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WPWA0011000CD

WPWA0011000CD

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    WPWA0011000CD - Thin Film Power Resistors - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
WPWA0011000CD 数据手册
PWA Vishay Electro-Films Thin Film Power Resistors CHIP RESISTORS FEATURES • Wire bondable Product may not be to scale • 500 mW power • Chip size: 0.030 x 0.045 inches • Resistance range 0.3 Ω to 1 MΩ • Oxidized silicon substrate for good power dissipation • Resistor material: Tantalum nitride, self-passivating The PWA series resistor chips offer a 500 mW power rating in a small size. These offer one of the best combinations of size and power available. The PWAs are manufactured using Vishay Electro-Films (EFI) sophisticated thin film equipment and manufacturing technology. The PWAs are 100 % electrically tested and visually inspected to MIL-STD-883. APPLICATIONS The PWA resistor chips are used mainly in higher power circuits of amplifiers where increased power loads require a more specialized resistor. TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES AND TOLERANCES Tightest Standard Tolerance Available 5% 1% 0.5 % 0.1 % ± 25 ppm/°C ± 50 ppm/°C ± 100 ppm/°C ± 150 ppm/°C PROCESS CODE CLASS H* 002 001 000 009 *MIL-PRF-38534 inspection criteria CLASS K* 006 005 008 010 0.3 Ω 2 Ω 25 Ω 5Ω 100 Ω *600, - 100 ppm R < 2 Ω, ± 250 ppm for 2 Ω to 5 Ω 200 kΩ 500 kΩ 300 kΩ 1 MΩ STANDARD ELECTRICAL SPECIFICATIONS PARAMETER Noise, MIL-STD-202, Method 308 100 Ω - 250 kΩ < 100 Ω or > 251 kΩ Moisture Resistance, MIL-STD-202 Method 106 Stability, 1000 h, + 125 °C, 250 mW Operating Temperature Range Thermal Shock, MIL-STD-202, Method 107, Test Condition F High Temperature Exposure, + 150 °C, 100 h Dielectric Voltage Breakdown Insulation Resistance Operating Voltage Steady State 5 x Rated Power DC Power Rating at + 70 °C (Derated to Zero at + 175 °C) (Conductive Epoxy Die Attach to Alumina Substrate) 5 x Rated Power Short-Time Overload, + 25 °C, 5 s - 35 dB typ. - 20 dB typ. ± 0.5 % max. ΔR/R ± 0.5 % max. ΔR/R - 55 °C to + 125 °C ± 0.1 % max. ΔR/R ± 0.2 % max. ΔR/R 200 V 1012 min. 100 V max. 200 V max. 500 mW ± 0.1 % max. ΔR/R www.vishay.com 60 For technical questions, contact: efi@vishay.com Document Number: 61019 Revision: 12-Mar-08 PWA Thin Film Power Resistors Vishay Electro-Films DIMENSIONS in inches 0.030 0.024 0.007 0.007 0.030 0.024 0.007 CHIP RESISTORS 0.030 0.024 0.007 0.030 0.024 0.0045 0.045 0.045 0.045 0.007 TYPICAL RANGE 0.3 Ω - 1.3 Ω TYPICAL RANGE 1.4 Ω - 7.4 Ω TYPICAL RANGE 7.5 Ω - 42 Ω TYPICAL RANGE 43 Ω - 1 MΩ SCHEMATIC MECHANICAL SPECIFICATIONS in inches PARAMETER Chip Size Chip Thickness Chip Substrate Material Resistor Material Bonding Pad Size Number of Pads Pad Material Backing Options: Gold back for eutectic die attach Gold bonding pads, 15 kÅ minimum thickness Contact Applications Engineer 0.030 x 0.045 ± 0.002 (0.762 x 1.143 ± 0.5 mm) 0.010 ± 0.002 (0.254 ± 0.05 mm) Oxidized silicon, 10 kÅ minimum SiO2 Tantalum nitride, self-passivating 0.007 x 0.024 (0.1778 x 0.6096 mm) 2 10 kÅ minimum aluminum None, lapped semiconductor silicon ORDERING INFORMATION Example: 100 % visual, 10 kΩ, ± 1 %, ± 100 ppm/°C TCR, aluminum pads, class H visual inspection W INSPECTION/ PACKAGING W = 100 % visually inspected parts in matrix tray per MIL-STD-883 X = Sample, visually inspected parts loaded in matrix trays (4 % AQL) PWA PRODUCT FAMILY 000 PROCESS CODE See Process Code table 1000 RESISTANCE VALUE Use first 4 digits significant digits of the resistance 1 MULTIPLIER CODE D = 0.0001 C = 0.001 B = 0.01 A = 0.1 0=1 1 = 10 2 = 100 3 = 1000 F TOLERANCE CODE B = 0.1 % C = 0.2 % D = 0.5 % F = 1.0 % G = 2.0 % H = 2.5 % J = 5.0 % K = 10 % Document Number: 61019 Revision: 12-Mar-08 For technical questions, contact: efi@vishay.com www.vishay.com 61 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
WPWA0011000CD
1. 物料型号: - 型号为PWA系列,具体型号信息需根据订购信息确定。

2. 器件简介: - PWA系列电阻芯片提供500mW的功率等级,尺寸小,是尺寸和功率组合中较好的选择。这些电阻使用Vishay Electro-Films的先进薄膜设备和技术制造,100%经过电气测试和视觉检查,符合MIL-STD-883标准。

3. 引脚分配: - 电阻有两个焊盘,尺寸为0.007 x 0.024英寸(0.1778x 0.6096毫米),焊盘材料为至少10kA的铝。

4. 参数特性: - 电阻范围:0.3 Ω至1 MΩ。 - 芯片尺寸:0.030 x 0.045英寸(0.762x 1.143毫米)。 - 氧化硅基板,具有良好的功率耗散。 - 电阻材料:自钝化钽氮化物。 - 噪声:MIL-STD-202, Method 308标准下,100 - 250 kHz时典型值为-35 dB,大于251 kHz时为-20 dB。 - 湿度电阻:MIL-STD-202 Method 106下,最大±0.5%。 - 稳定性:1000小时,+125°C,250mW下,最大±0.5%。 - 工作温度范围:-55°C至+125°C。 - 热冲击:MIL-STD-202, Method 107, Test Condition F下,最大±0.1%。 - 高温暴露:+150°C,100小时下,最大±0.2%。 - 介质耐压:200V。 - 绝缘电阻:最小1012欧姆。 - 稳态工作电压:5倍额定功率下,最大100V(200V最大)。 - DC功率等级:+70°C下500mW(在+175°C下降至零)。

5. 功能详解: - 主要用于放大器的高功率电路中,这些电路需要更专业的电阻来承受增加的功率负载。

6. 应用信息: - PWA电阻芯片主要用于需要更高功率负载的放大器电路中。

7. 封装信息: - 芯片尺寸为0.030 x 0.045英寸(0.762x 1.143毫米),厚度为0.010英寸(0.254±0.05毫米)。 - 基板材料为氧化硅,至少10kA的SiO2。 - 无背衬,磨半导体硅。
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