VSMY7850X01

VSMY7850X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • • • • Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity:  = ± 60° Low forward voltage Designed for high drive currents: up to 1 A DC and up to 4 A pulses Low thermal resistance: RthJP = 10 K/W Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21783 21783 DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance Little Star package. A 42 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1 A. APPLICATIONS • Infrared illumination for CMOS cameras (CCTV) • Driver assistance systems • Machine vision IR data transmission PRODUCT SUMMARY COMPONENT VSMY7850X01 Ie (mW/sr) 170  (deg) ± 60 p (nm) 850 tr (ns) 20 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSMY7850X01-GS08 Note • MOQ: minimum order quantity PACKAGING Tape and reel REMARKS MOQ: 2000 pcs, 2000 pcs/reel PACKAGE FORM Little Star ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/pin Document Number: 81145 Rev. 1.0, 31-Mar-11 Acc. figure 7, J-STD-20 Acc. J-STD-051, soldered on PCB tp/T = 0.5, tp  100 μs tp = 100 μs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJP VALUE 5 1 2 4 2.5 125 - 40 to + 100 - 40 to + 100 260 10 UNIT V A A A W °C °C °C °C K/W www.vishay.com 1 For technical questions, contact: emittertechsupport@vishay.com This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7850X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology 3 1.2 1.0 0.8 0.6 0.4 PV - Power Dissipation (W) 2 1.5 1 RthJP = 10 K/W 0.5 0 0 20 40 60 80 100 120 IF - Forward Current (A) 2.5 RthJP = 10 K/W 0.2 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time IF = 1 A IF = 1 A IF = 1 A IF = 1 A IF = 1 A TEST CONDITION IF = 1 A, tp = 20 ms IF = 4 A, tp = 100 μs IF = 1 A VR = 5 V IF = 1 A, tp = 20 ms IF = 4 A, tp = 100 μs IF = 1 A, tp = 20 ms IF = 1 A SYMBOL VF VF TKVF IR Ie Ie e TKe  p  TKp tr tf 130 170 630 520 - 0.5 ± 60 850 30 0.2 15 18 MIN. TYP. 2.0 3.2 - 0.2 10 390 MAX. 2.5 UNIT V V mV/K μA mW/sr mW/sr mW %/K deg nm nm nm/K ns ns www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81145 Rev. 1.0, 31-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7850X01 High Power Infrared Emitting Diode, Vishay Semiconductors 850 nm, Surface Emitter Technology BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 0° 10° 20° 30° Ie, rel - Relative Radiant Intensity tp = 100 µs IF - Forward Current (A) 1 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.1 0.01 0.001 0 0.5 1 1.5 2 2.5 3 3.5 94 8013 VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Intensity vs. Angular Displacement 1000 Ie - Radiant Intensity (mW/sr) tp = 100 µs 100 10 1 0.01 21778 0.1 1 10 IF - Forward Current (A) Fig. 4 - Radiant Intensity vs. Forward Current 1 Φe, rel - Relative Radiant Power 0.75 0.5 0.25 0 650 21776 750 850 950 λ- Wavelength (nm) Fig. 5 - Relative Radiant Power vs. Wavelength Document Number: 81145 Rev. 1.0, 31-Mar-11 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ϕ - Angular Displacement VSMY7850X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology TAPING DIMENSIONS in millimeters 20846 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81145 Rev. 1.0, 31-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7850X01 High Power Infrared Emitting Diode, Vishay Semiconductors 850 nm, Surface Emitter Technology PACKAGE DIMENSIONS in millimeters 20848 Document Number: 81145 Rev. 1.0, 31-Mar-11 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY7850X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology SOLDER PROFILE 300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE max. 30 s Temperature (°C) 200 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s max. 100 s Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020B DRYING Time (s) 19841 Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 for Preconditioning acc. to JEDEC, Level 2a In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. www.vishay.com 6 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81145 Rev. 1.0, 31-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000