VSMY2850RG, VSMY2850G
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
FEATURES
VSMY2850RGX01 VSMY2850GX01
• Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • Peak wavelength: λp = 850 nm • High reliability • High radiant power • Very high radiant intensity • Angle of half intensity: ϕ = ± 10° • Suitable for high pulse current operation • Terminal configurations: gullwing or reserve gullwing • Package matches with detector VEMD2500X01 series • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
21725-3
DESCRIPTION
VSMY2850 series are infrared, 850 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).
APPLICATIONS
• IrDA compatible data transmission • Miniature light barrier • Photointerrupters • Optical switch • Emitter source for proximity sensors • IR touch panels • IR illumination
PRODUCT SUMMARY
COMPONENT VSMY2850RG VSMY2850G Ie (mW/sr) 100 100 ϕ (deg) ± 10 ± 10 λP (nm) 850 850 tr (ns) 10 10
Note • Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE VSMY2850RG VSMY2850G Note • MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 6000 pcs, 6000 pcs/reel MOQ: 6000 pcs, 6000 pcs/reel PACKAGE FORM Reverse gullwing Gullwing
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 83398 Rev. 1.0, 22-Dec-10 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1
VSMY2850RG, VSMY2850G
Vishay Semiconductors High Speed Infrared Emitting Diodes,
850 nm, Surface Emitter Technology
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient acc. figure 7, J-STD-020 J-STD-051, soldered on PCB tp/T = 0.5, tp = 100 μs tp = 100 μs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA
120 100 80 60 RthJA = 250 K/W 40 20 0 0
21890
VALUE 5 100 200 1 190 100 - 40 to + 85 - 40 to + 100 260 250
UNIT V mA mA A mW °C °C °C °C K/W
200 180
PV - Power Dissipation (mW)
160 140 120 100 80 60 40 20 0 10 20 30 40 50 60 70 80 90 100 RthJA = 250 K/W
IF - Forward Current (mA)
0
21891
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Virtual source diameter IF = 100 mA IF = 30 mA IF = 30 mA IF = 100 mA, 20 % to 80 % IF = 100 mA, 20 % to 80 % VR = 0 V, f = 1 MHz, E = 0 mW/cm2 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA, tp = 20 ms IF = 100 mA TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 1 mA IF = 10 mA SYMBOL VF VF TKVF TKVF IR CJ Ie Ie φe TKφe ϕ λp Δλ TKλp tr tf d 840 50 MIN. TYP. 1.65 2.9 - 1.45 - 1.3 not designed for reverse operation 125 100 850 55 - 0.35 ± 10 850 30 0.25 10 10 1.5 870 150 MAX. 1.9 UNIT V V mV/K mV/K μA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns mm
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 83398 Rev. 1.0, 22-Dec-10
VSMY2850RG, VSMY2850G
High Speed Infrared Emitting Diodes, Vishay Semiconductors 850 nm, Surface Emitter Technology
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
1
Φe, rel - Relative Radiant Power
tp = 100 µs
IF = 30 mA 0.75
IF - Forward Current (A)
1
0.1
0.5
0.01
0.25
0.001 0
22097
0.5
1
1.5
2
2.5
3
3.5
21776-1
0 650
750
850
950
VF - Forward Voltage (V)
λ - Wavelength (nm)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Radiant Power vs. Wavelength
0°
1000
10°
20°
30°
ϕ - Angular Displacement
Ie rel - Relative Radiant Intensity
Ie - Radiant Intensity (mW/sr)
tp = 100 µs
100
40° 1.0 50° 0.9 60° 0.8 70° 80° 0.7 0.6 0.4 0.2 0
10
1 0.001
22098
0.01
0.1
1
21111
IF - Forward Current (A)
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
SOLDER PROFILE
300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C
DRYPACK
Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant.
Temperature (°C)
200 max. 30 s 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s max. 100 s
FLOOR LIFE
Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %.
19841
Time (s)
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
Document Number: 83398 Rev. 1.0, 22-Dec-10
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 3
VSMY2850RG, VSMY2850G
Vishay Semiconductors High Speed Infrared Emitting Diodes,
850 nm, Surface Emitter Technology
PACKAGE DIMENSIONS in millimeters: VSMY2850RG
Ø 1.8 ± 0.1 0.4 0.05 ± 0.1
Z
2.77 ± 0.2
1.6
2.2 5.8 ± 0.2
2.2
Z 20:1
1.1 ± 0.1 Exposed copper 2.3 ± 0.2
2.3 ± 0.2
0.4
0.3
Anode
Pin ID
Cathode
1.7 0.75
Solder pad proposal acc. IPC 7351
technical drawings according to DIN specifications
Not indicated tolerances ± 0.1 Ø 2.3 ± 0.1
6.7
Drawing-No.: 6.544-5391.03-4 Issue: 1; 18.03.10
22100
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 83398 Rev. 1.0, 22-Dec-10
0.254
0.19
0.5
VSMY2850RG, VSMY2850G
High Speed Infrared Emitting Diodes, Vishay Semiconductors 850 nm, Surface Emitter Technology
PACKAGE DIMENSIONS in millimeters: VSMY2850G
Ø 1.8 0.4
2.77 ± 0.2
X
1.6
0.05
0.19
2.2 4.2 ± 0.2
2.2
Exposed copper
X 20:1
2.3 ± 0.2
0.4
0.3 2.3 ± 0.2 0.5 0.6 Anode Pin ID Cathode 0.75 Solder pad proposal acc. IPC 7351
technical drawings according to DIN specifications
Not indicated tolerances ± 0.1 2.45 5.15
Drawing-No.: 6.544-5383.03-4 Issue: 1; 18.03.10
22099
0.254
Document Number: 83398 Rev. 1.0, 22-Dec-10
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 5
VSMY2850RG, VSMY2850G
Vishay Semiconductors High Speed Infrared Emitting Diodes,
850 nm, Surface Emitter Technology
TAPING AND REEL DIMENSIONS in millimeters: VSMY2850RG
Reel Unreel direction X
Ø 62 ± 0.5
2. 0 5± .5
Tape position coming out from reel 6000 pcs/reel
Ø 330 ± 1
Ø
13
±
0.5
Label posted here 12.4 ± 1.5
Technical drawings according to DIN specifications
Leader and trailer tape: Empty (160 mm min.) Parts mounted
Direction of pulling out Empty (400 mm min.) 1.75 ± 0.1 5.5 ± 0.05 4 ± 0.1 12 ± 0.3
Terminal position in tape Devicce
VEMT2000 VEMT2500 VEMD2000 VEMD2500 Cathode VSMB2000 VSMG2000 VSMY2850RG Anode Cathode Anode Collector Emitter
Ø 1.55 ± 0.05 I X 2:1
4 ± 0.1 2 ± 0.05
Lead I
Lead II
3.05 ± 0.1 II
Drawing-No.: 9.800-5100.01-4 Issue: 2; 18.03.10
21572
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 83398 Rev. 1.0, 22-Dec-10
VSMY2850RG, VSMY2850G
High Speed Infrared Emitting Diodes, Vishay Semiconductors 850 nm, Surface Emitter Technology
TAPING AND REEL DIMENSIONS in millimeters: VSMY2850G
X
Reel
Unreel direction
2.
Ø 62 ± 0.5
5± 0.5
Tape position coming out from reel 6000 pcs/reel
Ø 330 ± 1
Ø
13
±
0.5
Label posted here 12.4 ± 1.5
technical drawings according to DIN specifications
Leader and trailer tape: Empty (160 mm min.) Parts mounted
Direction of pulling out Empty (400 mm min.) Terminal position in tape Ø 1.55 ± 0.05 Devicce
VEMT2020 VEMT2520 VSMB2020 VSMG2020 VEMD2020 VEMD2520 VSMY2850G Anode Cathode Cathode Anode Collector Emitter
4 ± 0.1 2 ± 0.05
Lead I
Lead II
I
X 2:1
1.75 ± 0.1 5.5 ± 0.05 12 ± 0.3
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3.05 ± 0.1 II 4 ± 0.1
Drawing-No.: 9.800-5091.01-4 Issue: 3; 18.03.09
21571
Document Number: 83398 Rev. 1.0, 22-Dec-10
For technical questions, contact: emittertechsupport@vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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