VSKT56-04

VSK.41.., VSK.56.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level ADD-A-PAK BENEFITS • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate 45 A/60 A PRODUCT SUMMARY IT(AV) or IF(AV) • Up to 1600 V • High surge capability MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. • Easy mounting on heatsink ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) or IF(AV) IO(RMS) ITSM, IFSM I2t I2√t VRRM TStg TJ Range CHARACTERISTICS 85 °C As AC switch 50 Hz 60 Hz 50 Hz 60 Hz VSK.41 45 100 850 890 3.61 3.30 36.1 400 to 1600 - 40 to 125 VSK.56 60 135 1200 1256 7.20 6.57 72 kA2s kA2√s V °C A UNITS Document Number: 94630 Revision: 17-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VSK.41.., VSK.56.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 06 VSK.41 VSK.56 08 10 12 14 16 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 600 800 1000 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 700 900 1100 1300 1500 1700 VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 400 600 800 1000 1200 1400 1600 15 IRRM, IDRM AT 125 °C mA ON-STATE CONDUCTION PARAMETER Maximum average on-state current (thyristors) Maximum average forward current (diodes) Maximum continuous RMS on-state current, as AC switch SYMBOL IT(AV) IF(AV) IO(RMS) t = 10 ms Maximum peak, one-cycle non-repetitive on-state or forward current ITSM or IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Maximum value or threshold voltage Maximum value of on-state slope resistance Maximum peak on-state or forward voltage Maximum non-repetitive rate of rise of turned on current Maximum holding current Maximum latching current Notes (1) I2t for time t = I2√t x √t x x (2) Average power = V 2 T(TO) x IT(AV) + rt x (IT(RMS)) (3) 16.7 % x π x I AV < I < π x IAV (4) I > π x I AV I2√t (1) VT(TO) (2) rt (2) VTM VFM dI/dt IH IL TEST CONDITIONS 180° conduction, half sine wave, TC = 85 °C or VSK.41 VSK.56 45 60 UNITS I(RMS) I(RMS) 100 850 890 715 750 3.61 135 A 1200 1256 1000 1056 7.20 6.57 5.10 4.56 72 0.91 1.02 4.27 3.77 1.7 150 200 kA2√s V mΩ V A/μs kA2s No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sinusoidal half wave, initial TJ = TJ maximum Initial TJ = TJ maximum 3.30 2.56 2.33 36.1 1.08 1.12 4.7 4.5 1.81 t = 0.1 ms to 10 ms, no voltage reapplied TJ = TJ maximum Low level (3) High level (4) Low level (3) High level (4) ITM = π x IT(AV) IFM = π x IF(AV) TJ = TJ maximum TJ = TJ maximum TJ = 25 °C TJ = 25 °C, from 0.67 VDRM, ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit TJ = 25 °C, anode supply = 6 V, resistive load 400 mA 400 www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94630 Revision: 17-May-10 VSK.41.., VSK.56.. Series ADD-A-PAK Generation VII Power Modules Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM - VGM TJ = - 40 °C Maximum gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C Maximum gate current required to trigger IGT VGD IGD TJ = 25 °C TJ = 125 °C Maximum gate voltage that will not trigger Maximum gate current that will not trigger TJ = 125 °C, rated VDRM applied TJ = 125 °C, rated VDRM applied Anode supply = 6 V resistive load Anode supply = 6 V resistive load TEST CONDITIONS VSK.41 VSK.56 UNITS W A 10 2.5 2.5 10 4.0 2.5 1.7 270 150 80 0.25 6 V mA mA V BLOCKING PARAMETER Maximum peak reverse and off-state leakage current at VRRM, VDRM Maximum RMS insulation voltage Maximum critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt TEST CONDITIONS TJ = 125 °C, gate open circuit 50 Hz TJ = 125 °C, linear to 0.67 VDRM VSK.41 VSK.56 UNITS mA V V/μs 15 3000 (1 min) 3600 (1 s) 1000 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction operating and storage temperature range Maximum internal thermal resistance, junction to case per leg Typical thermal resistance, case to heatsink per module to heatsink Mounting torque ± 10 % busbar Approximate weight Case style JEDEC SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. TEST CONDITIONS VSK.41 VSK.56 UNITS °C - 40 to 125 0.44 0.1 4 Nm 3 75 2.7 g oz. 0.35 °C/W TO-240AA compatible ΔR CONDUCTION PER JUNCTION DEVICES VSK.41.. VSK.56.. SINE HALF WAVE CONDUCTION 180° 0.110 0.088 120° 0.131 0.104 90° 0.17 0.134 60° 0.23 0.184 30° 0.342 0.273 180° 0.085 0.07 RECTANGULAR WAVE CONDUCTION 120° 0.138 0.111 90° 0.177 0.143 60° 0.235 0.189 30° 0.345 0.275 UNITS °C/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94630 Revision: 17-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VSK.41.., VSK.56.. Series Vishay Semiconductors Maximum allowable case temperature (°C) ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A Maximum average on-state power loss (W) 130 VSK.41 Series RthJC (DC) = 0.44°C/W 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 Average on-state current (A) 180° 120° 90° 60° 30° 120 DC 110 RMS limit 100 180° 120° 90° 60° 30° 90 VSK.41 Series Per leg, Tj = 125°C 80 0 10 20 30 40 50 Average on-state current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics Maximum allowable case temperature (°C) 130 Peak half sine wave on-state current (A) 800 VSK.41 Series RthJC (DC) = 0.44 °C/W 120 110 100 90 80 70 0 700 At any rated load condition and with rated Vrrm applied following surge Initial Tj = Tj max @ 60 Hz 0.0083 s @ 50 Hz 0.0100s 600 DC 180° 120° 90° 60° 30° 500 400 Per leg 300 1 10 100 Number of equal amplitude half cycle current pulses (N) 10 20 30 40 50 60 70 80 Average on-state current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum average on-state power loss (W) 80 Peak half sine wave on-state current (A) 900 180° 120° 90° 60° 30° 70 60 50 40 30 20 10 0 0 800 700 600 500 400 RMS limit Maximum Non-repetitive Surge Current Versus Pulse Train Duration. Control of conduction may not be maintaned. Initial Tj = 125°C No Voltage Reapplied Rated Vrrm reapplied VSK.41 Series Per leg, Tj = 125°C Per leg 5 10 15 20 25 30 35 40 45 50 Average on-state current (A) 300 0.01 0.1 Pulse train duration (s) 1 Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94630 Revision: 17-May-10 VSK.41.., VSK.56.. Series ADD-A-PAK Generation VII Power Modules Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A 160 Maximum total on-state power loss (W) RthSA = 0.1 °C/W 0.3 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 1.5 °C/W 2 °C/W 3 °C/W 5 °C/W 140 120 100 80 60 40 20 0 0 20 40 180° 120° 90° 60° 30° VSK.41 Series Per module Tj = 125°C 60 80 100 0 20 40 60 80 100 120 140 Total RMS output current (A) Maximum allowable ambient temperature (°C) Fig. 7 - On-State Power Loss Characteristics 350 Maximum total power loss (W) 300 250 200 ∼ 180° (sine) 180° (rect) RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 1.5 °C/W 150 100 50 0 0 20 40 60 80 0 100 20 40 60 80 100 120 140 Total output current (A) Maximum allowable ambient temperature (°C) 2 x VSK.41 Series single phase bridge connected Tj = 125°C Fig. 8 - On-State Power Loss Characteristics 500 Maximum total power loss (W) RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 400 120° (rect) 300 200 100 3 x VSK.41 Series three phase bridge connected Tj = 125°C 0 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 Total output current (A) Maximum allowable ambient temperature (°C) Fig. 9 - On-State Power Loss Characteristics Document Number: 94630 Revision: 17-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VSK.41.., VSK.56.. Series Vishay Semiconductors Maximum allowable case temperature (°C) ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A Maximum average on-state power loss (W) 130 VSK.56 Series RthJC (DC) = 0.35°C/W 140 120 100 80 RMS limit 60 40 20 0 0 20 40 60 80 100 Average on-state current (A) VSK.56 Series Per leg, Tj = 125°C 120 180° 120° 90° 60° 30° DC 110 100 180° 120° 90° 60° 30° 90 80 0 10 20 30 40 50 60 70 Average on-state current (A) Fig. 10 - Current Ratings Characteristics Fig. 13 - On-State Power Loss Characteristics Maximum allowable case temperature (°C) 130 Peak half sine wave on-state current (A) VSK.56 Series RthJC (DC) = 0.35 °C/W 1100 1000 900 800 700 600 500 400 1 10 100 Number of equal amplitude half cycle current pulses (N) Per leg 120 110 100 90 80 70 0 20 40 60 80 100 Average on-state current (A) DC 180° 120° 90° 60° 30° At any rated load condition and with rated Vrrm applied following surge Initial Tj = Tj max @ 60 Hz 0.0083 s @ 50 Hz 0.0100s Fig. 11 - Current Ratings Characteristics Fig. 14 - Maximum Non-Repetitive Surge Current Maximum average on-state power loss (W) 100 Peak half sine wave on-state current (A) 180° 120° 90° 60° 30° 1300 1200 1100 1000 900 800 700 600 500 400 0.01 Per leg 80 60 RMS limit 40 Maximum Non-repetitive Surge Current Versus Pulse Train Duration. Control of conduction may not be maintained. Initial Tj = 125°C No Voltage Reapplied Rated Vrrm reapplied 20 VSK.56 Series Per leg, Tj = 125°C 0 0 10 20 30 40 50 60 70 Average on-state current (A) 0.1 Pulse train duration (s) 1 Fig. 12 - On-State Power Loss Characteristics Fig. 15 - Maximum Non-Repetitive Surge Current www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94630 Revision: 17-May-10 VSK.41.., VSK.56.. Series ADD-A-PAK Generation VII Power Modules Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A 250 Maximum total on-state power loss (W) 180° 120° 90° 60° 30° RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.4 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 1.5 °C/W 2 °C/W 4 °C/W 200 150 100 50 VSK.56 Series Per module Tj = 125°C 0 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 Total RMS output current (A) Maximum allowable ambient temperature (°C) Fig. 16 - On-State Power Loss Characteristics 600 Maximum total power loss (W) 500 400 300 200 100 0 0 20 40 ∼ 180° (sine) 180° (rect) RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 2 °C/W 2 x VSK.56 Series single phase bridge connected Tj = 125°C 60 80 100 120 140 0 20 40 60 80 100 120 140 Total output current (A) Maximum allowable ambient temperature (°C) Fig. 17 - On-State Power Loss Characteristics 700 Maximum total power loss (W) 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 180 0 Total output current (A) 3 x VSK.56 Series three phase bridge connected Tj = 125°C 120° (rect) RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 20 40 60 80 100 120 140 Maximum allowable ambient temperature (°C) Fig. 18 - On-State Power Loss Characteristics Document Number: 94630 Revision: 17-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 VSK.41.., VSK.56.. Series Vishay Semiconductors 1000 Instantaneous on-state current (A) Instantaneous on-state current (A) VSK. 41 Series Per leg ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A 1000 VSK. 56 Series Per leg 100 100 10 Tj = 125°C Tj = 25°C 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Instantaneous on-state voltage (V) 10 Tj = 125°C Tj = 25°C 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Instantaneous on-state voltage (V) Fig. 19 - On-State Voltage Drop Characteristics Fig. 20 - On-State Voltage Drop Characteristics Transient thermal impedance Z thJC ( °C/W) 1 Steady state value RthJC = 0.44 °C/W RthJC = 0.35 °C/W (DC operation) 0.1 VSK.41 Series VSK.56 Series Per leg 0.01 0.001 0.01 0.1 Square wave pulse duration (s) 1 10 Fig. 21 - Thermal Impedance ZthJC Characteristics 100 Instantaneous gate voltage (V) Rectangular gate pulse a)R ecommended load line for rated di/ dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for = 6 µs (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) T = -40 °C J T = 25 °C J J T = 125 °C 1 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 VSK. IR K.41../ .56.. S eries Frequency Limited by PG(AV) 10 100 1000 0.1 1 Instantaneous gate current (A) Fig. 22 - Gate Characteristics www.vishay.com 8 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94630 Revision: 17-May-10 VSK.41.., VSK.56.. Series ADD-A-PAK Generation VII Power Modules Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A ORDERING INFORMATION TABLE Device code VSK 1 1 2 3 4 - T 2 56 3 / 16 4 Module type Circuit configuration (see end of datasheet) Current code Voltage code (see Voltage Ratings table) 41 = 45 A 56 = 60 A Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION VSKT (1) VSKH ~ (1) VSKL ~ (1) VSKN ~ (1) - 1 1 1 1 2 + (2) 2 + (2) 2 + (2) 2 + (2) 3 45 76 45 3 3 76 45 3 (3) G1 K1 K2 G2 (4) (5) (7) (6) (3) G1 K1 (4) (5) (3) K2 G2 (7) (6) + (3) G1 K1 (4) (5) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95368 Document Number: 94630 Revision: 17-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 9 Outline Dimensions Vishay Semiconductors ADD-A-PAK Generation VII - Thyristor DIMENSIONS in millimeters (inches) Fast-on tab 2.8 x 0.8 (0.110 x 0.03) Viti M5 x 0.8 Screws M5 x 0.8 18 (0.7) REF. 6.7 ± 0.3 (0.26 ± 0.012) 15.5 ± 0.5 (0.6 ± 0.020) 80 ± 0.3 (3.15 ± 0.012) 22.6 ± 0.2 (0.89 ± 0.008) 2 3 76 45 15 ± 0.5 (0.59 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 92 ± 0.75 (3.6 ± 0.030) 5.8 ± 0.25 (0.228 ± 0.010) 6.3 ± 0.2 (0.248 ± 0.008) 4 ± 0.2 (0.157 ± 0.008) 1 30 ± 1 (1.18 ± 0.039) 30 ± 0.5 (1.18 ± 0.020) 35 REF. 29 ± 0.5 (1 ± 0.020) 24 ± 0.5 (1 ± 0.020) Document Number: 95368 Revision: 11-Nov-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1