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WS1M8V-25CMA

WS1M8V-25CMA

  • 厂商:

    WEDC

  • 封装:

  • 描述:

    WS1M8V-25CMA - 2x512Kx8 DUALITHICTM SRAM - White Electronic Designs Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
WS1M8V-25CMA 数据手册
White Electronic Designs 2x512Kx8 DUALITHIC™ SRAM FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ Access Times 17, 20, 25, 35, 45, 55ns Evolutionary, Corner Power/Ground Pinout Packaging: • 32 pin, Hermetic Ceramic DIP (Package 300) Organized as two banks of 512Kx8 Commercial, Industrial and Military Temperature Ranges 3.3V Power Supply Low Power CMOS TTL Compatible Inputs and Outputs Output Enable Internally tied to GND. A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND WS1M8V-XCX ADVANCED* PIN CONFIGURATION FOR WS1M8V-XCX 32 DIP TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A17 WE# A13 A8 A9 A11 CS2# A10 CS1# I/O7 I/O6 I/O5 I/O4 I/O3 * This product is under development, is not qualified or characterized and is subject to change or cancellation without notice. PIN DESCRIPTION A0-18 I/O0-7 CS#1-2 WE# VCC GND Address Inputs Data Input/Output Chip Selects Write Enable +3.3V Power Supply Ground BLOCK DIAGRAM I/O0-7 WE# A0-18 512K x 8 512K x 8 CS1# (1) CS2# (1) NOTE: 1. CS#1 and CS#2 are used to select the lower and upper 512Kx8 of the device. CS#1 and CS#2 must not be enabled at the same time. White Electronic Designs Corp. reserves the right to change products or specifications without notice. October, 2002 Rev. 2 1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage Symbol TA TSTG VG TJ VCC Min -55 -65 -0.5 -0.5 Max +125 +150 +4.6 150 5.5 Unit °C °C V °C V CS# H L L WE# X H L Mode Standby Read Write WS1M8V-XCX ADVANCED* TRUTH TABLE Data I/O High Z Data Out Data In Power Standby Active Active NOTE: OE# is internally tied to GND. RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil.) Symbol VCC VIH VIL TA Min 3.0 2.2 -0.3 -55 Max 3.6 VCC + 0.3 +0.8 +125 Unit V V V °C Parameter Input capacitance Output capicitance CAPACITANCE TA = +25°C Symbol CIN COUT Condition VIN = 0V, f = 1.0MHz VOUT = 0V, f = 1.0MHz Max 28 28 Unit pF pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS VCC = 3.3V, GND = 0V, -55°C ≤ TA ≤ +125°C) Parameter Input Leakage Current Output Leakage Current Operating Supply Current Standby Current Output Low Voltage Output High Voltage NOTE: DC test conditions: VIH = VCC -0.3V , VIL = 0.3V 1. OE# is internally tied to GND. Sym ILI ILO1 ICC1 ISB1 VOL VOH Conditions VCC = 3.6, VIN = GND to VCC CS# = VIH, VOUT = GND to VCC CS# = VIL, f = 5MHz, VCC = 3.6 CS# = VIH, f = 5MHz, VCC = 3.6 IOL = 8.0mA IOH = -4.0mA Min Max 10 10 160 30 0.4 2.4 Units µA µA mA mA V V White Electronic Designs Corp. reserves the right to change products or specifications without notice. October, 2002 Rev. 2 2 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs AC CHARACTERISTICS VCC = 3.3V, GND = 0V, -55°C ≤ TA ≤ +125°C) Parameter Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Chip Select to Output in Low Z Chip Disable to Output in High Z Symbol tRC tAA tOH tACS tCLZ1 tCHZ1 Min 17 0 17 2 9 2 10 -17 Max 17 0 20 2 12 Min 20 -20 Max 20 0 25 4 15 Min 25 -25 Max 25 0 35 4 Min 35 -35 Max 35 0 Min 45 WS1M8V-XCX ADVANCED* -45 Max 45 0 45 4 20 Min 55 -55 Max 55 55 20 Units ns ns ns ns ns ns NOTES: 1. This parameter is guaranteed by design but not tested. 2. OE# is internally tied to GND. AC CHARACTERISTICS VCC = 3.3V, GND = 0V, -55°C ≤ TA ≤ +125°C) Parameter Write Cycle Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write Write Enable to Output in High Z Data Hold Time Symbol tWC tCW tAW tDW tWP tAS tAH tOW1 tWHZ1 tDH Min 17 14 14 9 14 0 0 2 0 -17 Max Min 20 14 14 10 14 0 0 3 0 -20 Max Min 25 15 15 10 15 0 0 4 0 -25 Max Min 35 25 25 20 25 0 0 4 0 -35 Max Min 45 35 35 25 35 0 5 5 0 -45 Max Min 55 50 50 25 40 0 5 5 0 -55 Max ns ns ns ns ns ns ns ns ns ns Units 9 9 10 15 15 25 NOTES: 1. This parameter is guaranteed by design but not tested. AC TEST CIRCUIT I OL Current Source AC TEST CONDITIONS Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level Output Timing Reference Level VZ Typ VIL = 0, VIH = 3.0 5 1.5 1.5 Unit V ns V V D.U.T. C eff = 50 pf ≈ 1.5V (Bipolar Supply) I OH Current Source Notes: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. White Electronic Designs Corp. reserves the right to change products or specifications without notice. October, 2002 Rev. 2 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs TIMING WAVEFORM – READ CYCLE WS1M8V-XCX ADVANCED* tRC ADDRESS tRC ADDRESS tAA CS# tAA tACS tOH DATA I/O PREVIOUS DATA VALID DATA VALID tCHZ tCLZ OE# READ CYCLE 1 (CS# = OE# = VIL, WE# = VIH) tOE tOLZ DATA I/O HIGH IMPEDANCE tOHZ DATA VALID READ CYCLE 2 (WE# = VIH) NOTE: OE# is internally tied to the GND. WRITE CYCLE – WE# CONTROLLED tWC ADDRESS tAW tCW CS# tAS WE# tWHZ DATA I/O tDW tWP tOW tDH tAH DATA VALID WRITE CYCLE 1, WE# CONTROLLED WRITE CYCLE – CS# CONTROLLED tWC ADDRESS tAS CS# tAW tCW tAH tWP WE# tDW DATA I/O DATA VALID tDH WRITE CYCLE 2, CS# CONTROLLED White Electronic Designs Corp. reserves the right to change products or specifications without notice. October, 2002 Rev. 2 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WS1M8V-XCX ADVANCED* PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED 42.4 (1.670) ± 0.4 (0.016) 15.04 (0.592) ± 0.3 (0.012) 4.34 (0.171) ± 0.79 (0.031) PIN 1 IDENTIFIER 0.84 (0.033) ± 0.4 (0.014) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES ORDERING INFORMATION W S 1M8 V - XXX C X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: M = Military Screened -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C PACKAGE: C = 32 pin Ceramic 0.600" DIP (Package 300) ACCESS TIME (ns) LOW VOLTAGE SUPPLY 3.3V ±10% ORGANIZATION, two banks of 512K x 8 SRAM WHITE ELECTRONIC DESIGNS CORP. White Electronic Designs Corp. reserves the right to change products or specifications without notice. October, 2002 Rev. 2 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WS1M8V-25CMA
1. 物料型号: - 型号为WS1M8V-XCX,这是一款2x512Kx8 Dualithic™ SRAM。

2. 器件简介: - WS1M8V-XCX是一款双列直插式(DIP)的SRAM,具有32个引脚,采用先进工艺制造,支持3.3V电源供电,兼容TTL电平输入输出,并且具有低功耗CMOS的特性。

3. 引脚分配: - 引脚1至18为地址输入(A0-A17),引脚1/00-7为数据输入/输出,引脚CS#1-2为芯片选择信号,引脚WE#为写使能信号,引脚Vcc为+3.3V电源供电,引脚GND为地。

4. 参数特性: - 访问时间有17ns、20ns、25ns、35ns、45ns、55ns等不同规格。 - 支持商业、工业和军事温度范围。 - 电源电压为3.3V,低功耗CMOS设计,与TTL电平兼容。

5. 功能详解: - 该SRAM组织为两个512Kx8的存储区,CS#1和CS#2用于选择低512Kx8和高512Kx8,两者不能同时启用。

6. 应用信息: - 适用于需要高速访问和低功耗的存储应用,如高速缓存、内存扩展等。

7. 封装信息: - 封装为32引脚的陶瓷双列直插式封装(Package 300)。
WS1M8V-25CMA 价格&库存

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