2SB772

2SB772 2SD882 PNP/NPN Epitaxial Planar Transistors TO-126 1 . EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Collector Current (Pulse) Base Current Total Device Disspation TA =25 C Total Device Dissipation Tc=25 C Junction Temperature Storage, Temperature (1) Symbol VCEO VCBO VEBO IC(DC) IC (Pulse) IB(Pulse) PD PD Tj Tstg PNP/2SB772 -30 -40 -5.0 -3.0 -7.0 -0.6 NPN/2SD882 30 40 5.0 3.0 7.0 0.6 1.0 10 150 Unit Vdc Vdc Vdc Adc Adc Adc W W C C -55 to +150 Device Marking 2SB772=B772 , 2SD882=D882 ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= -10/10 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100/100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -100/100 µAdc, IC=0) Collector Cutoff Current (VCE= -30/30 Vdc, I B =0) Collector Cutoff Current (VCB= -40/40 Vdc, IE=0) Emitter Cutoff Current (VEB= -6.0/6.0Vdc, I C =0) NOTE: 1.PW 350us, duty cycle 2% Symbol Min Max -1.0/1.0 -1.0/1.0 -1.0/1.0 Unit Vdc Vdc Vdc uAdc uAdc uAdc V(BR)CEO -30/30 V(BR)CBO -40/40 V(BR)EBO -5.0/5.0 ICE0 ICBO IEBO - WEITRON http://www.weitron.com.tw 2SB772 2SD882 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc) DC Current Gain (IC= -100/100 mAdc, VCE= -2.0/2.0 Vdc) Collector-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc) Base-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc) Current-Gain-Bandwidth Product (IC= -0.1/0.1 mAdc, VCE=-5.0/5.0 Vdc, f=10MHz) hFE (1) hFE (2) VCE(sat) VBE(sat) fT 60 32 - - 400 -0.5/0.5 -2.0/2.0 Vdc Vdc 80/90 - MHz Classification of hFE(1) Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400 WEITRON http://www.weitron.com.tw 2SB772 2SD882 F1. Total Power Dissipation VS. Ambient Temperature NOTE F.2 Derating Curve for All Types dT-Percentage of Rated Current-% PT-Total Power Dissipation-W 10 8 in 1. Aluminum heat sink of 1.0 mm thickness. 2. With no insulator film. 3. With silicon compound. 100 80 60 40 20 0 0 50 S/ bl 6 4 2 0 10 25 9 cm 2 im i ted ti pa si is D cm 0c m 2 fin 2 ite he at si nk on lim ite d Without heat sink 50 100 150 100 150 Ta-Amient Temperature-°C Tc,Case Temperature(°C) F4. Safe Operating Areas 10 Ic(max),Pulse Ic(max),DC F3. Thermal Resistance VS. Pulse Width 4Rth-Thermal Resistance- C/W ° 30 10 -Ic,Collector Current(A) VCE=10V IC =1.0A Duty=0.001 10 PW (Duty< 10 ms50 %) P Cycle < mS 1m S W =1 3 00 1 1 0.1 0.3 0.03 0.01 NOTE 1. Tc=25 C 2. Curves must be derated linearly with increase of temperature and Duty Cycle. 1 3 6 10 0.1 0.3 1 3 10 30 100 300 1000 30 VCEO MAX 60 3 0.3 Di s L sipa (S ing imite tion d le no nr s/b ep L im eti tiv ite ep d u ls e) PW-Pulse Width-ms VCE-Collector to Emitter Voltage-V S 1m 0. us 100 F5. Collector Current VS. Collector To Emitter Voltage -2.0 2SB772 2SD882 F6. Collector Current VS. Collector To Emitter Voltage 2.0 -Ic,Collector Current(A) -Ic,Collector Current(A) -1.6 -1.2 Pulse Test IB=-10mA IB=-9mA IB=-8MA IB=-7mA IB=-6mA IB=-5mA IB=-4mA IB=-3mA IB=-2mA IB=-1mA 0 Pulse Test IB=10mA IB=9mA IB=8MA IB=7mA IB=6mA IB=5mA IB=4mA IB=3mA IB=2mA IB=1mA 0 1.6 1.2 -0.8 0.8 -0.4 0.4 0 -4 -8 -12 -16 -20 0 vCE -Collector-Emitter Voltage(V) 4 8 12 16 20 vCE -Collector-Emitter Voltage(V) WEITRON http://www.weitron.com.tw 2SB772 2SD882 VCE(sat)-Collector Saturation Voltage(V) F7. 1000 600 VBE(sat)-Base Saturation Voltage(V) h FE, VBE -I c F8. VCE(sat), VBE(sat),-Ic 10 6 3 1 0.6 0.3 0.1 0.06 0.03 0.01 0.006 0.003 hFE , -DC Current Gain 2SB772 h FE VCE=2.0V Puse Test 300 100 60 30 10 6 3 1 0.001 0.003 0.01 VBE(sat) 2SB772 2SD882 2SD882 t) sa VBE 2SB772 2SD882 2SB772 VC E( 2SD 8 82 0.03 0.1 0.3 1 3 10 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 Ic-Collector Current(A) Ic-Collector Current(A) F9. fT - Ic f T -Gain Bandwidth Product(MHZ) 1000 F10. Cob -VCB , Cib -VCE Cob-Output Capacitance(PF ) Cib-Input Capacitance(PF ) 300 100 VCE=5.0V Forecd air Cooling (with heat sink) 300 100 60 30 2SD8 82 2SB77 2 Cib f=1.0MHz I E =0(Cob) IC=0(Cib) 2SB772 2SD882 2SB77 2 30 10 2SD8 82 Cob 10 6 3 3 1 0.01 1 3 6 10 30 60 0.03 0.1 0.3 1 VCB -Collector to Base Voltage(V) VEB -Emitter to Base Voltage(V) Ic-Collector Cu rent(A) r WEITRON http://www.weitron.com.tw 2SB772 2SD882 TO-126 Outline Dimensions unit:mm G B A H D L J K M C E S φ Dim A B C D E G H J K L M S TO-126 φ MAX Min 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290TYP 4.480 4.680 15.300 15.700 2.100 2.300 3.900 4.100 3.200 3.000 WEITRON http://www.weitron.com.tw