VT10200C

VT10200C

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    VT10200C - Trench MOS Barrier Schottky Rectifier - Vishay Siliconix

  • 数据手册
  • 价格&库存
VT10200C 数据手册
New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AB TMBS ® FEATURES ITO-220AB • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 VT10200C PIN 1 PIN 3 PIN 2 CASE 3 1 VFT10200C PIN 1 PIN 3 PIN 2 2 3 • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. TO-263AB K K TO-262AA MECHANICAL DATA 2 1 1 VBT10200C PIN 1 PIN 2 K HEATSINK 2 3 Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per VIT10200C PIN 1 PIN 3 PIN 2 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 200 V 80 A 0.65 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode SYMBOL VRRM IF(AV) IFSM EAS IRRM dV/dt VAC TJ, TSTG VT10200C VFT10200C VBT10200C 200 10.0 5.0 80 30 0.5 10 000 1500 - 40 to + 150 VIT10200C UNIT V A A mJ A V/μs V °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range Document Number: 89177 Revision: 09-Dec-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 2.5 A Instantaneous forward voltage per diode IF = 5.0 A IF = 2.5 A IF = 5.0 A VR = 180 V Reverse current per diode VR = 200 V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms TA = 25 °C TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IR (2) SYMBOL VBR TYP. 200 (minimum) 0.81 1.10 0.58 0.65 1.7 1.8 2.5 MAX. 1.60 V 0.73 150 10 μA mA μA mA UNIT V THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER per diode Typical thermal resistance per device RθJC SYMBOL VT10200C 3.5 2.5 VFT10200C 7.0 5.5 VBT10200C 3.5 2.5 VIT10200C 3.5 °C/W 2.5 UNIT ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N VT10200C-E3/4W VFT10200C-E3/4W VBT10200C-E3/4W VBT10200C-E3/8W VIT10200C-E3/4W UNIT WEIGHT (g) 1.88 1.72 1.37 1.37 1.44 PACKAGE CODE 4W 4W 4W 8W 4W BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube DELIVERY MODE Tube Tube Tube Tape and reel Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 12 10 Resistive or Inductive Load 10 V(B,I)T10200C 9 D = 0.3 D = 0.5 D = 0.8 Average Forward Rectified Current (A) Average Power Disspation (W) 8 7 6 5 4 3 2 1 D = tp/T 0 1 2 3 4 5 6 7 8 9 tp 10 11 T D = 0.1 D = 1.0 D = 0.2 8 VFT10200C 6 4 Mounted on Specific Heatsink 2 0 0 25 50 75 100 125 150 0 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Device www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89177 Revision: 09-Dec-09 New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor 100 1000 TA = 150 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) TA = 100 °C 10 TA = 125 °C Junction Capacitance (pF) 100 1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 TA = 150 °C 1 TA = 125 °C TA = 100 °C 0.1 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) Junction to Case VFT10200C V(B,I)T10200C 0.01 0.001 TA = 25 °C 0.0001 20 30 40 50 60 70 80 90 100 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Device Document Number: 89177 Revision: 09-Dec-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 3 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 45° REF. 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.135 (3.43) DIA. 0.122 (3.08) DIA. ITO-220AB 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.600 (15.24) 0.580 (14.73) PIN 0.671 (17.04) 0.651 (16.54) 7° REF. 0.350 (8.89) 0.330 (8.38) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) PIN 2 1 2 3 7° REF. 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.191 (4.85) 0.171 (4.35) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.028 (0.71) 0.020 (0.51) TO-262AA 0.411 (10.45) MAX. 0.250 (6.35) MIN. K 0.055 (1.40) 0.047 (1.19) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 30° (TYP.) (REF.) 0.950 (24.13) 0.920 (23.37) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) PIN 2 0.510 (12.95) 0.470 (11.94) 3 0.350 (8.89) 0.330 (8.38) 0.401 (10.19) 0.381 (9.68) 0.110 (2.79) 0.100 (2.54) PIN 1 PIN 3 PIN 2 HEATSINK 0.560 (14.22) 0.530 (13.46) 0.104 (2.65) 0.096 (2.45) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) TO-263AB 0.41 (10.45) 1 0.380 (9.65) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 MIN. (10.66) 0.624 (15.85) 0.591(15.00) 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.33 (8.38) MIN. 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.140 (3.56) 0.110 (2.79) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) (0.095) (2.41) www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89177 Revision: 09-Dec-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
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