2SB985

2SB985 PNP General Purpose Transistors P b Lead(Pb)-Free 2 3 1.EMITTER 3.BASE 2.COLLECTOR 1 TO-92MOD MAXIMUM RATINGS(Ta=25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value -50 -60 -6.0 -3.0 0.9 150 -55 to 150 Unit V V V mA mW °C °C WEITRON http://www.weitron.com.tw 1/5 19-Feb-09 2SB985 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) VCE=-2V, IC=-3A IC=-2A, IB=-100mA IC=-2A, IB=-100mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz 150 39 Test IC=-10μA, IE=0 IC=-1mA, IB=0 IE=-10μA, IC=0 VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-100mA conditions MIN TYP MAX UNIT V V V -60 -50 -6 -1 -1 100 40 -0.7 -1.2 560 μA μA V V MHz pF fT Cob CLASSIFICATION OF Rank Range hFE(1) R 100-200 S 140-280 T 200-400 U 280-560 WEITRON http://www.weitron.com.tw 2/5 19-Feb-09 2SB985 WEITRON http://www.weitron.com.tw 3/5 19-Feb-09 2SB985 WEITRON http://www.weitron.com.tw 4/5 19-Feb-09 2SB985 TO-92MOD Outline Dimensions G unit:mm TO-92MOD J D C K L Di m A B C D E G J K L M M in M ax 4.70 5.10 1.73 2.03 0.40 0.60 0.90 1.10 0.40 0.50 5.80 6.20 8.40 8.80 1.50Typ 2.90 3.10 12.20 13.45 B M WEITRON http://www.weitron.com.tw E A 5/5 19-Feb-09