2SB624

2SB624 PNP Epitaxial Planar Transistors P b Lead(Pb)-Free 3 2 1 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits -30 -25 -5 -700 200 150 -55 to +150 Unit V V V A mW ˚C ˚C ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=-100µA, IE =0 Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICBO IEBO -30 -25 -5 - - -0.1 -0.1 V V V µA µA Collector-Emitter Breakdown Voltage IC=-1mA, IB =0 Emitter-Base Breakdown Voltage IE=-100µA, IC =0 Collector Cutoff Current VCB=-30V, IE =0 Emitter Cutoff Current VEB =-5V, IE =0 WEITRON http://www.weitron.com.tw 2SB624 ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VCE=-1V, I C =-100mA VCE=-1V, I C =-700mA Collector-Emitter Saturation Voltage IC=-700mA, IB =-70mA Base-Emitter Voltage VCE=-6V, I C =-10mA 1. Pulse Test: Pulse Width ≤ 350µs, Duty Cycle ≤ 2% hFE1 hFE2 VCE(sat) VBE(on) 110 50 -0.6 400 -0.6 -0.7 V V DYNAMIC CHARACTERISTICS Transition Frequency VCE=-6V, IC =-10mA Output Capacitance VCB=-6V, IE=0, f=1MHz fT Cob 160 17 MHz pF CLASSIFICATION OF hFE1 Marking Rank hFE1 BV1 1 110-180 BV2 2 135-220 BV3 3 170-270 BV4 4 200-320 BV5 5 250-400 WEITRON http://www.weitron.com.tw 2/4 16-Aug-05 2SB624 ELECTRICAL CHARACTERISTIC CURVES 250 -100 -500 -400 -350 -300 -250 -200 -150 -100 IB= -50µA PT =2 00 PT - Total Power Dissipation (mW) IC-Collector Current(mA) Free air -450 200 150 100 50 0 -80 -60 -40 -20 0 m W 0 25 50 75 100 125 150 TA-Ambient Temperature (˚C) 0 -2 -4 -6 -8 -10 VCE-Collector to Emitter Voltage(V) Fig.1 TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE -1000 VCE = -6.0V Pulsed Fig.2 COLLECTOR CURRENT VS. COLLECTOR TO EMITTER VOLTAGE 1000 IC - Collector Current (mA) hFE - DC Current Gain -100 VCE = -1.0V Pulsed 100 -10 10 1 -0.1 -0.4 -0.5 -0.1 -0.1 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1 -10 -100 -1000 VBE - Base to Emitter Voltage (V) IC - Collector Current (mA) Fig.3 COLLECTOR CURRENT VS. BASE TO EMITTER VOLTAGE 10 IC = 10·IB Pulsed Fig.4 DC CURRENT GAIN VS. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage (V) VCE - Collector to Emitter Voltage (V) -1.0 IC = -100mA IC = -200mA IC = -250mA IC = -500mA VBE(sat) - Base Saturation Voltage (V) Pulsed -1 -0.8 -0.6 -0.4 -0.2 0 -0.1 -0.01 -0.001 -0.1 -1 -10 -100 -1000 0.1 -1 -10 -100 IC - Collector Current (mA) IB - Base Current (mA) Fig.5 BASE AND COLLECTOR SATURATION VOLTAGE VS. COLLECTOR CURRENT Fig.6 COLLECTOR TO EMITTER VOLTAGE VS. BASE CURRENT WEITRON http://www.weitron.com.tw 3/4 16-Aug-05 2SB624 SC-59 Outline Dimension A L S 3 Top View Dim Unit:mm SC-59 Min 2.70 1.30 1.00 0.35 1.70 0.00 0.10 0.20 1.25 2.25 Max 3.10 1.70 1.30 0.50 2.30 0.10 0.26 0.60 1.65 3.00 A B C D G H J K L S 2 1 B D G C H K J All Dimension in mm WEITRON http://www.weitron.com.tw 4/4 16-Aug-05