VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A
FEATURES
• High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level
ADD-A-PAK
BENEFITS
• Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate
95 A
PRODUCT SUMMARY
IT(AV) or IF(AV)
• Up to 1600 V • High surge capability
MECHANICAL DESCRIPTION
The ADD-A-PAK Generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces.
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL IT(AV) or IF(AV) IO(RMS) ITSM, IFSM I2t I2√t VRRM TStg TJ Range CHARACTERISTICS 85 °C As AC switch 50 Hz 60 Hz 50 Hz 60 Hz VALUES 95 210 2000 2094 20 18.26 200 400 to 1600 - 40 to 125 kA2s kA2√s V °C A UNITS
Document Number: 94632 Revision: 17-May-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 06 08 VSK.91 10 12 14 16 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 600 800 1000 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 700 900 1100 1300 1500 1700 VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 400 600 800 1000 1200 1400 1600 15 IRRM, IDRM AT 125 °C mA
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A
ON-STATE CONDUCTION
PARAMETER Maximum average on-state current (thyristors) Maximum average forward current (diodes) Maximum continuous RMS on-state current, as AC switch SYMBOL IT(AV) IF(AV) IO(RMS) t = 10 ms Maximum peak, one-cycle non-repetitive on-state or forward current ITSM or IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Maximum value or threshold voltage Maximum value of on-state slope resistance Maximum peak on-state or forward voltage Maximum non-repetitive rate of rise of turned on current Maximum holding current Maximum latching current Notes (1) I2t for time t = I2√t x √t x x (2) Average power = V 2 T(TO) x IT(AV) + rt x (IT(RMS)) (3) 16.7 % x π x I AV < I < π x IAV (4) I > π x I AV I2√t (1) VT(TO) (2) rt (2) VTM VFM dI/dt IH IL TEST CONDITIONS 180° conduction, half sine wave, TC = 85 °C
or
VALUES 95
UNITS
I(RMS)
I(RMS)
210 A 2000
No voltage reapplied 100 % VRRM reapplied No voltage reapplied
Sinusoidal half wave, initial TJ = TJ maximum
2094 1682 1760 20
Initial TJ = TJ maximum 100 % VRRM reapplied
18.26 14.14 12.91 200 0.97 1.1 2.76 2.38 1.73 150 250 400
kA2s
t = 0.1 ms to 10 ms, no voltage reapplied TJ = TJ maximum Low level (3) High level
(4)
kA2√s V mΩ V A/μs
TJ = TJ maximum TJ = TJ maximum TJ = 25 °C
Low level (3) High level
(4)
ITM = π x IT(AV) IFM = π x IF(AV)
TJ = 25 °C, from 0.67 VDRM, ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit TJ = 25 °C, anode supply = 6 V, resistive load
mA
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94632 Revision: 17-May-10
VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series
ADD-A-PAK Generation VII Power Modules Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 95 A
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM - VGM TJ = - 40 °C Maximum gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C Maximum gate current required to trigger IGT VGD IGD TJ = 25 °C TJ = 125 °C Maximum gate voltage that will not trigger Maximum gate current that will not trigger TJ = 125 °C, rated VDRM applied TJ = 125 °C, rated VDRM applied Anode supply = 6 V resistive load Anode supply = 6 V resistive load TEST CONDITIONS VALUES 12 3.0 3.0 10 4.0 2.5 1.7 270 150 80 0.25 6 V mA mA V UNITS W A
BLOCKING
PARAMETER Maximum peak reverse and off-state leakage current at VRRM, VDRM Maximum RMS insulation voltage Maximum critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt TEST CONDITIONS TJ = 125 °C, gate open circuit 50 Hz TJ = 125 °C, linear to 0.67 VDRM VALUES 15 3000 (1 min) 3600 (1 s) 1000 UNITS mA V V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Junction operating and storage temperature range Maximum internal thermal resistance, junction to case per leg Typical thermal resistance, case to heatsink per module to heatsink Mounting torque ± 10 % busbar Approximate weight Case style JEDEC SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. TEST CONDITIONS VALUES - 40 to 125 0.22 °C/W 0.1 4 Nm 3 75 2.7 g oz. UNITS °C
TO-240AA compatible
ΔR CONDUCTION PER JUNCTION
DEVICES VSK.91.. SINE HALF WAVE CONDUCTION 180° 0.04 120° 0.048 90° 0.063 60° 0.085 30° 0.125 180° 0.033 RECTANGULAR WAVE CONDUCTION 120° 0.052 90° 0.067 60° 0.088 30° 0.127 UNITS °C/W
Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94632 Revision: 17-May-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series
Vishay Semiconductors
130
RthJC (DC) = 0.22°C/W
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A
Maximum average on-state power loss (W)
Maximum allowable case temperature (°C)
220 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
Average on-state current (A)
Per leg, Tj = 125°C
120 110 100 90 80 70 0 20 40 60 80 100
Average on-state current (A)
180° 120° 90° 60° 30°
180° 120° 90° 60° 30°
DC
RMS limit
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
Maximum allowable case temperature (°C)
130 120 110 100 90 80 70 0 20 40 60 80 100 120 140 160
Average on-state current (A)
DC 180° 120° 90° 60° 30°
1800
Peak half sine wave on-state current (A)
RthJC (DC) = 0.22°C/W
1600
At any rated load condition and with rated Vrrm applied following surge Initial Tj = Tj max @ 60 Hz 0.0083 s @ 50 Hz 0.0100s
1400
1200
1000
Per leg
800 1 10 100
Number of equal amplitude half cycle current pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum average on-state power loss (W)
160
Peak half sine wave on-state current (A)
2000
180° 120° 90° 60° 30°
140 120 100 80 60 40 20 0 0
1800 1600 1400 1200 1000
RMS limit
Maximum Non-repetitive Surge Current Versus Pulse Train Duration. Control of conduction may not be maintained. Initial Tj = 125°C No Voltage Reapplied Rated Vrrm reapplied
Per leg, Tj = 125°C 20 40 60 80 100
Per leg
800 0.01
0.1
Pulse train duration (s)
1
Average on-state current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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Document Number: 94632 Revision: 17-May-10
VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series
ADD-A-PAK Generation VII Power Modules Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 95 A
400
Maximum total on-state power loss (W)
RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 1.5 °C/W 3 °C/W
350 300 250 200 150 100 50 0 0 40 80
180° 120° 90° 60° 30°
VSK.91 Series Per module Tj = 125°C
120
160
200
240 20 0
40
60
80
100 120 140
Total RMS output current (A)
Maximum allowable ambient temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
700
Maximum total power loss (W)
600 500 400 300 200 100 0 0 50
∼
180° (sine) 180° (rect)
RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 1 °C/W 2 °C/W
2 x VSK.91 Series single phase bridge connected Tj = 125°C
100
150
0 200
20
40
60
80
100 120 140
Total output current (A)
Maximum allowable ambient temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
900
Maximum total power loss (W)
800 700 600 500 400 300 200 100 0 0 40 80 120 160 200
0 240 20 40 60
3 x VSK.91 Series three phase bridge connected Tj = 125°C
RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 1 °C/W
120° (rect)
80
100 120 140
Total output current (A)
Maximum allowable ambient temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94632 Revision: 17-May-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A
1000
Instantaneous on-state current (A)
Per leg
100
10 Tj = 125°C Tj = 25°C 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Instantaneous on-state voltage (V)
Fig. 10 - On-State Voltage Drop Characteristics
Transient thermal impedance Z thJC ( °C/W)
1 Steady state value RthJC = 0.22 °C/W (DC operation) 0.1
0.01
Per leg
0.001 0.001
0.01
0.1
Square wave pulse duration (s)
1
10
Fig. 11 - Thermal Impedance ZthJC Characteristics
100
Instantaneous gate voltage (V)
Rec tangular ga te pulse a )R ecommend ed load line for ra ted di/ d t: 20 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b )R ecommend ed load line for = 6 µs
(1) PGM = 200 W, tp = 300 µs (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a)
T = -40 °C J
(b)
T = 25 °C J T = 125 °C J
1
(4)
(3) (2)
(1)
VGD
IGD
0.1 0.001
IR VSK..91.. S K.71../ eries F requenc y Limited by PG(AV) 0.1 1 10 100 1000
0.01
Instantaneous gate current (A)
Fig. 12 - Gate Characteristics
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Document Number: 94632 Revision: 17-May-10
VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series
ADD-A-PAK Generation VII Power Modules Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 95 A
ORDERING INFORMATION TABLE
Device code
VSK
1 1 2 3 4 -
T
2
91
3
/
16
4
Module type Circuit configuration (see end of datasheet) Current code (95 A) Voltage code (see Voltage Ratings table)
Note • To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
VSKT
(1)
VSKH ~
(1)
VSKL ~
(1)
VSKN ~
(1)
-
1
1
1
1
2
+
(2)
2
+
(2)
2
+
(2)
2
+
(2)
3
45 76 45
3
3
76 45
3
(3) G1 K1 K2 G2 (4) (5) (7) (6)
(3) G1 K1 (4) (5)
(3) K2 G2 (7) (6)
+
(3) G1 K1 (4) (5)
LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95368
Document Number: 94632 Revision: 17-May-10
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Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Thyristor
DIMENSIONS in millimeters (inches)
Fast-on tab 2.8 x 0.8 (0.110 x 0.03)
Viti M5 x 0.8 Screws M5 x 0.8 18 (0.7) REF.
6.7 ± 0.3 (0.26 ± 0.012)
15.5 ± 0.5 (0.6 ± 0.020)
80 ± 0.3 (3.15 ± 0.012) 22.6 ± 0.2 (0.89 ± 0.008)
2 3
76
45
15 ± 0.5 (0.59 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 92 ± 0.75 (3.6 ± 0.030)
5.8 ± 0.25 (0.228 ± 0.010)
6.3 ± 0.2 (0.248 ± 0.008)
4 ± 0.2 (0.157 ± 0.008)
1
30 ± 1 (1.18 ± 0.039)
30 ± 0.5 (1.18 ± 0.020)
35 REF.
29 ± 0.5 (1 ± 0.020)
24 ± 0.5 (1 ± 0.020)
Document Number: 95368 Revision: 11-Nov-08
For technical questions, contact: indmodules@vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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