2SA1832
PNP TRANSISTOR
P b Lead(Pb)-Free
FEATURES: * High voltage and high current * Excellent hFE linearity * Complementary to 2SC4738
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter Symbol VCBO VCEO VEBO IC PD RθJA TJ Tstg Value -50 -50 -5 -150 100 125 -55 to +125 -55 to +125 Units V V V mA mW ℃/W ℃ ℃
3 1 2
SOT-523(SC-75)
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO* VEBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions MI N -50 -50 -5 -100 -100 120 400 -0.3 80 4 7 V MHz pF TYP MAX UNIT V V V nA nA
IC=-100μA,IE=0 IC=-1mA,IB=0 IE=-100μA,IC=0 VCB=-50V,IE=0 VEB =-5V, IC=0 VCE=-6V,IC=-2mA IC=-100mA,IB=-10mA VCE=-10V,IC=-1mA VCB=-10V,IE=0,f =1MHz
CLASSIFICATION OF Rank Range Marking
hFE Y 120-240 SY GR 200-400 SG
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2SA1832
Typical Characteristics
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2SA1832
SOT-523 Outline Dimensions (SC-75)
SOT-523
Min 0.30 0.70 1.45 0.15 0.80 1.40 0.00 0.70 0.37 0.10 Max 0.50 0.90 1.75 0.50 0.40 1.00 1.80 0.10 1.00 0.48 0.25
Unit:mm
A
TOP VIEW D E G H
B
J
L
M
Dim A B C D E G H J K L M
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30-Jan-08
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