VSMF2890GX01

VSMF2890RGX01, VSMF2890GX01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH VSMF2890RGX01 VSMF2890GX01 FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • Peak wavelength: p = 890 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity:  = ± 12° • Low forward voltage • Suitable for high pulse current operation • Terminal configurations: gullwing or reserve gullwing DESCRIPTION VSMF2890RG(G)X01 series are infrared, 890 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). • Package matches with detector VEMD2000X01 series • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • IrDA compatible data transmission • 3D TV • Miniature light barrier • Photointerrupters • Optical switch • Shaft encoders • IR emitter source for proximity applications PRODUCT SUMMARY COMPONENT VSMF2890RGX01 VSMF2890GX01 Ie (mW/sr) 40 40  (deg) ± 12 ± 12 p (nm) 890 890 tr (ns) 30 30 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE VSMF2890RGX01 VSMF2890GX01 Note • MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 6000 pcs, 6000 pcs/reel MOQ: 6000 pcs, 6000 pcs/reel PACKAGE FORM Reverse gullwing Gullwing ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 85163 Rev. 1.0, 13-Apr-11 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF2890RGX01, VSMF2890GX01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Acc. figure 9, J-STD-020 J-STD-051, leads 7 mm, soldered on PCB tp/T = 0.5, tp  100 μs tp = 100 μs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 1 160 100 - 40 to + 85 - 40 to + 100 260 250 UNIT V mA mA A mW °C °C °C °C K/W 180 120 100 80 60 PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21344 RthJA = 250 K/W IF - Forward Current (mA) RthJA = 250 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21343 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERSITICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time Cut-off frequency Virtual source diameter IF = 30 mA IF = 30 mA IF = 30 mA IF = 100 mA, 20 % to 80 % IF = 100 mA, 20 % to 80 % IDC = 70 mA, IAC = 30 mA pp TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 1 mA IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 mW/cm2 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA, tp = 20 ms IF = 100 mA SYMBOL VF VF TKVF TKVF IR CJ Ie Ie e TKe  p  TKp tr tf fc d 870 20 125 40 350 40 - 0.35 ± 12 890 40 0.25 30 30 12 1.5 910 60 MIN. 1.25 TYP. 1.4 2.3 - 1.8 - 1.1 10 MAX. 1.6 UNIT V V mV/K mV/K μA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 85163 Rev. 1.0, 13-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF2890RGX01, VSMF2890GX01 High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH BASIC CHARACTERSITICS (Tamb = 25 °C, unless otherwise specified) Vishay Semiconductors 1000 1.25 Φe rel - Relative Radiant Power IF - Forward Current (mA) 1.0 100 0.75 tp = 100 µs 10 tp/T = 0.001 0.5 0.25 1 0 18873_1 1 2 3 4 20082 0 800 900 1000 VF - Forward Voltage (V) λ - Wavelength (nm) Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Power vs. Wavelength 0° 10° 20° 30° VF, rel - Relative Forward Voltage (%) 110 108 106 104 102 100 98 96 94 92 90 - 40 - 20 0 20 40 60 80 100 21550 Ie rel - Relative Radiant Intensity 40° 1.0 50° 0.9 60° 0.8 70° 0.7 0.6 0.4 0.2 0 80° IF = 100 mA IF = 10 mA tp = 20 ms IF = 1 mA 21443 Tamb - Ambient Temperature (°C) Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 1000 1000 tp/T = 0.01 0.02 Tamb < 50 °C Ie - Radiant Intensity (mW/sr) IF - Forward Current (mA) tp = 100 µs tp/T= 0.001 100 0.05 0.1 10 0.2 0.5 100 0.01 1 10 21487 100 1000 0.1 1 10 100 IF - Forward Current (mA) 16031 tp - Pulse Duration (ms) Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Pulse Forward Current vs. Pulse Duration Document Number: 85163 Rev. 1.0, 13-Apr-11 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ϕ - Angular Displacement VSMF2890RGX01, VSMF2890GX01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH SOLDER PROFILE 300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s max. 100 s FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. DRYING Time (s) 19841 Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS in millimeters: VSMF2890RGX01 0.4 Ø 1.8 ± 0.1 0.05 ± 0.1 Z 0.19 2.77 ± 0.2 1.6 2.2 2.2 5.8 ± 0.2 Z 20:1 1.1 ± 0.1 2.3 ± 0.2 exposed copper 0.3 2.3 ± 0.2 0.5 Cathode Pin ID Anode 0.4 1.7 0.75 Solder pad proposal acc. IPC 7351 technical drawings according to DIN specifications Not indicated tolerances ± 0.1 Ø 2.3 ± 0.1 6.7 Drawing-No.: 6.544-5391.02-4 Issue: 2; 18.03.10 21517 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 85163 Rev. 1.0, 13-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 0.254 VSMF2890RGX01, VSMF2890GX01 High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH PACKAGE DIMENSIONS in millimeters: VSMF2890GX01 0.4 Ø 1.8 Vishay Semiconductors 2.77 ± 0.2 X 1.6 0.05 2.2 0.19 2.2 4.2 ± 0.2 exposed copper 0.3 X 20:1 2.3 ± 0.2 0.5 2.3 ± 0.2 0.4 0.6 Cathode Pin ID Anode technical drawings according to DIN specifications 0.75 Solder pad proposal acc. IPC 7351 Not indicated tolerances ± 0.1 2.45 5.15 Drawing-No.: 6.544-5383.02-4 Issue: 4; 18.03.10 21488 0.254 Document Number: 85163 Rev. 1.0, 13-Apr-11 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF2890RGX01, VSMF2890GX01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH TAPING AND REEL DIMENSIONS in millimeters: VSMF2890RGX01 Reel Unreel direction X Ø 62 ± 0.5 2. 0.5 5± Tape position coming out from reel 6000 pcs/reel Ø 330 ± 1 Ø 13 ± 0.5 Label posted here 12.4 ± 1.5 Technical drawings according to DIN specifications Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Empty (400 mm min.) 1.75 ± 0.1 5.5 ± 0.05 4 ± 0.1 12 ± 0.3 Terminal position in tape Devicce VEMT2000 VEMT2500 VEMD2000 VEMD2500 Cathode VSMB2000 VSMG2000 VSMY2850RG Anode Cathode Anode Collector Emitter Ø 1.55 ± 0.05 I X 2:1 4 ± 0.1 2 ± 0.05 Lead I Lead II 3.05 ± 0.1 II Drawing-No.: 9.800-5100.01-4 Issue: 2; 18.03.10 21572 www.vishay.com 6 For technical questions, contact: emittertechsupport@vishay.com Document Number: 85163 Rev. 1.0, 13-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF2890RGX01, VSMF2890GX01 High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH TAPING AND REEL DIMENSIONS in millimeters: VSMF2890GX01 Reel Unreel direction X Vishay Semiconductors 2. Ø 62 ± 0.5 5± 0.5 Tape position coming out from reel 6000 pcs/reel Ø 330 ± 1 Ø 13 ± 0.5 Label posted here 12.4 ± 1.5 technical drawings according to DIN specifications Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Empty (400 mm min.) Terminal position in tape Ø 1.55 ± 0.05 Devicce VEMT2020 VEMT2520 VSMB2020 VSMG2020 VEMD2020 VEMD2520 VSMY2850G Anode Cathode Cathode Anode Collector Emitter 4 ± 0.1 2 ± 0.05 Lead I Lead II I X 2:1 1.75 ± 0.1 5.5 ± 0.05 12 ± 0.3 www.vishay.com 7 3.05 ± 0.1 II 4 ± 0.1 Drawing-No.: 9.800-5091.01-4 Issue: 3; 18.03.10 21571 Document Number: 85163 Rev. 1.0, 13-Apr-11 For technical questions, contact: emittertechsupport@vishay.com This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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