2SB766A

2SB766A PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value -60 -50 -5 -1 500 150 -55-150 Units V V V A mW ℃ ℃ SOT-89 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector-emitter saturation voltage Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) VB E(sat) fT Cob Test IC=-10μA, IE=0 IC=-2mA, IB=0 IE=-10μA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-500mA VCE=-5V , IC=-1A IC=-500m A, IB=-50mA IC=-500m A, IB=-50mA VCE=-10 V, IC=- 50mA, f=200MHz VCB=-10V, IE=0, f=1MHz conditions MIN -60 -50 -5 TYP MAX UNIT V V V μA μA -0.2 -0.85 200 20 -0.1 -0.1 340 85 50 -0.4 -1.2 V V MHz pF - 30 CLASSIFICATION OF Rank Range Marking hFE Q 85-170 BQ R 120-240 BR S 170-340 BS WEITRON http://www.weitron.com.tw 1/3 26-Dec-08 2SB766A WEITRON http://www.weitron.com.tw 2/3 26-Dec-08 2SB766A SOT-89 Outline Dimensions unit:mm E G Dim A SOT-89 J C H K L B D A B C D E G H J K L Min Max 1.600 1.400 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 3.100 2.900 WEITRON http://www.weitron.com.tw 3/3 26-Dec-08