VSMY7852X01
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
FFEATURES
• • • • • • • • • • • • • • • Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: = ± 60° Low forward voltage Designed for high drive currents: up to 250 mA DC and up to 1.5 A pulses Low thermal resistance: RthJP = 15 K/W Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
20783 20783
DESCRIPTION
VSMY7852X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance Little Star package. A 20 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 250 mA.
AAPPLICATIONS
• Infrared illumination for CMOS cameras (CCTV) • Driver assistance systems • Machine vision IR data transmission
PRODUCT SUMMARY
COMPONENT VSMY7852X01 Ie (mW/sr) 42 (deg) ± 60 p (nm) 850 tr (ns) 15
Note • Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE VSMY7852X01-GS08 Note • MOQ: minimum order quantity PACKAGING Tape and reel REMARKS MOQ: 2000 pcs, 2000 pcs/reel PACKAGE FORM Little Star
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/pin Document Number: 81146 Rev. 1.0, 31-Mar-11 Acc. figure 7, J-STD-20 Acc. J-STD-051, soldered on PCB tp/T = 0.5, tp 100 μs tp = 100 μs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJP VALUE 5 250 500 1.5 500 125 - 40 to + 100 - 40 to + 100 260 15 UNIT V mA mA A mW °C °C °C °C K/W www.vishay.com 1
For technical questions, contact: emittertechsupport@vishay.com
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7852X01
Vishay Semiconductors High Power Infrared Emitting Diode,
850 nm, Surface Emitter Technology
600
300 250 200 150 100
PV - Power Dissipation (mW)
400 300 200
RthJP = 15 K/W
100 0 0 20 40 60 80 100 120
IF - Forward Current (mA)
500
RthJP = 15 K/W
50 0 0 20 40 60 80 100 120
21779
Tamb - Ambient Temperature (°C)
21780
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Forward voltage Temperature coefficient of VF Reverse current Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time IF = 250 mA IF = 250 mA IF = 250 mA IF = 250 mA IF = 250 mA TEST CONDITION IF = 250 mA, tp = 20 ms IF = 1.5 A, tp = 100 μs IF = 1 mA VR = 5 V IF = 250 mA, tp = 20 ms IF = 1.5 A, tp = 100 μs IF = 250 mA, tp = 20 ms IF = 1 A SYMBOL VF VF TKVF IR Ie Ie e TKe p TKp tr tf 30 42 220 130 - 0.5 ± 60 850 30 0.2 8 10 MIN. TYP. 1.8 2.8 - 1.5 10 90 MAX. 2.0 UNIT V V mV/K μA mW/sr mW/sr mW %/K deg nm nm nm/K ns ns
www.vishay.com 2
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81146 Rev. 1.0, 31-Mar-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7852X01
High Power Infrared Emitting Diode, Vishay Semiconductors 850 nm, Surface Emitter Technology
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
0°
10°
20° 30°
Ie, rel - Relative Radiant Intensity
tp = 100 µs
IF - Forward Current (A)
1
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0
0.1
0.01
0.001 0
21781
0.5
1
1.5
2
2.5
3
94 8013
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
1000
Ie - Radiant Intensity (mW/sr)
tp = 100 µs
100
10
1
0.1 0.001
21782
0.01
0.1
1
10
IF - Forward Current (A)
Fig. 4 - Radiant Intensity vs. Forward Current
1
Φe, rel - Relative Radiant Power
0.75
0.5
0.25
0 650
21776
750
850
950
λ- Wavelength (nm)
Fig. 5 - Relative Radiant Power vs. Wavelength
Document Number: 81146 Rev. 1.0, 31-Mar-11
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 3
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ϕ - Angular Displacement
VSMY7852X01
Vishay Semiconductors High Power Infrared Emitting Diode,
850 nm, Surface Emitter Technology
TAPING DIMENSIONS in millimeters
20846
www.vishay.com 4
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81146 Rev. 1.0, 31-Mar-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7852X01
High Power Infrared Emitting Diode, Vishay Semiconductors 850 nm, Surface Emitter Technology
PACKAGE DIMENISONS in millimeters
20848
Document Number: 81146 Rev. 1.0, 31-Mar-11
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 5
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7852X01
Vishay Semiconductors High Power Infrared Emitting Diode,
850 nm, Surface Emitter Technology
SOLDER PROFILE
300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C
DRYPACK
Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
max. 30 s
Temperature (°C)
200 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s max. 100 s
Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020B
DRYING
Time (s)
19841
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 for Preconditioning acc. to JEDEC, Level 2a
In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %.
www.vishay.com 6
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81146 Rev. 1.0, 31-Mar-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000