WF512K64-150G4WM5

WF512K64-XG4WX5 HI-RELIABILITY PRODUCT 512Kx64 5V FLASH MODULE FEATURES ■ Access Times of 70, 90, 120, 150ns ■ Packaging PRELIMINARY* ■ 5 Volt Programming. 5V ± 10% Supply. ■ Low Power CMOS, 6.5mA Standby ■ Embedded Erase and Program Algorithms ■ TTL Compatible Inputs and CMOS Outputs ■ Built-in Decoupling Caps for Low Noise Operation ■ Page Program Operation and Internal Program Control Time ■ Weight WF512K64-XG4WX5 - 20 grams typical * This data sheet describes a product under development, not fully characterized, and is subject to change without notice. Note: Programming information available upon request. • 116 lead, 40mm square, Hermetic CQFP (Package 504) ■ 100,000 Erase/Program Cycles Minimum ■ Sector Architecture • 8 equal size sectors of 64KBytes each • Any combination of sectors can be concurrently erased. Also supports full chip erase ■ Organized as 512Kx64, user configurable as 1Mx32, 2Mx16, or 4Mx8. ■ Commercial, Industrial and Military Temperature Ranges FIG. 1 PIN CONFIGURATION FOR WF512K64-XG4WX5 TOP VIEW I/O2 I/O1 I/O0 VCC WE2 CS2 NC A0 A1 A2 A3 A4 WE1 CS1 NC CS8 WE8 A5 A6 A7 A8 A9 NC CS7 WE7 VCC I/O63 I/O62 I/O61 A0-18 OE 1 512K x 8 W E1 C S 1 BLOCK DIAGRAM W E2 C S2 W Ex C Sx W E8 C S8 2 512K x 8 ...... 8 8 512K x 8 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 GND I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 116 115 114 113 112 111 110 109 108 107 106 105 104 103 102 101 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 74 I/O60 I/O59 I/O58 I/O57 I/O56 GND I/O55 I/O54 I/O53 I/O52 I/O51 I/O50 I/O49 I/O48 GND I/O47 I/O46 I/O45 I/O44 I/O43 I/O42 I/O41 I/O40 GND I/O39 I/O38 I/O37 I/O36 I/O35 8 8 8 I/O0-7 I/O8-15 I/O... I/O56-63 PIN I/O0-63 A0-18 WE1-8 CS1-8 OE VCC GND NC DESCRIPTION Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected May 1999 Rev.2 I/O29 I/O30 I/O31 VCC WE3 CS3 NC NC A18 A17 A16 A15 WE4 CS4 OE CS5 WE5 A14 A13 A12 A11 A10 NC CS6 WE6 VCC I/O32 I/O33 I/O34 1 White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 WF512K64-XG4WX5 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Supply Voltage Range (VCC) Signal voltage range (any pin except A9) (2) Storage Temperature Range Lead Temperature (soldering, 10 seconds) Data Retention (Mil Temp) Endurance (write/erase cycles) (Mil Temp) A9 Voltage for sector protect (VID) (3) -55 to +125 -2.0 to +7.0 -2.0 to +7.0 -65 to +150 +300 20 years 100,000 cycles min. -2.0 to +14.0 V Unit °C V V °C °C Parameter OE capacitance WE capacitance CS capacitance Data I/O capacitance Address input capacitance CAPACITANCE (TA = +25°C) Symbol C OE C WE C CS C I/O C AD Conditions VIN = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz VI/O = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz Max 100 20 20 20 100 Unit pF pF pF pF pF This parameter is guaranteed by design but not tested. NOTES: 1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may overshoot V SS t o -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins is V CC + 0 .5V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns. 3. Minimum DC input voltage on A 9 p in is -0.5V. During voltage transitions, A9 may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A 9 i s +13.5V which may overshoot to 14.0 V for periods up to 20ns. RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil.) Operating Temp. (Ind.) A9 Voltage for Sector Protect Symbol V CC V IH V IL TA TA VID Min 4.5 2.0 -0.5 -55 -40 11.5 Max 5.5 V CC + 0.5 +0.8 +125 +85 12.5 Unit V V V °C °C V DC CHARACTERISTICS - CMOS COMPATIBLE (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter Input Leakage Current Output Leakage Current VCC Active Current for Read (1) VCC Active Current for Program or Erase (2) V CC S tandby Current V CC S tatic Current Output Low Voltage Output High Voltage Symbol I LI I LOx32 ICC1 ICC2 I CC4 I CC3 V OL V OH1 Conditions V CC = 5.5, V IN = GND to VCC V CC = 5.5, V IN = GND to VCC CS = VIL, OE = V IH, f = 5MHz CS = VIL, OE = VIH V CC = 5.5, CS = VIH, f = 5MHz V CC = 5.5, CS = V IH I OL = 8 .0 mA, V CC = 4 .5 I OH = - 2.5 mA, V CC = 4 .5 0.85 X Min Max 10 10 380 480 13 1.2 0.45 Unit µA µA mA mA mA mA V V V CC Low V CC L ock-Out Voltage V LKO 3.2 4.2 V NOTES: 1. The I CC c urrent listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically is less than 2 mA/ MHz, with OE at V IH . 2. I CC a ctive while Embedded Algorithm (program or erase) is in progress. 3. DC test conditions: V IL = 0 .3V, VIH = V CC - 0 .3V White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 2 WF512K64-XG4WX5 AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter Write Cycle Time Write Enable Setup Time Chip Select Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Chip Select Pulse Width High Duration of Byte Programming Operation (1) Chip and Sector Erase Time (2) Read Recovery Time Chip Programming Time Chip Erase Time (3) NOTES: 1. Typical value for t WHWH1 i s 7µs. 2. Typical value for t WHWH1 i s 1sec. 3. Typical value for Chip Erase Time is 8sec. Symbol Min t AVAV t WLEL t ELEH t AVEL t DVEH t EHDX t ELAX t EHEL t WHWH1 t WHWH2 t GHEL 0 11 64 t WC t WS t CP t AS t DS t DH t AH t CPH 70 0 45 0 45 0 45 20 300 15 0 11 64 -70 Max Min 90 0 45 0 45 0 45 20 300 15 0 11 64 -90 Max Min 120 0 50 0 50 0 50 20 300 15 0 11 64 -120 Max 150 0 50 0 50 0 50 20 300 15 ns ns ns ns ns ns ns ns µs sec ns sec sec -150 Unit FIG. 2 AC TEST CONDITIONS Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level Output Timing Reference Level Typ VIL = 0, VIH = 3.0 5 1.5 1.5 Unit V ns V V AC TEST CIRCUIT NOTES: VZ i s programmable from -2V to +7V. I OL & I OH p rogrammable from 0 to 16mA. Tester Impedance Z0 = 7 5 ý. VZ i s typically the midpoint of V OH a nd VOL . IOL & IOH a re adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. 3 White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 WF512K64-XG4WX5 AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE CONTROLLED (VCC = 5.0V, TA = -55°C to +125°C) Parameter Write Cycle Time Chip Select Setup Time Write Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Write Enable Pulse Width High Duration of Byte Programming Operation (1) Sector Erase Time (2) Read Recovery Time before Write VCC Set-up Time Chip Programming Time Output Enable Setup Time Output Enable Hold Time (4) Chip Erase Time (3) NOTES: 1. Typical value for t WHWH1 i s 7µs. 2. Typical value for t WHWH1 i s 1sec. 3. Typical value for Chip Erase Time is 8sec. 4. For Toggle and Data Polling. tOES tOEH 0 10 64 Symbol Min t AVAV t ELWL t WLWH t AVWH t DVWH t WHDX t WHAX t WHWL t WHWH1 t WHWH2 t GHWL tVCS 0 50 11 0 10 64 t WC t CS t WP t AS t DS t DH t AH t WPH 70 0 45 0 45 0 45 20 300 15 0 50 11 0 10 64 -70 Max Min 90 0 45 0 45 0 45 20 300 15 0 50 11 0 10 64 -90 Max Min 120 0 50 0 50 0 50 20 300 15 0 50 11 -120 Max Min 150 0 50 0 50 0 50 20 300 15 -150 Max ns ns ns ns ns ns ns ns µs sec ns µs sec ns ns sec Unit AC CHARACTERISTICS – READ ONLY OPERATIONS (VCC = 5.0V, TA = -55°C to +125°C) Parameter Read Cycle Time Address Access Time Chip Select Access Time Output Enable to Output Valid Chip Select to Output High Z (1) Output Enable High to Output High Z (1) Output Hold from Address, CS or OE Change, whichever is First 1. Guaranteed by design, but not tested Symbol Min t AVAV t AVQV t ELQV t GLQV t EHQZ t GHQZ t AXQX t RC t ACC t CE t OE t DF t DF t OH 0 70 70 70 35 20 20 0 -70 Max Min 90 90 90 35 20 20 0 -90 Max Min 120 120 120 50 30 30 0 -120 Max Min 150 150 150 55 35 35 -150 Max ns ns ns ns ns ns ns Unit White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 4 WF512K64-XG4WX5 FIG. 3 AC WAVEFORMS FOR READ OPERATIONS tDF tOH Addresses Stable tRC tOE tACC tCE WE OE Addresses 5 White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 Outputs CS High Z Output Valid High Z WF512K64-XG4WX5 FIG. 4 WRITE/ERASE/PROGRAM OPERATION, WE CONTROLLED tRC tOH tDF tOE PA Data Polling tAH tWHWH1 PA tAS tWPH tDH 5555H tGHWL tWC tWP tCS A0H PD D7 DOUT Addresses WE OE CS tDS NOTES: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. D 7 i s the output of the complement of the data written to each chip. 4. D OUT i s the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 6 5.0 V Data tCE WF512K64-XG4WX5 FIG. 5 AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS SA 2AAAH 5555H 2AAAH 5555H tWPH 5555H tWP AAH tDS tAS tGHWL tCS tDH 55H tAH 80H AAH 55H 10H/30H Addresses WE OE CS Data NOTE: 1. SA is the sector address for Sector Erase. 7 White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 VCC tVCS WF512K64-XG4WX5 FIG. 6 AC WAVEFORMS FOR DATA POLLING DURING EMBEDDED ALGORITHM OPERATIONS t DF t OH High Z D7 = Valid Data D0-D7 Valid Data tWHWH 1 or 2 Data D0-D6 D0-D6 = Invalid t OE t OE t CH tOEH tCE White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 8 WE OE CS D7 D7 WF512K64-XG4WX5 FIG. 7 ALTERNATE CS CONTROLLED PROGRAMMING OPERATION TIMINGS PA Data Polling tAH tWHWH1 PA tAS tGHEL tCP tCPH tDH A0H 5555H tWC tWS PD WE OE CS tDS Addresses D7 DOUT Notes: 1. PA represents the address of the memory location to be programmed. 2. PD represents the data to be programmed at byte address. 3. D 7 i s the output of the complement of the data written to each chip. 4. D OUT i s the output of the data written to the device. 5. Figure indicates the last two bus cycles of a four bus cycle sequence. 9 White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 5.0 V Data WF512K64-XG4WX5 PACKAGE 504: 116 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G4W) 5.1 (0.200) MAX 39.6 (1.56) ± 0.38 (0.015) SQ 1.27 (0.050) ± 0.1 (0.005) PIN 1 IDENTIFIER Pin 1 12.7 (0.500) ± 0.5 (0.020) 4 PLACES 5.1 (0.200) ± 0.25 (0.010) 4 PLACES 1.27 (0.050) REF 38 (1.50) REF 4 PLACES 0.38 (0.015) ± 0.08 (0.003) 68 PLACES 0.25 (0.010) ± 0.05 (0.002) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES ORDERING INFORMATION W F 512K64 - XXX G4W X 5 VPP PROGRAMMING VOLTAGE 5 = 5V DEVICE GRADE: M = Military Screened I = Industrial C = Commercial -55°C to +125°C -40°C to +85°C 0°C to + 70°C PACKAGE TYPE: G4W = 116 Lead 40mm Ceramic Quad Flat Pack, CQFP (Package 504) ACCESS TIME (ns) ORGANIZATION, 512K x 64 User configurable as 1M x 32, 2M x 16 or 4M x 8 Flash WHITE ELECTRONIC DESIGNS CORP. White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 10