BT131-800T

Jiangsu Weida Semiconductor Co., Ltd. BT131 Series 1A Triacs DESCRIPTION: With low holding and latching current, BT131 Series triacs are especially recommended for use on middle and small resistance type power load. MAIN FEATURES: symbol value SOT-223-3L unit IT(RMS) 1 A VDRM/VRRM 600/800 V VTM ≤1.5 V SOT-89-3L SOT-223-2L TO-92 ABSOLUTE MAXIMUM RATINGS: Parameter Symbol Value Unit Tstg -40~150 ℃ Tj -40~125 ℃ Repetitive peak off-state voltage (Tj=25℃) VDRM 600/800 V Repetitive peak reverse voltage (Tj=25℃) VRRM 600/800 V RMS on-state current IT(RMS) 1 A ITSM 16 A I2t 1.28 A2s Ⅰ-Ⅱ-Ⅲ 50 Ⅳ 10 IGM 2 A PG(AV) 0.5 W PGM 5 W Storage junction temperature range Operating junction temperature range Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG=2×IGT) dI/dt Peak gate current Average gate power dissipation Peak gate power PRODUCT DATA SHEET 1 A/μs Rev.1.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BT131 Series 1A Triacs ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Parameter IGT Test Condition Ⅰ-Ⅱ-Ⅲ VD=12V, RL=33Ω MAX Ⅳ VGT T D 3 5 5 10 Ⅰ-Ⅱ-Ⅲ-Ⅳ VD=VDRM VGD Ⅰ-Ⅱ-Ⅲ-Ⅳ IH Tj=125℃I =100mA T RL=3.3kΩ IL IG=1.2IGT dV/dt Value Quadrant MIN MAX Unit mA 1.3 V 0.2 V 5 7 5 5 10 20 20 50 V/µs Value Unit 1.5 V 5 µA 0.5 mA Value Unit TO-92 60 ℃/W SOT-89/SOT-223 SOT-223-2L 31 ℃/W Ⅰ-Ⅲ-Ⅳ Ⅱ VD=0.66×VDRM Tj=125℃ Gate open MAX MIN mA mA STATIC CHARACTERISTICS Symbol VTM Test Condition ITM=1.4A IDRM IRRM tp=380μs Tj=25℃ MAX Tj=25℃ VDRM= VRRM MAX Tj=125℃ THERMAL RESISTANCES Symbol Rth(j-c) Test Condition junction to case(AC) PRODUCT DATA SHEET 2 Rev.1.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BT131 Series 1A Triacs ORDERING INFORMATION BT 131–600 D VDRM、VRRM: Triacs IT(RMS):1A 600：600V T：IGT1-3≤3mA、IGT4≤5mA 800：800V D：IGT1-3≤5mA、IGT4≤10mA Cycle Code W WD:WeiDa X：year ID A year 2018 Y：Code code week A 1 B 2 C 3 D 4 E 5 F 6 G 7 H 8 I 9 J 10 K 11 L 12 M 13 PRODUCT DATA SHEET B 2019 code N O P Q R S T U V W X Y Z D C 2020 X Y D 2021 week 14 15 16 17 18 19 20 21 22 23 24 25 26 E 2022 code a b c d e f g h i j k l m 3 F 2023 week 27 28 29 30 31 32 33 34 35 36 37 38 39 G 2024 code n o p q r s t u v w x y z … … week 40 41 42 43 44 45 46 47 48 49 50 51 52、53 Rev.1.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BT131 Series 1A Triacs PACKAGE MECHANICAL DATA Dimensions Ref. A A1 B B1 C D E F F1 G H J K Ref. A b b1 c D D1 E E1 e e1 L SOT-89-3L PRODUCT DATA SHEET 4 Min. 1.5 0.01 2.9 0.6 0.22 6.3 3.3 0.7 1.5 6.7 0.8 Millimeters Typ. Max. 1.6 1.8 0.06 0.10 3.0 3.1 0.7 0.8 0.25 0.32 6.5 6.7 3.5 3.7 4.6 6.8 2.3 0.9 1.1 1.75 2.0 7.0 7.3 0.9 1.0 Min. 0.059 0.001 0.114 0.024 0.009 0.248 0.130 0.252 0.028 0.059 0.264 0.031 Dimensions Millimeters Min. Typ. Max. Min. 1.4 1.6 0.055 0.35 0.52 0.013 0.4 0.58 0.016 0.35 0.44 0.014 4.4 4.6 0.173 1.55 2.35 2.55 0.091 3.94 4.25 0.155 1.500 3.000 0.9 1.1 0.035 Inches Typ. 0.063 0.002 0.118 0.028 0.010 0.256 0.138 0.181 0.091 0.035 0.069 0.276 0.035 Inches Typ. Max. 0.071 0.004 0.122 0.031 0.013 0.264 0.146 0.043 0.079 0.287 0.039 Max. 0.063 0.197 0.023 0.017 0.181 0.061 0.102 0.167 0.060 0.118 0.047 Rev.1.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BT131 Series 1A Triacs Dimensions Ref. A B C D E F G H J K N P V PRODUCT DATA SHEET 5 Min. 4.45 4.32 3.18 0.407 0.6 0.36 12.7 2.04 1.86 - Millimeters Typ. Max. 4.6 5.2 4.6 5.33 3.55 4.19 0.533 0.8 1.1 1.27 2.3 0.38 0.5 15 2.3 2.66 2.06 4.3 Min. 0.175 0.17 0.125 0.016 0.024 0.014 0.5 0.08 0.073 - Inches Typ. 0.181 0.181 0.14 0 0.043 0.05 0.091 0.015 0.091 Max. 0.205 0.21 0.165 0.021 0.031 0.02 0.591 0.105 0.081 0.169 Rev.1.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BT131 Series 1A Triacs FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature FIG.3: Surge peak on-state current versus number of cycles FIG.4:On-state characteristics (maximum values) FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp