2SC1008

WEITRON NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 2SC1008 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO ICM PCM TJ Tstg Value 80 0.7 0.8 -55 to +150 -55 to +150 Units V A W °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition Frequency CLASSIFICATION OF h FE Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO IEBO hFE VCE(sat) V BE(sat) fT Test conditions IC= 100µA, I E=0 IC= 10mA, IB =0 IE= 10µA, I C =0 VCB= 60V, I E =0 VEB= 5V, IC =0 VCE = 2V, I C = 50mA IC=500mA, IB= 50mA IC=500mA, IB= 50mA VCE=10V,IC=50mA MIN 80 60 8 TYP MAX Units V V V 0.1 40 0.1 400 0.4 1.1 30 µA µA V V MHz Rank Range R 40-80 O 70-140 Y 120-240 G 200-400 WEITRON hpp://www.weitron.com.tw 1/3 15-Feb-2011 2SC1008 Typical Characteristics WEITRON hpp://www.weitron.com.tw 2/3 15-Feb-2011 2SC1008 TO-92 Outline Dimensions E unit:mm TO-92 H C J K G Dim A B C D E G H J K L M in Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A 3/3 15-Feb-2011