VSKT10516S90P

VSK.105..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 105 A FEATURES • High voltage • Industrial standard package • Thick copper baseplate • UL E78996 approved • 3500 VRMS isolating voltage • Totally lead (Pb)-free ADD-A-PAKTM RoHS COMPLIANT • Designed and qualified for industrial level PRODUCT SUMMARY IT(AV) or IF(AV) 105 A BENEFITS • Up to 1600 V • Fully compatible TO-240AA • High surge capability • Easy mounting on heatsink • Al203 DBC insulator • Heatsink grounded MECHANICAL DESCRIPTION The Generation 5 of ADD-A-PAKTM modules combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid copper baseplate at the bottom side of the device. The Cu baseplate allows an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improved thermal spread. The Generation 5 of AAP modules is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other Vishay HPP modules. ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) or IF(AV) IO(RMS) ITSM, IFSM I2 t I2 √ t VRRM TStg TJ Range CHARACTERISTICS 85 °C As AC switch 50 Hz 60 Hz 50 Hz 60 Hz VALUES 105 235 1785 1870 15.91 14.52 159.1 400 to 1600 - 40 to 150 - 40 to 130 kA2s kA2√s V °C A UNITS Document Number: 94416 Revision: 04-Jul-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 VSK.105..PbF Series Vishay High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 06 08 IRK.105 10 12 14 16 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 600 800 1000 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 700 900 1100 1300 1500 1700 VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 400 600 800 1000 1200 1400 1600 20 IRRM, IDRM AT 130 °C mA Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 105 A ON-STATE CONDUCTION PARAMETER Maximum average on-state current (thyristors) Maximum average forward current (diodes) Maximum continuous RMS on-state current, as AC switch SYMBOL IT(AV) IF(AV) IO(RMS) t = 10 ms t = 8.3 ms Maximum peak, one-cycle non-repetitive on-state or forward current ITSM or IFSM t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2 t t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Maximum value or threshold voltage Maximum value of on-state slope resistance Maximum peak on-state or forward voltage Maximum non-repetitive rate of rise of turned on current Maximum holding current Maximum latching current Notes (1) I2t for time t = I2√t x √t x x (2) Average power = V 2 T(TO) x IT(AV) + rt x (IT(RMS)) I2√t (1) VT(TO) (2) rt (2) VTM VFM dI/dt IH IL TEST CONDITIONS 180° conduction, half sine wave, TC = 85 °C or VALUES 105 UNITS I(RMS) I(RMS) 235 A No voltage reapplied 100 % VRRM reapplied 1785 Sinusoidal half wave, initial TJ = TJ maximum 1870 1500 1570 2000 2100 15.91 Initial TJ = TJ maximum 14.52 11.25 10.27 20.00 18.30 159.1 0.80 0.85 2.37 2.25 1.64 150 250 400 TJ = 25 °C, no voltage reapplied No voltage reapplied 100 % VRRM reapplied kA2s TJ = 25 °C, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied TJ = TJ maximum Low level (3) High level (4) Low level (3) High level (4) ITM = π x IT(AV) IFM = π x IF(AV) TJ = TJ maximum TJ = TJ maximum TJ = 25 °C kA2√s V mΩ V A/µs TJ = 25 °C, from 0.67 VDRM, ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 µs, tp > 6 µs TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit TJ = 25 °C, anode supply = 6 V, resistive load (3) (4) mA 16.7 % x π x IAV < I < π x IAV I> π x IAV www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94416 Revision: 04-Jul-08 VSK.105..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Generation 5 Power Modules), 105 A (ADD-A-PAK TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM - VGM TJ = - 40 °C Maximum gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C Maximum gate current required to trigger IGT VGD IGD TJ = 25 °C TJ = 125 °C Maximum gate voltage that will not trigger Maximum gate current that will not trigger TJ = 125 °C, rated VDRM applied TJ = 125 °C, rated VDRM applied Anode supply = 6 V resistive load Anode supply = 6 V resistive load TEST CONDITIONS VALUES 12 3 3 10 4.0 2.5 1.7 270 150 80 0.25 6 V mA mA V UNITS W A BLOCKING PARAMETER Maximum peak reverse and off-state leakage current at VRRM, VDRM RMS insulation voltage Maximum critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt (1) TEST CONDITIONS TJ = 130 °C, gate open circuit 50 Hz, circuit to base, all terminals shorted TJ = 130 °C, linear to 0.67 VDRM, gate open circuit VALUES 20 2500 (1 min) 3500 (1 s) 500 UNITS mA V V/µs Note (1) Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT105/16AS90 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction operating temperature range Storage temperature range Maximum internal thermal resistance, junction to case per module Typical thermal resistance, case to heatsink to heatsink Mounting torque ± 10 % busbar Approximate weight Case style JEDEC SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. TEST CONDITIONS VALUES - 40 to 130 - 40 to 150 0.135 K/W 0.1 5 Nm 3 110 4 TO-240AA g oz. UNITS °C ΔR CONDUCTION PER JUNCTION DEVICES VSK.105 SINE HALF WAVE CONDUCTION 180° 0.04 120° 0.05 90° 0.05 60° 0.08 30° 0.12 180° 0.03 RECTANGULAR WAVE CONDUCTION 120° 0.05 90° 0.06 60° 0.08 30° 0.12 UNITS °C/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94416 Revision: 04-Jul-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 VSK.105..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 105 A Maximum Average On-state Power Loss (W) 200 180 160 140 120 DC 180° 120° 90° 60° 30° Maximum Allowable Cas T e emperature (°C) 130 120 110 VSK.105.. S eries R thJC (DC) = 0.27 K/ W Conduction Angle 100 90 80 70 0 20 40 60 80 100 120 Average On-state Current (A) MS 100 R Limit 80 60 40 20 0 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) VSK.105.. S eries Per Junction T J = 130°C Conduction Period 30° 60° 90° 120° 180° Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics Maximum Allowable Case T emperature (°C) Peak Half S Wave On-state Current (A) ine 130 VSK.105.. S eries R (DC) = 0.27 K/ W 120 110 Conduction Period thJC 1600 1500 1400 1300 1200 1100 1000 900 800 700 1 At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial TJ= 130°C @60 Hz 0.0083 s @50 Hz 0.0100 s 100 90 80 70 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) 30° 60° 90° 120° 180° DC VSK.105.. S eries Per Junction 10 100 Number Of Equa l Amplitud e Half Cycle Current Pulses (N) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-state Power Loss (W) 140 120 100 80 60 180° 120° 90° 60° 30° R Limit MS Peak Half S Wave On-state Current (A) ine 160 1800 1600 1400 1200 1000 800 Maximum Non Repetitive S urge Current Versus Pulse T in Duration. Control ra Of Conduc tion May Not Be Maintained. Initial T = 130°C J No Volta ge Reapp lied Rated VRRMReapp lied Conduction Angle 40 20 0 0 20 40 60 80 100 120 Average On-state Current (A) VSK.105.. S eries Per Junction TJ = 130°C VSK.105.. S eries Per Junction 0.1 Pulse T rain Duration (s) 1 600 0.01 Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94416 Revision: 04-Jul-08 VSK.105..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Generation 5 Power Modules), 105 A (ADD-A-PAK 350 Maximum T l On-state Power Loss (W) ota R th = SA 300 250 200 150 Conduction Angle 180° 120° 90° 60° 30° 0. 3 0.5 K/ W 0. 7 100 50 0 K/ W 1K /W VSK.105.. S eries 2 K/W Per Mod ule TJ = 130°C 2 0. 1 0. K/ W W K/ W K/ ta el -D R 0 40 80 120 160 200 240 0 20 40 60 80 100 120 140 T otal RMS Output Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 7 - On-State Power Loss Characteristics 600 Rt Maximum T otal Power Loss (W) 500 400 300 200 100 0 0 40 80 180° (S ine) 180° (Rec t) 0. 2K /W 0. 3 K/ W A hS = 1 0. W K/ ta el -D R 0. 5 2 x VSK.105.. S eries S ingle Phase Bridge Connec ted TJ = 130°C 120 160 K/ W 0.7 K/ W 1KW / 2 K/ W 0 200 20 40 60 80 100 120 140 T otal Output Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 8 - On-State Power Loss Characteristics 900 Maximum T otal Power Loss (W) 800 R 700 600 500 400 300 200 100 0 0 40 80 120 160 200 240 280 0 3 x VSK.105.. S eries T hree Phase Bridge Connec ted TJ = 130°C 120° (R ect) th SA = 0. 1 K/ W 0.2 K/ W 0.3 K/ W 0.5 1 K/ -D el ta R K/ W W 20 40 60 80 100 120 140 T otal Output Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 9 - On-State Power Loss Characteristics Document Number: 94416 Revision: 04-Jul-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 VSK.105..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 105 A 1000 Instantaneous On-state Current (A) 100 TJ= 25°C 10 TJ= 130°C VSK.105.. S eries Per Junction 1 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 10 - On-State Voltage Drop Characteristics Ma ximum Reverse Recovery Charge - Qrr (µC) Maximum R everse Recovery Current - Irr (A) 700 600 500 50 A 140 120 100 80 60 40 20 10 VSK.105.. S eries T = 125 °C J I T = 200 A M 100 A 50 A 20 A 10 A VSK.105.. S eries TJ= 125 °C I T = 200 A M 100 A 400 300 200 100 10 20 A 10 A 20 30 40 50 60 70 80 90 100 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/ dt (A/ µs ) R ate Of Fall Of F orward Current - di/ dt (A/ µs) Fig. 11 - Recovery Charge Characteristics Fig. 12 - Recovery Current Characteristics T ransient T hermal Impedanc e Z thJC (K/W) 1 S teady S tate Value: R thJC = 0.27 K/ W (DC Operation) 0.1 VSK.105.. S eries Per Junc tion 0.01 0.001 0.01 0.1 S quare Wave Pulse Duration (s) 1 10 Fig. 13 - Thermal Impedance ZthJC Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94416 Revision: 04-Jul-08 VSK.105..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Generation 5 Power Modules), 105 A (ADD-A-PAK 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a)R ommended load line for ec rated di/ dt: 20 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)R ommended load line for ec = 6 µs 10 (1) PGM = 200 W, tp = 300 µs (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) T = -40 °C J (b ) T = 25 °C J T = 125 °C J 1 VGD IGD 0.1 0.001 0.01 (4) (3) (2) (1) VSK.105.. S eries 0.1 1 Frequenc y Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 14 - Gate Characteristics ORDERING INFORMATION TABLE Device code VSK 1 1 2 3 4 5 6 (1) T 2 - 105 3 / 16 4 S90 5 P 6 Module type Circuit configuration (see end of datasheet) Current code (1) Voltage code (see Voltage Ratings table) dV/dt code: S90 = dV/dt 1000 V/µs No letter = dV/dt 500 V/µs P = Lead (Pb)-free Available with no auxiliary cathode (for details see dimensions - link at the end of datasheet) To specify change: 105 to 106 e.g.: VSKT106/16P etc. Note • To order the optional hardware go to www.vishay.com/doc?95172 Document Number: 94416 Revision: 04-Jul-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 VSK.105..PbF Series Vishay High Power Products CIRCUIT CONFIGURATION VSKT (1) ~ VSKH (1) ~ VSKL (1) ~ VSKN (1) Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 105 A + (2) + (2) + (2) (2) (3) G1 K1 K2 G2 (4) (5) (7) (6) (3) G1 K1 (4) (5) (3) K2 G2 (7) (6) (3) G1 K1 (4) (5) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95085 www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 94416 Revision: 04-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1