W3EG2128M64ETSR265JD3XG

White Electronic Designs W3EG2128M64ETSR-JD3 ADVANCED* 2GB – 2x128Mx64 DDR SDRAM REGISTERED w/PLL FEATURES Double-data-rate architecture Clock speeds of 133MHz and 166MHz Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2,5 (clock) Programmable Burst Length (2,4,8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input Auto and self refresh Serial presence detect Dual Rank Power Supply: • VCC = VCCQ = +2.5V (133 and 166MHz) JEDEC standard 184 pin DIMM package PCB height: • JD3: 30.48mm (1.20") NOTE: Consult factory for availability of: • RoHS compliant products • Vendor source control options • Industrial temperature option * This product is under development, is not qualified or characterized and is subject to change or cancellation without notice. DESCRIPTION The W3EG2128M64ETSR is a 2x128Mx64 Double Data Rate SDRAM memory module based on1Gb DDR SDRAM component. The module consists of sixteen 128Mx8 DDR SDRAMs in 66 pin TSOP package mounted on a 184 Pin FR4 substrate. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lenths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. OPERATING FREQUENCIES DDR333 @CL=2.5 Clock Speed CL-tRCD-tRP 166MHz 2.5-3-3 DDR266 @CL=2 133MHz 2-3-3 DDR266 @CL=2.5 133MHz 2.5-3-3 April 2005 Rev. 0 1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs PIN CONFIGURATION PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 SYMBOL VREF DQ0 VSS DQ1 DQS0 DQ2 VCC DQ3 NC RESET# VSS DQ8 DQ9 DQS1 VCCQ NC NC VSS DQ10 DQ11 CKE0 VCCQ DQ16 DQ17 DQS2 VSS A9 DQ18 A7 VCCQ DQ19 A5 DQ24 VSS DQ25 DQS3 A4 VCC DQ26 DQ27 A2 VSS A1 NC NC VCC PIN 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 SYMBOL NC A0 NC VSS NC BA1 DQ32 VCCQ DQ33 DQS4 DQ34 VSS BA0 DQ35 DQ40 VCCQ WE# DQ41 CAS# VSS DQS5 DQ42 DQ43 VCC NC DQ48 DQ49 VSS NC NC VCCQ DQS6 DQ50 DQ51 VSS VCCID DQ56 DQ57 VCC DQS7 DQ58 DQ59 VSS NC SDA SCL PIN 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 SYMBOL VSS DQ4 DQ5 VCCQ DQM0 DQ6 DQ7 VSS NC NC NC VCCQ DQ12 DQ13 DQM1 VCC DQ14 DQ15 CKE1 VCCQ NC DQ20 A12 VSS DQ21 A11 DQM2 VCC DQ22 A8 DQ23 VSS A6 DQ28 DQ29 VCCQ DQM3 A3 DQ30 VSS DQ31 NC NC VCCQ CK0 CK0# PIN 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 SYMBOL VSS NC A10 NC VCCQ NC VSS DQ36 DQ37 VCC DQM4 DQ38 DQ39 VSS DQ44 RAS# DQ45 VCCQ CS0# CS1# DQM5 VSS DQ46 DQ47 NC VCCQ DQ52 DQ53 A13 VCC DQM6 DQ54 DQ55 VCCQ NC DQ60 DQ61 VSS DQM7 DQ62 DQ63 VCCQ SA0 SA1 SA2 VCCSPD W3EG2128M64ETSR-JD3 ADVANCED PIN NAMES A0-A13 BA0-BA1 DQ0-DQ63 DQS0-DQS7 CK0, CK0# CKE0, CKE1 CS0#, CS1# RAS# CAS# DQM0-DQM7 WE# VCC VCCQ VSS VREF VCCSPD SDA SCL SA0-SA2 VCCID NC RESET# Address input (Multiplexed) Bank Select Address Data Input/Output Data Strobe Input/Output Clock Input Clock Enable input Chip Select Input Row Address Strobe Column Address Strobe Data-in Mask Write Enable Power Supply (2.5V) Power Supply for DQS (2.5V) Ground Power Supply for Reference Serial EEPROM Power Supply (2.3V to 3.6V) Serial data I/O Serial clock Address in EEPROM VCC Indentification Flag No Connect Reset Enable April 2005 Rev. 0 2 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs W3EG2128M64ETSR-JD3 ADVANCED FUNCTIONAL BLOCK DIAGRAM RCS1# DQS4 DQM4 DQM DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS0 DQM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 RCS0# DQM CS# DQS DQ DQ DQ DQ DQ DQ DQ DQ DQM CS# DQS DQ DQ DQ DQ DQ DQ DQ DQ DQM DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DQS1 DQM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQM CS# DQS DQ DQ DQ DQ DQ DQ DQ DQ DQM DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DQS5 DQM5 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQM CS# DQS DQ DQ DQ DQ DQ DQ DQ DQ DQM DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DQS2 DQM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQM CS# DQS DQ DQ DQ DQ DQ DQ DQ DQ DQM DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DQS6 DQM6 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQM CS# DQS DQ DQ DQ DQ DQ DQ DQ DQ DQM DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DQS3 DQM3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQM CS# DQS DQ DQ DQ DQ DQ DQ DQ DQ DQM DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DQS7 DQM7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 DQM CS# DQS DQ DQ DQ DQ DQ DQ DQ DQ DQM DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS CS0# CS1# BA0-BA1 A0-A13 RAS# CAS# CKE0 CKE1 WE# PCK PCK# R E G I S T E R RCS0# RCS1# RBA0-RBA1 RA0-RA13 RRAS# RCAS# RCKE0 RCKE1 RWE# RESET# 120 BA0-BA1: SDRAMs A0-A13: SDRAMs RAS#: SDRAMs CAS#: SDRAMs CKE: SDRAMs CKE: SDRAMs WE#: DQRAMs CK0 CK0# PLL DDR SDRAMs REGISTER x 1 SERIAL PD SCL WP SDA A0 A1 A2 SA0 SA1 SA2 V CCSPD VCCQ V CC VREF VSS Note: All resistor values are 22Ω unless otherwise indicated. SPD DDR SDRAMS DDR SDRAMS DDR SDRAMS DDR SDRAMS April 2005 Rev. 0 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs W3EG2128M64ETSR-JD3 ADVANCED ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Current Note: Symbol VIN, VOUT VCC, VCCQ TSTG PD IOS Value -0.5 to 3.6 -1.0 to 3.6 -55 to +150 18 50 Units V V °C W mA Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability DC CHARACTERISTICS 0°C ≤ TA ≤ 70°C, VCC = 2.5V ± 0.2V Symbol VCC VCCQ VREF VTT VIH VIL VOH VOL Parameter Supply Voltage Supply Voltage Reference Voltage Termination Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Min 2.3 2.3 1.15 1.15 VREF + 0.15 -0.3 VTT + 0.76 — Max 2.7 2.7 1.35 1.35 VCCQ + 0.3 VREF -0.15 — VTT-0.76 Unit V V V V V V V V CAPACITANCE TA = 25°C. f = 1MHz, VCC = 2.5V Parameter Input Capacitance (A0-A13) Input Capacitance (RAS#,CAS#,WE#) Input Capacitance (CKE0) Input Capacitance (CK0#,CK0) Input Capacitance (CS0#) Input Capacitance (DQM0-DQM3, DQM5-DQM8) Input Capacitance (BA0-BA1) Data input/output capacitance (DQ0-DQ63)(DQS) Symbol CIN1 CIN2 CIN3 CIN4 CIN5 CIN6 CIN7 COUT Max 6.5 6.5 6.5 5.5 6.5 13 6.5 13 Unit pF pF pF pF pF pF pF pF April 2005 Rev. 0 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs W3EG2128M64ETSR-JD3 ADVANCED Recommended operating conditions, 0°C ≤ TA ≤ 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V Includes DDR SDRAM component only DDR333@ CL=2.5 Max 2080 DDR266@ CL=2 Max 2080 DDR266@ CL=2.5 Max 1880 IDD SPECIFICATIONS AND TEST CONDITIONS Parameter Operating Current Symbol IDD0 Conditions One device bank; Active - Precharge; tRC=tRC (MIN); tCK=tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. One device bank; Active-Read-Precharge Burst = 2; tRC=tRC (MIN); tCK=tCK (MIN); lOUT = 0mA; Address and control inputs changing once per clock cycle. All device banks idle; Power-down mode; tCK=tCK (MIN); CKE=(low) CS# = High; All device banks idle; tCK=tCK (MIN); CKE = high; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ, DQS and DM. One device bank active; Power-Down mode; tCK (MIN); CKE=(low) CS# = High; CKE = High; One device bank; ActivePrecharge; tRC=tRAS (MAX); tCK=tCK (MIN); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle. Burst = 2; Reads; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; TCK= TCK (MIN); lOUT = 0mA. Burst = 2; Writes; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK=tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle. tRC = tRC (MIN) CKE ≤ 0.2V Four bank interleaving Reads (BL=4) with auto precharge with tRC=tRC (MIN); tCK=tCK (MIN); Address and control inputs change only during Active Read or Write commands. Units mA Operating Current IDD1 2360 2360 2160 mA Precharge PowerDown Standby Current Idle Standby Current IDD2P IDD2F 160 1040 160 1040 160 960 rnA mA Active Power-Down Standby Current Active Standby Current IDD3P IDD3N 560 800 560 800 480 720 mA mA Operating Current IDD4R 2560 2560 2320 mA Operating Current IDD4W 2640 2640 2400 rnA Auto Refresh Current Self Refresh Current Operating Current IDD5 IDD6 IDD7A 3520 144 5000 3520 144 5000 3360 144 4600 mA mA mA April 2005 Rev. 0 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs W3EG2128M64ETSR-JD3 ADVANCED Recommended operating conditions, 0°C ≤ TA ≤ 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V Includes PLL and register power DDR333@ CL=2.5 Max 2720 DDR266@ CL=2 Max 2720 DDR266@ CL=2.5 Max 2520 IDD SPECIFICATIONS AND TEST CONDITIONS Parameter Operating Current Symbol IDD0 Conditions One device bank; Active - Precharge; tRC=tRC (MIN); tCK=tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. One device bank; Active-Read-Precharge Burst = 2; tRC=tRC (MIN); tCK=tCK (MIN); lOUT = 0mA; Address and control inputs changing once per clock cycle. All device banks idle; Power-down mode; tCK=tCK (MIN); CKE=(low) CS# = High; All device banks idle; tCK=tCK (MIN); CKE = high; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ, DQS and DM. One device bank active; Power-Down mode; tCK (MIN); CKE=(low) CS# = High; CKE = High; One device bank; ActivePrecharge; tRC=tRAS (MAX); tCK=tCK (MIN); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle. Burst = 2; Reads; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; TCK= TCK (MIN); lOUT = 0mA. Burst = 2; Writes; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK=tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle. tRC = tRC (MIN) CKE ≤ 0.2V Four bank interleaving Reads (BL=4) with auto precharge with tRC=tRC (MIN); tCK=tCK (MIN); Address and control inputs change only during Active Read or Write commands. Units mA Operating Current IDD1 3000 3000 2800 mA Precharge PowerDown Standby Current Idle Standby Current IDD2P IDD2F 160 1350 160 1350 160 1270 rnA mA Active Power-Down Standby Current Active Standby Current IDD3P IDD3N 560 1110 560 1110 480 1030 mA mA Operating Current IDD4R 3200 3200 2960 mA Operating Current IDD4W 3280 3280 3040 rnA Auto Refresh Current Self Refresh Current Operating Current IDD5 IDD6 IDD7A 4140 475 5640 4140 475 5640 3980 475 5240 mA mA mA April 2005 Rev. 0 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs W3EG2128M64ETSR-JD3 ADVANCED DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS Notes 1-5, 7; notes appear following parameter tables; 0°C ≤ TA ≤ +70°C; VCC = +2.5V ±0.2V, VCCQ = +2.5V ±0.2V AC Characteristics Parameter Access window of DQs from CK, CK# CK high-level width CK low-level width Clock cycle time CL=2.5 CL=2 DQ and DM input hold time relative to DQS DQ and DM input setup time relative to DQS DQ and DM input pulse width (for each input) Access window of DQS from CK, CK# DQS input high pulse width DQS input low pulse width DQS-DQ skew, DQS to last DQ valid, per group, per access Write command to first DQS latching transition DQS falling edge to CK rising - setup time DQS falling edge from CK rising - hold time Half clock period Data-out high-impedance window from CK, CK# Data-out low-impedance window from CK, CK# Address and control input hold time (fast slew rate) Address and control input set-up time (fast slew rate) Address and control input hold time (slow slew rate) Address and control input setup time (slow slew rate) Address and control input pulse width (for each input) LOAD MODE REGISTER command cycle time DQ-DQS hold, DQS to first DQ to go non-valid, per access Data hold skew factor ACTIVE to PRECHARGE command ACTIVE to READ with Auto precharge command ACTIVE to ACTIVE/AUTO REFRESH command period AUTO REFRESH command period Symbol tAC tCH tCL tCK (2.5) tCK (2) tDH tDS tDIPW tDQSCK tDQSH tDQSL tDQSQ tDQSS tDSS tDSH tHP tHZ tLZ tIHf tISf tIHs tISs tIPW tMRD tQH tQHS tRAS tRAP tRC tRFC 42 15 60 120 -0.7 0.75 0.75 0.8 0.8 2.2 12 tHP - tQHS 0.55 72,000 40 20 65 120 0.75 0.2 0.2 tCH, tCL 0.7 -0.75 0.90 0.90 1 1 2.2 15 tHP - tQHS 0.75 120,000 Min -0.7 0.45 0.45 6 7.5 0.45 0.45 1.75 -0.6 0.35 0.35 0.45 1.25 0.75 0.2 0.2 tCH, tCL 0.75 +0.6 335 Max +0.7 0.55 0.55 13 13 Min -0.75 0.45 0.45 7.5 10 0.5 0.5 1.75 -0.75 0.35 0.35 0.5 1.25 +0.75 263/265 Max +0.75 0.55 0.55 13 13 Units ns tCK tCK ns ns ns ns ns ns tCK tCK ns tCK tCK tCK ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 21 15 13, 14 18 8, 19 8, 20 6 6 6 6 13, 14 16 16 22 22 14, 17 14, 17 17 Notes April 2005 Rev. 0 7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs W3EG2128M64ETSR-JD3 ADVANCED DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (continued) Notes 1-5, 7; notes appear following parameter tables; 0°C ≤ TA ≤ +70°C; VCC = +2.5V ±0.2V, VCCQ = +2.5V ±0.2V AC Characteristics Parameter ACTIVE to READ or WRITE delay PRECHARGE command period DQS read preamble DQS read postamble ACTIVE bank a to ACTIVE bank b command DQS write preamble DQS write preamble setup time DQS write postamble Write recovery time Internal WRITE to READ command delay Data valid output window REFRESH to REFRESH command interval Average periodic refresh interval Terminating voltage delay to VCC Exit SELF REFRESH to non-READ command Exit SELF REFRESH to READ command Symbol tRCD tRP tRPRE tRPST tRRD tWPRE tWPRES tWPST tWR tWTR NA tREFC tREFI tVTD tXSNR tXSRD 0 126 200 Min 15 15 0.9 0.4 12 0.25 0 0.4 15 1 tQN - tDQSQ 70.3 7.8 0 127.5 200 1.1 0.6 335 Max Min 20 20 0.9 0.4 15 0.25 0 0.4 15 1 tQN - tDQSQ 70.3 7.8 1.1 0.6 263/265 Max Units ns ns tCK tCK ns tCK ns tCK ns tCK ns μs μs ns ns tCK 13 12 12 10, 11 9 19 Notes April 2005 Rev. 0 8 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs Notes 1. 2. All voltages referenced to VSS Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at normal reference / supply voltage levels, but the related specifications and device operations are guaranteed for the full voltage range specified. Outputs are measured with equivalent load: 13. 12. W3EG2128M64ETSR-JD3 ADVANCED The refresh period is 64ms. This equates to an average refresh rate of 15.625µs (256Mb component) or 7.8125µs (512 Mb component). However, an AUTO REFRESH command must be asserted at least once every 140.6µs (256 Mb component) or 70.3µs (512Mb component); burst refreshing or posting by the DRAM controller greater than eight refresh cycles is not allowed. The valid data window is derived by achieving other specifications - tHP (tCK/2), tDQSQ, and tQH (tQH = tHP - tQHS). The data valid window derates directly proportional with the clock duty cycle and a practical data valid window can be derived. The clock is allowed a maximum duty cycled variation of 45/55. Functionality is uncertain when operating beyond a 45/55 ratio. The data valid window derating curves are provided below for duty cycles ranging between 50/50 and 45/55. Referenced to each output group: x8 = DQS with DQ0-DQ8. READs and WRITEs with auto precharge are not allowed to be issued until tRAS (MIN) can be satisfied prior to the internal precharge command being issued. JEDEC specifies CK and CK# input slew rate must be > 1V/ns (2V/ns differentially). DQ and DM input slew rates must not deviate from DQS by more than 10%. If the DQ/DM/DQS slew rate is less than 0.5V/ns, timing must be derated: 50ps must be added to tDS and tDH for each 100mV/ns reduction in slew rate. If slew rates exceed 4V/ns, functionality is uncertain. tHP min is the lesser of tCL min and tCH min actually applied to the device CK and CK# inputs, collectively during bank active. This maximum value is derived from the referenced test load. In practice, the values obtained in a typical terminated design may reflect up to 310ps less for tHZ (MAX) and last DVW. tHZ (MAX) will prevail over the tDQSCK (MAX) + tRPST (MAX) condition. tLZ (MIN) will prevail over tDQSCK (MIN) + PRE (MAX) condition. For slew rates greater than 1V/ns the (LZ) transition will start about 310ps earlier. CKE must be active (High) during the entire time a refresh command is executed. That is, from the time the AUTO REFRESH command is registered, CKE must be active at each rising clock edge, until tREF later. Whenever the operating frequency is altered, not including jitter, the DLL is required to be reset. This is followed by 200 clock cycles (before READ commands). 3. VTT 50Ω Reference Reference Point Point 30pF 14. 15. 4. AC timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK#), and parameter specifications are guaranteed for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 1V/ns in the range between VIL(AC) and VIH(AC). The AC and DC input level specifications are defined in the SSTL_ 2 standard (i.e., the receiver will effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back above [below] the DC input LOW [high] level). Command/Address input slew rate = 0.5V/ns. For -75 with slew rates 1V/ns and faster, tIS and tIH are reduced to 900ps. If the slew rate is less than 0.5V/ns, timing must be derated: tIS has an additional 50ps per each 100mV/ns reduction in slew rate from the 500mV/ns. tIH has 0ps added, that is, it remains constant. If the slew rate exceeds 4.5V/ns, functionality is uncertain. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE ≤ 0.3 x VCCQ is recognized as LOW. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage level, but specify when the device output is no longer driving (HZ) and begins driving (LZ). The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but system performance (bus turnaround) will degrade accordingly. This is not a device limit. The device will operate with a negative value, but system performance could be degraded due to bus turnaround. It is recommended that DQS be valid (HIGH or LOW) on or before the WRITE command. The case shown (DQS going from High-Z to logic LOW) applies when no WRITEs were previously in progress on the bus. If a previous WRITE was in progress, DQS could be high during this time, depending on tDQSS. Output (VOUT) 16. 17. 5. 18. 19. 6. 7. 20. 21. 8. 22. 9. 10. 11. April 2005 Rev. 0 9 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs W3EG2128M64ETSR-JD3 ADVANCED DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7A IDD1 : OPERATING CURRENT : ONE BANK 1. 2. 3. Typical Case : VCC=2.5V, T=25°C Worst Case : VCC=2.7V, T=10°C Only one bank is accessed with tRC (min), Burst Mode, Address and Control inputs on NOP edge are changing once per clock cycle. IOUT = 0mA Timing Patterns : • DDR266 (133MHz, CL=2.5) : tCK=7.5ns, CL=2.5, BL=4, tRCD=3*tCK, tRC=9*tCK, tRAS=5*tCK Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst DDR333 (166MHz, CL=2.5) : tCK=6ns, BL=4, tRCD=10*tCK, tRAS=7*tCK Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst IDD7A : OPERATING CURRENT : FOUR BANKS 1. 2. 3. Typical Case : VCC=2.5V, T=25°C Worst Case : VCC=2.7V, T=10°C Four banks are being interleaved with tRC (min), Burst Mode, Address and Control inputs on NOP edge are not changing. Iout=0mA Timing Patterns : • DDR266 (133MHz, CL=2.5) : tCK=7.5ns, CL=2.5, BL=4, tRRD=3*tCK, tRCD=3*tCK Read with Autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing; 100% of data changing at every burst DDR333 (166MHz, CL=2.5) : tCK=6ns, BL=4, tRRD=3*tCK, tRCD=3*tCK, Read with Autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing; 100% of data changing at every burst 4. 4. • • Legend: A = Activate, R = Read, W = Write, P = Precharge, N = NOP A (0-3) = Activate Bank 0-3 R (0-3) = Read Bank 0-3 April 2005 Rev. 0 10 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs W3EG2128M64ETSR-JD3 ADVANCED PART NUMBERING GUIDE W 3 E G 2128M 64 E T S R xxx JD3 x G WEDC MEMORY DDR GOLD DEPTH (Dual Rank) BUS WIDTH x8 TSOP 2.5V REGISTERED SPEED (MHz) PACKAGE COMPONENT VENDOR NAME (M = MICRON) (S = SAMSUNG) RoHS COMPLIANT April 2005 Rev. 0 11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs W3EG2128M64ETSR-JD3 ADVANCED ORDERING INFORMATION FOR JD3 Part Number W3EG2128M64ETSR335JD3xG W3EG2128M64ETSR263JD3xG W3EG2128M64ETSR265JD3xG Speed 166MHz/333Mb/s 133MHz/266Mb/s 133MHz/266Mb/s CAS Latency 2.5 2 2.5 tRCD 3 3 3 tRP 3 3 3 Height* 30.48 (1.20") 30.48 (1.20") 30.48 (1.20") NOTES: • Consult Factory for availability of RoHS compliant products. (G = RoHS Compliant) • Vendor specific part numbers are used to provide memory components source control. The place holder for this is shown as lower case “x” in the part numbers above and is to be replaced with the respective vendors code. Consult factory for qualified sourcing options. (M = Micron, S = Samsung & consult factory for others) • Consult factory for availability of industrial temperature (-40°C to 85°C) option PACKAGE DIMENSIONS FOR JD3 133.48 (5.255" MAX.) 131.34 (5.171") 128.95 (5.077") 3.99 (0.157 (2x)) 3.99 (0.157) (MIN) 3.81 (0.150 MAX) 17.78 (0.700) 10.01 (0.394) 6.35 (0.250) 64.77 (2.550) 1.27 (0.050 TYP.) 30.48 (1.20 MAX) 6.35 (0.250) 1.78 (0.070) 49.53 (1.950) 2.31 (0.091) (2x) 3.00 (0.118) (4x) 1.27 ± 0.10 (0.050 ± 0.004) * ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES) April 2005 Rev. 0 12 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs Document Title 2GB – 2x128Mx64 DDR SDRAM REGISTERED w/PLL W3EG2128M64ETSR-JD3 ADVANCED Revision History Rev # Rev 0 History Created Release Date 4-05 Status Advanced April 2005 Rev. 0 13 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com