2SA812

2SA812 PNP General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Value -60 -50 -5.0 -100 200 +150 -55 to +150 Unit V V V mA mW °C °C WEITRON http://www.weitron.com.tw 1/3 08-Dec-06 2SA812 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC = -100µA, IE = 0A Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0A Emitter-Base Breakdown Voltage IE= 100µA, IC=0 Collector Cutoff Current VCB = -60V, IE = 0A Emitter Cutoff Current VEB = -5V, IC = 0A Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -60 -50 -5.0 - Typ - Max -0.1 -0.1 Unit V V V µA µA ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = -100mA, IB = -10mA Collector-Emitter Voltage IC = -1mA, VCE = -6V, DC Current Transfer Ration VCE = -6V, IC = -1mA VCE(sat) VBE(on) hFE 90 -0.3 -0.68 600 V V SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE=-6V, IC = -10mA fT 180 MHz CLASSIFICATION hFE Range Marking 90-180 M4 135-270 M5 200-400 M6 300-600 M7 WEITRON http://www.weitron.com.tw 2/3 08-Dec-06 2SA812 SOT-23 Outline Dimension A SOT-23 Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 TOP VIEW D E G H B C K J L M WEITRON http://www.weitron.com.tw 3/3 08-Dec-06