2N4403

2N4403 General Purpose Transistors PNP Silicon 2 BASE 1 EMITTER COLLECTOR 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg 2N4403 -40 -40 -5.0 -600 -625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc mW C C DEVICE MARKING 2N4403=2N4403 ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (1) (IC= -1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -0.1 mAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -0.1 mAdc, IC=0) Base Cutoff Current (VCB= -35 Vdc, IE=0) Collect Cutoff Current(VCE = -35 Vdc, I B =0) 1. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO I CEO Min -40 -40 -5.0 Max -0.1 -0.1 Unit Vdc Vdc Vdc uAdc uAdc WEITRON http://www.weitron.com.tw 2N4403 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC= -0.1 mAdc, VCE=-1.0 Vdc) (IC= -1.0 mAdc, VCE=-1.0 Vdc) (IC= -10 mAdc, VCE=-1.0 Vdc) (IC= -150 mAdc, VCE=-2.0 Vdc) (1) (IC= -500 mAdc, VCE=-2.0 Vdc) (1) Collector-Emitter Saturation Voltage (1) (IC= -150 mAdc, IB= -15 mAdc) (IC=- 500 mAdc, IB= -50 mAdc) Base-Emitter Saturation Voltage (1) (IC= -150 mAdc, IB= -15 mAdc) (IC= -500 mAdc, IB=- 50 mAdc) hFE 30 60 100 100 20 -0.75 300 -0.4 -0.75 -0.95 -1.3 - VCE(sat) Vdc VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC= -20 mAdc, VCE=-10 Vdc, f=100 MHz) Collector-Base Capacitance (IE= 0, VCB=-10 Vdc, f=1.0MHz) Emitter-Base Capacitance (IC= 0, VEB=-0.5 Vdc, f=1.0MHz) Input Impedance (IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz) Voltage Feedback Ratio (IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz) Small-Signal Current Gain (IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz) Output Admittance (IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz) fT Ccb Ceb hie hre hfe hoe 200 1.5k 0.1 60 1.0 8.5 30 15k 8.0 500 100 MHz pF pF ohms I I 10 -4 umhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC= -30 Vdc, VBE= +2.0 Adc, IC= -150 mAdc,IB1=-15mAdc) (VCC= -30 Vdc, IC= -150 mAdc, IB1= -15 mAdc,I B2=-15mAdc) td tr ts tf 15 20 225 30 ns 1. Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% - WEITRON http://www.weitron.com.tw 2N4403 SWITCHING TIME EQUIVALENT TEST CIRCUIT - 30 V < 2 ns +2 V 0 - 16 V 1.0 kΩ 10 to 100 µs, DUTY CYCLE = 2% CS * < 10 pF 200 Ω +14 V 0 -16 V < 20 ns 1.0 kΩ 1.0 to 100 µs, DUTY CYCLE = 2% - 30 V 200 Ω CS * < 10 pF + 4.0 V S cope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope FIG 1. Turn-On Time FIG 2. Turn-Off Time 30 20 CAPACITANCE (pF) Ceb Q, CHARGE (nC) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 VCC = 30 V IC/IB = 10 10 7.0 5.0 Ccb QT QA 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 0.1 10 20 30 50 70 100 200 IC , COLLECTOR CURRENT (mA) 300 500 FIG 3. Capacitances FIG 4. Charge Data 100 70 50 30 20 tr , RISE TIME (ns) t, TIME (ns) tr @ V CC = 30 V tr @ V CC = 10 V td @ V BE(off) = 2 V td @ V BE(off) = 0 IC/IB = 10 100 70 50 30 20 VCC = 30 V IC/IB = 10 10 7.0 5.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) FIG5. Turn-On Time FIG 6. Rise Time WEITRON http://www.weitron.com.tw 2N4403 200 IC/IB = 10 ts4 , STORAGE TIME (ns) 8 100 70 50 IB1 = IB2 ts4= ts - 1/8 tf 30 20 IC/IB = 20 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS= 430Ω IC = 500µA, RS = 560Ω IC = 50 µA, RS = 2.7 k Ω IC = 100µA, RS = 1.6 k Ω 10 6 4 2 R S = OPTIMUM SOURCE RESISTANCE 10 20 30 50 70 100 200 300 500 IC , COLLECTOR CURRENT (mA) 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f , FREQUENCY (kHz) 10 20 50 100 FIG. 7 Storage Time 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) hfe , CURRENT GAIN 6 1000 700 500 IC = 50 µA 100 µA 500 µA 1.0 mA 300 200 FIG. 8 Frequency Effects 4 100 70 50 2N4403 UNIT 1 2N4403 UNIT 2 2 0 50 100 200 500 1 k 2 k 5 k 10 k 20 k R S , SOURCE RESIST ANCE (OHMS) 50 k 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 FIG. 9 Source Resistance Effects 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 IC , COLLECTOR CURRENT (mAdc) FIG.10 Current Gain hre , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 100 k h ie , INPUT IMPEDANCE (OHMS) 50 k 20 k 10 k 5k 2k 1k 500 200 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 2N4403 UNIT 1 2N4403 UNIT 2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC , COLLECTOR CURRENT (mAdc) IC , COLLECTOR CURRENT (mAdc) FIG. 11 Input Impedance FIG. 12 Voltage Feedback Ratio WEITRON http://www.weitron.com.tw 2N4403 500 hoe , OUTPUT ADMITTANCE ( mhos) 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 IC, COLLECTOR CURRENT (mAdc) FIG. 13 Output Admittance 3.0 hFE , NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125 C 25 C 1.0 0.7 0.5 0.3 0.2 0.1 - 55 C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC , COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 FIG. 14 DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 FIG. 15 Collector Saturation Region WEITRON http://www.weitron.com.tw 2N4403 1.0 0.8 VOLTAGE (VOLTS) TJ = 25 C VBE(s at) @ I C/IB = 10 COEFFICIENT (mV/ C) VBE(s at) @ V CE = 10 V 0.5 0 0.5 1.0 1.5 2.0 VCE (sat) @ IC /IB = 10 0 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 2.5 0.1 0.2 VS for VBE 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 VC for VCE(sat ) 0.6 0.4 0.2 FIG. 16 "On" Voltages FIG. 17 Temperature Coefficients WEITRON http://www.weitron.com.tw 2N4403 TO-92 Outline Dimensions E unit:mm TO-92 H C J K G Dim A B C D E G H J K L Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A