2SB649

2SB649/2SB649A PNP Epitaxial Planar Transistors P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg -120 6.0 -1.5 1.0 +150 -55 to +150 2SB649 -180 -160 2SB649A Unit V V V A W ˚C ˚C WEITRON http://www.weitron.com.tw 1/5 21-Mar-06 2SB649/2SB649A ELECTRICAL CHARACTERISTICS ( TA=25°C unless otherwise noted) (Countinued) Characteristics Collector-Emitter Breakdown Voltage IC = -1.0mA, IE = 0 Collector-Base Breakdown Voltage 2SB649 IC = -10mA, IB = 0 2SB649A Emitter-Base Breakdown Voltage IC = 0, IE = -1.0mA Collector Cutoff Current VCB = -160V, IE = 0 Emitter Cutoff Current VEB = -4.0V, IC = 0 Symbol V(BR)CBO Min -180 -120 -160 -5.0 Typ Max Unit V V(BR)CEO V(BR)EBO ICBO IEBO - -10 -10 V V µA µA ON CHARACTERISTICS DC Current Gain VCE = -5.0V, IC = -150mA VCE = -5.0V, IC = -500mA Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA Base-Emitter Voltage VCE = -5.0V, I C = -150mA Transition frequency VCE = -5.0V, I C = -150mA Collecotr Output Capacitance VCB = -10V, I E = 0, f = 1MHz 2SB649 2SB649A hFE(1) 60 60 30 140 27 320 200 -1.0 -1.5 V V MHz pF - hFE(2) VCE(sat) VBE fT Cob - CLASSIFICATION OF hFE(1) Rank Range B 60-120 C 100-200 D 160-320 WEITRON http://www.weitron.com.tw 2/5 21-Mar-06 2SB649/2SB649A 30 Collector power dissipation PC (W) –3 Collector current IC (A) –1.0 (–40 V, –0.5 A) –0.3 –0.1 DC Operation (TC = 25°C) (–120 V, –0.038 A) 2SB649 (–160 V, –0.02 A) 2SB649A ICmax (–13.3 V, –1.5 A) 20 10 –0.03 0 50 100 150 –0.01 –1 Fig.1 Maximum Collector Dissipation Curve –5 .5 Case temperature TC (°C) Fig.2 Area of Safe Operation –500 VCE = –5 V Collector current IC (mA) –100 –3 –10 –30 –100 –300 Collector to emitter voltage VCE (V) –1.0 –0.8 –0.6 –0.4 –0.2 Collector current IC (A) Ta = 75°C 0 IC = 10 IB 0 5. ––4.5 .0 –4 .5 –3 0 – 3. 2.5 – –2.0 TC = 25°C –1.5 –1.0 –0.5 mA –10 IB = 0 0 –30 –50 –10 –20 –40 Collector to emitter voltage VCE (V) –1 Fig.3 Typical Output Characteristecs Fig.4 Typical Transfer Characteristics Collector to emitter saturation voltage VCE(sat) (V) –0.2 –0.4 –0.6 –0.8 –1.0 Base to emitter voltage VBE (V) 350 DC current transfer ratio hFE 350 250 200 150 100 50 VCE = –5V Ta = 75°C 25 °C –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 –0 –1 Ta –10 –100 Collector current IC (mA) 0 –1 =7 5°C –25 25 –1,000 –25°C –10 –100 –1,000 Collector current IC (mA) Fig.5 DC Current Transfer Ratio vs. Collector Current Fig.6 Collector to Emitter Saturation Voltage vs. Collector Current WEITRON http://www.weitron.com.tw 3/5 25 –25 PC = 20 W 21-Mar-06 2SB649/2SB649A –1.2 Base to emitter ON voltage VBE (V) –1.0 –0.8 –0.6 –0.4 –0.2 240 Gain bandwidth product fT (MHz) IC = 10 IB C –25° Ta = 25 75 VCE = –5 V 200 160 120 80 40 0 –10 –0 –1 –10 –100 Collector current IC (mA) –1,000 –100 –300 –30 Collector current IC (mA) –1,000 Fig.7 Base to Emitter Voltage vs. Collector Current Fig.8 Gain Bandwidth Product vs. Collector Current Collector output capacitance Cob (pF) 200 100 50 20 10 5 2 –1 f = 1 MHz IE = 0 Fig.9 Collector Output Capacitance vs. Collector to Base Voltage –3 –10 –30 –100 Collector to base voltage VCB (V) WEITRON http://www.weitron.com.tw 4/5 21-Mar-06 2SB649/2SB649A TO-126C Outline Dimensions unit:mm TO-126C Dim A A1 b b1 c D E e e1 L L1 P Φ1 Φ2 Min 3.000 1.800 0.660 1.170 0.450 7.800 10.800 4.460 15.100 1.300 4.040 2.700 3.100 Max 3.400 2.200 0.860 1.370 0.600 8.200 11.200 4.660 15.500 1.500 4.240 2.900 3.300 2.280 TYP WEITRON http://www.weitron.com.tw 5/5 21-Mar-06