WSF2816-39G2UCA

White Electronic Designs 128KX16 SRAM/512KX16 FLASH MODULE FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) Packaging • 66 pin, PGA Type, 1.075" square HIP, Hermetic Ceramic HIP (Package 400) • 68 lead, Hermetic CQFP (G2U), 22.4mm (0.880") square (Package 510) 3.56mm (0.140") height. Designed to fit JEDEC 68 lead 0.990” CQFJ footprint (FIGURE 2) 128Kx16 SRAM 512Kx16 5V FLASH Organized as 128Kx16 of SRAM and 512Kx16 of Flash Memory with separate Data Buses Both blocks of memory are User Configurable as 256Kx8 Low Power CMOS Commercial, Industrial and Military Temperature Ranges TTL Compatible Inputs and Outputs WSF2816-39XX Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Weight: WSF2816-39G2UX - 8 grams typical WSF2816-39H1X - 13 grams typical FLASH MEMORY FEATURES 100,000 Erase/Program Cycles Sector Architecture • 8 equal size sectors of 64K bytes each • Any combination of sectors can be concurrently erased. Also supports full chip erase 5 Volt Programming; 5V ± 10% Supply Embedded Erase and Program Algorithms Hardware Write Protection Note: For programming information refer to Flash Programming 4M5 Application Note. FIGURE1 – PIN CONFIGURATION FOR WSF2816-39H1X Top View 1 SD8 SD9 SD10 A13 A14 A15 A16 A18 SD0 SD1 SD2 11 22 12 SWE2# SCS2# GND SD11 A10 A11 A12 VCC SCS1# NC SD3 33 23 SD15 SD14 SD13 SD12 OE# A17 SWE1# SD7 SD6 SD5 SD4 FD8 FD9 FD10 A6 A7 NC A8 A9 FD0 FD1 FD2 44 34 VCC FCS2# FWE2# FD11 A3 A4 A5 FWE1# FCS1# GND FD3 55 45 FD15 FD14 FD13 FD12 A0 A1 A2 FD7 FD6 FD5 FD4 66 OE# A0-16 Pin Description FD0-15 SD0-15 A0-18 SWE1-2# SCS1-2# OE# VCC GND NC FWE1-2# FCS1-2# Flash Data Inputs/Outputs SRAM Data Inputs/Outputs Address Inputs SRAM Write Enable SRAM Chip Selects Output Enable Power Supply Ground Not Connected Flash Write Enable Flash Chip Select 56 Block Diagram S W E 1 # S CS 1 # S W E 2 # S CS 2 # F W E 1 # F CS 1 # F W E 2 # F CS 2 # 128K x 8 SRAM 128K x 8 SRAM 512K x 8 FLASH 512K x 8 FLASH 8 8 8 8 SD0-7 SD8-15 FD0-7 FD8-15 White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF2816-39XX FIGURE 2 – PIN CONFIGURATION FOR WSF2816-39G2UX Top View NC A0 A1 A2 A3 A4 A5 FCS1# GND FCS2# SWE1# A6 A7 A8 A9 A10 VCC Pin Description FD0-15 SD0-15 A0-18 SWE1-2# SCS1-2# OE# VCC GND NC FWE1-2# FCS1-2# Flash Data Inputs/Outputs SRAM Data Inputs/Outputs Address Inputs SRAM Write Enable SRAM Chip Selects Output Enable Power Supply Ground Not Connected Flash Write Enable Flash Chip Select 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SD0 SD1 SD2 SD3 SD4 SD5 SD6 SD7 GND SD8 SD9 SD10 SD11 SD12 SD13 SD14 SD15 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 FD0 FD1 FD2 FD3 FD4 FD5 FD6 FD7 GND FD8 FD9 FD10 FD11 FD12 FD13 FD14 FD15 Block Diagram S W E 1 # S CS 1 # OE# A0-16 128K x 8 SRAM 128K x 8 SRAM 512K x 8 FLASH 512K x 8 FLASH S W E 2 # S CS 2 # F W E 1 # F CS 1 # F W E 2 # F CS 2 # SCS1# OE# SCS2# A17 SWE3# FWE1# FWE2# A12 A13 A14 A15 A16 A18 A11 VCC NC NC 8 8 8 8 SD0-7 SD8-15 FD0-7 FD8-15 The White 68 lead G2U CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2U has the TCE and lead inspection advantage of the CQFP form. White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 2 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs ABSOLUTE MAXIMUM RATINGS Parameter Symbol Operating Temperature TA Storage Temperature TSTG Signal Voltage Relative to GND VG Junction Temperature TJ Supply Voltage VCC Parameter Flash Data Retention Flash Endurance (write/erase cycles) Min -55 -65 -0.5 -0.5 Max +125 +150 7.0 150 7.0 Unit °C °C V °C V SCS# H L L L OE# X L H X SWE# X H H L WSF2816-39XX SRAM TRUTH TABLE Mode Standby Read Read Write Data I/O High Z Data Out High Z Data In Power Standby Active Active Active CAPACITANCE 20 years 100,000 TA = +25°C Test OE# Capacitance WE# Capacitance CS# Capacitance Data I/O Capacitance Address Line Capacitance Symbol COE CWE CCS CI/O CAD Condition Max Unit VIN = 0V, f = 1.0MHz 50 pF VIN = 0V, f = 1.0MHz 20 pF VIN = 0V, f = 1.0MHz 20 pF VIN = 0V, f = 1.0MHz 20 pF VIN = 0V, f = 1.0MHz 50 pF NOTES: 1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VIH VIL Min 4.5 2.2 -0.5 Max 5.5 VCC + 0.3 +0.8 Unit V V V This parameter is guaranteed by design but not tested. DC CHARACTERISTICS VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C Parameter Input Leakage Current Output Leakage Current SRAM Operating Supply Current x 16 Mode Standby Current SRAM Output Low Voltage SRAM Output High Voltage Flash VCC Active Current for Read (1) Flash VCC Active Current for Program or Erase (2) Flash Output Low Voltage Flash Output High Voltage Flash Output High Voltage Flash Low VCC Lock Out Voltage Symbol ILI ILO ICCx16 ISB VOL VOH ICC1 ICC2 VOL VOH1 VOH2 VLKO Conditions VCC = 5.5, VIN = GND to VCC SCS# = VIH, OE# = VIH, VOUT = GND to VCC SCS# = VIL, OE# = FCS# = VIH, f = 5MHz, VCC = 5.5 FCS# = SCS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5 IOL = 8.0mA, VCC = 4.5 IOH = -4.0mA, VCC = 4.5 FCS# = VIL, OE# = SCS# = VIH FCS# = VIL, OE# = SCS# = VIH IOL = 8.0mA, VCC = 4.5 IOH = -2.5 mA, VCC = 4.5 IOH = -100 µA, VCC = 4.5 Min Max 10 10 325 20 0.4 120 140 0.45 0.85 x VCC VCC -0.4 3.2 Unit µA µA mA mA V V mA mA V V V V 2.4 NOTES: 1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz). The frequency component typically is less than 2mA/MHz, with OE# at VIH. 2. ICC active while Embedded Algorithm (program or erase) is in progress. 3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs SRAM AC CHARACTERISTICS VCC = 5.0V, -55°C ≤ TA ≤ +125°C Parameter Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable to Output Valid Chip Select to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z Symbol tRC tAA tOH tACS tOE tCLZ1 tOLZ1 tCHZ1 tOHZ1 -35 Min 35 0 35 20 3 0 20 20 Max 35 Unit ns ns ns ns ns ns ns ns ns Parameter Write Cycle Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write Write Enable to Output in High Z Data Hold from Write Time WSF2816-39XX SRAM AC CHARACTERISTICS VCC = 5.0V, -55°C ≤ TA ≤ +125°C Symbol tWC tCW tAW tDW tWP tAS tAH tOW1 tWHZ1 tDH -35 Min 35 25 25 20 25 0 0 4 0 Max Unit ns ns ns ns ns ns ns ns ns ns 20 1. This parameter is guaranteed by design but not tested. 1. This parameter is guaranteed by design but not tested. FIGURE 3 AC Test Circuit AC TEST CONDITIONS Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level Output Timing Reference Level Typ VIL = 0, VIH = 3.0 5 1.5 1.5 Unit V ns V V ≈ Notes: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75Ω. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF2816-39XX FIGURE 4 – SRAM TIMING WAVEFORM — READ CYCLE tRC ADDRESS tAA tRC ADDRESS SCS# tAA tOH DATA I/O PREVIOUS DATA VALID DATA VALID tACS tCLZ SOE# tCHZ READ CYCLE 1 (SCS# = OE# = VIL, SWE# = VIH) tOE tOLZ DATA I/O HIGH IMPEDANCE tOHZ DATA VALID READ CYCLE 2 (SWE# = VIH) FIGURE 5 – SRAM WRITE CYCLE — SWE# CONTROLLED tWC ADDRESS tAW tCW SCS# tAH tAS SWE# tWP tOW tWHZ tDW DATA VALID tDH DATA I/O WRITE CYCLE 1, SWE# CONTROLLED FIGURE 6 – SRAM WRITE CYCLE — SCS# CONTROLLED tWC ADDRESS tAS SCS# tAW tCW tAH tWP SWE# tDW DATA I/O DATA VALID tDH WRITE CYCLE 2, SCS# CONTROLLED White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs VCC = 5.0V, -55°C ≤ TA ≤ +125°C Parameter Write Cycle Time Chip Select Setup Time Write Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Chip Select Hold Time Write Enable Pulse Width High Duration of Byte Programming Operation (1) Sector Erase Time (2) Read Recovery Time Before Write VCC Set-up Time Chip Programming Time Output Enable Setup Time Output Enable Hold Time (1) Chip Erase Time NOTES: 1. Typical value for tWHWH1 is 7µs. 2. Typical value for tWHWH1 is 1sec. 3. Typical value for Chip Erase Time is 8sec. 4. For Toggle and Data# Polling. WSF2816-39XX FLASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, FWE# CONTROLLED Symbol tAVAV tELWL tWLWH tAVWL tDVWH tWHDX tWLAX tWHEH tWHWL tWHWH1 tWHWH2 tGHWL tWC tCS tWP tAS tDS tDH tAH tCH tWPH -90 Min 90 0 45 0 45 0 45 0 20 Max Unit ns ns ns ns ns ns ns ns ns µs sec µs µs sec ns ns sec 300 15 tVCS tOES tOEH 0 50 11 0 10 64 FLASH AC CHARACTERISTICS – READ ONLY OPERATIONS VCC = 5.0V, -55°C ≤ TA ≤ +125°C Parameter Read Cycle Time Address Access Time Chip Select Access Time OE# to Output Valid Chip Select to Output High Z (1) OE# High to Output High Z (1) Output Hold from Address, CS# or OE# Change, whichever is first 1. Guaranteed by design, not tested. Symbol tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX tRC tACC tCE tOE tDF tDF tOH -90 Min 90 Max 90 90 35 20 20 0 Unit ns ns ns ns ns ns ns White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs VCC = 5.0V, -55°C ≤ TA ≤ +125°C Parameter Write Cycle Time FWE# Setup Time FCS# Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time FWE# Hold From FWE# High FCS# Pulse Width High Duration Of Byte Programming Operation (1) Duration Of Erase Operation (2) Read Recovery Before Write Chip Programming Time Chip Erase Time (3) NOTES: 1. Typical value for tWHWH1 is 7µs. 2. Typical value for tWHWH1 is 1sec. 3. Typical value for Chip Erase Time is 8sec. WSF2816-39XX FLASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, FCS# CONTROLLED Symbol tAVAV tWLEL tELEH tAVEL tDVEH tEHDX tELAX tEHWH tEHEL tWHWH1 tWHWH2 tGHEL tWC tWS tCP tAS tDS tDH tAH tWH tCPH -90 Min 90 0 45 0 45 0 45 0 20 Max Unit ns ns ns ns ns ns ns ns ns µs sec ns sec sec 300 15 0 11 64 White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF2816-39XX FIGURE 7 – AC WAVEFORMS FOR FLASH MEMORY READ OPERATIONS tRC Addresses tACC FCS# tDF OE# tOE Addresses Stable FWE# tCE tOH High Z Outputs High Z Output Valid White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 8 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF2816-39XX FIGURE 8 – WRITE/ERASE/PROGRAM OPERATION, FLASH MEMORY FWE# CONTROLLED Data# Polling Addresses 5555H tWC FCS# tGHWL OE# tWP FWE# tCS tWPH tDH Data tDS tOH A0H PD tOE tDF tWHWH1 tAS PA tAH PA tRC D7# DOUT 5.0 V tCE NOTES: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. D7# is the output of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 9 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF2816-39XX FIGURE 9 – AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS FOR FLASH MEMORY tAS Addresses 5555H tAH 2AAAH 5555H 5555H 2AAAH SA FCS# tGHWL OE# tWP FWE# tWPH tCS Data tDS tDH AAH 55H 80H AAH 55H 10H/30H VCC tVCS Note: SA is the sector address for Sector Erase. White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 10 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF2816-39XX FIGURE 10 – AC WAVEFORMS FOR DATA# POLLING DURING EMBEDDED ALGORITHM OPERATIONS FOR FLASH MEMORY FCS# t CH t DF t OE OE# tOEH FWE# tCE t OH D7 tWHWH 1 or 2 D0-D6 D0-D6 = Invalid t OE D7 tWHWH 1 or 2 D7 D7 Valid Data High Z D0-D7 Valid Data D7# D7 = Valid Data High Z White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF2816-39XX FIGURE 11 – WRITE/ERASE/PROGRAM OPERATION FOR FLASH MEMORY, CS# CONTROLLED Data# Polling Addresses 5555H tWC FWE# tGHEL OE# tCP FCS# tWS tWHWH1 tAS PA tAH PA tCPH tDH Data tDS A0H PD D7# DOUT 5.0 V NOTES: 1. PA represents the address of the memory location to be programmed. 2. PD represents the data to be programmed at byte address. 3. D7# is the output of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates the last two bus cycles of a four bus cycle sequence. White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 12 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF2816-39XX PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 13 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF2816-39XX PACKAGE 510: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2U) The White 68 lead G2U CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2U has the TCE and lead inspection advantage of the CQFP form. 0.940" TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 14 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs ORDERING INFORMATION WSF2816-39XX W S F 2816 - 39 X X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: M = Military Screened I = Industrial C = Commercial -55°C to +125°C -40°C to +85°C 0°C to +70°C PACKAGE TYPE: H1 = 1.075" sq. Ceramic Hex In-line Package, HIP (Package 400) G2U = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 510) ACCESS TIME (ns) 39 = 35ns SRAM and 90ns FLASH 2Mbit of SRAM and 8Mbit of Flash Organization: 128K x 16 SRAM and 512K x 16 Flash Flash SRAM WHITE ELECTRONIC DESIGNS CORP. White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 15 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com