2N7002_09

WEITRON Small Signal MOSFET N-Channel P b Lead(Pb)-Free 3 DRAIN 1 GATE 2 SOURCE 2N7002 3 1 2 SOT-23 Value 60 60 ±115 ±75 ±800 Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Drain Source Voltage Drain Gate Voltage(RGS = 1.0MΩ) Drain Current Continuous TC = 25°C (Note 1.) – Con tinuous 100°C (Note 1.) TC= Pulsed (Note2.) Gate Source Voltage Con tinuous Non–repe titive (tp≤ 50µs) Symbol VDSS VDGR ID ID Unit V V mA IDM VGS VGSM ±20 ±40 V V Thermal Characteristics (TA=25°C Unless Otherwise Specified) Characteristic Total Device Dissipation FR–5 Board (Note3.) TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note4.)TA =25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol PD RθJA PD RθJA TJ Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 -55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C °C Note : 1.The Power Dissipation of thepackage may result in a lower continuous drain current. 2.PulseTest: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%. 3.FR-5 = 1.0 x 0.75 x 0.062 in. 4.Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. Device Marking 2N7002 = 702 WEITRON http://www.weitron.com.tw 1/4 Rev.B 08-Jul-09 2N7002 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage VGS = 0, ID = 10µA Zero Gate Voltage Drain Current VGS = 0, VDS = 6V Gate–Body Leakage Current Forward VGS = 20V Gate–Body Leakage Current, Reverse VGS = –20 V T J = 25 ° C T J = 125 ° C V (BR)DSS I DSS I GSSF I GSSR 60 – – – – – – – – – – 1.0 500 100 -100 V µA nA nA ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage VDS = VGS, ID =250µA On–State Drain Current VDS ≥ 2.0 VDS(on), VGS = 10V Static Drain–Source On–State Voltage VGS = 10 V , I D = 500 mA VGS = 5.0 V , I D = 50 mA Static Drain–Source On–State Resistance VGS = 10 V, I D = 500 mA VGS = 5.0 V , I D = 50 mA Forward Transconductance VDS ≥ 2.0 V DS(on) , I D = 200 mA T C = 25 ° C T C = 125 ° C T C = 2 5° C T C = 125 ° C V GS(th) I D(on) V DS(on) 1.0 500 1.6 – 2 – V mA – – – – – – 80 – – 1.4 – 1.8 – – 3.75 0.375 7.5 13.5 7.5 13.5 – V rDS(on) gFS mS DYNAMIC CHARACTERISTICS Input Capacitance V DS = 25 V , VGS = 0, f = 1.0 MHz Output Capacitance V DS = 25 Vdc, V GS = 0, f = 1.0 MHz Reverse Transfer Capacitance VDS = 25 V , VGS = 0, f = 1.0 MHz C iss C oss C rs s – – – 17 10 2.5 50 25 5.0 pF pF pF SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Turn–O Delay Time V DD = 25 V , I D 500 mA , R G = 25 Ω, R L = 50 Ω, V gen = 10 V td(on) td(o ) – – 7 11 20 40 ns ns BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage I S = 115 mA , VGS = 0 V Source Current Continuous Body Diode Source Current Pulsed 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. V SD IS I SM – – – – – – –1.5 –115 –800 V mA mA WEITRON http://www.weitron.com.tw 2/4 Rev.B 08-Jul-09 2N7002 2.0 1.8 ID , DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 7V 6V 5V 4V 3V 9.0 10 TA=25 C ID , DRAIN CURRENT (AMPS) VGS=10V 9V 8V 1.0 VDS=10V 0.8 -55 C 25 C 125 C 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VDS, DRAIN SOURSE VOLTAGE (VOLTS) FIG.1 Ohmic Region VGS, GATE SOURCE VOLTAGE (VOLTS) FIG.2 Transfer Characteristics rDS(ON), STATIC DRAIN-SOURSE ON -RESISTANCE (NORMALIZED) VGS (th), THRESHOLD VOLTAGE (NORMALIZED) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +80 +100 +140 VGS = 10V ID=200mA 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.8 0.75 0.7 -60 -20 +20 +80 +100 +140 VDS = VGS ID = 1.0mA T,TEMPERATURE ( C) FIG.3 Temperature Versus Static Drain-Sourse On-Resistance T,TEMPERATURE ( C) FIG.4 Temperature Versus Gate Threshold Voltage WEITRON http://www.weitron.com.tw 3/4 Rev.B 08-Jul-09 2N7002 SOT-23 Outline Dimension SOT-23 A TOP VIEW B C D E G H K L J M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 4/4 Rev.B 08-Jul-09