1N4148/1N4448 Surface Mount Switching Diodes
Features: *Silicon Epitaxial Planner Diode *Fast Switching Diodes *500 mW Power Dissipation Mechanical Data: *Case : DO-35 Glass Case *Weight : Approx 0.13 gram
SMALL SIGNAL SWITCHING DIODES 150 m AMPERES 100 VOLTS
DO-35
DO-35 Outline Dimensions
Unit:mm
C D
A
B
A
A DIM DO-35 Min 26.0 Max Min -
B Max 4.20 Min -
C Max 0.55 Min -
D Max 2.0
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WEITRON
1N4148/1N4448
Maximum Ratings
Characteristic
Non-Repetitive Peak Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Output Current (1) Non-Repetitive Peak Forward Surge Current @t=1.0us Power Dissipation Thermal Resistance Junction to Ambient Operating and Strorage Temperature Range
( TA=25 C Unless otherwise noted)
Symbol
VRM VPWM VRWM VR IO IFSM Pd R θJA T J ,T S T G
1N4148/ 1N4448
100 75 150 2.0 500 300 -65 to +175
Unit
V V mA A mW K/W C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage IR= 100 ua Forward Voltage IF=10 mA 1N4148 1N4448 IF=5 mA IF=100 mA Leakage C urrent VR=20V VR=75V VR=75V, Tj=150 C Junction Capacitance Reverse Recovery Time IF=10 mA, IR=1mA, VR=6V, RL=100 Ω
( TA=25 C Unless otherwise noted) Symbol
V(BR)R
Min
100
Max
-
Unit
V
VF
0.62
1.0 0.72 1.0 25 5 50 4 4
V
IR
-
nA
Cj Trr
PF nS
Note: 1.Valid Provided that device Terminals are Kept at Ambient Temperature.
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WEITRON
1N4148/1N4448
60 Ω
D.U.T. V R F =2V 2nF 5K Ω VO
nA 104
103
RECITIFICATION EFFICIENCY MEASUREMENT CIRCUIT
102
10 VR=20V 1 0 100 200 C
FIG 1, LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE
A
100
V =tp /T T =1/fp
IFRM 10
n=0
0.1
tp
IF R M
T
1
0.2 0.5
0.1 10-4 10-3 10-2 10-4 tp 10-1 1 10S
FIG 2, ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
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WEITRON
1N4148/1N4448
mA 103
104 TJ=25 C f=1KHz
Ω
102 IF 10 TJ=100 C TJ=25 C TF
10
3
102 1 10-1 10-2 10
0
1 VF
2V
1
10-2
10-1
1
10 IF
102
mA
FIG 3, FORWARD CHARACTERISTICS
FIG 4, DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT
mW 1000 900 800 Ptot 700 600 500 400 300 200 100 0 0 100 TA 200 C
1.1
TJ=25 C f=1MHz
Ctot(VR) Ctot(DV)
1.0 0.9 0.8 0.7 0 2 4 6 8
VR
10 V
FIG 5, ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE
FIG 6, RELATIVE CAPACITANCE VERSUS VOLTAGE
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WEITRON
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