VSLY3850

VSLY3850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 850 nm • High speed • High radiant power • High radiant intensity 94 8636 • Angle of half intensity:  = ± 18° • Suitable for high pulse current operation • Good spectral matching with CMOS cameras • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition DESCRIPTION VSLY3850 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and high speed, molded in a clear, untinted T1 plastic package. APPLICATIONS • Infrared radiation source for operation with CMOS cameras • High speed IR data transmission • 3D TV application • Light curtains PRODUCT SUMMARY COMPONENT VSLY3850 Ie (mW/sr) 70  (deg) ± 18 p (nm) 850 tr (ns) 10 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSLY3850 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient t  5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB tp/T = 0.5, tp = 100 μs tp = 100 μs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 1 190 100 - 40 to + 85 - 40 to + 100 260 300 UNIT V mA mA A mW °C °C °C °C K/W Document Number: 82395 Rev. 1.0, 13-Oct-10 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 VSLY3850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology 200 180 120 100 80 60 RthJA = 300 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 22323 PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 RthJA = 300 K/W IF - Forward Current (mA) 0 10 20 30 40 50 60 70 80 90 100 22322 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time IF = 30 mA IF = 30 mA IF = 30 mA IF = 100 mA, 20 % to 80 % IF = 100 mA, 20 % to 80 % VR = 0 V, f = 1 MHz, E = 0 mW/cm2 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA, tp = 20 ms IF = 1 mA TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 1 mA IF = 10 mA SYMBOL VF VF TKVF TKVF IR CJ Ie Ie e TKe  p  TKp tr tf 840 35 MIN. TYP. 1.65 2.9 - 1.45 - 1.25 not designed for reverse operation 125 70 600 55 - 0.35 ± 18 850 30 0.25 10 10 870 105 MAX. 1.9 UNIT V V mV/K mV/K μA pF mW/sr mW/sr mW %/K deg nm nm nm ns ns www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 82395 Rev. 1.0, 13-Oct-10 VSLY3850 High Speed Infrared Emitting Diode, Vishay Semiconductors 850 nm, Surface Emitter Technology BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 tp = 100 µs 1000 IF - Forward Current (A) Radiant Power (mW) e- 1 100 0.1 10 0.01 1 0.001 0 22097 0.1 0.5 1 1.5 2 2.5 3 3.5 16971 1 VF - Forward Voltage (V) 10 100 IF - Forward Current (mA) 1000 Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Radiant Power vs. Forward Current Φe, rel - Relative Radiant Power 1000 tp/T = 0.01 0.02 Tamb < 50 °C 1 IF = 30 mA 0.75 IF - Forward Current (mA) 0.05 0.1 0.5 0.2 0.5 100 0.01 0.25 0.1 1 10 100 21776-1 0 650 750 850 950 16031 tp - Pulse Duration (ms) λ - Wavelength (nm) Fig. 4 - Pulse Forward Current vs. Pulse Duration Fig. 7 - Relative Radiant Power vs. Wavelength 1000 0° 10° 20° 30° Ie rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 100 40° 1.0 0.9 0.8 50° 60° 70° 80° 0.7 0.6 0.4 0.2 0 10 tp = 100 µs 1 0.1 0.001 21951 0.01 0.1 1 21355 IF - Forward Current (A) Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 82395 Rev. 1.0, 13-Oct-10 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 ϕ - Angular Displacement VSLY3850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology PACKAGE DIMENSIONS in millimeters C A ± 0.15 3.2 R 1.4 (sphere) ± 0.3 ± 0.1 4.5 3.5 (2.5) < 0.6 ± 0.5 30.3 5.8 ± 0.3 Area not plane 2.9 ± 0.1 ± 0.25 0.4 0.6 ± 0.15 + 0.15 - 0.05 1.5 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5264.01-4 Issue: 2; 23.04.98 95 10951 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 82395 Rev. 1.0, 13-Oct-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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