VSKD600-12

VSKD600 Series Vishay Semiconductors Standard Diodes, 600 A (SUPER MAGN-A-PAK Power Modules) FEATURES • High current capability • High surge capability • High voltage ratings up to 2000 V • 3000 VRMS isolating voltage with non-toxic substrate • Industrial standard package • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC SUPER MAGN-A-PAK TYPICAL APPLICATIONS • Rectifying bridge for large motor drives 600 A PRODUCT SUMMARY IF(AV) Type Modules - Diode, High Voltage • Rectifying bridge for large UPS MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES 600 TC 100 942 IF(RMS) TC 50 Hz IFSM 60 Hz 50 Hz 60 Hz I2t VRRM TStg, TJ Range Range 100 19 000 A 20 100 1805 1683 18 050 800 to 2000 - 40 to 150 kA2s V °C kA2s UNITS A °C A °C I2t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 08 12 VSKD600.. 16 20 1600 2000 1700 2100 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 1300 50 IRRM MAXIMUM AT TJ MAXIMUM mA Document Number: 93583 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VSKD600 Series Vishay Semiconductors Standard Diodes, 600 A (SUPER MAGN-A-PAK Power Modules) FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180° conduction, half sine wave 180° conduction, half sine wave at TC = 100 °C t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop I2t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 600 100 942 19.0 20.1 16.2 Sinusoidal half wave, initial TJ = TJ maximum 17.2 1805 1683 1319 1230 18 050 0.70 0.77 0.28 0.25 1.45 kA2s V m V kA2s kA UNITS A °C A t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum (I >  x IF(AV)), TJ = TJ maximum (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum (I >  x IF(AV)), TJ = TJ maximum Ipk = 1800 A, TJ = 25 °C, tp = 10 ms sine pulse BLOCKING PARAMETER RMS insulation voltage Maximum peak reverse and off-state leakage current SYMBOL VINS IRRM t=1s TJ = TJ maximum, rated VRRM applied TEST CONDITIONS VALUES 3000 50 UNITS V mA THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink Mounting torque ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet SMAP to heatsink busbar to SMAP SYMBOL TJ, TStg RthJC RthC-hs A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. DC operation TEST CONDITIONS VALUES - 40 to 150 0.065 K/W 0.02 6 to 8 Nm 12 to 15 1500 g UNITS °C SUPER MAGN-A-PAK www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93583 Revision: 02-Jul-10 VSKD600 Series Standard Diodes, 600 A Vishay Semiconductors (SUPER MAGN-A-PAK Power Modules) RthJC CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.009 0.011 0.014 0.021 0.037 RECTANGULAR CONDUCTION 0.006 0.011 0.015 0.022 0.038 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C ) 150 140 130 120 110 100 30° 90 80 0 100 200 300 400 500 600 700 Average Forward Current (A) 60° Conduction Angle 700 600 500 400 300 200 100 0 0 100 200 300 400 500 600 Average Forward Current (A) Conduction Angle VSKD600.. Series R thJC (DC) = 0.065 K/W 180° 120° 90° 60° 30° RMS Limit 90° 120° 180° VSKD600.. Series Per Junction T = 150°C J Fig. 1 - Current Ratings Characteristics Fig. 3 - Forward Power Loss Characteristics Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C ) 150 140 130 120 110 100 30° 90 80 0 200 400 600 800 1000 Average Forward Current (A) 60° 90° 120° 180° DC Conduction Period 1000 900 800 700 600 500 400 300 200 100 0 0 200 400 600 800 1000 Average Forward Current (A) VSKD600.. Series Per Junction TJ = 150°C RMS Limit Conduction Period VSKD600.. Series R thJC (DC) = 0.065 K/W DC 180° 120° 90° 60° 30° Fig. 2 - Current Ratings Characteristics Fig. 4 - Forward Power Loss Characteristics Document Number: 93583 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VSKD600 Series Vishay Semiconductors Standard Diodes, 600 A (SUPER MAGN-A-PAK Power Modules) Peak Half Sine Wave Forward Current (A ) 20000 18000 16000 14000 12000 10000 8000 6000 4000 0.01 VSKD600.. Series Per Junction 0.1 Pulse Train Duration (s) 1 Peak Half Sine Wave Forward Current (A) 18000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. 16000 Initial T = 150°C J @ 60 Hz 0.0083 s 14000 @ 50 Hz 0.0100 s 12000 10000 8000 6000 4000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N ) Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration . Initial T = 150°C J No Voltage Reapplied Rated VRRM Reapplied VSKD600.. Series Per Junction Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Maximum Total Forward Power Loss (W) 1000 R th 0 0. DC 800 600 180° (Sine) K/ W 0. 12 K/ W 0.1 6K /W 0. 08 400 VSKD600.. Series Per Junction TJ = 150°C 0 200 400 600 800 0.2 5K /W 0.3 5K /W 0.5 K /W 0 0. 6 4 SA W K/ W K/ = 2 0.0 W K/ -D ta el R 200 0 1000 0 25 50 75 100 125 150 Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 7 - Forward Power Loss Characteristics 3000 R th 02 0. Maximum Total Power Loss (W) 2500 2000 1500 1000 500 0 0 200 400 180° (Sine) 180° (Rect) K /W 4K /W 0.0 5K /W 0. 0 0. 03 SA W K/ = /W 1K 0.0 -D ta el 0.0 8K /W 0.12 K/ W 2 x VSKD600.. Series 0.2 K /W R Single Phase Bridge Connected TJ = 150°C 800 1000 600 1200 0 25 50 75 100 125 150 Total Output Current (A) Maximum Allowable Ambient Temperature (°C ) Fig. 8 - Forward Power Loss Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93583 Revision: 02-Jul-10 VSKD600 Series Standard Diodes, 600 A Vishay Semiconductors (SUPER MAGN-A-PAK Power Modules) 4500 R th Maximum Total Power Loss (W) 4000 3500 3000 2500 2000 1500 1000 500 0 0 300 600 900 1200 1500 1800 0 3 x VSKD600.. Series Three Phase Bridge Connected T J = 150°C 120° (Rect) 0. 02 K/ W 0.0 3K /W 0.0 5 K/ W SA = 01 0. W K/ -D ta el R 0.08 K/ W 0.12 K /W 0.2 K/ W 25 50 75 100 125 150 Total Output Current (A) Maximum Allowable Ambient Temperature (°C ) Fig. 9 - Forward Power Loss Characteristics Transient Thermal Impedance Z thJC (K/W ) 0.1 VSKD600.. Series Per Junction 0.01 Steady State Value: R thJC = 0.065 K/W (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJC Characteristic Document Number: 93583 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VSKD600 Series Vishay Semiconductors Standard Diodes, 600 A (SUPER MAGN-A-PAK Power Modules) ORDERING INFORMATION TABLE Device code VSK 1 1 2 3 4 - D 2 600 3 - 20 4 Module type Circuit configuration D = 2 diodes in series (see Circuit Configuration table) Current rating Voltage code x 100 = VRRM (see Voltage Ratings table) CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE D 3 CIRCUIT DRAWING Two diodes doubler circuit - 2 + ~ 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95088 www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93583 Revision: 02-Jul-10 Outline Dimensions Vishay Semiconductors Super MAGN-A-PAK Diode DIMENSIONS in millimeters (inches) 31.0 (1.22) 50.0 (1.97) 44.0 (1.73) Fast-on tabs 2.8 x 0.8 (0.11 x 0.03) M10 60.0 (2.36) 48.0 (1.89) 28.0 (1.10) 52 (2.05) 1 3 26.0 (0.98) 112.0 (4.41) 124.0 (4.88) 1.0 (0.039) 149.0 (5.67) 2 26.0 (0.98) 36.4 (1.14) 4.5 (0.20) Document Number: 95088 Revision: 20-Mar-08 For technical questions, contact: indmodules@vishay.com 20.1 (0.78) www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1