VSKT230-12PBF

VSK.230..PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A FEATURES • • • • • • • • • • High voltage Electrically isolated base plate 3500 VRMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL approved file E78996 Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level MAGN-A-PAK DESCRIPTION This new VSK series of MAGN-A-PAK modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc. PRODUCT SUMMARY IT(AV) 230 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) IT(RMS) ITSM I2t I2√t VDRM/VRRM TJ Range 50 Hz 60 Hz 50 Hz 60 Hz CHARACTERISTICS 85 °C VALUES 230 510 7500 7850 280 260 280 Up to 2000 - 40 to 130 kA2s kA2√s V °C A UNITS ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 08 12 VSK.23016 18 20 VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V 800 1200 1600 1800 2000 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 1300 1700 1900 2100 50 IRRM/IDRM AT 130 °C MAXIMUM mA Document Number: 93053 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VSK.230..PbF Series Vishay Semiconductors ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave As AC switch t = 10 ms Maximum peak, one-cycle on-state non-repetitive, surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value or threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Maximum holding current Maximum latching current I2√t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sinusoidal half wave, initial TJ = TJ maximum VALUES 230 85 510 7500 7850 6300 6600 280 256 198 181 2800 1.03 1.07 0.77 mΩ 0.73 1.59 500 1000 mA V kA2√s V kA2s A UNITS A °C SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum ITM = π x IT(AV), TJ = TJ maximum, 180° conduction, average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C Anode supply = 12 V, resistive load = 1 Ω, gate pulse: 10 V, 100 μs, TJ = 25 °C SWITCHING PARAMETER Typical delay time Typical rise time Typical turn-off time SYMBOL td tr tq TEST CONDITIONS TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs Vd = 0.67 % VDRM ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum; VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω VALUES 1.0 2.0 50 to 150 μs UNITS BLOCKING PARAMETER Maximum peak reverse and off-state leakage current RMS insulation voltage Critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt TEST CONDITIONS TJ = TJ maximum 50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s TJ = TJ maximum, exponential to 67 % rated VDRM VALUES 50 3000 1000 UNITS mA V V/μs www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93053 Revision: 02-Jul-10 VSK.230..PbF Series SCR/SCR and SCR/Diode Vishay Semiconductors (MAGN-A-PAK Power Modules), 230 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) + IGM - VGT VGT TEST CONDITIONS tp ≤ 5 ms, TJ = TJ maximum f = 50 Hz, TJ = TJ maximum tp ≤ 5 ms, TJ = TJ maximum tp ≤ 5 ms, TJ = TJ maximum TJ = - 40 °C Maximum required DC gate voltage to trigger TJ = 25 °C TJ = TJ maximum TJ = - 40 °C Maximum required DC gate current to trigger IGT VGD IGD dI/dt TJ = 25 °C TJ = TJ maximum Maximum gate voltage that will not trigger Maximum gate current that willnot trigger Maximum rate of rise of turned-on current TJ = TJ maximum, rated VDRM applied TJ = TJ maximum, rated VDRM applied TJ = TJ maximum, ITM = 400 A, rated VDRM applied Anode supply = 12 V, resistive load; Ra = 1 Ω Anode supply = 12 V, resistive load; Ra = 1 Ω VALUES 10.0 2.0 3.0 5.0 4.0 3.0 2.0 350 200 100 0.25 10.0 500 V mA A/μs mA V UNITS W A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction operating temperature range Storage temperature range Maximum thermal resistance, junction to case per junction Typical thermal resistance, case to heatsink per module MAP to heatsink Mounting torque ± 10 % busbar to MAP Approximate weight Case style SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of about 3 h to allow for the spread of the compound. TEST CONDITIONS VALUES - 40 to 130 - 40 to 150 0.125 K/W 0.02 UNITS °C 4 to 6 Nm 500 17.8 MAGN-A-PAK g oz. ΔR CONDUCTION PER JUNCTION DEVICES VSK.230SINUSOIDAL CONDUCTION AT TJ MAXIMUM 180° 0.009 120° 0.010 90° 0.010 60° 0.020 30° 0.032 RECTANGULAR CONDUCTION AT TJ MAXIMUM 180° 0.007 120° 0.011 90° 0.015 60° 0.020 30° 0.033 UNITS K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 93053 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VSK.230..PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93053 Revision: 02-Jul-10 VSK.230..PbF Series SCR/SCR and SCR/Diode Vishay Semiconductors (MAGN-A-PAK Power Modules), 230 A Fig. 7 - On-State Power Loss Characteristics Fig. 8 - On-State Power Loss Characteristics Fig. 9 - On-State Power Loss Characteristics Document Number: 93053 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VSK.230..PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A Typical Reverse Recovery Charge - Qrr (µC) 1800 1600 1400 1200 1000 800 600 400 200 0 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) 50 A VSK.230 .. Series TJ = 130 °C Per Junction ITM = 800 A 500 A 300 A 200 A 100 A Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Reverse Recovery Charge Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20 V, 10 ohms; tr < =1µs b) Recommended load line for