2SB1182

2SB1182 PNP PLASTIC ENCAPSULATE TRA NSISTORS P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits -40 -32 -5.0 -2.0 1.5 +150 -55 to +150 Unit V V V A W ˚C ˚C ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=-50µA Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -40 -32 -5.0 Typ Max -1.0 -1.0 Unit V V V µA µA Collector-Emitter Breakdown Voltage IC=-1.0mA Emitter-Base Breakdown Voltage IE=-50µA VCB=-20V VEB =-4.0V WEITRON http://www.weitron.com.tw 1/5 30-Nov-07 2SB1182 ON CHARACTERISTICS DC Current Gain VCE=-3V, IC=-500mA Collector-Emitter Saturation Voltage IC =-2A, IB =-200mA hFE(1) VCE(sat) 82 390 -0.8 V DYNAMIC CHARACTERISTICS Transition Frequency VCE=-5V, IC =-500mA, f=30MHz Output Capacitance VCB=-10V, I E =0, f=1.0MHz fT Cob 100 50 MHz pF CLASSIFICATION OF hFE(1) Rank Range P 82 - 180 Q 120 - 270 R 180 - 390 WEITRON http://www.weitron.com.tw 2/5 30-Nov-07 2SB1182 Typical Characteristics VCE= −3V COLLECTOR CURRENT : IC (mA) −0.5 COLLECTOR CURRENT : IC (A) Ta=25°C −1000 Ta=100°C 25°C −500 −40°C −200 −100 −50 −20 −10 −5 −2 −1 −2.5mA −2.25mA −0.4 −2mA −1.75mA −1.5mA −1.25mA −0.3 −0.2 −1mA −750µA −500µA −0.1 0 −250µA 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2 BASE TO EMITTER VOLTAGE : VBE (V) 0 −0.4 −0.8 −1.2 IB=0A −1.6 −2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics 500 DC CURRENT GAIN : hFE Fig.2 Grounded emitter output characteristics 500 DC CURRENT GAIN : hFE Ta=25°C VCE= −6V −3V −1V VCE= −3V Ta=100°C 25°C −25°C 200 200 100 100 50 50 20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector curren ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Fig.4 DC current gain vs. collector current ( ) −500 lC/lB=10 −500 Ta=25°C −200 −200 −100 −50 −100 IC/IB=50 20 10 Ta=100°C 25°C −40°C −50 −20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.5 Collector-emitter saturation voltage vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) WEITRON http://www.weitron.com.tw 3/5 30-Nov-07 2SB1182 Typical Characteristics BASE SATURATION VOLTAGE : VBE(sat)(V) TRANSITION FREQUENCY : fT (MHz) Ta=25°C −1 IC /IB=10 −0.5 500 Ta=25°C VCE= −5V 200 100 −0.2 −0.1 −0.05 50 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 5 10 20 50 100 200 500 1000 2000 COLLETOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.7 Base-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Fig.8 Gain bandwidth product vs. emitter current −5 IC Max. (Pulse) DC 300 200 100 50 20 10 Cib COLLECTOR CURRENT : IC (A) Ta=25°C f=1MHz IE=0A IC=0A Cob PW=500µs −2 −1 −0.5 −0.2 −0.1 PW=1ms PW=100ms −0.5 −1 −2 −5 −10 −20 −30 Ta=25°C ?Single nonrepetitive pulse −0.01 −0.1 −0.2 −0.5 −1 −0.02 −0.05 −2 −5 −10 −20 −50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.10 Safe operation area WEITRON http://www.weitron.com.tw 4/5 30-Nov-07 2SB1182 TO-252 Outline Dimensions unit:mm E A 4 G H J 1 2 3 B TO-252 Dim A B C D E G H J K L M M D C L K Min 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90 Max 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 WEITRON http://www.weitron.com.tw 5/5 30-Nov-07