2SA1576A

2SA1576A PNP General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-323 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Value -60 -50 -6.0 -150 200 +150 -55 to +150 Unit V V V mA mW °C °C SOT-323 Outline Dimension A Unit:mm TOP VIEW D E G H B C K L J M Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 WEITRON http://www.weitron.com.tw 1/3 21-Jan-09 2SA1576A ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC = -50µA, I E = 0A Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0A Emitter-Base Breakdown Voltage IE= -50µA, IC = 0A Collector Cuto Current VCB = -60V, IE = 0A Emitter Cuto Current VEB = -6V, IC = 0A Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -60 -50 -6.0 - Typ - Max -0.1 -0.1 Unit V V V µA µA ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = -50mA, I B = -5mA DC Current Transfer Ration VCE = -6V, IC = -1mA VCE(sat) hFE 120 -0.5 560 V SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE=-12V, I C = -2mA, f=30MHz Collector output capacitane VCB=-12V, I E = 0mA, f=1MHz fT Cob 140 4 5 MHz pF CLASSIFICATION hFE Rank Range Marking Q 120-270 FQ R 180-390 FR S 270-560 FS WEITRON http://www.weitron.com.tw 2/3 21-Jan-09 2SA1576A Electrical characteristic curves −50 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −20 −10 −5 −2 −1 −0.5 −0.2 −0.1 Ta=100˚C 25˚C −40˚C VCE=−6V −10 −35.0 Ta=25˚C −31.5 −28.0 −24.5 −100 Ta=25˚C −500 −450 −400 −350 −300 −8 −80 −6 −21.0 −17.5 −60 −250 −200 −4 −14.0 −10.5 −40 −150 −100 −2 −7.0 −3.5µA −20 −50µA IB=0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0 −0.4 −0.8 −1.2 −1.6 IB=0 −2.0 0 −1 −2 −3 −4 −5 COLLECTOR TO MITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics (I) Fig.3 Grounded emitter output characteristics (II) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 Ta=25˚C VCE=−5V −3V −1V DC CURRENT GAIN : hFE 500 Ta=100˚C 25˚C −1 Ta=25˚C DC CURRENT GAIN : hFE −0.5 200 200 −40˚C 100 −0.2 IC/IB=50 −0.1 20 10 100 50 50 VCE=−6V −5 −10 −20 −50 −100 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) Fig.5 DC current gain vs. collector current (II) Fig.6 Collector-emitter saturation voltage vs. collector current (I) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −1 1000 TRANSITION FREQUENCY : fT (MHz) Ta=25˚C VCE=−12V 20 Cib 10 −0.5 500 Ta=25˚C f=1MHz IE=0A IC=0A Co b −0.2 Ta=100˚C 25˚C −40˚C 200 100 5 −0.1 2 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 50 0.5 1 2 5 10 20 50 100 −0.5 −1 −2 −5 −10 −20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current (II) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage WEITRON http://www.weitron.com.tw 3/3 21-Jan-09