WCR1K2N65TG

WCR1K2N65 series WCR1K2N65T/TF/TG 650V N-Channel Super Junction MOSFET Description Features The WCR1K2N65 series is new generation of high voltage MOSFET family that is utilizing an advanced charge  700V@TJ=150°C  Typ.RDS(on)=1.05Ω balance mechanism for outstanding low on-resistance and lower gate charge performance.This advanced technology has been tailored to minimize conduction loss, provide  Low gate charge  100% avalanche tested  100% Rg tested superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. This device is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Order Information Device Package WCR1K2N65T-3/T WCR1K2N65TF-3/T WCR1K2N65TG-3/TR G D S G D G S D TO-220 Marking WCR1K2N65TYW TO-220F TO-252E-2L Units/Tube (1) WCR1K2N65TFYW 50 (2) WCR1K2N65TGYW Units/Real 50 (3) 3000 S Note 1: WCR1K2N65T=Device code ;Y=Year ;W=Week (A~z); TO-220F TO-220 TO-252 Note 2: WCR1K2N65TF=Device code ;Y=Year ;W=Week (A~z); Note 3: WCR1K2N65TG=Device code ;Y=Year ;W=Week (A~z); Absolution Maximum RatingsTA=250C unless otherwise noted Parameter WCR1K2N65T Symbol WCR1K2N65TF WCR1K2N65TG Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current A TC=25°C TC=100°C Pulsed Drain Current B Single Pulsed Avalanche Energy Power Dissipation TC=25°C Derateabove 25°C Operating and Storage Temperature Range Lead Temperature ID Unit V 4.0 3 2.5 1.9 A IDM 16 A EAS 41 mJ PD 50 30 W 0.5 0.22 W/°C TJ,TSTG -55~150 °C TL 260 °C Thermal Resistance Ratings Maximum Junction-to-Ambient Rth(ch-A) 62 D 80 Maximum Junction-to-Case Rth(ch-c) 2.5 4.6 PRODUCT DATA SHEET 1 °C/W Rev.144.0 2022 Jun. WCR1K2N65 series Electronics Characteristics (TA=25 Parameter o C, unless otherwise noted) Symbol Test Conditions Min 650 Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA,TJ=25°C Zero Gate Voltage Drain Current IDSS VDS =650V, VGS = 0V,TJ=25°C Gate-to-source Leakage Current IGSS VDS = 0 V, VGS =±30V V 1 uA ±100 nA 3 4 V 1.05 1.22 Ω ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance VGS(TH) RDS(on) C VGS = VDS, ID = 150uA VGS = 10V, ID = 2.6A 2 DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Gate resistance Rg VGS = 0 V, f = 1.0 MHz,VDS = 400 V VGS = 10 V,VDS = 400 V, ID = 5.2A VGS=0V ,F=1MHZ,drain open 272 8.3 pF 0.3 10.4 2.2 nC 5.1 Ω 10 SWITCHING CHARACTERISTICS Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf 8.5 VGS = 10V, VDS = 400 V, ID = 2.6A,RG=10 Ω 12.7 ns 22.4 16.7 Drain to Source Diode Characteristics and Maximum Ratings Forward Voltage VSD VGS = 0 V, IS = 5.2A Body-Diode Continuous Current IS 5.2 A Body-Diode Pulsed Current ISM 20.8 A Body Diode Reverse Recovery Time Trr 171 nS Body Diode Reverse Recovery Charge Qrr 0.75 uC Peak reverse recovery Current Irrm 8.8 A IF=2.6A,dI/dt=100A/us,VDS=400V 1.5 V NOTES: A. Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75 B. L=100mH, IAS=0.9A, VDD=50V, Starting TJ=25℃ C. Pulse Test: Pulse width≤300us, Duty Cycle ≤2% sensitively Independent of Operating Temperature Typical Characteristics D. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. PRODUCT DATA SHEET 2 Rev.144.0 2022 Jun. WCR1K2N65 series o Typical Characteristics (T A=25 C, unless otherwise noted) 10 IDS -Drian to Source Current(A) ID -Drain-to-Source Current (A) 10 VGS=10V 8 VGS=7.0V 6 VGS=5.5V 4 VGS=6.0V 2 VGS=5.0V 0 0 5 10 15 VDS=20V 8 6 o T=150 C 4 2 0 20 o T=25 C 0 2 VDS-Drain-to-Source Voltage (V) Output characteristics VGS=6.0V RDSON-On-Resistance Normalized RDS(ON)-Resistance (Ω) 8 10 3.0 1.6 VGS=10V 1.2 1 2 3 4 5 6 7 VGS=10V 2.5 ID=2.6A 2.0 1.5 1.0 0.5 0.0 -50 8 IDS-Drian to Source Current(A) 50 100 150 o On-Resistance vs. Drain current On-Resistance vs. Junction temperature Gate Threshold Normalized 1.4 ID=250uA 1.1 1.0 0.9 0.8 -50 0 Junction Temperature ( C) 1.2 BVDSS Normalized 6 Transfer characteristics 2.0 0.8 4 VGS -Gate to Source Voltage(V) 0 50 100 1.0 0.8 0.6 0.4 -50 150 0 50 100 150 o o Junction Temperature ( C) Junction Temperature ( C) Breakdown Voltage vs. Junction temperature PRODUCT DATA SHEET ID=250uA 1.2 Threshold voltage vs. Junction temperature 3 Rev.144.0 2022 Jun. WCR1K2N65 series 1.5 8 o T=150 C o T=25 C Eoss(uJ) ISD-Source to Drain Current (A) 10 6 4 1.0 Eoss 0.5 2 0.4 0.6 0.8 1.0 1.2 0.0 1.4 0 100 200 VSD-Source to Drain Voltage (V) 300 400 500 VDS(V) Body diode forward voltage Cossstored Energy 10 10000 VGS=0 f=1MHz 1000 8 C-Capacitance(pF) Ciss 10 Vgs(V) 100 Coss 6 4 1 Crss 0.1 0.01 0 100 2 VDD=400V,ID=5.2A 200 300 0 400 VDS-Source to Source Voltage(V) 0 4 8 12 Total gate charge Qg(nC) Capacitance Gate charge Characteristics 60 PTOT(W) 40 TO-220 TO-252 20 TO-200F 0 0 50 100 150 o Tcase( C) Power dissipation PRODUCT DATA SHEET 4 Rev.144.0 2022 Jun. WCR1K2N65 series 100 100 10us Limit by Rdson* 100us 1 1ms 0.1 10ms TJ(MAX)=150C TC=25C Bvdss Limit 10 ID- Drain Current (A) ID- Drain Current (A) 10 Limit by Rdson* 100us 1 1ms 0.1 TC=25C DC 1 10 100 DC Single Pulse Single Pulse 0.01 10ms TJ(MAX)=150C 0.01 1 1000 Bvdss Limit 10 100 1000 VDS- Drain Source Voltage (V) VDS- Drain Source Voltage (V) TO-220&TO-252E-2 Safe operating area TO-220F Safe operating area Normalized Effective Transient Thermal Impedence 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pluse 1 0.1 0.01 1E-3 1E-5 single pulse 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (s) TO-220&TO-252E-2 Transient thermal response(Junction to case) Normalized Effective Transient Thermal Impedance 10 In descending order D=0.5, 0.3,0.1, 0.05,0.02, 0.01, single pluse 1 0.1 0.01 Single pulse 1E-3 1E-4 1E-5 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (s) TO-220F Transient thermal response(Junction to case) PRODUCT DATA SHEET 5 Rev.144.0 2022 Jun. 100 WCR1K2N65 series PACKAGE OUTLINE DIMENSIONS TO–220F–3L E A θ A1 H1 Q A2 ΦP A4 L2 D1 D θ θ L1 θ b1 D2 L A3 c e b SIDE VIEW TOP VIEW Symbol BOTTOM VIEW Dimensions in Millimeters Min. Typ. Max. A 4.50 4.72 4.90 A1 2.45 2.56 2.65 0.72Ref A2 A3 2.68 2.78 2.88 A4 - - 0.45 b 0.70 0.80 0.90 b1 1.18 1.28 1.38 c 0.45 0.52 0.60 D 15.67 15.87 16.07 D1 15.55 15.75 15.95 E 9.96 10.16 10.36 2.45BSC e H1 6.48 6.68 6.88 L 12.68 12.98 13.28 L1 - - 3.50 2.54BSC L2 φP 3.08 3.18 3.28 Q 3.20 - 3.40 θ 3° 5° 7° PRODUCT DATA SHEET 6 Rev.144.0 2022 Jun. WCR1K2N65 series PACKAGE OUTLINE DIMENSIONS TO–220–3L E A A1 H1 Q Φp θ1 D1 D L2 D2 θ1 L L1 b1 E1 b A2 e c e1 TOP VIEW Symbol SIDE VIEW BOTTOM VIEW Dimensions in Millimeters Min. Typ. Max. A 4.40 4.50 4.60 A1 1.27 1.30 1.33 A2 2.30 2.40 2.50 b 0.70 0.80 0.90 b1 1.30 - 1.37 c 0.45 0.50 0.60 D 15.30 15.70 16.10 D1 9.10 9.20 9.30 D2 12.90 13.10 13.30 E 9.70 9.90 10.20 E1 7.70 7.90 8.10 e 2.45Ref e1 5.08Ref H1 6.30 6.50 6.70 L 12.78 13.08 13.38 L1 - - 3.50 L2 4.06Ref ∅P 3.55 3.60 3.65 Q 2.73 - 2.87 θ1 3° 5° 7° PRODUCT DATA SHEET 7 Rev.144.0 2022 Jun. WCR1K2N65 series PACKAGE OUTLINE DIMENSIONS TO–252E–2L E b3 E1 A L4 H D D1 c2 A1 L1 F L b2 b c e TOP VIEW Symbol SIDE VIEW SIDE VIEW Dimensions in Millimeters Min. Typ. Max. A 2.20 2.30 2.40 A1 0 0.08 0.15 b 0.50 0.60 0.70 b2 0.60 0.75 0.90 b3 5.20 5.35 5.50 c2 0.45 0.50 0.55 c 0.51Ref D 5.40 5.60 5.80 D1 4.57 - - E 6.40 6.60 6.80 E1 3.81 - - e 2.30Ref F 0.70 0.80 0.90 H 9.40 9.80 10.20 L 1.40 1.59 1.77 L1 2.40 2.70 3.00 L4 0.80 1.00 1.20 PRODUCT DATA SHEET 8 Rev.144.0 2022 Jun. WCR1K2N65 series TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm 16mm P1 Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Pin1 Quadrant Q1 Q2 Q3 PRODUCT DATA SHEET 9 Q4 Rev.144.0 2022 Jun.