VSC7923KF

VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7923 Features • Rise Times Less Than 100ps • High Speed Operation (Up to 2.4Gb/s NRZ Data) • Single-Ended or Differential Input Operation • Single Power Supply • Direct Access to Modulation and Bias FETs • Data Density Monitors SONET/SDH 2.5Gb/s Laser Diode Driver Applications • SONET/SDH at 622Mb/s, 1.244Gb/s, 2.488Gb/s, 3.125Gb/s • Full-Speed Fibre Channel (1.062Gb/s) General Description The VSC7923 is a single 5V supply, 2.4 Gb/s laser diode driver with direct access to the laser modulation and bias FET’s. Laser bias and modulation currents are set by external components allowing precision monitoring and setting of the current levels. Data inputs accept ECL levels. Data density outputs are provided to allow the user to adjust the laser bias in high unbalanced data applications. VSC7923 Block Diagram IOUT NIOUT MK NMK DIN VREF IMOD VIP IBIAS VIB MIP MIB G52203-0, Rev 3.0 05/11/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 1 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver Table 1: Signal Pin Reference Signal DIN MK, NMK NIOUT IOUT VSS GND VIP MIP VIB MIB VREF Total Pins VSC7923 Type In Out Out Out Pwr Pwr In In In In In Level ECL ECL # Pins 1 2 1 1 Data Input Description Data Density Differential Outputs Laser Modulation Current Output (Complementary) Laser Modulation Current Output (To Laser Cathode)) Negative Voltage Rail Positive Voltage Rail Modulation Gate Node Modulation Source Node Bias Gate Node Bias Source Node Data Input Reference Pwr Pwr DC DC DC DC DC 5 9 1 1 1 1 1 24 Table 2: Absolute Maximum Ratings Symbol VSS TJ TSTG Rating Negative Power Supply Voltage Maximum Junction Temperature Storage Temperature Limit VCC to -6.0V -55°C to + 125°C -65°C to +150°C Table 3: Recommended Operating Conditions Symbol GND VSS TCl TJ Parameter Positive Voltage Rail Negative Voltage Rail Operational Temperature(1) Junction Temperature Min — -5.5 -40 Typ 0 -5.2 Max — -4.9 85(2) 125 Units V V °C °C Conditions — — — Power dissipation = 1.25W NOTES: (1) Lower limit of specification is ambient temperature and upper limit is case temperature. (2) See section “Calculation of the Maximum Case Temperature” for detailed maximum temperature calculations. Table 4: ECL Input and Outputs Symbol VIN VOH VOL Parameter Input Voltage Swing ECL Output High Voltage ECL Output Low Voltage Min 300 -1200 Typ — — — Max 800 Units mV mV mV Conditions Peak-to-peak, VREF = -2.0V 50Ω to -2.0V 50Ω to -2.0V — -1600 — Page 2 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52203-0, Rev 3.0 05/11/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7923 Table 5: Power Dissipation Symbol IVSS PD PDMAX SONET/SDH 2.5Gb/s Laser Diode Driver Parameter Power Supply Current (VSS) Total Power Dissipation Maximum Power Dissipation Min — — — Typ — — — Max 220 1210 1815 Units mA mW mW Conditions VSS = -5.5V, IMOD = IBIAS = 0mA VSS = -5.5V, IMOD = IBIAS = 0mA, RLOAD = 25Ω to GND VSS = -5.5V, IMOD = 60mA, IBIAS = 50mA, IOUT = 0V Table 6: Laser Driver DC Electrical Specifications Symbol IBIAS IMOD VIB VIP VOCM Parameter Programmable Laser Bias Current Programmable Modulation Current Laser Bias Control Voltage Laser Modulation Control Voltage Output Voltage Compliance Min 2 2 — — GND 2.2V Typ — — — — — Max 50 60 VSS + 2.1 VSS + 2.1 — Units mA mA V V V — Conditions — IBIAS = 50mA IMOD= 60mA VSS = -5.2V Table 7: Laser Driver AC Electrical Specifications Symbol tR, tF Parameter Output Rise and Fall Times Min — Typ — Max 100 Units ps Conditions 25Ω load, 20%-80%, 15mA < IMOD < 60mA, IBIAS = 20mA Table 8: Package Thermal Specifications Symbol θJCC θJCMG Parameter Thermal Resistance from Junction-to-Case Thermal Resistance from Junction-to-Case Min — — Typ 25 32 Max — — Units °C/W °C/W Conditions Ceramic Package Metal Glass Package G52203-0, Rev 3.0 05/11/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 3 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver VSC7923 Calculation of the Maximum Case Temperature The VSC7923 is designed to operate with a maximum junction temperature of 125°C. The rise from the case to junction is determined by the power dissipation of the device. The power dissipation is determined by the VSS current plus the operating IMOD and IBIAS currents. The power of the chip is determined by the following formula: PD=(-VSS * ISS) + ((VIOUT – VSS) * IMOD) + ((VIBIAS – VSS) * IBIAS) For example with: VSS IMOD IBIAS VIBIAS VIOUT = = = = = -5.2V 40mA 20mA -2.0V -2.0V PD = 5.2 * 220mA) + ((5.2 - 2.0) * 40mA) + ((5.2-- 2.0) * 20mA) PD = 1144mW + 128mW + 64mW = 1.336W The thermal rise from junction to case is θJC * PD. For the metal glass package, θJC = 32 °C/W. Thus the thermal rise is: 32°C/W * 1.336W = 42.7°C The maximum case temperature is: 125°C – 42.7°C = 82.3°C The absolute maximum power dissipation of the device is at: VSS IMOD IBIAS VIBIAS VIOUT PD PD = = = = = -5.5V 60mA 50mA 0V 0V = (5.5 * 220mA) + (5.5 * 60mA) + (5.5mA * 50mA) = 1.815W This will net a maximum junction to case thermal rise of: 1.815W * 32°C/W = 58°C This situation will allow maximum case temperature of: 125°C – 58°C = 67°C Page 4 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52203-0, Rev 3.0 05/11/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7923 Input Termination Schemes SONET/SDH 2.5Gb/s Laser Diode Driver Figure 1: Input Structure OV (GND) 1400 DIN X VREF X 4300 1400 + 4300 • Nominal VREF = -1.3V • 1400, 4300 Ohm Resistor on die, nominal values -5.2V (VSS) Figure 2: Single Ended AC Coupled GND 0.1µF SOURCE GND DIN 50 Ohms GND X 50Ω VREF + X 0.1µF GND VSS - -2V Figure 3: Differential AC Coupled GND 0.1µF SOURCE 50Ω -2V 0.1µF DIN X GND GND + X GND GND VSS 50Ω -2V VREF G52203-0, Rev 3.0 05/11/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 5 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver Figure 4: Differential DC Coupled VSC7923 GND DIN X SOURCE GND GND 50Ω + X GND GND VSS 50Ω -2V -2V VREF Figure 5: Single Ended AC Coupled with Offset Adjust GND .01µF SOURCE GND GND DIN X 50Ω GND + VREF - X GND GND .01µF VSS 2000 4300 VSS Page 6 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52203-0, Rev 3.0 05/11/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7923 I (MIB) 50 mA SONET/SDH 2.5Gb/s Laser Diode Driver Figure 6: Control Signals VIP and VIB VIB 1.5V (Typical) 2.1V (Maximum) Typical Bias Current v.s. Bias Voltage I (MIP) 60 mA VIP 1.5V (Typical) 2.1V (Maximum) Typical Modulation Current v.s. Modulation Voltage Figure 7: Simplified Output Structure NIOUT IOUT X X IP X IMOD OUTPUT DIFF PAIR IBIAS X VIB X MIP X MIB G52203-0, Rev 3.0 05/11/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 7 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver Figure 8: Pad Assignments for VSC7923 Die 1720µm 1620µm 50µm 50µm VSC7923 50µm 120 120µm 150µm PAD 34 PAD 33 PAD 32 PAD 31 PAD 30 PAD 29 PAD 28 PAD 27 PAD 26 VREF VSS VSS VSS VSS VIP MIP MIP MIB PAD 1 DIN PAD 2 VSS PAD 3 DIN PAD 4 GND PAD 5 GND PAD 6 GND PAD 7 VSS PAD 8 VSS N/C PAD 9 PAD 25 VIB PAD 24 GND0 PAD 23 OUT PAD 22 OUT PAD 21 GND0 PAD 20 NOUT PAD 19 VSS PAD 18 VSS N/C GND GND GND GND GND NMARK MARK PAD 10 PAD 11 PAD 12 PAD 13 PAD 14 PAD 15 PAD 16 PAD 17 30µm 1620µm 1720µm 50µm NOTES: 1) Die size = 1620µm x 1620µm 2) Actual die size = 1720µm x 1720µm (after die are cut up) 3) Pad size = 120µm x 120µm 4) Pad pitch = 150µm 5) Space betwen pads = 30µm Page 8 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52203-0, Rev 3.0 05/11/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7923 SONET/SDH 2.5Gb/s Laser Diode Driver Pin Diagram for 24 Pin Metal-Glass Package VREF VSS VSS VIP MIP MIB 24 23 22 21 20 19 VSS DIN GND GND GND VSS 1 2 3 4 5 6 7 18 17 16 15 14 13 VIB GND IOUT GND NIOUT VSS Top View (LID) 8 9 10 11 12 N/C GND Note: Package bottom plate is connected to GND within the package. Package lid is electrically unconnected. G52203-0, Rev 3.0 05/11/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com GND GND MK MK Page 9 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver VSC7923 Package Information - 24 Pin Metal-Glass Package Top View Key A B C D E F G H I mm 7.11 6.10 1.02 0.76 0.30 2.08 1.02 9.52 0.13 In 0.280 0.240 0.040 0.030 0.012 0.082 0.040 0.375 0.005 (A) MAX Pin 1 (D) TYP (E) ± .002 (LID) Side View Package Top (B) (I) (F) MAX (H) (C) NOTES: Drawing not to scale. Package #: 101-291-8 Issue #:1 Lid #: 101-292-3 Issue #:1 Package Lid (G) Page 10 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52203-0, Rev 3.0 05/11/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7923 SONET/SDH 2.5Gb/s Laser Diode Driver Pin Diagram for 24 Pin Ceramic Package VREF VSS DIN GND GND GND VSS 24 1 2 3 4 5 6 7 23 22 21 20 19 18 17 16 15 14 MIB VSS VSS MIP VIP VIB GND IOUT GND NIOUT VSS 8 9 10 11 13 12 N/C GND GND GND NMK Note: Package bottom plate is connected to GND within the package. Package lid is electrically unconnected. G52203-0, Rev 3.0 05/11/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com MK Page 11 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver VSC7923 Package Information - 24 Pin Ceramic Package Top View Key A 24 23 22 21 20 19 mm 9.5 7.7 2.0 1.27 0.30 1.7 0.6 11.5 0.125 8.51 In 0.374 0.303 0.079 0.050 0.012 0.067 0.024 0.453 0.005 0.335 A B C D INDEX E 1 2 3 A 4 5 6 15 14 13 17 16 18 E F G H I J 7 8 9 10 11 D 12 Side View B I J H C G F NOTES: Drawing not to scale. Package #: 101-312-0 Issue #:1 L id #: 101-303-1 Issue #:1 Page 12 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52203-0, Rev 3.0 05/11/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7923 Ordering Information SONET/SDH 2.5Gb/s Laser Diode Driver The order number for this product is formed by a combination of the device number, and package style. VSC7923 Device Type 2.5Gb/s Laser Diode Driver XX Package Style (24 pin) CA: Metal Glass Package—Straight Leads KF: Ceramic Package—Straight Leads KFL: Ceramic Package—Formed Leads X: Bare Die Notice Vitesse Semiconductor Corporation (“Vitesse”) provides this document for informational purposes only. This document contains pre-production information about Vitesse products in their concept, development and/or testing phase. All information in this document, including descriptions of features, functions, performance, technical specifications and availability, is subject to change without notice at any time. Nothing contained in this document shall be construed as extending any warranty or promise, express or implied, that any Vitesse product will be available as described or will be suitable for or will accomplish any particular task. Vitesse products are not intended for use in life support appliances, devices or systems. Use of a Vitesse product in such applications without written consent is prohibited. G52203-0, Rev 3.0 05/11/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 13 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver VSC7923 Page 14 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52203-0, Rev 3.0 05/11/01