VSLY5850

VSLY5850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Narrow angle of half intensity:  = ± 3° Suitable for high pulse current operation Good spectral matching with CMOS cameras Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 22114 DESCRIPTION VSLY5850 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and high speed, molded in a clear, untinted plastic package, with a parabolic lens. APPLICATIONS • Infrared radiation source for operation with CMOS cameras • High speed IR data transmission • Smoke-automatic fire detectors • IR Flash PRODUCT SUMMARY COMPONENT VSLY5850 Ie (mW/sr) 600  (deg) ±3 p (nm) 850 tr (ns) 10 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSLY5850 Note • MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient t  5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB tp/T = 0.5, tp = 100 μs tp = 100 μs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 1 190 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 83160 Rev. 1.0, 13-Oct-10 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 VSLY5850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology 200 180 120 100 80 RthJA = 230 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 22115 PV - Power Dissipation (mW) 140 120 100 80 60 40 20 0 RthJA = 230 K/W IF - Forward Current (mA) 160 0 10 20 30 40 50 60 70 80 90 100 22116 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA, tp = 20 ms IF = 100 mA TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 1 mA IF = 10 mA SYMBOL VF VF TKVF TKVF IR Cj Ie Ie e TKe  p  TKp tr tf 840 300 MIN. TYP. 1.65 2.9 - 1.45 - 1.25 not designed for reverse operation 125 600 5100 55 - 0.35 ±3 850 30 0.25 10 10 870 900 MAX. 1.9 UNIT V V mV/K mV/K μA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 83160 Rev. 1.0, 13-Oct-10 VSLY5850 High Speed Infrared Emitting Diode, Vishay Semiconductors 850 nm, Surface Emitter Technology BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 tp/T = 0.01 0.02 Tamb < 50 °C 1000 IF - Forward Current (mA) Radiant Power (mW) e- 0.05 0.1 100 10 0.2 0.5 100 0.01 1 0.1 0.1 1 10 100 16971 1 10 100 1000 16031 tp - Pulse Duration (ms) IF - Forward Current (mA) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Radiant Power vs. Forward Current 10 1 Φe, rel - Relative Radiant Power tp = 100 µs IF = 30 mA 0.75 IF - Forward Current (A) 1 0.1 0.5 0.01 0.25 0.001 0 22097 0.5 1 1.5 2 2.5 3 3.5 21776-1 0 650 750 850 950 VF - Forward Voltage (V) λ - Wavelength (nm) Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Power vs. Wavelength 0° 10 000 10° 20° 30° ϕ - Angular Displacement 1000 Ie rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 40° 1.0 50° 0.9 60° 0.8 70° 80° 0.7 0.6 0.4 0.2 0 100 10 tP = 100 µs 1 0.001 22117 0.01 0.1 1 22132 IF - Forward Current (A) Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 83160 Rev. 1.0, 13-Oct-10 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 VSLY5850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology PACKAGE DIMENSIONS in millimeters 5.75 ± 0.15 A Chip position C technical drawings according to DIN specifications Ø 5 ± 0.15 Parabolic lens 5.4 ± 0.3 7.6 ± 0.15 35.85 ± 0.5 12.88 ± 0.3 8.6 ± 0.3 0.75 - 0.12 Aera not plane 1.5 ± 0.25 < 0.7 0.5 0.63 2.54 nom. Drawing-No.: 6.544-5385.01-4 Issue: 2; 08.03.10 20531 Not indicated tolerances ± 0.1 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 83160 Rev. 1.0, 13-Oct-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1