Maximum T otal Power Loss (W) 2100 1800 1500 1200 900 600 300 0 0 200 400 600 800 0 3 x VSK.270.. S eries T hree Phase Bridge Connec ted T J= 150°C 120° (Rec t) 0. 04 K/ W 02 0. 0. 06 K/ W W K/ ta el -D R 0.1 K/ W K/ W 0.16 0.25 K/ W 0.4 K/ W 0.6 K/ W 25 50 75 100 125 150 T otal Output Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 18 - Forward Power Loss Characteristics Document Number: 93581 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 VSK.250, VSK.270, VSK.320 Series Vishay Semiconductors Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules) T ransient T hermal Impedance Z thJC (K/ W) Peak Half S Wave Forward Current (A) ine 8000 7000 6000 5000 4000 3000 2000 1 10 100 Numb er Of Equal Amplitude Half Cyc le Current Pulses (N) At Any Ra ted Load Cond ition And With Ra ted VRRM Ap plied Following Surge. Initial T J = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1 S teady S tate Value: R t hJC = 0.45 K/ W (DC Operation) 0.1 0.01 VSK.270.. S eries Per Junc tion VSK.270.. S eries Per Junction 0.001 0.001 0.01 0.1 1 10 100 S quare Wave Pulse Duration (s) Fig. 19 - Maximum Non-Repetitive Surge Current Fig. 22 - Thermal Impedance ZthJC Characteristics 8000 7000 6000 5000 4000 3000 2000 0.01 Ma ximum Non Rep etitive Surge Current Versus Pulse T rain Dura tion. Initia l TJ = 150°C No Voltage Reap plied Rated V RRM Rea p plied Maximum Allowable Case Temp erature (°C) Peak Half S Wave F ine orward Current (A) 9000 150 140 130 120 110 30° 100 90 80 0 50 100 150 200 250 300 350 Average F orward Current (A) 60° 90° 120° 180° Conduction Angle VSK.320.. S eries R thJC (DC) = 0.125 K/ W VSK.270.. S eries Per Junction 0.1 Pulse T rain Dura tion (s) 1 Fig. 20 - Maximum Non-Repetitive Surge Current Fig. 23 - Current Ratings Characteristics Maximum Allowa ble Cas T e emperature (°C) 10000 Instantaneous F orward Current (A) 150 140 130 120 110 100 90 80 0 100 200 300 400 500 600 Average Forward Current (A) 30° 60° 90° 120° 180° Conduc tion Period TJ= 25°C 1000 TJ= 150°C VSK.320.. S eries R thJC (DC) = 0.125 K/ W 100 VSK.270.. S eries Per Junc tion 10 0.5 DC 1 1.5 2 2.5 3 3.5 4 Instantaneous Forward Voltage (V) Fig. 21 - Forward Voltage Drop Characteristics Fig. 24 - Current Ratings Characteristics www.vishay.com 8 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93581 Revision: 02-Jul-10 VSK.250, VSK.270, VSK.320 Series Standard Recovery Diodes, 250 A to 320 A Vishay Semiconductors (MAGN-A-PAK Power Modules) Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) 400 350 300 250 200 150 Conduction Angle 500 450 400 350 300 250 200 150 100 50 0 0 100 200 300 400 500 600 Average Forward Current (A) VSK.320.. S eries Per Junction TJ = 150°C RMS Limit Conduc tion Period 180° 120° 90° 60° 30° R Limit MS DC 180° 120° 90° 60° 30° 100 50 0 0 50 100 150 200 250 300 350 Average F orward Current (A) VSK.320.. S eries TJ = 150°C Fig. 25 - Forward Power Loss Characteristics Fig. 26 - Forward Power Loss Characteristics 700 Maximum T otal F orward Power Loss (W) 600 500 180° (S ine) 0. 06 0. 1 400 DC 0.1 6K /W 0.2 K/ W 300 200 100 0 0 100 200 300 400 VSK.320.. S eries Per Junc tion TJ = 150°C 0.3 K/ W 0.4 K/ W 0.6 K/ W 04 0. K/ W K/ W R SA th W K/ = 02 0. W K/ ta el -D R 500 0 25 50 75 100 125 150 T otal RMSOutput Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 27 - Forward Power Loss Characteristics 1400 /W 3K 0.0 W K/ 04 0. W K/ R th 06 0. Maximum T otal Power Loss (W) 1200 1000 800 600 400 200 0 0 100 200 300 400 500 600 0 180° (S ine) 180° (R t) ec 0. 08 SA /W K .02 =0 K/ W 0. 12 0.1 6 elt -D K/ W K/ W a R 0.25 K/ W 2 x VSK.320.. S eries S ingle Phase Bridge Connec ted T J = 150°C 0.5 K / W 0. 6 K/ W 25 50 75 100 125 150 T otal Output Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 28 - Forward Power Loss Characteristics Document Number: 93581 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 9 VSK.250, VSK.270, VSK.320 Series Vishay Semiconductors Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules) 2800 h Rt 03 0. Maximum T otal Power Loss (W) 2400 2000 A S W K/ = 1600 1200 800 120° (Rec t) K/ W 0. 05 K/ W 0.0 6K /W 0.0 8K /W 0.1 2 K/ W 0. 04 02 0. W K/ ta el -D R 400 0 0 200 400 3 x VSK.320.. Series T hree Phase Bridge Connected TJ = 150°C 600 800 0.2 K / W 0.3 K/ W 0.6 K/ W 1000 0 25 50 75 100 125 150 T otal Output Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 29 - Forward Power Loss Characteristics Peak Half S Wave F ine orward Current (A) 10000 9000 8000 7000 6000 5000 4000 3000 2000 1 Instantaneous Forward Current (A) At Any Ra ted Load Condition And With Rated V RM App lied Following S urge. R Initial TJ = 150°C @60 Hz 0.0083 s @50 Hz 0.0100 s 10000 TJ= 25°C TJ= 150°C 1000 VSK.320.. Series Per Junc tion 10 100 VSK.320.. S eries Per Junc tion 100 0.5 1 1.5 2 2.5 3 3.5 4 Numb er Of Equal Amplitude Half Cyc le Current Pulses (N) Instantaneous Forward Voltage (V) Fig. 30 - Maximum Non-Repetitive Surge Current Fig. 32 - Forward Voltage Drop Characteristics 9000 8000 7000 6000 5000 4000 3000 2000 0.01 Ma ximum Non Rep etitive Surge Current Versus Pulse T rain Dura tion. Initial TJ = 150°C No Vo ltage Reap plied Rated VRRM Reap plied hermal Impedanc e Z thJC (K/W) T rans ient T Peak Half S ine Wave Forward Current (A) 10000 1 S teady S tate Value: RthJC = 0.45 K/ W (DC Operation) 0.1 0.01 VSK.320.. S eries Per Junction 0.001 0.001 0.01 0.1 1 10 100 VSK.320.. S eries Per Junc tio n 0.1 Pulse T rain Dura tion (s) 1 S quare Wave Pulse Duration (s ) Fig. 31 - Maximum Non-Repetitive Surge Current Fig. 33 - Thermal Impedance ZthJC Characteristics www.vishay.com 10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93581 Revision: 02-Jul-10 VSK.250, VSK.270, VSK.320 Series Standard Recovery Diodes, 250 A to 320 A Vishay Semiconductors (MAGN-A-PAK Power Modules) ORDERING INFORMATION TABLE Device code VSK 1 1 2 3 4 - D 2 320 3 - 24 4 Module type Circuit configuration (see Circuit Configuration table) Current rating: IF(AV) rounded Voltage code x 100 = VRRM (see Voltage Ratings table) CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING VSKD... ~ + - Two diodes doubler circuit D ~ + - VSKC... + - Two diodes common cathodes C + - VSKJ... + + Two diodes common anodes J + + VSKE... + - Single diode E + - LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93581 Revision: 02-Jul-10 www.vishay.com/doc?95086 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 11 Outline Dimensions Vishay Semiconductors MAGN-A-PAK DIMENSIONS in millimeters (inches) Ø 5.5 6 (0.24) 80 (3.15) 9 (0.35) 115 (4.53) 6 (0.24) 51 (2.01) 92 (3.62) 52 (2.04) 50 (1.97) 38 (1.5) 32 (1.26) 20 (0.79) HEX 13 3 screws M8 x 1.25 35 (1.38) 28 (1.12) Notes • Dimensions are nominal • Full engineering drawings are available on request • UL identification number for gate and cathode wire: UL 1385 • UL identification number for package: UL 94 V-0 10 (0.39) Document Number: 95086 Revision: 03-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1