White Electronic Designs
1Mx36 Synchronous Pipeline Burst NBL SRAM
FEATURES
Fast clock speed: 166, 150, 133, and 100MHz Fast access times: 3.5ns, 3.8ns, 4.2ns, and 5.0ns Fast OE# access times: 3.5ns, 3.8ns, 4.2ns, and 5.0ns Single +3.3V ± 5% power supply (VCC) Snooze Mode for reduced-standby power Individual Byte Write control Clock-controlled and registered addresses, data I/Os and control signals Burst control (interleaved or linear burst) Packaging: • 119-bump BGA package Low capacitive bus loading
This product is subject to change without notice.
WED2ZL361MV
DESCRIPTION
The WEDC SyncBurst — SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through registers controlled by a positive-edge-triggered single-clock input (CLK). The NBL or No Bus Latency Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied “High or Low.” Asynchronous inputs include the sleep mode enable (ZZ). Output Enable controls the outputs at any given time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-chip write pulse generation and provides increased timing flexibility for incoming signals.
FIGURE 1 – PIN CONFIGURATION
(Top View) 1 VCC SA NC DQC DQC VCC DQC DQC VCC DQD DQD VCC DQD DQD NC NC VCC 2 SA CE2 SA DQPC DQC DQC DQC DQC VCC DQD DQD DQD DQD DQPD SA NC NC 3 SA SA SA VSS VSS VSS BWC# VSS NC VSS BWD# VSS VSS VSS LBO SA NC 4 SA ADV# VCC NC CE1# OE# SA WE# VCC CLK NC CKE# SA1 SA0 VCC SA NC 5 SA SA SA VSS VSS VSS BWB# VSS NC VSS BWA# VSS VSS VSS NC SA NC 6 SA CE2# SA DQPB DQB DQB DQB DQB VCC DQA DQA DQA DQA DQPA SA NC NC 7 VCC NC NC DQB DQB VCC DQB DQB VCC DQA DQA VCC DQA DQA NC ZZ VCC
Block Diagram
BWc# BWd# BWb# BWa#
A B C D E F G H J K L M N P R T U
1M x 18
CLK CKE# ADV# LBO# CE1# CE2 CE2# OE# WE# ZZ CLK CKE# ADV# LBO# CS1# CS2 CS2# OE# WE# ZZ CLK CKE# ADV# LBO# CS1# CS2 CS2# OE# WE# ZZ
1M x 18
Address Bus (SA0 - SA19)
DQc, DQd DQPc, DQPd
DQa, DQb DQPa, DQPb
DQa - DQd DQPa - DQPd
June 2004 Rev. 3
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FUNCTION DESCRIPTION
The WED2ZL361MV is an NBL SSRAM designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from Read to Write, or vice versa. All inputs (with the exception of OE#, LBO and ZZ) are synchronized to rising clock edges. All read, write and deselect cycles are initiated by the ADV# input. Subsequent burst addresses can be internally generated by the burst advance pin (ADV#). ADV# should be driven to Low once the device has been deselected in order to load a new address for next operation. Clock Enable (CKE) pin allows the operation of the chip to be suspended as long as necessary. When CKE is high, all synchronous inputs are ignored and the internal device registers will hold their previous values. NBL SSRAM latches external address and initiates a cycle when CKE and ADV are driven low at the rising edge of the clock. Output Enable (OE) can be used to disable the output at any given time. Read operation is initiated when at the rising edge of the clock, the address presented to the address inputs are latched in the address register, CKE is driven low, the write enable input signals WE# are driven high, and ADV# driven low. The internal array is read between the first rising edge and the second rising edge of the clock and the data is latched in the output register. At the second clock edge the data is driven out of the SRAM. During read operation OE# must be driven low for the device to drive out the requested data.
WED2ZL361MV
Write operation occurs when WE# is driven low at the rising edge of the clock. BW#[d:a] can be used for byte write operation. The pipe-lined NBL SSRAM uses a late-late write cycle to utilize 100% of the bandwidth. At the first rising edge of the clock, WE# and address are registered, and the data associated with that address is required two cycle later. Subsequent addresses are generated by ADV High for the burst access as shown below. The starting point of the burst seguence is provided by the external address. The burst address counter wraps around to its initial state upon completion. The burst sequence is determined by the state of the LBO pin. When this pin is low, linear burst sequence is selected. And when this pin is high, Interleaved burst sequence is selected. During normal operation, ZZ must be driven low. When ZZ is driven high, the SRAM will enter a Power Sleep Mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates after 2 cycles of wake up time.
BURST SEQUENCE TABLE
(Interleaved Burst, LBO = High) Case 1 LBO Pin First Address High A1 0 0 1 Fourth Address 1 A0 0 1 0 1 Case 2 A1 0 0 1 1 A0 1 0 1 0 Case 3 A1 1 1 0 0 A0 0 1 0 1 Case 4 A1 1 1 0 0 A0 1 0 1 0 Fourth Address LBO Pin First Address High (Linear Burst, LBO = Low) Case 1 A1 0 0 1 1 A0 0 1 0 1 Case 2 A1 0 1 1 0 A0 1 0 1 0 Case 3 A1 1 1 0 0 A0 0 1 0 1 Case 4 A1 1 0 0 1 A0 1 0 1 0
NOTE 1: LBO pin must be tied to High or Low, and Floating State must not be allowed.
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TRUTH TABLES Synchronous Truth Table
CEx# H X L X L X L X L X X ADV# L H L H L H L H L H X WE# X X H X H X L X L X X BWx# X X X X X X L L H H X OE# X X L L H H X X X X X CKE# L L L L L L L L L L H CLK ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ Address Accessed N/A N/A External Address Next Address External Address Next Address External Address Next Address N/A Next Address Current Address
WED2ZL361MV
Operation Deselect Continue Deselect Begin Burst Read Cycle Continue Burst Read Cycle NOP/Dummy Read Dummy Read Begin Burst Write Cycle Continue Burst Write Cycle NOP/Write Abort Write Abort Ignore Clock
NOTES: 1. X means “Don’t Care.” 2. The rising edge of clock is symbolized by ( ↑ ) 3. A continue deselect cycle can only be entered if a deselect cycle is executed first. 4. WRITE# = L means Write operation in WRITE TRUTH TABLE. WRITE# = H means Read operation in WRITE TRUTH TABLE. 5. Operation finally depends on status of asynchronous input pins (ZZ and OE#). 6. CEx# refers to the combination of CE1#, CE2# and CE2#.
Write Truth Table
WE# H L L L L L L BWa# X L H H H L H BWb# X H L H H L H BWc# X H H L H L H BWd# X H H H L L H Operation Read Write Byte a Write Byte b Write Byte c Write Byte d Write All Bytes Write Abort/NOP
NOTES: 1. X means “Don’t Care.” 2. All inputs in this table must meet setup and hold time around the rising edge of CLK ( ↑ ).
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Absolute Maximum Ratings*
Voltage on VCC Supply Relative to VSS VIN (DQx) VIN (Inputs) Storage Temperature (BGA) Short Circuit Output Current
WED2ZL361MV
-0.3V to +4.6V -0.3V to +4.6V -0.3V to +4.6V -65°C to +150°C 100mA
* Stress greater than those listed under “Absolute Maximum Ratings: may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating condtions for extended periods may affect reliability.
Recommended DC Operating Conditions Voltage Referenced to:
VSS = 0V, = 0°C ≤ TA ≤ +70°C; Commercial or -40°C ≤ TA ≤ +85°C; Industrial Description Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Supply Voltage Symbol VIH VIL ILI ILO VOH VOL VCC Conditions Min 2.0 -0.3 -5 -5 2.4 – 3.135 Max VCC +0.5 0.8 5 5 – 0.4 3.465 Units V V µA µA V V V Notes 1 1 2 1 1 1
0V ≤ VIN ≤ VCC Output(s) Disabled, 0V ≤ VIN ≤ VCC IOH = -4.0mA IOL = 8.0mA
NOTES: 1. All voltages referenced to VSS (GND) 2. ZZ pin has an internal pull-up, and input leakage = ± 10µA.
DC Characteristics
166 Description Power Supply Current: Operating Power Supply Current: Standby Power Supply Current: Current Clock Running Standby Current Symbol Conditions Device Selected; All Inputs ≤ VIL or ≥ VIH; Cycle Time = IDD TCYC MIN; VCC = MAX; Output Open ISB2 Device Deselected; VCC = MAX; All Inputs ≤ VSS + 0.2 or VCC - 0.2; All Inputs Static; CLK Frequency = 0; ZZ ≤ VIL ISB3 Device Selected; All Inputs ≤ VIL or ≥ VIH; Cycle Time = TCYC MIN; VCC = MAX; Output Open; ZZ ≥ VCC - 0.2V ISB4 Device Deselected; VCC = MAX; All Inputs ≤ VSS + 0.2 or VCC - 0.2; Cycle Time = TCYC MIN; ZZ ≤ VIL Typ MHz 840 60 60 240 150 MHz 800 60 60 220 133 MHz 760 60 60 180 100 MHz 640 60 60 160 Units mA mA mA mA Notes 1, 2 2 2 2
30 30
NOTES: 1. IDD is specified with no output current and increases with faster cycle times. IDD increases with faster cycle times and greater output loading. 2. Typical values are measured at 3.3V, 25°C, and 10ns cycle time.
BGA Capacitance
Description Control Input Capacitance Input/Output Capacitance (DQ) Address Capacitance Clock Capacitance
NOTES: 1. This parameter is sampled. June 2004 Rev. 3
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Symbol CI CO CA CCK
Conditions TA = 25°C; f = 1MHz TA = 25°C; f = 1MHz TA = 25°C; f = 1MHz TA = 25°C; f = 1MHz
Typ 5 6 5 3
Max 7 8 7 5
Units pF pF pF pF
Notes 1 1 1 1
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AC Characteristics
Parameter Clock Time Clock Access Time Output enable to Data Valid Clock High to Output Low-Z Output Hold from Clock High Output Enable Low to output Low-Z Output Enable High to Output High-Z Clock High to Output High-Z Clock High Pulse Width Clock Low Pulse Width Address Setup to Clock High CKE Setup to Clock High Data Setup to Clock High Write Setup to Clock High Address Advance to Clock High Chip Select Setup to Clock High Address Hold to Clock high CKE Hold to Clock High Data Hold to Clock High Write Hold to Clock High Address Advance to Clock High Chip Select Hold to Clock High Symbol TCYC tCD tOE tLZC tOH tLZOE tHZOE tHZC tCH tCL tAS tCES tDS tWS tADVS tCSS tAH tCEH tDH tWH tADVH tCSH 166MHz Min Max 6.0 — 3.5 — 3.5 1.5 — 1.5 — 0.0 — — 3.0 — 3.0 2.2 — 2.2 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — 150MHz Min Max 6.7 — 3.8 — 3.8 1.5 — 1.5 — 0.0 — — 3.0 — 3.0 2.5 — 2.5 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — 0.5 —
WED2ZL361MV
133MHz Min Max 7.5 — 4.2 — 4.2 1.5 — 1.5 — 0.0 — — 3.5 — 3.5 3.0 — 3.0 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — 0.5 —
100MHz Min Max 10.0 — 5.0 — 5.0 1.5 — 1.5 — 0.0 — — 3.5 — 3.5 3.0 — 3.0 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — 0.5 —
Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
NOTES: 1. All Address inputs must meet the specified setup and hold times for all rising clock (CLK) edges when ADV# is sampled low and CEx# is sampled valid. All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
2. Chip enable must be valid at each rising edge of CLK (when ADV# is Low) to remain enabled. 3. A write cycle is defined by WE# low having been registered into the device at ADV Low. A Read cycle is defined by WE# High with ADV# Low. Both cases must meet setup and hold times.
AC Test Conditions
VSS = 0V, = 0°C ≤ TA ≤ +70°C, VCC = 3.3V ± 5%; Commercial or -40°C ≤ TA ≤ +85°C, VCC = 3.3V ± 5%; Industrial Parameter Input Pulse Level Input Rise and Fall Time (Measured at 20% to 80%) Input and Output Timing Reference Levels Output Load Value 0 to 3.0V 1.0V/ns 1.5V See Output Load (A)
Output Load (A)
DOUT Zo=50Ω RL=50Ω 30pF* VL=1.5V
Output Load (B)
for a tLZC, tLZOE, tHZOE, and tHZC
+3.3V DOUT 353 Ω 3.9 Ω
5pF*
*Including Scope and Jig Capacitance
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SNOOZE MODE
SNOOZE MODE is a low-current, “power-down” mode in which the device is deselected and current is reduced to ISB2Z. The duration of SNOOZE MODE is dictated by the length of time Z is in a HIGH state. After the device enters SNOOZE MODE, all inputs except ZZ become gated inputs and are ignored. ZZ is an asynchronous, active HIGH input that causes the device to enter SNOOZE MODE.
WED2ZL361MV
When ZZ becomes a logic HIGH, ISB2Z is guaranteed after the setup time tZZ is met. Any READ or WRITE operation pending when the device enters SNOOZE MODE is not guaranteed to complete successfully. Therefore, SNOOZE MODE must not be initiated until valid pending operations are completed.
SNOOZE MODE
Description Current during SNOOZE MODE ZZ active to input ignored ZZ inactive to input sampled ZZ active to snooze current ZZ inactive to exit snooze current Conditions ZZ ≥ VIH SYMBOL ISB2Z tZZ tRZZ tZZI tRZZI Min Max 10 2(tKC) 2(tKC) Units mA ns ns ns ns Notes 1 1 1 1
2(tKC)
FIGURE 2 – SNOOZE MODE TIMING DIAGRAM
CLOCK
t ZZ
ZZ
t RZZ
t ZZI
ISUPPLY
t RZZI
I ISB2Z
ALL INPUTS (except ZZ)
DESELECT or READ Only
Output (Q)
HIGH-Z
DON'T CARE
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FIGURE 3 – TIMING WAVEFORM OF READ CYCLE
tCH tCL
WED2ZL361MV
Clock
tAS tAH A1 A2 A3
Address
tWS
tWH
WRITE#
tCSS
tCSH
CEx#
tADVS tADVH
ADV
OE#
tOE tLZOE tHZOE Q1-1 tCD tOH Q2-1 Q2-2 Q2-3 Q2-4 Q3-1 Q3-2 Q3-3 tHZC Q3-4
Data Out
NOTES:
WRITE = L means WE = L, and BWx = L CEx# refers to the combination of CE1#, CE2 and CE2#.
Don't Care Undefined
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FIGURE 4 – TIMING WAVEFORM OF WRITE CYCLE
WED2ZL361MV
tCH
tCL
Clock
Address
A1
A2
A3
WRITE#
CEx#
ADV
OE#
tDS tDH D3-2 D3-3 D3-4
Data In
tHZOE
D1-1
D2-1
D2-2
D2-3
D2-4
D3-1
Data Out
Q0-3
Q0-4
NOTES:
WRITE# = L means WE# = L, and BWx = L CEx# refers to the combination of CE1#, CE2 and CE2#.
Don't Care Undefined
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WED2ZL361MV
FIGURE 5 – TIMING WAVEFORM OF SINGLE READ/WRITE
tCH
tCL
Clock
Address
A1
A2
A3
A4
A5
A6
A7
A8
A9
WRITE#
CEx#
ADV
OE#
tOE tLZOE
Data Out
Q1 tDS tDH D2
Q3
Q4
Q6
Q7
Data In
D5
Don't Care
NOTES:
WRITE = L means WE = L, and BWx = L CEx# refers to the combination of CE1#, CE2 and CE2#.
Undefined
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WED2ZL361MV
FIGURE 6 – TIMING WAVEFORM OF CKE# OPERATION
tCH
tCL
Clock
tCES tCEH tCYC
CKE
Address
A1
A2
A3
A4
A5
A6
WRITE#
CEx#
ADV
OE#
tCD tLZC tHZC Q1 tDS tDH D2 Q3 Q4
Data Out
Data In
NOTES:
WRITE# = L means WE = L, and BWx = L CEx# refers to the combination of CE1#, CE2 and CE2#.
Don't Care Undefined
June 2004 Rev. 3
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WED2ZL361MV
FIGURE 7 – TIMING WAVEFORM OF CE# OPERATION
tCH
tCL
Clock
tCYC
Address
A1
A2
A3
A4
A5
WRITE#
CEx#
ADV
OE#
tOE tLZOE tHZC Q1 Q2 tDS tDH tCD tLZC Q4
Data Out
Data In
D3
D5
NOTES:
WRITE# = L means WE = L, and BWx# = L CEx# refers to the combination of CE1#, CE2 and CE2#.
Don't Care Undefined
June 2004 Rev. 3
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PACKAGE DIMENSION: 119 BUMP PBGA
1.90 (0.075) MAX
WED2ZL361MV
7.62 (0.300) TYP
A B C D E F G
17.00 (0.669) TYP
A1 CORNER
1.27 (0.050) TYP 23.00 (0.905) TYP
20.32 (0.800) TYP
H J K L M N P R T U
1.27 (0.050) TYP
0.711 (0.028) MAX
NOTE: Ball attach pad for above BGA package is 620 microns in diameter. Pad is solder mask defined. ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
ORDERING INFORMATION Commercial Temp Range (0°C to 70°C)
Part Number WED2ZL361MV35BC WED2ZL361MV38BC WED2ZL361MV42BC WED2ZL361MV50BC Configuration 1M x 36 1M x 36 1M x 36 1M x 36 tCD (ns) 3.5 3.8 4.2 5.0 Clock (MHz) 166 150 133 100
Industrial Temp Range (-40°C to +85°C)
Part Number WED2ZL361MV35BI WED2ZL361MV38BI WED2ZL361MV42BI WED2ZL361MV50BI Configuration 1M x 36 1M x 36 1M x 36 1M x 36 tCD (ns) 3.5 3.8 4.2 5.0 Clock (MHz) 166 150 133 100
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