2SB1412

2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 2 3 Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA = 25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Value -30 -20 -6 -5 1.0 +150 -55 to +150 Unit V V V A W ˚C ˚C Device Marking 2SB1412 = B1412 WEITRON http://www.weitron.com.tw 1/4 28-Oct-05 2SB1412 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=-50µA, IE=0 Collector-Emitter Breakdown Voltage IC=-1.0mA, IB=0 Emitter-Base Breakdown Voltage IE=-50µA, IC=0 Collector Cut-Off Current VCB=-20V, IE=0 Emitter-Cut-Off Current VEB=-5V, IC=0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -30 -20 -6 Typ Max -500 -500 Unit V V V nA nA ON CHARACTERISTICS DC Current Gain VCE=-2V, IC=-0.5A Collector-Emitter Saturation Voltage IC=-4A, IB=-0.1A hFE VCE(sat) 82 390 -1.0 V DYNAMIC CHARACTERISTICS Transition Frequency VCE=-6V, IE=-50mA, f=30MHz Output Capacitance VCB=-20V, IE=0, f=1.0MHz fT Cob 120 60 MHz pF CLASSIFICATION OF hFE Rank Range P 82 - 180 Q 120 - 270 R 180 - 390 WEITRON http://www.weitron.com.tw 2/4 28-Oct-05 2SB1412 5k 2k DC CURRENT GAIN : hFE TA=25°C DC CURRENT GAIN : hFE 5k 2k 1k 500 200 100 50 20 10 5 VCE= −2V 1k 500 200 100 50 20 10 5 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −2V −1V Ta=100°C 25°C −25°C −5 −10 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC(A) Fig.1 DC current gain vs collector current −5 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −2m −5m −0.01 -0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 Fig.2 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −5 −2 −1 lC/lB=40 COLLECTOR CURRENT : IC(A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TA=25°C −25°C 25°C −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 IC/IB=50/1 40/1 /1 30/1 10/1 Ta=100°C COLLECTOR CURRENT : IC(A) Fig.3 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 500 Fig.4 Collector-emitter saturation voltage vs. collector current 100 50 Ta=25°C Single nonrepetitive pulse COLLECTOR CURRENT : IC(A) COLLECTOR CURRENT : IC (A) TA=25°C f=1MHz IE=0A 20 10 5 2 1 500m 200m 100m ∗ s 0m =1 Pw ms 00 =1 Pw 200 100 50 DC 20 10 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO BASE VOLTAGE : VCB(V) COLLECTOR TO EMITTER VOLTAGE : -VCE(V) Fig.5 Collector output capacitance vs. collector-base voltage Fig.6 Safe operation area F WEITRON http://www.weitron.com.tw 3/4 28-Oct-05 2SB1412 TO-252 Outline Dimensions unit:mm E A 4 G H J 1 2 3 B TO-252 Dim A B C D E G H J K L M M D C L K Min 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90 Max 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 WEITRON http://www.weitron.com.tw 4/4 28-Oct-05