2SB1386_05

2SB1386 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat) 2 3 SOT-89 Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA = 25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Value -30 -20 -6 -5 0.5 +150 -55 to +150 Unit V V V A W ˚C ˚C WEITRON http://www.weitron.com.tw 1/4 28-Oct-05 2SB1386 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=-50µA, IE=0 Collector-Emitter Breakdown Voltage IC=-1.0mA, IB=0 Emitter-Base Breakdown Voltage IE=-50µA, IC=0 Collector Cut-Off Current VCB=-20V, IE=0 Emitter-Cut-Off Current VEB=-5V, IC=0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -30 -20 -6 Typ Max -500 -500 Unit V V V nA nA ON CHARACTERISTICS DC Current Gain VCE=-2V, IC=-0.5A Collector-Emitter Saturation Voltage IC=-4A, IB=-0.1A hFE(1) VCE(sat) 82 390 -1.0 V DYNAMIC CHARACTERISTICS Transition Frequency VCE=-6V, IE=-50mA, f=30MHz Output Capacitance VCB=-20V, IE=0, f=1.0MHz fT Cob 120 60 MHz pF CLASSIFICATION OF hFE(1) Rank Range Marking P 82 - 180 BHP Q 120 - 270 BHQ R 180 - 390 BHR WEITRON http://www.weitron.com.tw 2/4 28-Oct-05 2SB1386 5k 2k DC CURRENT GAIN : hFE TA=25°C DC CURRENT GAIN : hFE 5k 2k 1k 500 200 100 50 20 10 5 VCE= −2V 1k 500 200 100 50 20 10 5 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −2V −1V Ta=100°C 25°C −25°C −5 −10 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC(A) Fig.1 DC current gain vs collector current −5 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −2m −5m −0.01 -0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 Fig.2 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −5 −2 −1 lC/lB=40 COLLECTOR CURRENT : IC(A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TA=25°C −25°C 25°C −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 IC/IB=50/1 40/1 /1 30/1 10/1 Ta=100°C COLLECTOR CURRENT : IC(A) Fig.3 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 500 Fig.4 Collector-emitter saturation voltage vs. collector current COLLECTOR CURRENT : IC(A) TA=25°C f=1MHz IE=0A 200 100 50 20 10 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.5 Collector output capacitance vs. collector-base voltage WEITRON http://www.weitron.com.tw 3/4 28-Oct-05 2SB1386 SOT-89 Outline Dimensions unit:mm E G Dim A SOT-89 J C H K L B D A B C D E G H J K L Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 WEITRON http://www.weitron.com.tw 4/4 28-Oct-05