VSKDS403-100

VSKDS403/100 Vishay High Power Products ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL pending • Compliant to RoHS directive 2002/95/EC ADD-A-PAK • Designed and qualified for industrial level BENEFITS PRODUCT SUMMARY IF(AV) 200 A • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate • High surge capability • Easy mounting on heatsink MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. ELECTRICAL DESCRIPTION The VSKDS403.. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 µs sine 100 Apk, TJ = 125 °C Range CHARACTERISTICS Rectangular waveform VALUES 200 100 25 500 0.66 - 55 to 175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VSKDS403/100 100 UNITS V Document Number: 94642 Revision: 05-Aug-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 VSKDS403/100 Vishay High Power Products ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 5.5 A, L = 1 mH Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical TEST CONDITIONS 50 % duty cycle at TC = 111 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied VALUES 200 25 500 3300 15 1 mJ A A UNITS ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 200 A Maximum forward voltage drop VFM 400 A 200 A 400 A Maximum reverse leakage current Maximum junction capacitance Typical series inductance Maximum voltage rate of change Maximum RMS insulation voltage IRM CT LS dV/dt VINS TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C VALUES 0.99 1.3 0.83 1.09 6 80 55 000 5.0 10 000 3000 (1 min) 3600 (1 s) mA pF nH V/µs V V UNITS TJ = 125 °C VR = Rated VR VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR 50 Hz THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case per leg Typical thermal resistance, case to heatsink per module Approximate weight to heatsink Mounting torque ± 10 % busbar Case style A mounting compound is recommended and the torque should be rechecked after a period of 3 h to allow for the spread of the compound. JEDEC SYMBOL TJ, TStg RthJC RthCS DC operation TEST CONDITIONS VALUES - 55 to 175 0.26 °C/W 0.1 75 2.7 4 Nm 3 TO-240AA compatible g oz. UNITS °C www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 94642 Revision: 05-Aug-09 VSKDS403/100 ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A 1000 Vishay High Power Products 10 00 10 0 T =1 5 C 7° J 1 0C 5° 1 5C 2° Reverse Current - IR (mA) 1 0 1 0C 0° 1 .1 .0 1 .0 1 0 0 7° 5C 5° 0C 2° 5C Instantaneous Forward Current - IF (A) 100 2 0 4 0 6 0 8 0 10 0 Reverse Voltage - VR (V) Tj = 175°C Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10000 Tj = 125°C Tj = 25°C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Forward Voltage Drop - VFM (V) Junction Capacitance - CT (pF) 10 Tj = 25°C 1000 0 10 20 30 40 50 60 70 80 90 100 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 Thermal Impedance ZthJC (°C/W) D = 0.75 0.1 D = 0.5 D = 0.33 D = 0.25 D = 0.2 0.01 Single Pulse (Thermal Resistance) 0.001 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94642 Revision: 05-Aug-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 VSKDS403/100 Vishay High Power Products 200 Allowable Case Temperature (°C) Average Power Loss - (Watts) Square wave (D=0.50) 80% rated Vr applied ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A 300 250 200 150 100 50 0 180° 120° 90° 60° 30° 150 DC RMS Limit DC 100 50 see note (1) 0 0 100 200 300 400 500 Average Forward Current - IF(AV)(A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 100000 0 50 100 150 200 250 300 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics Non-Repetitive Surge Current - IFSM(A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge 10000 1000 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch Freewheel diode 40HFL40S02 + Vd = 25 V D.U.T. IRFP460 Rg = 25 Ω Current monitor Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) www.vishay.com 4 For technical questions, contact: indmodules@vishay.com Document Number: 94642 Revision: 05-Aug-09 VSKDS403/100 ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A ORDERING INFORMATION TABLE Vishay High Power Products Device code VS 1 KD 2 S 3 40 4 3 5 / 100 6 1 2 3 4 5 6 - Vishay HPP Circuit configuration: KD = ADD-A-PAK - 2 diodes in series S = Schottky diode Average rating (x 10) Product silicon identification Voltage rating (100 = 100 V) CIRCUIT CONFIGURATION (1) ~ (2) + (3) - LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95369 Document Number: 94642 Revision: 05-Aug-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 Outline Dimensions Vishay Semiconductors ADD-A-PAK Generation VII - Diode DIMENSIONS in millimeters (inches) Viti M5 x 0.8 Screws M5 x 0.8 18 (0.7) REF. 6.7 ± 0.3 (0.26 ± 0.012) 30 ± 0.5 (1.18 ± 0.020) 35 REF. 29 ± 0.5 (1 ± 0.020) 80 ± 0.3 (3.15 ± 0.012) 22.6 ± 0.2 (0.89 ± 0.008) 2 3 76 6.3 ± 0.2 (0.248 ± 0.008) 15 ± 0.5 (0.59 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 92 ± 0.75 (3.6 ± 0.030) 1 45 24 ± 0.5 (1 ± 0.020) Document Number: 95369 Revision: 11-Nov-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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