VSC7924KFL

VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7924 Features • Rise Times Less Than 100ps • High-Speed Operation (Up to 2.5Gb/s NRZ Data) • Single-Ended Operation • Single Power Supply • Direct Access to Modulation and Bias FETs • Data Density Monitors • 24-Pin Ceramic Package SONET/SDH 2.5Gb/s Laser Diode Driver Applications • SONET/SDH at 622Mb/s, 1.244Gb/s, and 2.488Gb/s • Full-Speed Fibre Channel (1.062Gb/s) General Description The VSC7924 is a single 5V supply, 2.5Gb/s laser diode driver with direct access to the laser modulation and bias FETs. Laser bias and modulation currents are set by external components allowing precision monitoring and setting of the current levels. Data inputs accept ECL levels. Data density outputs are provided to allow the user to adjust the laser bias in high unbalanced data applications. VSC7924 Block Diagram IOUT NIOUT MK NMK DIN VREF IMOD VIP *TERM VIB MIP MIB IBIAS *Terminated to Off-chip Capacitor G52156-0, Rev 3.0 05/01/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 1 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver Table 1: Signal Pin Reference Signal DIN MK, NMK NIOUT IOUT VSS GND VIP MIP VIB MIB VREF TERM Total Pins VSC7924 Description Data Input Data Density Differential Outputs Laser Modulation Current Output (Complementary) Laser Modulation Current Output (To Laser Cathode)) Negative Voltage Rail Positive Voltage Rail Modulation Gate Node Modulation Source Node Bias Gate Node Bias Source Node Data Input Reference Data Input Reference Type In Out Out Out Pwr Pwr In In In In In In Level ECL ECL # Pins 1 2 1 1 Pwr Pwr DC DC DC DC DC DC 5 8 1 1 1 1 1 1 24 Table 2: Absolute Maximum Ratings Symbol VSS TJ TSTG Rating Negative Power Supply Voltage Maximum Junction Temperature Storage Temperature Limit VCC to -6.0V -55°C to + 125°C -65°C to +150°C Table 3: ECL Input and Outputs Symbol VIN VOH VOL Parameter Input Voltage Swing ECL Output High Voltage ECL Output Low Voltage Min 300 -1200 -2000 Typ Max 800 -700 -1600 Units mV mV mV Conditions Peak-to-peak, VREF = -1.3V 50Ω to -2.0V 50Ω to -2.0V Table 4: Recommended Operating Conditions Symbol GND VSS TCl TJ Parameter Positive Voltage Rail Negative Voltage Rail Operational Temperature(1) Junction Temperature Min -5.5 -40 Typ 0 -5.2 Max -4.9 85(2) 125 Units V V °C °C Conditions Power dissipation = 1.25W NOTES: (1) Lower limit of specification is ambient temperature and upper limit is case temperature. (2) See “Calculation of the Maximum Case Temperature” section for detailed maximum temperature calculations. Page 2 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52156-0, Rev 3.0 05/01/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7924 Table 5: Power Dissipation Symbol IVSS PD PDMAX SONET/SDH 2.5Gb/s Laser Diode Driver Parameter Power Supply Current (VSS) Total Power Dissipation Maximum Power Dissipation Min Typ Max 220 1120 1815 Units mA mW mW Conditions VSS = -5.5V, IMOD = IBIAS = 0mA VSS = -5.5V, IMOD = IBIAS = 0mA, RLOAD = 25Ω to GND VSS = -5.5V, IMOD = 60mA, IBIAS = 50mA, IOUT = 0V Table 6: Laser Driver DC Electrical Specifications Symbol IBIAS IMOD VIB VIP VOCM Parameter Programmable Laser Bias Current Programmable Modulation Current Laser Bias Control Voltage Laser Modulation Control Voltage Output Voltage Compliance Min 2 2 Typ Max 50 60 VSS + 2.1 VSS + 2.1 Units mA mA V V V Conditions IBIAS = 50mA IMOD= 60mA VSS = -5.2V GND -2.2V Table 7: Laser Driver AC Electrical Specifications Symbol tR, tF Parameter Output Rise and Fall Times Min Typ Max 100 Units ps Conditions 25Ω load, 20%-80%, 15mA < IMOD < 60mA, IBIAS = 20mA Table 8: Package Thermal Specifications Symbol θJCC Parameter Thermal Resistance from junction-to-case Min Typ 25 Max Units °C/W Conditions Ceramic Package G52156-0, Rev 3.0 05/01/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 3 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver VSC7924 Calculation of the Maximum Case Temperature The VSC7924 is designed to operate with a maximum junction temperature of 125°C. The rise from the case to junction is determined by the power dissipation of the device. The power dissipation is determined by the VSS current plus the operating IMOD and IBIAS currents. The power of the chip is determined by the following formula: PD = (-VSS * ISS) + ((VIOUT – VSS) * IMOD) + ((VIBIAS – VSS) * IBIAS) For example with: VSS IMOD IBIAS VIBIAS VIOUT = = = = = -5.2V 40mA 20mA -2.0V -2.0V (-5.2 * 220mA) + ((5.2 - 2.0) * 40mA) + ((5.2-- 2.0) * 20mA) 1144mW + 128mW + 64mW = 1.336W PD = PD = The thermal rise from junction to case is θJC * PD. For the ceramic package, θJC = 25°C/W. Thus the thermal rise is: 25°C/W * 1.336W = 33.4°C The maximum case temperature is: 125°C – 33.4°C = 91.6°C The absolute maximum power dissipation of the device is at: VSS IMOD IBIAS VIBIAS VIOUT = = = = = -5.5V 60mA 50mA 0V 0V (5.5 * 220mA) + (5.5 * 60mA) + (5.5mA * 50mA) PD = 1.815W PD = This will net a maximum junction to case thermal rise of: 1.815W * 25°C/W = 45.4°C This situation will allow maximum case temperature of: 125°C – 45.4°C = 79.6°C Page 4 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52156-0, Rev 3.0 05/01/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7924 Input Termination Schemes SONET/SDH 2.5Gb/s Laser Diode Driver Figure 1: Input Structure OV (GND) 1.4kΩ 1400 1.4kΩ 1400 DIN X VREF X TERM X 12pF 3Ω + 4.3kΩ 4300 4.3kΩ 4300 • Nominal VREF = -1.3V • 1400, 4300 Ohm Resistor on die, nominal values Nominal VREF = 1.3V 1.4kΩ, 4.3kΩ resistor on die, nominal values GND -5.2V (VSS) Figure 2: Single-Ended AC Coupled GND 0.1µF SOURCE 50Ω -2V GND DIN X TERM or VREF + X 0.1µF VSS - Figure 3: Single Ended AC Coupled with Offset Adjust GND 0.1µf SOURCE 50Ω DIN X VREF + - X GND 3 VSS 2000 2kΩ 4.3kΩ 4300 X TERM 0.1µf GND Page 5 VSS G52156-0, Rev 3.0 05/01/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver Figure 4: Control Signals VIP and VIB I (MIB) 50 mA VSC7924 VIB 1.5V (Typical) 2.1V (Maximum) Typical Bias Current v.s. Bias Voltage I (MIP) 60 mA VIP 1.5V (Typical) 2.1V (Maximum) Typical Modulation Current v.s. Modulation Voltage Figure 5: Simplified Output Structure NIOUT IOUT X X VIP X IMOD OUTPUT DIFF PAIR IBIAS X VIB X MIP X MIB Page 6 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52156-0, Rev 3.0 05/01/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7924 1720 1620 SONET/SDH 2.5Gb/s Laser Diode Driver Figure 6: Pad Assignments for VSC7924 Die 50 50 50 120 120 150 PAD 34 PAD 33 PAD 32 PAD 31 PAD 30 PAD 29 VREF VSS VSS VSS VSS VIP PAD 1 DIN PAD 2 VSS PAD 3 DIN PAD 4 GND PAD 5 GND PAD 6 GND PAD 7 VSS PAD 8 VSS TERM PAD 9 TERM PAD 10 GND PAD 11 PAD 28 PAD 27 PAD 26 MIP MIP MIB PAD 25 VIB PAD 24 GND0 PAD 23 OUT PAD 22 OUT PAD 21 GND0 PAD 20 NOUT PAD 19 VSS PAD 18 VSS 30 1620 1720 GND GND GND GND NMARK MARK PAD 12 PAD 13 PAD 14 PAD 15 PAD 16 PAD 17 Dimensions in micrometers. 50 1) 2) 3) 4) 5) Die size = 1620µm x 1620µm Actual die size = 1720µm x 1720µm (after the die are cut up) Pad size = 120µm x 120µm Pad pitch = 150µm Space between pads = 30µm G52156-0, Rev 3.0 05/01/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 7 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver VSC7924 Pin Diagram for 24-Pin Ceramic Package VREF MIB 19 18 17 16 15 14 7 8 9 10 11 13 12 VSS VSS MIP 20 VIP 21 VSS DIN GND GND GND VSS 24 1 2 3 4 5 6 23 22 VIB GND IOUT GND NIOUT VSS TERM GND GND GND NMK Note: Package bottom plate is connected to GND within the package. Package lid is electrically unconnected. Page 8 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com MK G52156-0, Rev 3.0 05/01/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7924 SONET/SDH 2.5Gb/s Laser Diode Driver Package Information - 24 Pin Ceramic Package (Formed Leads) Top View Key A 24 23 22 21 20 19 mm 9.5 7.7 2.0 1.27 0.30 1.7 0.6 11.5 0.125 8.51 In 0.374 0.303 0.079 0.050 0.012 0.067 0.024 0.453 0.005 0.335 A B C D INDEX E 1 2 3 A 4 5 6 15 14 13 17 16 18 E F G H I J 7 8 9 10 11 D 12 Side View B I J H C G F NOTES: Drawing not to scale. Package #: 101-312-0 Issue #:1 L id #: 101-303-1 Issue #:1 G52156-0, Rev 3.0 05/01/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 9 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver VSC7924 Package Information - 24 Pin Ceramic Package (Straight Leads) Top View Key A 24 23 22 21 20 19 mm 9.5 7.7 5.8 1.27 0.30 1.7 0.6 9.53 0.125 8.51 In 0.374 0.303 .230 0.050 0.012 0.067 0.024 0.375 0.005 0.335 A B C D E E INDEX F 18 17 16 15 14 13 1 2 3 A 4 5 6 G H I J 7 8 9 10 11 D 12 Side View B I G F C H C NOTES: Drawing not to scale. Package #: 101-000-0 Issue #:1 Page 10 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52156-0, Rev 3.0 05/01/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7924 Ordering Information SONET/SDH 2.5Gb/s Laser Diode Driver The order number for this product is formed by a combination of the device number, and package style. VSC7924 Device Type VSC7924: 2.5Gb/s Laser Diode Driver XX Package Style KF: (Ceramic - Straight Leads) KFL: (Ceramic- Formed Leads) Notice Vitesse Semiconductor Corporation (“Vitesse”) provides this document for informational purposes only. This document contains pre-production information about Vitesse products in their concept, development and/or testing phase. All information in this document, including descriptions of features, functions, performance, technical specifications and availability, is subject to change without notice at any time. Nothing contained in this document shall be construed as extending any warranty or promise, express or implied, that any Vitesse product will be available as described or will be suitable for or will accomplish any particular task. Vitesse products are not intended for use in life support appliances, devices or systems. Use of a Vitesse product in such applications without written consent is prohibited. G52156-0, Rev 3.0 05/01/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 11 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver VSC7924 Page 12 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52156-0, Rev 3.0 05/01/01