W3EG7217S265D3

White Electronic Designs W3EG7217S-D3 128MB - 16Mx72 DDR SDRAM REGISTERED, ECC w/PLL FEATURES Double-data-rate architecture DDR200 and DDR266 BI-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2, 2.5 (clock) Programmable Burst Length (2, 4, 8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input Auto and self refresh Serial presence detect Power supply: 2.5V ± 0.20V 184 pin DIMM package • D3 = 26.67 (1.05") Note: Consult factory for availability of lead-free products (F = Lead-Free, G = RoHS compliant) * This product is subject to change without notice. DESCRIPTION The W3EG7217S is a 16Mx72 Double Data Rate SDRAM memory module based on 128Mb DDR SDRAM component. The module consists of nine 16Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184 pin FR4 substrate. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and burst lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. OPERATING FREQUENCIES DDR266 @CL=2 Clock Speed CL-tRCD-tRP 133MHz 2-2-2 DDR266 @CL=2.5 133MHz 2.5-3-3 DDR200 @CL=2 100MHz 2-2-2 December 2004 Rev. 1 1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs W3EG7217S-D3 PIN CONFIGURATION PIN# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 SYMBOL VREF DQ0 VSS DQ1 DQS0 DQ2 VCC DQ3 NC RESET# VSS DQ8 DQ9 DQS1 VCCQ *CK1 *CK1# VSS DQ10 DQ11 CKE0 VCCQ DQ16 DQ17 DQS2 VSS A9 DQ18 A7 VCCQ DQ19 A5 DQ24 VSS DQ25 DQS3 A4 VCC DQ26 DQ27 A2 VSS A1 CB0 CB1 VCC PIN# 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 SYMBOL DQS8 A0 CB2 VSS CB3 BA1 DQ32 VCCQ DQ33 DQS4 DQ34 VSS BA0 DQ35 DQ40 VCCQ WE# DQ41 CAS# VSS DQS5 DQ42 DQ43 VCC *CS2# DQ48 DQ49 VSS *CK2# *CK2 VCCQ DQS6 DQ50 DQ51 VSS VCCID DQ56 DQ57 VCC DQS7 DQ58 DQ59 VSS NC SDA SCL PIN# 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 SYMBOL VSS DQ4 DQ5 VCCQ DQM0 DQ6 DQ7 VSS NC NC NC VCCQ DQ12 DQ13 DQM1 VCC DQ14 DQ15 CKE1* VCCQ *BA2 DQ20 A12 VSS DQ21 A11 DQM2 VCC DQ22 A8 DQ23 VSS A6 DQ28 DQ29 VCCQ DQM3 A3 DQ30 VSS DQ31 CB4 CB5 VCCQ CK0 CK0# PIN# 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 SYMBOL VSS DQM8 A10 CB6 VCCQ CB7 VSS DQ36 DQ37 VCC DQM4 DQ38 DQ39 VSS DQ44 RAS# DQ45 VCCQ CS0# CS1#* DQM5 VSS DQ46 DQ47 A13* VCCQ DQ52 DQ53 A13 VCC DQM6 DQ54 DQ55 VCCQ NC DQ60 DQ61 VSS DQS16 DQ62 DQ63 VCCQ SA0 SA1 SA2 VCCSPD A0-A12 BA0-BA1 DQ0-DQ63 CB0-CB7 DQS0-DQS8 CK0 CK0# CKE0 CS0# RAS# CAS# WE# DQM0-DQM8 VCC VCCQ VSS VREF VCCSPD SDA SCL SA0-SA2 VCCID NC RESET# PIN NAMES Address input (Multiplexed) Bank Select Address Data Input/Output Check bits Data Strobe Input/Output Clock Input Clock input Clock Enable input Chip Select Input Row Address Strobe Column Address Strobe Write Enable Data-In Mask Power Supply Power Supply for DQS Ground Power Supply for Reference Serial EEPROM Power Supply Serial data I/O Serial clock Address in EEPROM VCC Indentification Flag No Connect Reset Enable * Not Used December 2004 Rev. 1 2 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs FUNCTIONAL BLOCK DIAGRAM CS0# DQS0 DQM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DQM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DQM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DQM3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQS8 DQM8 CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 DM CS# DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 120 CK0 CK0# PLL DM CS# DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DM CS# DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS7 DQM7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 DM CS# DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DM CS# DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS6 DQM6 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DM CS# DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DM CS# DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS5 DQM5 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DM CS# DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS4 DQM4 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DM CS# DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 W3EG7217S-D3 DDR SDRAM DDR SDRAM DDR SDRAM DDR SDRAM DDR SDRAM DDR SDRAM DDR SDRAM DDR SDRAM DDR SDRAM REGISTER X 2 CS0# BA0, BA1 A0-A12 RAS# CAS# CKE0 WE# R E G I S T E R S SERIAL PD RCS0# RBA0, RBA1: DDR SDRAMS RA0-RA12: DDR SDRAMS RRAS#: DDR SDRAMS RCAS#: DDR SDRAMS RCKE0: DDR SDRAMS RWE#: DDR SDRAMS VCCSPD VCCQ VCC VREF RESET# VSS SPD SCL WP A0 A1 A2 SDA SA0 SA1 SA2 DDR SDRAMS DDR SDRAMS DDR SDRAMS DDR SDRAMS CK CK# NOTE: All resistor values are 22ohms unless otherwise specified. December 2004 Rev. 1 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Current Symbol VIN, VOUT VCC, VCCQ TSTG PD IOS Value -0.5 ~ 3.6 -1.0 ~ 3.6 -55 ~ +150 9 50 W3EG7217S-D3 Units V V °C W mA Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. DC CHARACTERISTICS TA = 0°C to 70°C, VCC = 2.5V ± 0.2V Parameter Supply Voltage Supply Voltage Reference Voltage Termination Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Symbol VCC VCCQ VREF VTT VIH VIL VOH VOL Min 2.3 2.3 1.15 1.15 VREF+0.15 -0.3 VTT+0.76 — Max 2.7 2.7 1.35 1.35 VCCQ+0.3 VREF+0.15 — VTT-0.76 Unit V V V V V V V V CAPACITANCE TA = 25°C, f = 1MHz, VCC = 2.5V Parameter Input Capacitance (A0-A12) Input Capacitance (RAS#,CAS#,WE#) Input Capacitance (CKE0) Input Capacitance (CK0#,CK0) Input Capacitance (CS0#) Input Capacitance (DQM0-DQM8) Input Capacitance (BA0-BA1) Data input/output capacitance (DQ0-DQ63)(DQS) Data input/output capacitance (CB0-CB7) Symbol CIN1 CIN2 CIN3 CIN4 CIN5 CIN6 CIN7 COUT COUT Max 6.25 6.25 6.25 5.5 6.25 8.0 6.25 8.0 8.0 Unit pF pF pF pF pF pF pF pF pF December 2004 Rev. 1 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs IDD SPECIFICATIONS AND TEST CONDITIONS 0°C ≤ TA ≤ 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V Includes PLL and Register Power DDR266@CL = 2 Max 1266 W3EG7217S-D3 Parameter Operating Current Symbol IDD0 Conditions One device bank; Active = Precharge; tRC = tRC(MIN); tCK = tCK(MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. One device bank; Active-Read-Precharge; Burst = 2; tRC = tRC(MIN);tCK = tCK (MIN); Iout = 0mA; Address and control inputs changing once per clock cycle. All device banks idle; Power- down mode; tCK = tCK(MIN); CKE = (low) CS# = High; All device banks idle; tCK = tCK(MIN); CKE = high; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ, DQS and DM. One device bank active; Power-down mode; tCK(MIN); CKE = (low) CS# = High; CKE = High; One device bank; ActivePrecharge; tRC = tRAS(MAX); tCK = tCK(MIN); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle. Burst = 2; Reads; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK = tCK(MIN); IOUT = 0mA. Burst = 2; Writes; Continous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK = tCK(MIN); DQ,DM and DQS inputs changing twice per clock cycle. tRC = tRC(MIN) CKE ≤ 0.2V Four bank interleaving Reads (BL = 4) with auto precharge with tRC = tRC (MIN); tCK = tCK(MIN); Address and control inputs change only during Active Read or Write commands. DDR266@CL = 2.5 Max 1221 DDR200@CL = 2 Max 1221 Units mA Operating Current IDD1 1356 1356 1356 mA Precharge PowerDown Standby Current dle Standby Current IDD2P IDD2F 27 750 27 705 27 705 mA mA Active Power-Down Standby Current Active Standby Current IDD3P IDD3N 225 795 180 750 180 750 mA mA Operating Current IDD4R 1446 1401 1401 mA Operating Current IDD4W 1401 1356 1356 mA Auto Refresh Current Self Refresh Current Operating Current IDD5 IDD6 IDD7A 2325 372 3246 2325 363 3201 2325 363 3201 mA mA mA December 2004 Rev. 1 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs IDD SPECIFICATIONS AND TEST CONDITIONS 0°C ≤ TA ≤ 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V Includes DDR SDRAM Component Only DDR266@CL = 2 Max 900 W3EG7217S-D3 Parameter Operating Current Symbol IDD0 Conditions One device bank; Active = Precharge; tRC = tRC(MIN); tCK = tCK(MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. One device bank; Active-Read-Precharge; Burst = 2; tRC = tRC(MIN);tCK = tCK (MIN); Iout = 0mA; Address and control inputs changing once per clock cycle. All device banks idle; Power- down mode; tCK = tCK(MIN); CKE = (low) CS# = High; All device banks idle; tCK = tCK(MIN); CKE = high; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ, DQS and DM. One device bank active; Power-down mode; tCK(MIN); CKE = (low) CS# = High; CKE = High; One device bank; ActivePrecharge; tRC = tRAS(MAX); tCK = tCK(MIN); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle. Burst = 2; Reads; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK = tCK(MIN); IOUT = 0mA. Burst = 2; Writes; Continous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK = tCK(MIN); DQ,DM and DQS inputs changing twice per clock cycle. tRC = tRC(MIN) CKE ≤ 0.2V Four bank interleaving Reads (BL = 4) with auto precharge with tRC = tRC (MIN); tCK = tCK(MIN); Address and control inputs change only during Active Read or Write commands. DDR266@CL = 2.5 Max 945 DDR200@CL = 2 Max 945 Units mA Operating Current IDD1 1080 1080 1080 mA Precharge PowerDown Standby Current dle Standby Current IDD2P IDD2F 27 405 27 360 27 360 mA mA Active Power-Down Standby Current Active Standby Current IDD3P IDD3N 225 450 180 405 180 405 mA mA Operating Current IDD4R 1170 1125 1125 mA Operating Current IDD4W 1125 1080 1080 mA Auto Refresh Current Self Refresh Current Operating Current IDD5 IDD6 IDD7A 1980 27 2970 1980 18 2925 1980 18 2925 mA mA mA December 2004 Rev. 1 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7A IDD1 : OPERATING CURRENT : ONE BANK 1. 2. 3. Typical Case : VCC=2.5V, T=25°C Worst Case : VCC=2.7V, T=10°C Only one bank is accessed with tRC (min), Burst Mode, Address and Control inputs on NOP edge are changing once per clock cycle. IOUT = 0mA Timing Patterns : • DDR200 (100 MHz, CL=2) : tCK=10ns, CL2, BL=4, tRCD=2*tCK, tRAS=5*tCK Read : A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst DDR266 (133MHz, CL=2.5) : tCK=7.5ns, CL=2.5, BL=4, tRCD=3*tCK, tRC=9*tCK, tRAS=5*tCK Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst DDR266 (133MHz, CL=2) : tCK=7.5ns, CL=2, BL=4, tRCD=3*tCK, tRC=9*tCK, tRAS=5*tCK Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst W3EG7217S-D3 IDD7A : OPERATING CURRENT : FOUR BANKS 1. 2. 3. Typical Case : VCC=2.5V, T=25°C Worst Case : VCC=2.7V, T=10°C Four banks are being interleaved with tRC (min), Burst Mode, Address and Control inputs on NOP edge are not changing. Iout=0mA Timing Patterns : • DDR200 (100 MHz, CL=2) : tCK=10ns, CL2, BL=4, tRRD=2*tCK, tRCD=3*tCK, Read with Autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 repeat the same timing with random address changing; 100% of data changing at every burst DDR266 (133MHz, CL=2.5) : tCK=7.5ns, CL=2.5, BL=4, tRRD=3*tCK, tRCD=3*tCK Read with Autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing; 100% of data changing at every burst DDR266 (133MHz, CL=2) : tCK=7.5ns, CL2=2, BL=4, tRRD=2*tCK, tRCD=2*tCK Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing; 100% of data changing at every burst 4. 4. • • • • Legend: A = Activate, R = Read, W = Write, P = Precharge, N = NOP A (0-3) = Activate Bank 0-3 R (0-3) = Read Bank 0-3 December 2004 Rev. 1 7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs W3EG7217S-D3 DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS 0°C ≤ TA ≤ +70°C; VCC = +2.5V ±0.2V, VCCQ = +2.5V ±0.2V AC Characteristics Parameter Access window of DQs from CK, CK# CK high-level width CK low-level width Clock cycle time CL=2.5 CL=2 DQ and DM input hold time relative to DQS DQ and DM input setup time relative to DQS DQ and DM input pulse width (for each input) Access window of DQS from CK, CK# DQS input high pulse width DQS input low pulse width DQS-DQ skew, DQS to last DQ valid, per group, per access Write command to first DQS latching transition DQS falling edge to CK rising - setup time DQS falling edge from CK rising - hold time Half clock period Data-out high-impedance window from CK, CK# Data-out low-impedance window from CK, CK# Address and control input hold time (fast slew rate) Address and control input set-up time (fast slew rate) Address and control input hold time (slow slew rate) Address and control input setup time (slow slew rate) Address and control input pulse width (for each input) LOAD MODE REGISTER command cycle time DQ-DQS hold, DQS to first DQ to go non-valid, per access Data hold skew factor ACTIVE to PRECHARGE command ACTIVE to READ with Auto precharge command ACTIVE to ACTIVE/AUTO REFRESH command period AUTO REFRESH command period Symbol tAC tCH tCL tCK (2.5) tCK (2) tDH tDS tDIPW tDQSCK tDQSH tDQSL tDQSQ tDQSS tDSS tDSH tHP tHZ tLZ tIHf tISf tIHs tISs tIPW tMRD tQH tQHS tRAS tRAP tRC tRFC 40 15 60 75 -0.75 0.90 0.90 1 1 2.2 15 tHP-tQHS 0.75 120,000 40 20 70 80 0.75 0.2 0.2 tCH, tCL +0.75 -0.8 1.1 1.1 1.1 1.1 2.2 16 tHP-tQHS 1 120,000 Min -0.75 0.45 0.45 7.5 7.5/10 0.5 0.5 1.75 -0.75 0.35 0.35 0.5 1.25 0.75 0.2 0.2 tCH, tCL +0.8 +0.75 262/265 Max +0.75 0.55 0.55 13 13 Min -0.8 0.45 0.45 8 10 0.6 0.6 2 -0.8 0.35 0.35 0.6 1.25 +0.8 202 Max +0.8 0.55 0.55 13 13 Units ns tCK tCK ns ns ns ns ns ns tCK tCK ns tCK tCK tCK ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 21 15 13,14 18 8,19 8,20 6 6 6 6 13,14 16 16 22 22 14,17 14,17 17 Notes December 2004 Rev. 1 8 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs W3EG7217S-D3 DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (continued) 0°C ≤ TA ≤ +70°C; VCC = +2.5V ±0.2V, VCCQ = +2.5V ±0.2V AC Characteristics Parameter ACTIVE to READ or WRITE delay PRECHARGE command period DQS read preamble DQS read postamble ACTIVE bank a to ACTIVE bank b command DQS write preamble DQS write preamble setup time DQS write postamble Write recovery time Internal WRITE to READ command delay Data valid output window REFRESH to REFRESH command interval Average periodic refresh interval Terminating voltage delay to VCC Exit SELF REFRESH to non-READ command Exit SELF REFRESH to READ command Symbol tRCD tRP tRPRE tRPST tRRD tWPRE tWPRES tWPST tWR tWTR NA tREFC tREFI tVTD tXSNR tXSRD 0 75 200 Min 15 15 0.9 0.4 12 0.25 0 0.4 15 1 tQH-tDQSQ 140.6 15.6 0 80 200 0.6 1.1 0.6 262/265 Max Min 20 20 0.9 0.4 15 0.25 0 0.4 15 1 tQH-tDQSQ 140.6 15.6 0.6 1.1 0.6 202 Max Units ns ns tCK tCK ns tCK ns tCK ns tCK ns μs μs ns ns tCK 13 12 12 10,11 9 19 Notes December 2004 Rev. 1 9 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs Notes 1. 2. All voltages referenced to VSS Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at normal reference / supply voltage levels, but the related specifications and device operations are guaranteed for the full voltage range specified. Outputs are measured with equivalent load: 12. 11. W3EG7217S-D3 It is recommended that DQS be valid (HIGH or LOW) on or before the WRITE command. The case shown (DQS going from High-Z to logic LOW) applies when no WRITEs were previously in progress on the bus. If a previous WRITE was in progress, DQS could be high during this time, depending on tDQSS. The refresh period is 64ms. This equates to an average refresh rate of 15.625µs. However, an AUTO REFRESH command must be asserted at least once every 140.6µs; burst refreshing or posting by the DRAM controller greater than eight refresh cycles is not allowed. The valid data window is derived by achieving other specifications - tHP (tCK/2), tDQSQ, and tQH (tQH = tHP - tQHS). The data valid window derates directly proportional with the clock duty cycle and a practical data valid window can be derived. The clock is allowed a maximum duty cycled variation of 45/55. Functionality is uncertain when operating beyond a 45/55 ratio. The data valid window derating curves are provided below for duty cycles ranging between 50/50 and 45/55. Referenced to each output group: x8 = DQS with DQ0-DQ7. READs and WRITEs with auto precharge are not allowed to be issued until tRAS (MIN) can be satisfied prior to the internal precharge command being issued. JEDEC specifies CK and CK# input slew rate must be > 1V/ns (2V/ns differentially). DQ and DM input slew rates must not deviate from DQS by more than 10%. If the DQ/DM/DQS slew rate is less than 0.5V/ns, timing must be derated: 50ps must be added to tDS and tDH for each 100mV/ns reduction in slew rate. If slew rates exceed 4V/ns, functionality is uncertain. tHP min is the lesser of tCL min and tCH min actually applied to the device CK and CK# inputs, collectively during bank active. tHZ (MAX) will prevail over the tDQSCK (MAX) + tRPST (MAX) condition. tLZ (MIN) will prevail over tDQSCK (MIN) + PRE (MAX) condition. For slew rates greater than 1V/ns the (LZ) transition will start about 310ps earlier. CKE must be active (High) during the entire time a refresh command is executed. That is, from the time the AUTO REFRESH command is registered, CKE must be active at each rising clock edge, until tRFC has been satisfied. Whenever the operating frequency is altered, not including jitter, the DLL is required to be reset. This is followed by 200 clock cycles (before READ commands). 3. VTT 50Ω Reference Reference Point Point 30pF Output Output (VOUT) 13. 4. AC timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK#), and parameter specifications are guaranteed for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 1V/ns in the range between VIL(AC) and VIH(AC). The AC and DC input level specifications are defined in the SSTL_ 2 standard (i.e., the receiver will effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back above [below] the DC input LOW [high] level). For slew rates less than 1V/ns and greater than or equal to 0.5V/ ns. If the slew rate is less than 0.5V/ns, timing must be derated: tIS has an additional 50ps per each 100mV/ns reduction in slew rate from the 500mV/ns. tIH has 0ps added, that is, it remains constant. If the slew rate exceeds 4.5V/ns, functionality is uncertain. For 266, slew rates must be greater than or equal to 0.5V/ns. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE ≤ 0.3 x VCCQ is recognized as LOW. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage level, but specify when the device output is no longer driving (HZ) and begins driving (LZ). The intent of the “Don’t Care” state after completion of the postamble is the DQS-driven signal should either be HIGH, LOW, or high-Z, and that any signal transition within the input switching region must follow valid input requirements. That is, if DQS transitions HIGH (above VIHDC (MIN) then it must not transition LOW (below VIHDC) prior to tDQSH (MIN). This is not a device limit. The device will operate with a negative value, but system performance could be degraded due to bus turnaround. 14. 15. 5. 16. 17. 6. 18. 19. 7. 8. 20. 21. 9. 22. 10. December 2004 Rev. 1 10 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs ORDER INFORMATION FOR D3 Part Number W3EG7217S262D3 W3EG7217S265D3 W3EG7217S202D3 Speed 133MHz/266Mbps 133MHz/266Mbps 100MHz/200Mbps CAS Latency 2 2.5 2 tRCD 2 3 2 tRP 2 3 2 W3EG7217S-D3 Height* 26.67 (1.05") 26.67 (1.05") 26.67 (1.05") Note: Consult factory for availability of lead-free products (F = Lead-Free, G = RoHS compliant) PACKAGE DIMENSIONS FOR D3 3.99 (0.157) (4X) 133.48 (5.255) MAX 4.06 (0.160) MAX 26.67 (1.050) MAX 3.99 (0.157) MAX 17.78 (0.700) 1.27 (0.050) TYP 49.53 (1.950) 10.01 (0.394) 6.35 (0.250) 64.77 (2.550) 6.35 (0.250) 1.78 (0.070) 3.00 (0.118) (4X) 1.27 ± 0.10 (0.050 ± 0.004) * ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES). December 2004 Rev. 1 11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs Document Title 128MB – 16Mx72 DDR SDRAM REGISTERED W3EG7217S-D3 Revision History Rev # Rev A Rev 0 History Created 0.1 Updated IDD and CAP specs 0.2 Added AC Specs 0.3 Moved from Advanced to Preliminary Release Date 5-22-02 11-04 Status Advanced Preliminary Rev 1 1.0 Added lead-free and RoHS notes 1.1 Moved from Preliminary to Final 12-04 Final December 2004 Rev. 1 12 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com