VSKD56-14P

VSK.56..PbF, VSK.71..PbF Series Vishay Semiconductors Standard Diodes, 60 A/80 A (ADD-A-PAK Generation 5 Power Modules) FEATURES • High voltage • Industrial standard package • Thick copper baseplate • UL E78996 approved • 3500 VRMS isolating voltage • Compliant to RoHS directive 2002/95/EC ADD-A-PAK • Designed and qualified for industrial level PRODUCT SUMMARY IF(AV) Type 60 A/80 A Modules - Diode, High Voltage BENEFITS • Up to 1600 V • Full compatible TO-240AA • High surge capability • Easy mounting on heatsink • Al2O3 DBC insulator • Heatsink grounded MECHANICAL DESCRIPTION The Generation 5 of ADD-A-PAK module combine the excellent thermal performance obtained by the usage of direct bonded copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation 5 of AAP module is manufactured without hard mold, eliminating any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other Vishay HPP modules. ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) IF(RMS) IFSM I2t I2t VRRM TJ TStg Range 50 Hz 60 Hz 50 Hz 60 Hz CHARACTERISTICS 100 °C VSK.56 60 94 1600 1680 12.89 11.76 128.9 400 to 1600 - 40 to 150 VSK.71 80 126 1790 1870 15.90 14.53 159 kA2s kA2s V °C A UNITS Document Number: 94358 Revision: 20-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VSK.56..PbF, VSK.71..PbF Series Vishay Semiconductors Standard Diodes, 60 A/80 A (ADD-A-PAK Generation 5 Power Modules) ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 06 08 VSK.56 VSK.71 10 12 14 16 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 600 800 1000 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 700 900 1100 1300 1500 1700 10 IRRM MAXIMUM AT 150 °C mA FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at 92 °C case temperature t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I 2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop I2t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VSK.56 60 100 94 1600 1680 1350 Sinusoidal half wave, intitial TJ = TJ maximum 1420 12.89 11.76 9.12 8.32 128.9 0.96 1.03 2.81 2.48 1.51 VSK.71 80 100 126 1790 1870 1500 1570 15.90 14.53 11.25 10.23 159.0 0.83 0.92 2.68 m (I >  x IF(AV)), TJ = TJ maximum IFM =  x IF(AV), TJ = 25 °C, tp = 400 μs square wave 2.40 1.50 V kA2s V kA2s A UNITS A °C t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum (I >  x IF(AV)), TJ = TJ maximum (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum BLOCKING PARAMETER Maximum peak reverse leakage current RMS insulation voltage SYMBOL IRRM VINS TJ = 150 °C 50 Hz, circuit to base, all terminals shorted TEST CONDITIONS VSK.56 10 3500 (1 s) VSK.71 UNITS mA V www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94358 Revision: 20-May-10 VSK.56..PbF, VSK.71..PbF Series Standard Diodes, 60 A/80 A Vishay Semiconductors (ADD-A-PAK Generation 5 Power Modules) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction and storage temperature range Maximum thermal resistance, junction to case per junction Typical thermal resistance, case to heatsink to heatsink Mounting torque ± 10 % busbar Approximate weight Case style JEDEC SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. TEST CONDITIONS VALUES VSK.56 VSK.71 UNITS °C - 40 to 150 0.5 0.1 5 0.4 K/W Nm 4 110 4 g oz. ADD-A-PAK (TO-240AA) R CONDUCTION PER JUNCTION DEVICES VSK.56 VSK.71 SINE HALF WAVE CONDUCTION 180° 0.11 0.06 120° 0.13 0.08 90° 0.16 0.11 60° 0.22 0.14 30° 0.32 0.21 180° 0.09 0.06 RECTANGULAR WAVE CONDUCTION 120° 0.14 0.09 90° 0.17 0.11 60° 0.23 0.15 30° 0.32 0.21 UNITS °C/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94358 Revision: 20-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VSK.56..PbF, VSK.71..PbF Series Vishay Semiconductors Standard Diodes, 60 A/80 A (ADD-A-PAK Generation 5 Power Modules) 120 150 Maximum Average Forward Power Loss (W) Maximum Allowable Case Tmperature (°C) 140 130 VSK.56.. Series RthJC (DC) = 0.5 K/W 100 80 60 Ø DC 180° 120° 90° 60° 30° RMS limit 120 110 100 Conduction angle Ø 40 20 0 Conduction period VSK.56.. Series Per junction TJ = 150 °C 0 20 40 60 80 100 30° 90 60° 40 90° 120° 180° 60 70 0 10 20 30 50 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Average Forward Current (A) Fig. 4 - Foward Power Loss Characteristics 150 1500 Maximum Allowable Case Temperature (°C) VSK.56.. Series RthJC (DC) = 0.5 K/W 1400 1300 140 Peak Half Sine Wave Forward Current (A) 1200 1100 1000 900 800 700 600 500 130 120 110 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Ø Conduction period 30° 100 90 60° 90° 120° 0 20 40 60 180° DC 80 100 VSK.56.. Series Per junction 1 10 100 400 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 90 Maximum Average Forward Power Loss (W) 80 70 60 50 40 30 20 10 0 RMS limit Peak Half Sine Wave Forward Current (A) 180° 120° 90° 60° 30° 1600 1400 1200 1000 800 600 400 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Ø Conduction angle VSK.56.. Series Per junction TJ = 150 °C 0 10 20 30 40 50 60 70 VSK.56.. Series Per junction 0.1 1.0 10 200 0.01 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94358 Revision: 20-May-10 VSK.56..PbF, VSK.71..PbF Series Standard Diodes, 60 A/80 A Vishay Semiconductors (ADD-A-PAK Generation 5 Power Modules) 120 120 100 80 0.7 R K/ W th Maximum Total Forward Power Loss (W) Maximum Total Forward Power Loss (W) 100 80 60 40 20 0 SA = 1.0 0. 5 K/W K/ W 180° (Sine) DC 1.5 60 40 20 0 -Δ R K/W K/W 2.0 3.0 K /W VSK.56.. Series Per junction TJ = 150 °C 0 20 40 60 80 100 7.0 K/W 0 20 40 60 80 100 120 140 Total RMS Output Current (A) Fig. 7 - Forward Power Loss Characteristics Maximum Allowable Ambient Temperature (°C) 450 450 Maximum Total Power Loss (W) Maximum Total Power Loss (W) R 0.2 0.3 400 400 350 300 250 200 150 100 50 0 th SA + 350 300 250 200 150 100 50 0 ~ - 180° (Sine) 180° (Rect) = K/ W 0. 1 K/ W K/W -Δ R 0.5 K/W /W 2 x VSK.56.. Series Single phase bridge Connected TJ = 150 °C 0 20 40 60 80 100 120 140 1.0 K 0 20 40 60 80 100 120 140 Total Output Current (A) Fig. 8 - Forward Power Loss Characteristics Maximum Allowable Ambient Temperature (°C) 450 450 Maximum Total Power Loss (W) Maximum Total Power Loss (W) 400 + ~ 120° (Rect) 400 350 300 250 200 150 100 50 0 R th 350 300 250 200 150 100 50 0 0.3 SA = K/ 0. W 1 K/ 0.4 0.5 W K/ W -Δ R K/W 3 x VSK.56.. Series Three phase bridge Connected TJ = 150 °C 0 20 40 60 80 100 120 140 160 K/W 1.0 K /W 1.5 K/W 3.0 K/W 0.7 0 20 40 60 80 100 120 140 Total Output Current (A) Fig. 9 - Forward Power Loss Characteristics Maximum Allowable Ambient Temperature (°C) Document Number: 94358 Revision: 20-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VSK.56..PbF, VSK.71..PbF Series Vishay Semiconductors Standard Diodes, 60 A/80 A (ADD-A-PAK Generation 5 Power Modules) 160 150 140 130 120 110 100 90 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) VSK.71.. Series RthJC (DC) = 0.4 K/W 140 120 100 80 60 40 20 0 Ø Conduction angle DC 180° 120° 90° 60° 30° RMS limit Ø Conduction period VSK.71.. Series Per junction TJ = 150 °C 0 20 40 60 80 100 120 140 30° 60° 90° 120° 180° 60 70 80 90 0 10 20 30 40 50 Average Forward Current (A) Fig. 10 - Current Ratings Characteristics Average Forward Current (A) Fig. 13 - Forward Power Loss Characteristics 150 1600 Maximum Allowable Case Temperature (°C) 140 130 120 110 100 VSK.71.. Series RthJC (DC) = 0.4 K/W 1400 Peak Half Sine Wave Forward Current (A) Ø 1200 1000 800 600 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Conduction period 90° 60° 30° 0 20 40 60 120° 180° 100 DC 120 140 VSK.71.. Series Per junction 400 90 80 1 10 100 Average Forward Current (A) Fig. 11 - Current Ratings Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current 120 Maximum Average Forward Power Loss (W) 100 80 60 40 20 0 Peak Half Sine Wave Forward Current (A) 180° 120° 90° 60° 30° RMS limit 1800 1600 1400 1200 1000 800 600 400 0.01 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150°C No voltage reapplied Rated VRRM reapplied Ø Conduction angle VSK.71.. Series Per junction TJ = 150 °C 0 10 20 30 40 50 60 70 80 VSK.71.. Series Per junction 0.1 1.0 Average Forward Current (A) Fig. 12 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 15 - Maximum Non-Repetitive Surge Current www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94358 Revision: 20-May-10 VSK.56..PbF, VSK.71..PbF Series Standard Diodes, 60 A/80 A Vishay Semiconductors (ADD-A-PAK Generation 5 Power Modules) 160 140 160 140 R Maximum Total Forward Power Loss (W) Maximum Total Forward Power Loss (W) th SA = 120 100 80 60 40 20 0 120 100 80 60 40 20 0 0.7 0. 180° (Sine) K/W K/W 4 K/ W DC 1.0 -Δ R VSK.71.. Series Per junction TJ = 150 °C 0 20 40 60 80 100 120 140 1.5 K/W 2.0 K/W 3.0 K /W 5.0 K/W 0 20 40 60 80 100 120 140 Total RMS Output Current (A) Fig. 16 - Forwad Power Loss Characteristics Maximum Allowable Ambient Temperature (°C) 600 600 Maximum Total Power Loss (W) Maximum Total Power Loss (W) 500 400 300 200 100 0 + ~ - 180° (Sine) 180° (Rect) R 500 th SA = 0.2 400 0.3 0. 1 K/W K/ W -Δ R 300 200 100 K/W 0.5 K/W 2 x VSK.71.. Series Single phase bridge Connected TJ = 150 °C 0 40 80 120 160 200 1.0 K/W 2.0 K/W 0 0 20 40 60 80 100 120 140 Total Output Current (A) Fig. 17 - Forward Power Loss Characteristics Maximum Allowable Ambient Temperature (°C) 600 Maximum Total Power Loss (W) Maximum Total Power Loss (W) + ~ 120° (Rect) 600 R th SA 500 400 300 200 100 0 500 400 300 200 100 0 0.2 0.3 0.4 = 0. K/ 1 W K/ W R -Δ K/W K/W /W 3 x VSK.71.. Series Three phase bridge Connected TJ = 150 °C 0 40 80 120 160 200 0.7 K 1.5 K/W 0 20 40 60 80 100 120 140 Total Output Current (A) Fig. 18 - Forward Power Loss Characteristics Maximum Allowable Ambient Temperature (°C) Document Number: 94358 Revision: 20-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 VSK.56..PbF, VSK.71..PbF Series Vishay Semiconductors Instantaneous Forward Current (A) 1000 Standard Diodes, 60 A/80 A (ADD-A-PAK Generation 5 Power Modules) Instantaneous Forward Current (A) 1000 100 TJ = 25 °C TJ = 150 °C 100 TJ = 25 °C TJ = 150 °C VSK.56.. Series Per junction 10 VSK.71.. Series Per junction 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Instantaneous Forward Voltage (V) Fig. 19 - Forward Voltage Drop Characteristics Instantaneous Forward Voltage (V) Fig. 20 - Forward Voltage Drop Characteristics 1 ZthJC - Transient Thermal Impedance (K/W) Steady state value: RthJC = 0.5 K/W RthJC = 0.4 K/W (DC operation) 0.1 VSK.56.. Series VSK.71.. Series Per junction 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 21 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VSK 1 1 2 3 4 5 - D 2 71 3 / 16 4 P 5 Module type Circuit configuration (see Circuit Configuration table) Current code Voltage code (see Voltage Ratings table) P = Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 www.vishay.com 8 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94358 Revision: 20-May-10 VSK.56..PbF, VSK.71..PbF Series Standard Diodes, 60 A/80 A Vishay Semiconductors (ADD-A-PAK Generation 5 Power Modules) CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING VSKD... ~ (1) + (2) 2 3 (3) Two diodes doubler circuit D 1 VSKC... + (1) (2) 2 3 (3) Two diodes common cathodes C 1 VSKJ... (1) + (2) 2 3 + (3) Two diodes common anodes J 1 VSKE... + (2) (3) Single diode E 2 3 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95015 Document Number: 94358 Revision: 20-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 9 Outline Dimensions Vishay Semiconductors ADD-A-PAK Diode DIMENSIONS in millimeters (inches) 30 ± 0.5 (1.18 ± 0.0197) 29 ± 0.5 (1 ± 0.0197) Viti M5 x 0.8 Screws M5 x 0.8 6.3 ± 0.3 (0.2 ± 0.018) 18 (0.7) REF. 21 ± 0.75 (0.8 ± 0.02953) 80 ± 0.3 (3.15 ± 0.0118) 2 3 6.2 ± 0.2 (0.2 ± 0.0079) 1 15 ± 0.5 (0.59 ± 0.0197) 20 ± 0.5 (0.79 ± 0.0197) 20 ± 0.5 (0.79 ± 0.0197) 92 ± 0.75 (3.6 ± 0.02953) 24 ± 0.5 (1 ± 0.0197) 35 REF. Document Number: 95015 Revision: 29-Sep-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1