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WED416S16030C10SI

WED416S16030C10SI

  • 厂商:

    WEDC

  • 封装:

  • 描述:

    WED416S16030C10SI - 4M x 16 Bits x 4 Banks Synchronous DRAM - White Electronic Designs Corporation

  • 数据手册
  • 价格&库存
WED416S16030C10SI 数据手册
White Electronic Designs 4M x 16 Bits x 4 Banks Synchronous DRAM FEATURES Single 3.3V power supply Fully Synchronous to positive Clock Edge Clock Frequency = 133, 125, and 100MHZ SDRAM CAS Latency = 2 Burst Operation • Sequential or Interleave • Burst length = programmable 1,2,4,8 or full page • Burst Read and Write • Multiple Burst Read and Single Write DATA Mask Control per byte Auto Refresh (CBR) and Self Refresh • 8192 refresh cycles across 64ms Automatic and Controlled Precharge Commands Suspend Mode and Power Down Mode Industrial Temperature Range WED416S16030A DESCRIPTION The WED416S16030A is 268,435,456 bits of synchronous high data rate DRAM organized as 4 x 4,196,304 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Available in a 54 pin TSOP type II package the WED416S16030A is tested over the industrial temp range (-40°C to +85°C) providing a solution for rugged main memory applications. *This product is subject to change without notice. PIN CONFIGURATION Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 April 2006 Rev. 1 PIN DESCRIPTION A0-12 BA0, BA1 CE# WE# CK CKE DQ0-15 L(U)DQM RAS# CAS# VDD VDDQ VSS VSSQ NC Address Inputs Bank Select Addresses Chip Select Write Enable Clock Input Clock Enable Data Input/Output Data Input/Output Mask Row Address Strobe Column Address Strobe Power (3.3V) Data Output Power Ground Data Output Ground No Connection Front VCC DQ0 VCCQ DQ1 DQ2 VSSQ DQ3 DQ4 VCCQ DQ5 DQ6 VSSQ DQ7 VCC LDQM WE# CAS# RAS# Pin 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Front CE# BA0 BA1 A10/AP A0 A1 A2 A3 VCC VSS A4 A5 A6 A7 A8 A9 A11 A12 Pin 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 Front CKE CK UDQM NC/RFU VSS DQ8 VCCQ DQ9 DQ10 VSSQ DQ11 DQ12 VCCQ DQ13 DQ14 VSSQ DQ15 VSS 1 White Electronic Designs Corp. reserves the right to change products or specifications without notice. White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs INPUT/OUTPUT FUNCTIONAL DESCRIPTION Symbol CK CKE CE# RAS#, CAS# WE# BA0,BA1 Type Input Input Input Input Input Signal Pulse Level Pulse Pulse Level WED416S16030A A0-12, A10/AP Input Level DQ0-15 L(U)DQM VCC, VSS VCCQ, VSSQ Input/Output Input Supply Supply Level Pulse Polarity Function Positive Edge The system clock input. All of the SDRAM inputs are sampled on the rising edge of the clock. Activates the CK signal when high and deactivates the CK signal when low. By deactivating the Active High clock, CKE low initiates the Power Down mode, Suspend mode, or the Self Refresh mode. CE# disable or enable device operation by masking or enabling all inputs except CK, CKE and Active Low DQM. When sampled at the positive rising edge of the clock, CAS#, RAS#, and WE# define the operation Active Low to be executed by the SDRAM. — Selects which SDRAM bank is to be active. During a Bank Activate command cycle, A0-12 defines the row address (RA0-12) when sampled at the rising clock edge. During a Read or Write command cycle, A0-8 defines the column address (CA0-8) when sampled at the rising clock edge. In addition to the row address, A10/AP is used to invoke Autoprecharge operation at the end of the Burst Read or Write cycle. If A10/AP is high, autoprecharge is selected — and BA0, BA1 defines the bank to be precharged . If A10/AP is low, autoprecharge is disabled. During a Precharge command cycle, A10/AP is used in conjunction with BA0, BA1 to control which bank(s) to precharge. If A10/AP is high, all banks will be precharged regardless of the state of BA0, BA1. If A10/AP is low, then BA0, BA1 is used to define which bank to precharge. — Data Input/Output are multiplexed on the same pins The Data Input/Output mask places the DQ buffers in a high impedance state when sampled high. Mask In Read mode, DQM has a latency of two clock cycles and controls the output buffers like an output Active High enable. In Write mode, DQM has a latency of zero and operates as a word mask by allowing input data to be written if it is low but blocks the Write operation if DQM is high. Power and ground for the input buffers and the core logic. Isolated power and ground for the output buffers to improve noise immunity. White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 2 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs ABSOLUTE MAXIMUM RATINGS Parameter Symbol Power Supply Voltage VDD Input Voltage VIN Output Voltage VOUT Operating Temperature tOPR Storage Temperature tSTG Power Dissipation PD Short Circuit Output Current IOS Min -1.0 -1.0 -1.0 -40 -55 Max Units +4.6 V +4.6 V +4.6 V +85 °C +125 °C 1.0 W 50 mA WED416S16030A RECOMMENDED DC OPERATING CONDITIONS (Voltage Referenced to: VSS = 0V, 40°C ≤ Ta ≤ 85°C) Parameter Supply Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Voltage Output Leakage Voltage Symbol VCC VIH VIL VOH VOL IIL IOL Min 3.0 2.0 -0.3 2.4 — -5 -5 Typ 3.3 3.0 — — — — — Max 3.6 VCC +0.3 0.8 — 0.4 5 5 Unit V V V V V µA µA (IOH = -4mA) (IOL = 4mA) Notes *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE (TA = 25°C, f = 1MHZ, VCC = 3.3V TO 3.6V) Parameter Input Capacitance (A0-12, BA0-1) Input Capacitance (CK, CKE, RAS#, CAS#, WE#, CE#, L(U)DQM ) Input/Output Capacitance (DQ0-15) Symbol CI1 CI2 COUT Max 4 4 6.5 Unit pF pF pF OPERATING CURRENT CHARACTERISTICS (VCC = 3.3V, -40°C ≤ Ta ≤ +85°C) Parameter/Condition Operating Current Active Mode; Burst = 2; READ or WRITE tRC = tRC(MIN) Standby Current Power-Down Mode; All banks idle; CKE = LOW Standby Current: Active Mode; CKE = HIGH; CS# = HIGH; All banks active after tRCD met; No accesses in progress Operating Current: Burst Mode; Page burst: READ or WRITE; All banks active Auto Refresh Current CS# = HIGH: CKE = HIGH Self Refresh Current: CKE ≤ 0.2V NOTES: 1. Measured with outputs open. 2. Refresh period is 64ms. Symbol ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 ICC7 ICC7 All Speeds 135 2 40 135 285 3.5 2.5 1.5 Units mA mA mA mA mA mA mA mA Notes 3, 18, 19, 32 32 3, 12, 19, 32 3, 18, 19, 32 3, 12, 18, 19, 32, 33 4 tRFC = tRFC(MIN) tRFC = 7.81 µs Standard Low Power (L) White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs AC CHARACTERISTICS OPERATING AC PARAMETERS (Vcc = 3.3V, -40°C ≤ Ta ≤ +85°C) Parameter Clock Cycle Time CAS latency = 3 CAS latency = 2 Symbol tCK tAC tOH tCH tCL tCMS tCMH tLZ tHZ tRRD tRCD tRP tRAS tRC tCDL tRDL tBDL tCCD 7 7.5 7.5 5.4 3 2.5 2.5 1.5 0.8 1 5.4 15 20 20 45 65 1 2 1 1 2 1 1.5 0.8 75 7.5 8 6 3 2.5 2.5 1.5 0.8 1 6 15 20 20 45 65 1 2 1 1 2 1 1.5 0.8 8 8 10 6 3 3 3 2 1 1 6 20 20 20 50 70 1 2 1 1 2 1 2 1 WED416S16030A Clock to Valid Output Delay Output Data Hold Time Clock High Pulse Width Clock Low Pulse Width Input Setup Time Input Hold Time Clock to Output in Low-Z Clock to Output in High-Z Row Active to Row Active Delay RAS# to CAS# Delay Row Precharge Time Row Active Time Row Cycle Time - Operation Last Data In to New Column Address Delay Last Data In to Row Precharge Last Data In to Burst Stop Column Address to Column Address Delay CAS latency = 3 Number of Valid Output Data CAS latency = 2 Data Setup Time Data Hold Time tDS tDH 10 10 1 7 3 3 3 2 1 1 7 20 20 20 50 70 1 2 1 1 2 1 2 1 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns CK CK CK CK ea ns ns Notes 1 1,2 2 3 3 3 3 2 4 4 4 4 4 5 5 5 6 7 NOTES: 1. Parameters depend on programmed CAS latency. 2. If clock rise time is longer than 1ns, (tRISE 2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time = 1ns. If tRISE & tFALL are longer than 1ns, [(tRISE + tFALL)/2]-1ns should be added to the parameter. 4. The minimum number of clock cycles required is determined by dividing the minimum time required by the clock cycle time and then rounding up to the next higher integer. 5. Minimum delay is required to complete write. 6. All devices allow every cycle column address changes. 7. In case of row precharge interrupt, auto precharge and read burst stop. White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs COMMAND TRUTH TABLE CKE Command Register Refresh Precharge Bank Activate Write Read Auto Precharge Disable Auto Precharge Enable Auto Precharge Disable Auto Precharge Enable Mode Register Set Auto(CBR) Entry Self Single Bank All Banks Previous Cycle H H H H H H H H H X H X Current Cycle X H X X X X X X X X X L H CE# L L L L L L L L H X X H RAS# L L L L H H H H X X X X CAS# L L H H L L H H X X X X WE# L H L H L H L H X X X X DQM X X X X X X X X X X L H X WED416S16030A BA0,1 A10/AP OP CODE A0-9, A11-12 Notes X BA X BA BA BA X X X X X X X X 2 2 2 2 3 L X H X Row Address L Column Address H L Column Address H X X X X X X X X X 4 X X Burst Stop No Operation Device Select Clock Suspend/Standby Mode L Write/Output Enable Data Mask/Output Disable Entry Power Down Mode Exit (X = Don't Care, H = Logic High, L = Logic Low) 5 6 NOTES: 1. All of the SDRAM operations are defined by states of CE#, WE#, RAS#, CAS#, and DQM at the positive rising edge of the clock. 2. Bank Select (BA), if BA0, BA1 = 0, 0 then bank A is selected, if BA0, BA1 = 1, 0 then bank B, if BA0, BA1 = 0, 1 then bank C, if BA0, BA1 = 1, 1 then bank D is selected, respectively. 3. During a Burst Write cycle there is a zero clock delay, for a Burst Read cycle the delay is equal to the CAS# latency. 4. During normal access mode, CKE is held high and CK is enabled. When it is low, it freezes the internal clock and extends data Read and Write operations. One clock delay is required for mode entry and exit. 5. The DQM has two functions for the data DQ Read and Write operations. During a Read cycle, when DQM goes high at a clock timing the data outputs are disabled and become high impedance after a two clock delay. DQM also provides a data mask function for Write cycles. When it activates, the Write operation at the clock is prohibted (zero clock latency). 6. All banks must be precharged before entering the Power Down Mode. The Power Down Mode does not perform any Refresh operations, therefore the device cannot remain in this mode longer than the Refresh period (tREF) of the device. One clock delay is required for mode entry and exit. White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs CLOCK ENABLE (CKE0) TRUTH TABLE CKE Current State Previous Cycle H L L L L L L H L L L H H H H H H H H H H L H H L L Current Cycle X H H H H H L X H H L H H H H H L L L L L X H L H L CE# X H L L L L X X H L X H L L L L H L L L L X X X X X RAS# X X H H H L X X X X X X H L L L X H L L L X X X X X Command CAS# X X H H L X X X X X X X X H L L X X H L L X X X X X WE# X X H L X X X X X X X X X X H L X X X H L X X X X X BA0,1 X X X X X X X X X X X A0-9, A11-12 X X X X X X X X X X X WED416S16030A Action INVALID Exit Self Refresh with Device Deselect Exit Self Refresh with No Operation ILLEGAL ILLEGAL ILLEGAL Maintain Self Refresh INVALID Power Down Mode exit, all banks idle ILLEGAL Maintain Power Down Mode Refer to the Idle State section of the Current State Truth Table Notes 1 Self Refresh 2 1 2 Power Down 3 X X OP Code CBR Refresh Mode Register Set Refer to the Idle State section of the Current State Truth Table 4 3 4 4 All Banks Idle X X X X X X X OP Code X X X X X Any State other than listed above Entry Self Refresh Mode Register Set Power Down Refer to the Operations in the Current State Truth Table Begin Clock Suspend next cycle Exit Clock Suspend next cycle Maintain Clock Suspend 5 NOTES: 1. For the given Current State CKE must be low in the previous cycle. 2. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously. The minimum setup time for CKE (tCKS) must be satisfied before any command other than Exit is issued. 3. The address inputs (A12-A0) depend on the command that is issued. See the Idle State section of the Current State Truth Table for more information. 4. The Power Down Mode, Self Refresh Mode, and the Mode Register Set can only be entered from the all banks idle state. Must be a legal command as defined in the Current State Truth Table. White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs CURRENT STATE TRUTH TABLE Command Current State CE# L L L L Idle L L L L H L L L L Row Active L L L L H L L L L Read L L L L H L L L L Write L L L L H L L L Read with Auto Precharge L L L L L H RAS# L L L L H H H H X L L L L H H H H X L L L L H H H H X L L L L H H H H X L L L L H H H H X CAS# L L H H L L H H X L L H H L L H H X L L H H L L H H X L L H H L L H H X L L H H L L H H X WE# L H L H L H L H X L H L H L H L H X L H L H L H L H X L H L H L H L H X L H L H L H L H X X X BA BA BA X X X X X BA BA BA X X X OP Code X X Row Address Column Column X X X X X BA BA BA X X X OP Code X X Row Address Column Column X X X X X BA BA BA X X X OP Code X X Row Address Column Column X X X X X BA BA BA X X X OP Code X X Row Address Column Column X X X BA0,1 A11-12 A10/AP-A0 OP Code X X Row Address Column Column X X X Description Mode Register Set Auto orSelf Refresh Precharge Bank Activate Write w/o Precharge Read w/o Precharge Burst Termination No Operation Device Deselect Mode Register Set Auto orSelf Refresh Precharge Bank Activate Write Read Burst Termination No Operation Device Deselect Mode Register Set Auto orSelf Refresh Precharge Bank Activate Write Read Burst Termination No Operation Device Deselect Mode Register Set Auto orSelf Refresh Precharge Bank Activate Write Read Burst Termination No Operation Device Deselect Mode Register Set Auto orSelf Refresh Precharge Bank Activate Write Read Burst Termination No Operation Device Deselect WED416S16030A Action Set the Mode Register Start Auto orSelf Refresh No Operation Activate the specified bank and row ILLEGAL ILLEGAL No Operation No Operation No Operation or Power Down ILLEGAL ILLEGAL Precharge ILLEGAL Start Write; Determine if Auto Precharge Start Read; Determine if Auto Precharge No Operation No Operation No Operation ILLEGAL ILLEGAL Terminate Burst; Start the Precharge ILLEGAL Terminate Burst; Start the Write cycle Terminate Burst; Start a new Read cycle Terminate the Burst Continue the Burst Continue the Burst ILLEGAL ILLEGAL Terminate Burst; Start the Precharge ILLEGAL Terminate Burst; Start a new Write cycle Terminate Burst; Start the Read cycle Terminate the Burst Continue the Burst Continue the Burst ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL Continue the Burst Continue the Burst Notes 2 2,3 4 5 6 4 7,8 4 8,9 4 8,9 4 White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs CURRENT STATE TRUTH TABLE (CONT.) Command Current State CE# L L L Write with Auto Precharge L L L L L H L L L L Precharging L L L L H L L L L Row Activating L L L L H L L L L Write Recovering L L L L H L L L Write Recovering with Auto Precharge L L L L L H April 2006 Rev. 1 WED416S16030A RAS# L L L L H H H H X L L L L H H H H X L L L L H H H H X L L L L H H H H X L L L L H H H H X CAS# L L H H L L H H X L L H H L L H H X L L H H L L H H X L L H H L L H H X L L H H L L H H X WE# L H L H L H L H X L H L H L H L H X L H L H L H L H X L H L H L H L H X L H L H L H L H X BA0,1 A11-12, A10/AP-A0 OP Code X X Row Address Column Column X X X OP Code X X Row Address Column Column X X X OP Code X X Row Address Column Column X X X OP Code X X Row Address Column Column X X X OP Code X X Row Address Column Column X X X Description Mode Register Set Auto orSelf Refresh Precharge Bank Activate Write Read Burst Termination No Operation Device Deselect Mode Register Set Auto orSelf Refresh Precharge Bank Activate Write w/o Precharge Read w/o Precharge Burst Termination No Operation Device Deselect Mode Register Set Auto orSelf Refresh Precharge Bank Activate Write Read Burst Termination No Operation Device Deselect Mode Register Set Auto orSelf Refresh Precharge Bank Activate Write Read Burst Termination No Operation Device Deselect Mode Register Set Auto orSelf Refresh Precharge Bank Activate Write Read Burst Termination No Operation Device Deselect Action ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL Continue the Burst Continue the Burst ILLEGAL ILLEGAL No Operation; Bank(s) idle after tRP ILLEGAL ILLEGAL ILLEGAL No Operation; Bank(s) idle after tRP No Operation; Bank(s) idle after tRP No Operation; Bank(s) idle after tRP ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL No Operation; Row active after tRCD No Operation; Row active after tRCD No Operation; Row active after tRCD ILLEGAL ILLEGAL ILLEGAL ILLEGAL Start Write; Determine if Auto Precharge Start Read; Determine if Auto Precharge No Operation; Row active after tDPL No Operation; Row active after tDPL No Operation; Row active after tDPL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL No Operation; Precharge after tDPL No Operation; Precharge after tDPL No Operation; Precharge after tDPL Notes X X BA BA BA X X X X X BA BA BA X X X X X BA BA BA X X X X X BA BA BA X X X X X BA BA BA X X X 4 4 4 4,10 4 4 9 4 4,9 White Electronic Designs Corp. reserves the right to change products or specifications without notice. 8 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs CURRENT STATE TRUTH TABLE (CONT.) Command Current State CE# L L L L L L L L H L L L L L L L L H RAS# L L L L H H H H X L L L L H H H H X CAS# L L H H L L H H X L L H H L L H H X WE# L H L H L H L H X L H L H L H L H X BA0,1 X X BA BA BA X X X X X BA BA BA X X X A11-12, A10/AP-A0 OP Code X X Row Address Column Column X X X OP Code X X Row Address Column Column X X X Description Mode Register Set Auto orSelf Refresh Precharge Bank Activate Write Read Burst Termination No Operation Device Deselect Mode Register Set Auto orSelf Refresh Precharge Bank Activate Write Read Burst Termination No Operation Device Deselect WED416S16030A Action ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL No Operation; Idle after tRC No Operation; Idle after tRC No Operation; Idle after tRC ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL No Operation; Idle after two clock cycles No Operation; Idle after two clock cycles Notes Refreshing Mode Register Accessing NOTES: 1. CKE is assumed to be active (high) in the previous cycle for all entries. The Current State is the state of the bank that the command is being applied to. 2. Both Banks must be idle otherwise it is an illegal action. 3. If CKE is active (high) the SDRAM starts the Auto (CBR) Refresh operation, if CKE is inactive (low) then the Self Refresh mode is entered. 4. The Current State refers only to one of the banks, if BA0, BA1 selects this bank then the action is illegal. If BA0, BA1 selects the bank not being referenced by the Current State then the action may be legal depending on the state of that bank. 5. If CKE is inactive (low) then the Power Down mode is entered, otherwise there is a No Operation. 6. The minimum and maximum Active time (tRAS) must be satisfied. 7. The RAS# to CAS# Delay (tRCD) must occur before the command is given. 8. Address A10 is used to determine if the Auto Precharge function is activated. 9. The command must satisfy any bus contention, bus turn around, and/or write recovery requirements. The command is illegal if the minimum bank to bank delay time (tRRD) is not satisfied. White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 9 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs MODE REGISTER DEFINITION A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus WED416S16030A Mode Register (Mx) Reserved* WB Op Mode CAS Latency BT Burst Length *Should program M12, M11, M10 = "0, 0, 0" to ensure compatibility with future devices. M2 M1 M0 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 1 2 4 8 Burst Length M3 = 0 M3 = 1 1 2 4 8 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Full Page M3 0 1 Burst Type Sequential Interleaved M6 M5 M4 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 CAS Latency Reserved Reserved 2 3 Reserved Reserved Reserved Reserved M8 0 - M7 0 - M6-M0 Defined - Operating Mode Standard Operation All other states reserved M9 0 1 Write Burst Mode Programmed Burst Length Single Location Access White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 10 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED416S16030A SINGLE BIT READ-WRITE CYCLE (SAME PAGE) @ CAS LATENCY = 3, BURST LENGTH = 1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 CLOCK t CC CKE t CH t CL HIGH t RCD t RAS CE# t RCD t SS t SH t RP t SS RAS# t SH t SS CAS# t SH t CCD t SS ADDR Ra t SH Ca t SS Cb t SH Cc Rb Note 2 Note 2, 3 Note 2, 3 Note 2, 3 Note 4 Note 2 BA BS BS BS BS BS BS A10/AP Ra Note 3 Note 3 Note 3 Note 4 Rb t RAC t SAC DQ Qa t SS Db t SH Qc t SLZ WE# t OH t SS t SH t SS DQM t SH Row Active Read Write Read Precharge Row Active DON'T CARE NOTES: 1. All input except CKE & DQM can be don't care when CE# is high at the CK high going edge. 2. Bank active & read/write are controlled by BA0~BA1. BA0 0 0 1 1 BA1 0 1 0 1 Active & Read/Write Bank A Bank B Bank C Bank D 3. Enable and disable auto precharge function are controlled by A10/AP in read/write command. A10/AP BA0 0 0 0 1 1 0 1 0 1 1 BA1 0 1 0 1 0 1 0 1 Operation Distribute auto precharge, leave bank A active at end of burst. Disable auto precharge, leave bank B active at end of burst. Disable auto precharge, leave bank C active at end of burst. Disable auto precharge, leave bank D active at end of burst. Enable auto precharge, precharge bank A at end of burst. Enable auto precharge, precharge bank B at end of burst. Enable auto precharge, precharge bank C at end of burst. Enable auto precharge, precharge bank D at end of burst. 4. A10/AP and BA0~BA1 control bank precharge when precharge command is asserted. A10/AP 0 0 0 0 1 BA0 0 0 1 1 x BA1 0 1 0 1 x Precharge Bank A Bank B Bank C Bank D All Banks White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs POWER UP SEQUENCE 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 WED416S16030A 15 16 17 18 19 CKE High level is necessary CE# t RP RAS# t RFC t RFC CAS# ADDR Key RAa BA A10/AP RAa DQ HIGH-Z WE# DQM High level is necessary Precharge (All Banks) Auto Refresh Auto Refresh Mode Register Set Row Active (A-Bank) DON'T CARE White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 12 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED416S16030A READ & WRITE CYCLE AT SAME BANK @ BURST LENGTH = 4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 CLOCK CKE Note 1 HIGH t RC CE# t RCD RAS# Note 2 CAS# ADDR Ra Ca0 Rb Cb0 BA A10/AP Ra Rb Note 3 t RAC t SHZ t SAC Qa0 Note 4 t OH Qa1 Qa2 Qa3 Db0 Db1 Db2 t RDL Db3 CL = 2 DQ CL = 3 t RAC Note 3 t SAC Qa0 t OH Qa1 Qa2 t SHZ Qa3 Note 4 t RDL Db0 Db1 Db2 Db3 WE# DQM Row Active (A-Bank) Read (A-Bank) Precharge (A-Bank) Row Active (A-Bank) Write (A-Bank) Precharge (A-Bank) DON'T CARE NOTES: 1. Minimum row cycle times are required to complete internal DRAM operation. 2. Row precharge can interrupt burst on any cycle. (CAS Latency - 1) number of valid output data is available after Row precharge. Last valid output will be Hi-Z(tSHZ) after the clock. 3. Access time from Row active command. tCC *(tRCD + CAS latency - 1) + tSAC. 4. Output will be Hi-Z after the end of burst (1, 2, 4, 8 & full page bit burst). White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 13 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED416S16030A PAGE READ & WRITE CYCLE AT SAME BANK @ BURST LENGTH = 4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 CLOCK CKE HIGH CE# t RCD RAS# Note 2 CAS# ADDR Ra Ca0 Cb0 Cc0 Cd0 BA A10/AP Ra t RDL CL = 2 DQ CL = 3 Qa0 Qa1 Qb0 Qb1 Dc0 Qa0 Qa1 Qb0 Qb1 Qb2 Dc0 Dc1 Dd0 Dd1 t CDL Dc1 Dd0 Dd1 WE# Note 1 Note 3 DQM Row Active (A-Bank) Read (A-Bank) Read (A-Bank) Write (A-Bank) Write (A-Bank) Precharge (A-Bank) DON'T CARE NOTES: 1. To write data before burst read ends, DQM should be asserted three cycles prior to write command to avoid bus contention. 2. Row precharge will interrupt writing. Last data input, tRDL before Row precharge, will be written. 3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data after Row prechage cycle will be masked internally. White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 14 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED416S16030A PAGE READ CYCLE AT DIFFERENT BANK @ BURST LENGTH = 4 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 CKE Note 1 HIGH CE# RAS# Note 2 CAS# ADDR RAa CAa RBb CBb CAc CBd CAe BA A10/AP RAa RBb CL = 2 DQ CL = 3 QAa0 QAa1 QAa2 QAa3 QBb0 QBb1 QBb2 QBb3 QAc0 QAc1 QBd0 QBd1 QAe0 QAe1 QAa0 QAa1 QAa2 QAa3 QBb0 QBb1 QBb2 QBb3 QAc0 QAc1 QBd0 QBd1 QAe0 QAe1 WE# DQM Row Active (A-Bank) Row Active (B-Bank) Read (A-Bank) Read (B-Bank) Read (A-Bank) Read (B-Bank) Read (A-Bank) Precharge (A-Bank) DON'T CARE NOTES: 1. CE# can be don't cared when RAS#, CAS#, and WE# are high at the clock high going edge. 2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same. White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 15 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED416S16030A PAGE WRITE CYCLE AT DIFFERENT BANK @ BURST LENGTH = 4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 CLOCK CKE HIGH CE# RAS# Note 2 CAS# ADDR RAa CAa RBb CBb CAc CBd BA A10/AP RAa RBb t CDL DQ DAa0 DAa1 DAa2 DAa3 DBb0 DBb1 DBb2 DBb3 DAc0 DAc1 DBd0 t RDL DBd1 WE# Note 1 DQM Row Active (A-Bank) Row Active (B-Bank) Write (A-Bank) Write (B-Bank) Write (A-Bank) Write (B-Bank) Precharge (Both Banks) DON'T CARE NOTES: 1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data. 2. To interrupt burst write by Row precharge, both the write and the precharge banks must be the same. White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 16 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED416S16030A READ & WRITE CYCLE AT DIFFERENT BANK @ BURST LENGTH = 4 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 CKE HIGH CE# RAS# CAS# ADDR RAa CAa RBb CBb RAc CAc BA A10/AP RAa RBb RAc t CDL CL = 2 DQ CL = 3 QAa0 QAa1 QAa2 QAa3 DBb0 DBb1 DBb2 DBb3 QAa0 QAa1 QAa2 QAa3 DBb0 DBb1 DBb2 DBb3 Note 1 QAc0 QAc1 QAc2 QAc0 QAc1 WE# DQM Row Active (A-Bank) Read (A-Bank) Precharge (A-Bank) Row Active (B-Bank) Write (B-Bank) Row Active (A-Bank) Read (A-Bank) DON'T CARE NOTES: 1. tCDL should be met to complete write. White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 17 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED416S16030A READ & WRITE CYCLE WITH AUTO PRECHARGE @ BURST LENGTH = 4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 CLOCK CKE HIGH CE# RAS# CAS# ADDR Ra Rb Ca Cb BA A10/AP Ra Rb CL = 2 DQ CL = 3 Qa0 Qa1 Qa2 Qa3 Db0 Db1 Db2 Db3 Qa0 Qa1 Qa2 Qa3 Db0 Db1 Db2 Db3 WE# DQM Row Active (A-Bank) Read with Auto Precharge (A-Bank) Row Active (B-Bank) Auto Precharge Start Point (A-Bank) Write with Auto Precharge (B-Bank) A uto Precharge Start Point (B-Bank) DON'T CARE NOTES: 1. tCDL should be controlled to meet minimum tRAS before internal precharge start. (In the case of Burst Length=1 & 2 and BRSW mode) White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 18 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED416S16030A CLOCK SUSPENSION & DQM OPERATION CYCLE @ CAS LATENCY = 2, BURST LENGTH = 4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 CLOCK CKE CE# RAS# CAS# ADDR Ra Ca Cb Cc BA A10/AP Ra t SHZ DQ Qa0 Qa1 Qa2 Qa3 Qb1 t SHZ Qb1 Dc0 Dc2 WE# Note 1 DQM Row Active Read Clock Suspension Read Read DQM Write Write DQM Clock Suspension Write DQM DON'T CARE NOTES: 1. DQM is needed to prevent bus contention. White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 19 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED416S16030A READ INTERRUPTED BY PRECHARGE COMMAND & READ BURST STOP @ BURST LENGTH=FULL PAGE 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 CLOCK CKE HIGH CE# RAS# CAS# ADDR RAa CAa CAb BA A10/AP RAa Note 2 1 1 CL = 2 DQ QAa0 QAa1 QAa2 QAa3 QAa4 QAb0 QAb1 QAb2 QAb3 QAb4 QAb5 2 2 CL = 3 QAa0 QAa1 QAa2 QAa3 QAa4 QAb0 QAb1 QAb2 QAb3 QAb4 QAb5 WE# DQM Row Active (A-Bank) Read (A-Bank) Burst Stop Read (A-Bank) Precharge (A-Bank) DON'T CARE NOTES: 1. At full page mode, burst is end at the end of burst. So auto precharge is possible. 2. About the valid DQs after burst stop, it is same as the case of RAS# interrupt. Both cases are illustrated in above timing diagram. See the label 1, 2. But at burst write, Burst stop and RAS# interrupt should be compared carefully. Refer to the timing diagram of "Full page write burst stop cycle." 3. Burst stop is valid at every burst length. White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 20 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED416S16030A WRITE INTERRUPTED BY PRECHARGE COMMAND & WRITE BURST STOP CYCLE @ BURST LENGTH=FULL PAGE 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 CLOCK CKE HIGH CE# RAS# CAS# ADDR RAa CAa CAb BA A10/AP RAa t BDL t RDL Note 2 DQ DAa0 DAa1 DAa2 DAa3 DAa4 DAb0 DAb1 DAb2 DAb3 DAb4 DAb5 WE# DQM Row Active (A-Bank) Write (A-Bank) Burst Stop Write (A-Bank) Precharge (A-Bank) DON'T CARE NOTES: 1. At full page mode, burst is end at the end of burst. So auto precharge is possible. 2. Data-in at the cycle of interrupted by precharge cannnot be written into the corresponding memory cell. It is defined by AC parameter of tRDL. DQM at write interrupted by precharge command is needed to prevent invalid write. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data after Row precharge cycle will be masked internally. 3. Burst stop is valid at every burst length. White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 21 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED416S16030A BURST READ SINGLE BIT WRITE CYCLE @ BURST LENGTH = 2 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Note 1 CKE HIGH CE# RAS# Note 2 CAS# ADDR RAa CAa RBb CAb RAc CBc CAd BA A10/AP RAa RBb RAc CL = 2 DQ CL = 3 DAa0 QAb0 QAb1 DBc0 QAd0 QAd1 DAa0 QAb0 QAb1 DBc0 QAd0 QAd1 WE# DQM Row Active (A-Bank) Row Active (B-Bank) Write (A-Bank) Read with Auto Precharge (A-Bank) Row Active (A-Bank) Write with Auto Precharge (B-Bank) Read (A-Bank) Precharge (Both Banks) DON'T CARE NOTES: 1. BRSW mode is enabled by setting A9 "High" at MRS (Mode Register Set). At the BRSW Mode, the burst length at write is fixed to "1" regardless of programmed burst length. 2. When BRSW write command with auto precharge is executed, keep it in mind that tRAS should not be violated. Auto precharge is executed at the burst-end cycle, so in the case of BRSW write command, the next cycle starts the precharge. White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 22 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WED416S16030A ACTIVE/PRECHARGE POWER DOWN MODE @ CAS LATENCY = 2, BURST LENGTH = 4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 CLOCK t SS CKE Note 1 Note 3 Note 2 t SS t SS CE# RAS# CAS# ADDR Ra Ca BA A10/AP Ra t SHZ DQ Qa0 Qa1 Qa2 WE# DQM Precharge Power-Down Entry Row Active Precharge Active Power-Down Power-Down Exit Entry Read Active Power-Down Exit Precharge DON'T CARE NOTES: 1. Both banks should be in idle state prior to entering precharge power down mode. 2. CKE should be set high at least 1CK + tSS prior to Row active command. 3. Can not violate minimum refresh specification (64ms). White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 23 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs SELF REFRESH ENTRY & EXIT CYCLE 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 WED416S16030A 15 16 17 18 19 t SS CKE Note 1 Note 2 Note 3 Note 4 t RFC m in Note 6 CE# Note 5 RAS# Note 7 CAS# ADDR BA A10/AP DQ HI-Z HI-Z WE# DQM S elf Refresh Entry Self Refresh Exit Auto Refresh DON'T CARE NOTES: TO ENTER SELF REFRESH MODE 1. CE#, RAS# & CAS# with CKE should be low at the same clock cycle. 2. After 1 clock cycle, all the inputs including the system clock can be don't care except for CKE. 3. The device remains in self refresh mode as long as CKE stays "Low." Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh. TO EXIT SELF REFRESH MODE 4. System clock restart and be stable before returning CKE high. 5. CE# starts from high. 6. Minimum tRFC is required after CKE going high to complete self refresh exit. 7. 4K cycle of burst auto refresh is required before self refresh entry and after self refresh exit if the system uses burst refresh. White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 24 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs MODE REGISTER SET CYCLE 0 1 2 3 4 5 6 7 8 0 1 2 WED416S16030A AUTO REFRESH CYCLE 3 4 5 6 7 8 9 10 CLOCK CKE HIGH HIGH CE# Note 2 t RFC RAS# Note 1 CAS# Note 3 ADDR Key Ra DQ HI-Z HI-Z WE# DQM MRS New Command Auto Refresh New Command DON'T CARE NOTES: Both banks precharge should be completed before Mode Register Set cycle and auto refresh cycle. MODE REGISTER SET CYCLE 1. CE#, RAS#, CAS#, & WE# activation at the same clock cycle with address key will set internal mode register. 2. Minimum 2 clock cycles should be met before new RAS# activation. 3. Please refer to Mode Register Set table. White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 25 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs PACKAGE DIMENSION: 54 PIN TSOP II 22.35 (0.880) 22.10 (0.870) Note 1 WED416S16030A VIEW A 1.20 (0.047) MAX 10.29 (0.405) 10.03 (0.395) Note 2 11.96 (0.471) 11.56 (0.455) 0.15 (0.006) 0.05 (0.002) 0.61 (0.024) 0.41 (0.016) 0.80 (0.0315) TYP 0.51 (0.020) 0.25 (0.010) SEE VIEW A 0-8 NOTES: 1. Dimension does not include 0.006 inch Flash each side. 2. Dimension does not include 0.010 inch Flash each side. 0.203 (0.008) 0.125 (0.005) ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES ORDERING INFORMATION Part Number WED416S16030C7SI WED416S16030C75SI WED416S16030C8SI WED416S16030C10SI Operating Frequency 133MHZ (CL2) 133MHZ (CL3) 125MHZ 100MHZ Package 54 TSOP II 54 TSOP II 54 TSOP II 54 TSOP II White Electronic Designs Corp. reserves the right to change products or specifications without notice. April 2006 Rev. 1 26 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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