VS3540AC

VS3540AC -30V/-3.4A P-Channel Advanced Power MOSFET Features  P-Channel  Enhancement mode  Fast Switching V DS -30 V R DS(on),max @VGS=-10V 52 mΩ R DS(on),max @VGS=-4.5V 62 mΩ ID -3.4 A  Pb-free lead plating; RoHS compliant SOT23 Part ID Package Type Marking VS3540AC SOT23 VS01 Tape and reel information 3000pcs/reel Maximum ratings, at T j =25 °C, unless otherwise specified Symbol V(BR)DSS VGS Parameter Rating Unit -30 V ±12 V TA =25°C -1.2 A TA =25°C -3.4 A TA =70°C -2.7 A Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-4.5V IDM Pulse drain current tested ① TA =25°C 12 A PD Maximum power dissipation TA =25°C 1 W -55 to 150 °C TSTG TJ Storage and operating temperature range Thermal Characteristics RθJL Thermal Resistance, Junction-to-Lead 80 °C/W R JA Thermal Resistance, Junction-to-Ambient 125 °C/W Copyright Vanguard Semiconductor Co., Ltd Rev B - AUG, 2018 www.vgsemi.com VS3540AC -30V/-3.4A P-Channel Advanced Power MOSFET Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ T j = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -30 -- -- V Zero Gate Voltage Drain Current(Tj=25℃) VDS=-30V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=-30V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±12V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=-250μA -0.5 -- -1.2 V VGS=-10V, ID=-4A -- 52 60 mΩ VGS=-4.5V, ID=-3A -- 62 70 mΩ VGS=-2.5V, ID=-2A -- 81 105 mΩ -- 805 -- pF -- 60 -- pF -- 50 -- pF -- 10 -- Ω -- 10 -- nC -- 2.3 -- nC -- 4.2 -- nC -- 4 -- ns V(BR)DSS IDSS RDS(ON) Drain-Source On-State Resistance② Dynamic Electrical Characteristics @ T j= 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-15V,VGS=0V, f=1MHz f=1MHz VDS=-15V,ID=-4A, VGS=-4.5V Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=-4A, -- 4 -- ns t d(off) Turn-Off Delay Time RG=3Ω, -- 28 -- ns tf Turn-Off Fall Time -- 4.6 -- ns VDD=-15 V, VGS=-4.5V Source- Drain Diode Characteristics@ Tj= 25°C (unless otherwise stated) VSD Forward on voltage ISD=-3A,VGS=0V -- -0.85 -1.2 V t rr Reverse Recovery Time Tj=25℃,Isd=-3A, -- 12 -- ns Qrr Reverse Recovery Charge -- 3.6 -- nC VGS=0V di/dt=-100A/μs NOTE: ① ② Repetitive rating; pulse width limited by max junction temperature. Pulse width ≤ 300μs; duty cycle≤ 2%. Copyright Vanguard Semiconductor Co., Ltd Rev B - AUG, 2018 www.vgsemi.com VS3540AC -30V/-3.4A P-Channel Advanced Power MOSFET -ID, Drain-Source Current (A) -VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Fig2. VGS(TH) Gate -Source Voltage Vs.Tj Normalized On Resistance -ID, Drain-Source Current (A) Tc, Case Temperature (°C) VGS, Gate -Source Voltage (V) Fig4. Normalized On-Resistance Vs. Tj -ID - Drain Current (A) -ISD, -Reverse Drain Current (A) Fig3. Typical Transfer Characteristics Tj - Junction Temperature (°C) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Copyright Vanguard Semiconductor Co., Ltd Rev B - AUG, 2018 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.vgsemi.com VS3540AC -30V/-3.4A P-Channel Advanced Power MOSFET C, Capacitance (pF) -VGS, Gate-Source Voltage (V) Typical Characteristics VDS , Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs.Drain-Source Voltage Qg -Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms Copyright Vanguard Semiconductor Co., Ltd Rev B - AUG, 2018 Fig11. Switching Time Test Circuit and waveforms www.vgsemi.com VS3540AC -30V/-3.4A P-Channel Advanced Power MOSFET Marking Information VS01 VS01： Part Number YM： Date Code，Y means assembly year (e.g. E=2017, F=2018, G=2019, H=2020, etc)， M means assembly month (e.g. 9=September, O=October, N=November, D=December, etc) Copyright Vanguard Semiconductor Co., Ltd Rev B - AUG, 2018 www.vgsemi.com VS3540AC -30V/-3.4A P-Channel Advanced Power MOSFET SOT23 Package Outline Data Label DIMENSIONS ( unit: mm ) Min Typ Max A 0.90 1.03 1.10 A1 0.01 0.05 0.10 bp 0.38 0.42 0.48 c 0.09 0.13 0.15 D 2.80 2.92 3.00 E 1.20 1.33 1.40 e -- 1.90 -- e1 -- 0.95 -- HE 2.10 2.40 2.50 Lp 0.40 0.50 0.60 Q 0.45 0.49 0.55 v -- 0.20 -- w -- 0.10 -- Notes: 1. Follow JEDEC TO-236, variation AB. 2. Dimension "D" does NOT include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.25mm per side. 3. Dimension "E" does NOT include interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.25mm per side. Customer Service Sales and Service: sales@vgsemi.com Vanguard Semiconductor CO., LTD TEL: (86-755) -26902410 FAX: (86-755) -26907027 WEB: www.vgsemi.com Copyright Vanguard Semiconductor Co., Ltd Rev B - AUG, 2018 www.vgsemi.com