2SA1036K

2SA1036K PNP General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature *PD MAX. Must not be exceeded. Symbol VCEO VCBO VEBO IC PD Tj Tstg Value -32 -40 -5.0 -500* 0.2 +150 -55 to +150 Unit V V V mA mW °C °C Device Marking 2SA1036KP=HP , 2SA1036KQ=HQ , 2SA1036KR=HR WEITRON http://www.weitron.com.tw 1/4 02-Mar-06 2SA1036K ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage IC = -1mA, IE = 0A Collector-Base Breakdown Voltage IC = -100µA, IB = 0A Emitter-Base Breakdown Voltage IE= 100µA, IC=0 Collector Cutoff Current VCB = -20V, IC = 0A Emitter Cutoff Current VEB = -4V, IC = 0A Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min -32 -40 Typ - Max - Unit V V -5.0 - - 1.0 1.0 V µA µA ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = -100mA, IB = -10mA DC Current Transfer Ration VCE = -3V, IC = -10mA VCE(sat) -0.4 V hFE 82 - 390 V SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE=-5V, IE=20mA, f=100MHz Output Capacitance VCB = -10V, IE = 0A, f = 1.0MHz fT Cob 200 7 MHz pF CLASSIFICATION hFE Rank Range P 82-180 Q 120-270 R 180-390 WEITRON http://www.weitron.com.tw 2/4 02-Mar-06 2SA1036K Electrical characteristic curves -500 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) -1mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA COLLECTOR CURRENT : IC (mA) -200 Ta=100 C 25 C -100 -55 C -50 -20 -10 -5 -2 -1 -0.5 VCE=-3V -100 Ta=25 C -0.9mA -500 Ta=25 C -5.0mA -4.5mA -4.0mA -3.5mA -3.0mA -2.5mA -2.0mA -1.5mA -1.0mA -0.5mA -80 -400 -60 -300 -40 -200 -20 -100 -0.2 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 0 0 -1 -2 -3 -4 IB=0A -5 0 IB=0A 0 -5 -10 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propogation 1000 500 Fig.2 Grounded emitter output characteristics (I) 1000 500 Fig.3 Ground emitter output characteristics (ΙΙ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25 C Ta=25 C VCE=-3V -1 -0.5 -0.2 -0.1 -0.05 -0.02 -1 -2 IC/IB=50 20 10 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 200 100 50 VCE=-5V -3V -1V Ta=100 C 200 100 50 25 C -55 C 20 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 20 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 -5 -10 -20 -50 -100 -200 -500 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs collector current (Ι) Fig.5 DC current gain vs. collector current (ΙΙ) Ta=25 C VCE=-5V Fig.6 Collector emitter saturation voltage vs. collector current (Ι) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) -0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY : fT (MHz) -1.0 lC/lB=10 -0.3 -0.2 -0.1 1000 500 100 50 20 10 5 2 -0.5 Ta=25 C f=1MHz IE=0A IC=0A Ta=100 C 25 C -0.05 -55 C 200 100 50 0.5 1 2 5 10 20 50 -0.03 -0.02 -0.01 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 -1 -2 -5 -10 -20 -50 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (ΙΙ ) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collectur output capacitance vs. collector-base voltage. Emitter input capacitance vs. emitter -base voltage COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) WEITRON http://www.weitron.com.tw 3/4 02-Mar-06 2SA1036K SOT-23 Outline Dimension A SOT-23 Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 TOP VIEW D E G H B C K J L M WEITRON http://www.weitron.com.tw 4/4 02-Mar-06