VSKT152

VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A (New INT-A-PAK Power Module) FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips • Simple mounting • UL approved file E78996 New INT-A-PAK • Compliant to RoHS directive 2002/95/EC • Designed and qualified for multiple level PRODUCT SUMMARY IT(AV) 150 A APPLICATIONS • Battery charges • Welders • Power converters MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) IT(RMS) 50 Hz ITSM 60 Hz 50 Hz 60 Hz I2√t VRRM TStg TJ Range Range CHARACTERISTICS 85 °C VALUES 150 330 4000 4200 80 73 800 400 - 40 to 150 °C - 40 to 125 kA2√s V kA2s A UNITS A I2t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VSKT152/04PbF VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 VRSM/VDSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 IRRM/IDRM AT 125 °C mA 50 Document Number: 94514 Revision: 04-May-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 VSKT152/04PbF Vishay High Power Products ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction half sine wave 85 As AC switch t = 10 ms Maximum peak, one-cycle on-state, non-repetitive surge current t = 8.3 ms ITSM t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t VT(TO) rt VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied 330 4000 4200 3350 Sine half wave, initial TJ = TJ maximum 3500 80 73 56 51 800 0.82 TJ maximum Ipk = π x IT(AV), TJ = 25 °C TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit TJ = 25 °C, anode supply = 6 V, resistive load 1.44 1.48 200 mA 400 kA2√s V mΩ V kA2s A °C VALUES 150 UNITS A Thyristor/Thyristor, 150 A (New INT-A-PAK Power Module) t = 0.1 ms to 10 ms, no voltage reapplied Value of threshold voltage On-state slope resistance Maximum on-state voltage drop Maximum holding current Maximum latching current SWITCHING PARAMETER Typical delay time Typical rise time Typical turn-off time SYMBOL tgd tgr tq TJ = 25 °C TEST CONDITIONS Gate current = 1 A, dlg/dt = 1 A/μs Vd = 0.67 % VDRM VALUES 1 2 50 to 200 μs UNITS ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω BLOCKING PARAMETER Maximum peak reverse and off-state leakage current RMS insulation voltage Critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt TJ = 125 °C 50 Hz, circuit to base, all terminals shorted, t = 1 s TJ = TJ maximum, exponential to 67 % rated VDRM TEST CONDITIONS VALUES 50 3500 1000 UNITS mA V V/μs www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 94514 Revision: 04-May-10 VSKT152/04PbF Thyristor/Thyristor, 150 A Vishay High Power Products (New INT-A-PAK Power Module) TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger SYMBOL PGM PG(AV) IGM - VGT tp ≤ 5 ms, TJ = TJ maximum TJ = - 40 °C VGT TJ = 25 °C TJ = TJ maximum TJ = - 40 °C Maximum required DC gate current to trigger Maximum gate voltage that will not trigger Maximum gate current that will not trigger Maximum rate of rise of turned-on current IGT TJ = 25 °C TJ = TJ maximum VGD TJ = TJ maximum, rated VDRM applied IGD dI/dt TJ = TJ maximum, ITM = 400 A rated VDRM applied 10 300 mA A/μs Anode supply = 6 V, resistive load; Ra = 1 Ω TEST CONDITIONS tp ≤ 5 ms, TJ = TJ maximum f = 50 Hz, TJ = TJ maximum VALUES 12 3 3 10 4 2.5 1.7 270 150 80 0.3 V mA V UNITS W A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink per module Mounting torque ± 10 % Approximate weight Case style IAP to heatsink busbar to IAP SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface smooth, flat and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. TEST CONDITIONS VALUES - 40 to 125 °C - 40 to 150 0.18 K/W 0.05 4 to 6 200 7.1 New INT-A-PAK Nm g oz. UNITS ΔR CONDUCTION PER JUNCTION DEVICES 180° VSKT152/04PbF 0.007 SINUSOIDAL CONDUCTION AT TJ MAXIMUM 120° 0.010 90° 0.013 60° 0.016 30° 0.017 180° 0.009 RECTANGULAR CONDUCTION AT TJ MAXIMUM 120° 0.012 90° 0.014 60° 0.016 30° 0.017 K/W UNITS Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94514 Revision: 04-May-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A (New INT-A-PAK Power Module) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) 130 120 110 100 90 80 0 300 250 200 VSKT152 RthJC (DC) = 0.182 K/W DC 180˚ 120˚ 90˚ 60˚ 30˚ Conduction Angle 150 RMS Limit 100 50 0 0 50 100 150 200 250 Average On-state Current (A) Conduction Period 30˚ 60˚ 90˚ 120˚ 180˚ VSKT152 Tj = 125˚C 20 40 60 80 100 120 140 160 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Forward Power Loss Characteristics Maximum Allowable Case Temperature (°C) Peak Half Sine Wave On-state Current (A) 130 120 110 100 90 80 70 60 0 3600 3400 3200 3000 2800 2600 2400 2200 2000 1800 1600 1 VSKT152 RthJC (DC) = 0.182 K/W At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Conduction Period 30˚ 60˚ 90˚ 120˚ 180˚ DC VSKT152 Per Junction 50 100 150 200 250 10 100 Average On-state Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-state Power Loss (W) 220 200 180 160 140 120 100 80 60 40 20 0 0 Peak Half Sine Wave On-state Current (A) 180˚ 120˚ 90˚ 60˚ 30˚ RMS Limit 4500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 4000 Of Conduction May Not Be Maintained. Initial Tj = 125˚C No Voltage Reapplied 3500 Rated Vrrm Reapplied 3000 2500 2000 VSKT152 Per Junction Conduction Angle VSKT152 Tj = 125˚C 20 40 60 80 100 120 140 160 Average On-state Current (A) 1500 0.01 0.1 Pulse Train Duration (s) 1 Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: indmodules@vishay.com Document Number: 94514 Revision: 04-May-10 VSKT152/04PbF Thyristor/Thyristor, 150 A Vishay High Power Products (New INT-A-PAK Power Module) Maximum Total On-state Power Loss (W) 500 .01 =0 SA Rth /W 4K 0.0 400 Conduction Angle 300 200 100 0 0 50 VSKT152 Per Module Tj = 125˚C 180˚ 120˚ 90˚ 60˚ 30˚ 0. 12 K/ 0.1 6K W /W 0.2 5K /W 0.4 K/W 0.6 K/W 1 K/W 08 0. W K/ K/W R elta -D 0 100 150 200 250 300 350 25 50 75 100 125 Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-State Power Loss Characteristics 900 = SA Rth Maximum Total Power Loss (W) 800 700 600 500 400 300 200 100 0 0 50 100 150 200 250 0 300 2 x VSKT152 Single Phase Bridge Connected Tj = 125˚C /W 4K 0.0 180˚ (Sine) 180˚ (Rect) K/ W 0.1 2K /W 0.2 K/W 0.35 K/W 0.6 K/W 0. 08 /W 1K 0.0 R elta -D 25 50 75 100 125 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 8 - On-State Power Loss Characteristics 1400 A hS Rt Maximum Total Power Loss (W) 1200 1000 800 600 400 200 0 0 100 200 300 400 0 500 120˚ (Rect) = 04 0. W K/ ta el -D R 0.0 8K /W 0.1 K/W 0.1 6K /W 0.25 K/W 0.4 K /W 1 K/W 25 50 75 100 125 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-State Power Loss Characteristics Document Number: 94514 Revision: 04-May-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A (New INT-A-PAK Power Module) Transient Thermal Impedance Z thJC (K/W) 1000 Instantaneous On-state Current (A) 1 Steady State Value RthJC = 0.182 K/W (DC Operation) 100 0.1 10 Tj = 25˚C Tj = 125˚C VSKT152 Per Junction 0.01 VSKT152 1 0.5 1 1.5 2 2.5 0.001 0.001 0.01 0.1 1 Instantaneous On-state Voltage (V) Square Wave Pulse Duration (s) Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) 10 Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for = 6 µs (1) PGM = 200 W, tp = 300 µs (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) TJ = -40 ˚C (b) TJ = 25 ˚C TJ = 125 ˚C 1 VGD IGD (4) (3) (2) (1) VSKT152 Frequency Limited by PG(AV) 0.1 0.001 0.01 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig. 12 - Gate Characteristics www.vishay.com 6 For technical questions, contact: indmodules@vishay.com Document Number: 94514 Revision: 04-May-10 VSKT152/04PbF Thyristor/Thyristor, 150 A Vishay High Power Products (New INT-A-PAK Power Module) ORDERING INFORMATION TABLE Device code VSK 1 1 2 3 4 5 - T 2 152 3 / 04 4 PbF 5 Module type Circuit configuration: T = Two SCR doubler configuration Current rating Voltage rating (04 = 400 V) PbF = Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION 1 ~ 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95067 1 2 2 3 7 6 + 357 46 Document Number: 94514 Revision: 04-May-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 7 Outline Dimensions Vishay Semiconductors INT-A-PAK IGBT/Thyristor DIMENSIONS in millimeters (inches) 30 (1.18) 9 (0.33) 7 (0.28) Ø 6.5 (0.25 DIA) 80 (3.15) 17 (0.67) 23 (0.91) 23 (0.91) 7 6 5 (0.20) 14.5 (0.57) 35 (1.38) 1 2 3 5 4 3 screws M6 x 10 66 (2.60) 94 (3.70) 2.8 x 0.8 (0.11 x 0.03) 28 (1.10) 29 (1.15) 37 (1.44) Document Number: 95067 Revision: 15-Feb-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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