WMS256K16L-20FGI

White Electronic Designs WMS256K16-XXX 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES ■ ■ ■ Access Times 17, 20, 25, 35ns MIL-STD-883 Compliant Devices Available Packaging • 44 pin Ceramic SOJ (Package 102) • 44 lead Ceramic Flatpack (Package 225) • 44 lead Formed Ceramic Flatpack ■ ■ Organized as 256Kx16 Data Byte Control: • Lower Byte (LB#) = I/O1-8 • Upper Byte (UB#) = I/O9-16 ■ 2V Minimum Data Retention for battery back up operation (WMS256K16L-XXX Low Power Version Only) Commercial, Industrial and Military Temperature Range 5V Power Supply Low Power CMOS TTL Compatible Inputs and Outputs A0 A1 A2 A3 A4 CS# I/O1 I/O2 I/O3 I/O4 VCC GND I/O5 I/O6 I/O7 I/O8 WE# A5 A6 A7 A8 A9 PIN CONFIGURATION FOR WMS256K16-XXX 44 CSOJ 44 FlatpacK TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A17 A16 A15 OE# UB# LB# I/O16 I/O15 I/O14 I/O13 GND VCC I/O12 I/O11 I/O10 I/O9 NC A14 A13 A12 A11 A10 ■ ■ ■ ■ PIN DESCRIPTION A0-17 LB# UB# I/O1-16 CS# OE# WE# VCC GND NC Address Inputs Lower-Byte Control (I/O1-8) Upper-Byte Control (I/O9-16) Data Input/Output Chip Select Output Enable Write Enable +5.0V Power Ground No Connection August 2004 Rev. 6 1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs TRUTH TABLE CS# H L L L WE# X H X H OE# X H X L LB# X X H L H L L H L UB# X X H H L L H L L Mode Not Select Output Disable WMS256K16-XXX Data I/O I/O1-8 High Z High Z Data Out High Z Data Out Data In High Z Data In I/O9-16 High Z High Z High Z Data Out Data Out High Z Data In Data In Power Standby Active Read Active L L X Write Active ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage Symbol TA TSTG VG TJ VCC Min -55 -65 -0.5 -0.5 Max +125 +150 VCC+0.5 150 7.0 Unit °C °C V °C V RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil.) Symbol VCC VIH VIL TA Min 4.5 2.2 -0.3 -55 Max 5.5 VCC + 0.3 +0.8 +125 Unit V V V °C CAPACITANCE TA = +25°C Parameter Input capacitance Output capacitance Symbol CIN COUT Condition VIN = 0V, f = 1.0MHz VOUT = 0V, f = 1.0MHz Max 20 20 Unit pF pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C Parameter Input Leakage Current Output Leakage Current Operating Supply Current Standby Current Output Low Voltage Output High Voltage Symbol ILI ILO ICC ISB VOL VOH Conditions VCC = 5.5, VIN = GND to VCC CS# = VIH, OE# = VIH, VOUT = GND to VCC CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5 CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5 IOL = 6mA, VCC = 4.5 IOH = -4.0mA, VCC = 4.5 2.4 Min Max 10 10 275 17 0.4 Units µA µA mA mA V V NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V LOW POWER DATA RETENTION CHARACTERISTICS (WMS256K16L-XXX ONLY) -55°C ≤ TA ≤ +125°C Parameter Data Retention Supply Voltage Data Retention Current August 2004 Rev. 6 Symbol VDR ICCDR1 Conditions CS# ≥ VCC -0.2V VCC = 3V 2 Min 2.0 Typ 1.0 Max 5.5 8.0 Units V mA White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs AC CHARACTERISTICS VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C Parameter Symbol Read Cycle Read Cycle Time tRC Address Access Time tAA Output Hold from Address Change tOH Chip Select Access Time tACS Output Enable to Output Valid tOE Chip Select to Output in Low Z tCLZ1 Output Enable to Output in Low Z tOLZ1 Chip Disable to Output in High Z tCHZ1 Output Disable to Output in High Z tOHZ1 LB#, UB# Access Time tBA LB#, UB# Enable to Low Z Output tBLZ1 LB#, UB# Disable to High Z Output tBHZ1 1. This parameter is guaranteed by design but not tested. -17 Min 17 0 17 10 2 0 9 9 10 0 9 0 10 5 0 10 10 12 0 Max 17 0 20 12 5 0 Min 20 -20 Max 20 0 Min 25 WMS256K16-XXX -25 Max 25 0 25 15 5 0 12 12 14 0 12 Min 35 -35 Max 35 35 20 Units ns ns ns ns ns ns ns ns ns ns ns ns 15 15 17 15 AC CHARACTERISTICS VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C Parameter Write Cycle Symbol -17 Min 17 14 14 10 14 0 2 0 0 14 Max Min 20 17 17 12 17 0 2 0 0 17 -20 Max Min 25 20 20 15 20 0 2 0 0 20 -25 Max Min 35 25 25 20 25 0 2 0 0 25 -35 Max Units ns ns ns ns ns ns ns ns ns ns ns Write Cycle Time tWC Chip Select to End of Write tCW Address Valid to End of Write tAW Data Valid to End of Write tDW Write Pulse Width tWP Address Setup Time tAS Address Hold Time tAH Output Active from End of Write tOW1 Write Enable to Output in High Z tWHZ1 Data Hold Time tDH LB#, UB# Valid to End of Write tBW 1. This parameter is guaranteed by design but not tested. 9 10 10 15 AC TEST CIRCUIT Parameter I OL Current Source AC TEST CONDITIONS Typ VIL = 0, VIH = 3.0 5 1.5 1.5 Unit V ns V V Input Pulse Levels Input Rise and Fall Input and Output Reference Level Output Timing Reference Level D.U.T. C eff = 50 pf VZ ≈ 1.5V (Bipolar Supply) I OH Current Source Notes: Vz is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω. Vz is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. August 2004 Rev. 6 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs TIMING WAVEFORM - READ CYCLE tRC ADDRESS tAA CS# ADDRESS WMS256K16-XXX tRC tAA tOH tACS tCHZ DATA I/O PREVIOUS DATA VALID DATA VALID LB#, UB# tBA tBLZ tCLZ OE# tOE tOLZ DATA I/O HIGH IMPEDANCE READ CYCLE 2 (WE# = VIH) DATA VALID tOHZ tBHZ READ CYCLE 1 (CS# = OE# = VIL, UB# or LB# = VIL, WE# = VIH) WRITE CYCLE - WE# CONTROLLED tWC ADDRESS tAW tCW CS# tAH tBW LB#, UB# tAS WE# tWP tOW tWHZ tDW DATA VALID tDH DATA I/O WRITE CYCLE 1, WE# CONTROLLED WRITE CYCLE - CS# CONTROLLED tWC ADDRESS WRITE CYCLE - LB#, UB# CONTROLLED tWC ADDRESS tAS CS# tAW tCW tBW tAH CS# tAS tAW tCW tBW tAH LB#, UB# LB#, UB# tWP WE# WE# tWP tDW tDH DATA I/O tDW DATA VALID tDH DATA I/O DATA VALID WRITE CYCLE 2, CS# CONTROLLED WRITE CYCLE 3, LB#, UB# CONTROLLED August 2004 Rev. 6 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs PACKAGE 102: 44 LEAD, CERAMIC SOJ WMS256K16-XXX 28.70 (1.13) ± 0.25 (0.010) 0.2 (0.008) ± 0.05 (0.002) 3.96 (0.156) MAX 0.89 (0.035) Radius TYP 11.3 (0.446) ± 0.2 (0.009) 9.55 (0.376) ± 0.25 (0.010) 1.27 (0.050) ± 0.25 (0.010) 1.27 (0.050) TYP 26.7 (1.050) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 225: 44 LEAD, CERAMIC FLAT PACK 28.45 (1.120) ± 0.26 (0.010) 2.60 (0.102) MAX 12.95 (0.510) ± 0.13 (0.005) 10.16 (0.400) ± 0.51 (0.020) 0.43 (0.017) ± 0.05 (0.002) 26.67 (1.050) TYP 0.14 (0.006) ± 0.05 (0.002) 1.27 (0.050) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES August 2004 Rev. 6 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WMS256K16-XXX PACKAGE 211: 44 LEAD FORMED, CERAMIC FLAT PACK 28.45 (1.120) 3.81 (0.150) MAX 1.52 (0.060) TYP ± 0.26 (0.010) PIN 1 IDENTIFIER 12.95 (0.510) ± 0.13 (0.005) 16.76 (0.660) ± 0.13 (0.005) 0.43 (0.017) ± 0.05 (0.002) 26.67 (1.050) TYP 0.14 (0.006) ± 0.05 (0.002) 1.27 (0.050) TYP + + 1.90 (0.075) TYP 0.46 (0.030) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES ORDERING INFORMATION W M S 256K16 X - XXX X X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: M = Military Screened I = Industrial C = Commercial PACKAGE: DL = 44 Lead Ceramic SOJ (Package 102) FL = 44 Lead Ceramic Flatpack (Package 225) FG = 44 Lead Formed Ceramic Flatpack ACCESS TIME (ns) IMPROVEMENT MARK: Blank = Standard Power L = Low Power Data Retention ORGANIZATION, 256K x 16 SRAM MONOLITHIC WHITE ELECTRONIC DESIGNS CORP. -55°C to +125°C -40°C to +85°C 0°C to +70°C August 2004 Rev. 6 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs DEVICE TYPE 256K x 16 SRAM Monolithic 256K x 16 SRAM Monolithic 256K x 16 SRAM Monolithic 256K x 16 SRAM Monolithic 256K x 16 SRAM Monolithic 256K x 16 SRAM Monolithic 256K x 16 SRAM Monolithic 256K x 16 SRAM Monolithic 256K x 16 SRAM Monolithic 256K x 16 SRAM Monolithic 256K x 16 SRAM Monolithic 256K x 16 SRAM Monolithic WMS256K16-XXX SPEED 35ns 25ns 20ns 17ns 35ns 25ns 20ns 17ns 35ns 25ns 20ns 17ns PACKAGE 44 lead SOJ (DL) 44 lead SOJ (DL) 44 lead SOJ (DL) 44 lead SOJ (DL) 44 lead Flatpack (FL) 44 lead Flatpack (FL) 44 lead Flatpack (FL) 44 lead Flatpack (FL) 44 lead Formed Flatpack (FG) 44 lead Formed Flatpack (FG) 44 lead Formed Flatpack (FG) 44 lead Formed Flatpack (FG) SMD NO. 5962-96902 01HMX 5962-96902 02HMX 5962-96902 03HMX 5962-96902 04HMX 5962-96902 01HNX 5962-96902 02HNX 5962-96902 03HNX 5962-96902 04HNX 5962-96902 01HTX 5962-96902 02HTX 5962-96902 03HTX 5962-96902 04HTX August 2004 Rev. 6 7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com