VSKTF200-12HKP_10

VSK.F200..P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAK Power Modules), 200 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3500 VRMS isolating voltage • Industrial standard package • UL approved file E78996 MAGN-A-PAK • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY IT(AV) Type 200 A Modules - Thyristor, Fast DESCRIPTION This series of MAGN-A-PAK modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) IT(RMS) ITSM I2t I2t tq trr VDRM/VRRM TJ Range 50 Hz 60 Hz 50 Hz 60 Hz CHARACTERISTICS VALUES 200 TC 85 444 7600 8000 290 265 2900 20/25 2 800/1200 - 40 to 125 kA2s kA2s μs V °C A UNITS A °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 08 12 VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 800 1200 IRRM/IDRM AT TJ = 125 °C mA 50 VSK.F200- Document Number: 94422 Revision: 19-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VSK.F200..P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAK Power Modules), 200 A CURRENT CARRYING CAPABILITY ITM 180° el 180° el ITM 100 µs ITM FREQUENCY UNITS 50 Hz 400 Hz 2500 Hz 5000 Hz 10 000 Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt Case temperature Equivalent values for RC circuit 380 460 310 250 180 50 560 690 450 360 280 50 630 710 530 410 300 50 850 1060 760 560 410 50 2460 1570 630 410 50 3180 2080 860 560 50 V A/μs °C /μF A 80 % VDRM 50 85 10/0.47 50 60 85 80 % VDRM 60 10/0.47 85 80 % VDRM 60 10/0.47 ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive on-state, surge current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave As AC switch t = 10 ms ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sinusoidal half wave, initial TJ = 125 °C VALUES 200 85 444 7600 8000 6400 6700 290 265 205 187 2900 1.18 1.25 0.74 0.70 1.73 600 1000 V mA m kA2s V kA2s A UNITS A °C t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum Ipk = 600 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 °C, IT > 30 A TJ = 25 °C, VA = 12 V, Ra = 6 , Ig = 1A Low level value or threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Maximum holding current Maximum latching current www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94422 Revision: 19-Jul-10 VSK.F200..P Series Fast Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors (MAGN-A-PAK Power Modules), 200 A SWITCHING PARAMETER Maximum non-repetitive rate of rise Maximum recovery time Maximum turn-off time SYMBOL dI/dt trr tq TEST CONDITIONS Gate drive 20 V, 20 , tr  1 ms, VD = 80 % VDRM, TJ = 25 °C ITM = 350 A, dI/dt = - 25 A/μs, VR = 50 V, TJ = 25 °C ITM = 750 A; TJ = TJ maximum; dI/dt = - 25 A/μs; VR = 50 V; dV/dt = 400 V/μs linear to 80 % VDRM 20 VALUES K 800 2 25 μs J UNITS A/μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage RMS insulation voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt VINS IRRM, IDRM TEST CONDITIONS TJ = 125 °C, exponential to 67 % VDRM 50 Hz, circuit to base, TJ = 25 °C, t = 1 s TJ = 125 °C, rated VDRM/VRRM applied VALUES 1000 3000 50 UNITS V/μs V mA TRIGGERING PARAMETER Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Maximum DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM -VGT IGT VGT IGD VGD TEST CONDITIONS f = 50 Hz, d% = 50 TJ = 125 °C, f = 50 Hz, d% = 50 TJ = 125 °C, tp  5 ms TJ = 25 °C, Vak 12 V, Ra = 6 TJ = 125 °C, rated VDRM applied VALUES 60 10 10 5 200 3 20 0.25 UNITS W A V mA V mA V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Storage temperature range Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink per module MAP to heatsink Mounting torque ± 10 % busbar to MAP Approximate weight Case style SYMBOL TJ TStg RthJC RthC-hs DC operation Mounting surface flat, smooth and greased A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is not recommended, busbar should be used and restrained during tightening. Threads must be lubricated with a compound. TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.125 K/W 0.025 UNITS °C 4 to 6 (35 to 53) 500 17.8 N·m (lbf · in) g oz. MAGN-A-PAK Document Number: 94422 Revision: 19-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VSK.F200..P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAK Power Modules), 200 A RthJC CONDUCTION CONDUCTIONS ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.009 0.10 0.014 0.020 0.32 RECTANGULAR CONDUCTION 0.006 0.011 0.015 0.020 0.033 K/W UNITS Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Maximum Allowable Case T emperature (°C) 120 110 100 90 VSK.F 200.. S eries R thJC (DC) = 0.125 K/ W Maximum Average On-state Power L s (W) os 130 350 300 250 200 RMS Limit 150 100 50 0 0 40 80 120 160 200 Average On-state Current (A) Conduc tion Angle 180° 120° 90° 60° 30° Conduc tion Angle 30° 80 70 60 0 40 80 120 160 200 240 Average On-state Current (A) 60° 90° 120° 180° VSK.F 200.. S eries Per Junction TJ= 125°C Fig. 1 - Current Ratings Characteristics Fig. 3 - On-State Power Loss Characteristics Maximum Allowable Cas T e emperature (°C) 120 110 100 90 VSK.F 200.. S eries R thJC (DC) = 0.125 K/ W Maximum Average On-s tate Power L s (W) os 130 500 450 400 350 300 250 200 RMS Limit 150 100 50 0 0 50 100 150 200 250 300 350 Average On-state Current (A) Conduction Period DC 180° 120° 90° 60° 30° Conduction Period 30° 80 70 60 0 50 100 150 200 250 300 350 Average On-state Current (A) 60° 90° 120° 180° DC VSK.F 200.. S eries Per Junction TJ = 125°C Fig. 2 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94422 Revision: 19-Jul-10 VSK.F200..P Series Fast Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors (MAGN-A-PAK Power Modules), 200 A Peak Half S ine Wave On-s tate Current (A) (K/ W) 7000 1 S teady S tate Value: R thJC = 0.125 K/ W (DC Operation) 0.1 5000 T ransient T hermal Impedance Z 6000 At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial TJ= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s thJC 0.01 4000 VSK.F200.. S eries Per Junction 3000 1 10 100 Numb er Of Equa l Amplitude Half Cyc le Current Pulses (N) VSK.F 200.. S eries Per Junc tion 0.001 0.001 0.01 0.1 1 10 100 S quare Wave Puls Duration (s) e Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 8 - Thermal Impedance ZthJC Characteristics Peak Half S Wave On-state Current (A) ine 8000 7000 6000 Ma ximum Non Rep etitive S urge Current Versus Pulse T rain Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C J No Voltage R eap plied R ated VRRMR eapplied Maximum R evers R e ecovery Charge - Qrr (µC) 320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 50 VSK.F200.. S eries TJ = 125°C 60 70 80 90 100 IT = 1000 A M 500 A 300 A 200 A 100 A 5000 4000 VSK.F 200.. S eries Per Junction 3000 0.01 0.1 Pulse T rain Duration (s) 1 R ate Of Fall Of Forward Current - di/ dt (A/ µs ) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 9 - Reverse Recovery Charge Characteristics Maximum R everse R overy Current - Irr (A) ec 10000 Instantaneous On-state Current (A) 180 I T = 1000A M 500A 300A 200A 100A 150 120 1000 TJ= 25°C TJ= 125°C VSK.F200.. Series Per Junc tion 100 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) 90 60 VSK.F200.. S eries TJ = 125°C 20 30 40 50 60 70 80 90 100 30 10 R ate Of Fall Of Forward Current - di/ dt (A/ µs ) Fig. 7 - On-State Voltage Drop Characteristics Fig. 10 - Reverse Recovery Current Characteristics Document Number: 94422 Revision: 19-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VSK.F200..P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAK Power Modules), 200 A 1E4 Peak On-stata Current (A) 50 Hz 150 400 50 Hz 150 400 1000 2500 5000 1E3 2500 5000 1000 1E2 VSK.F200.. S eries S inusoidal pulse TC = 85°C S nub ber c irc uit R s= 10 ohms C s = 0.47 µF V D = 80% V DRM tp 1E1 1E1 tp 1E1 1E1 VSK.F200.. S eries S inusoidal pulse T C = 60°C S nubber circuit R s= 10 ohms C s = 0.47 µF V D = 80% V DRM 1E 2 1E3 1E 1E 4 4 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics 1E4 VSK.F200.. S eries T rapezoid a l pulse TC= 85°C d i/d t 50A/ µs Peak On-s tate Current (A) tp tp VSK.F200.. Series T rapezoidal pulse TC = 85°C di/ dt 100A/ µs 50 Hz 150 150 400 1000 2500 400 1000 2500 5000 50 Hz 1E3 S nubber circ uit R s= 10 ohms C s = 0.47 µF V D = 80% V DRM 5000 S nubber circ uit R s= 10 ohms C s = 0.47 µF V D = 80% V DRM 1E2 1E1 1E2 1E 3 1E4 1E 4 1E1 E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics 1E4 Peak On-s tate Current (A) 50 Hz 50 Hz 150 400 400 1000 2500 5000 150 1E3 2500 5000 1000 tp 1E2 1E1 VSK.F200.. S eries T rapezoidal pulse TC= 60°C di/ dt 50A/ µs S nubber circ uit R s= 10 ohms C s = 0.47 µF V D = 80% V DRM tp 1E1 E1 VSK.F200.. S eries T rapezoidal pulse TC= 60°C di/ dt 100A/ µs S nubber circ uit R s= 10 ohms C s = 0.47 µF V D = 80% V DRM 1E2 1E3 1E4 1E4 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94422 Revision: 19-Jul-10 VSK.F200..P Series Fast Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors (MAGN-A-PAK Power Modules), 200 A 1E4 10 joules per pulse 10 joules per pulse 5 2.5 1 0.5 0.25 0.1 0.05 Peak On-state Current (A) 2.5 1 5 1E3 0.05 0.5 0.25 0.1 1E2 tp VSK.F200.. S eries S inusoidal pulse VSK.F200.. S eries T rapezoidal pulse d i/ dt 50A/ µs tp 1E1 1E 1 1E2 1E3 1E4 1E4 E1 1 1E 1E2 1E3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-State Energy Power Loss Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/ dt : 10V, 10ohms b) Recommended load line for