2SC1623_10

2SC1623 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation FR-5 Board TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Value 50 60 7 150 225 1.8 556 300 2.4 417 -55 to+150 -55 to +150 Unit V V V mA mW mW/°C °C/W mW mW/°C °C/W °C °C RθJA PD RθJA Tj Tstg WEITRON http://www.weitron.com.tw 1/5 Rev.A 30-Jul-10 2SC1623 ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS VCB = 60V, I E = 0 VEB = 5V, I C = 0 ICBO IEBO 0.1 0.1 µA µA Symbol Min Typ Max Unit ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = 100mA, I B = 10mA Base-Emitter Saturation Voltage IC = 100mA, I B = 10mA Base-Emitter On Voltage IC = 1mA,VCE=6.0V DC Current Transfer Ration VCE = 6V, I C = 1mA VCE(sat) VBE(sat) VBE hFE 0.55 120 0.15 0.86 0.62 0.3 1.0 0.65 560 V V V SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE = 6V, IC =10mA Output Capacitance(VCE = 6V, IE=0, f=1.0MHz) fT Cob 250 3 MHz Pf CLASSIFICATION hFE Rank Range Marking Q 120-270 L5 R 180-390 L6 S 270-560 L7 WEITRON http://www.weitron.com.tw 2/5 Rev.A 30-Jul-10 2SC1623 50 VCE= 6 V 20 100 0.50mA T A = 25°C I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) 80 10 50 T A = 100°C 25°C 60 2 1 – 55°C 40 0.5 20 0.2 0.1 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6 0 0 0.4 0.8 1.2 1.6 2.0 V BE , BASE TO EMITTER VOLTAGE(V) V CE , COLLECTOR TO EMITTER VOLTAGE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( ) 10 500 I C, COLLECTOR CURRENT (mA) 8 6 h FE, DC CURRENT GAIN 0 4 8 12 16 20 200 100 4 50 2 20 0 10 0.2 0.5 1 2 5 10 20 50 100 200 V CE , COLLECTOR TO EMITTER VOLTAGE (V) I C, COLLECTOR CURRENT (mA) Fig.3 Grounded emitter output characteristics( ) Fig.4 DC current gain vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) 500 0.5 0.2 h FE, DC CURRENT GAIN 200 0.1 100 0.05 50 0.02 20 0.01 0.2 0.5 1 2 5 10 20 50 100 200 10 0.2 0.5 1 2 5 10 20 50 100 200 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current WEITRON http://www.weitron.com.tw 3/5 Rev.A 30-Jul-10 2SC1623 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) 0.5 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.01 0.2 0.5 1 2 5 10 20 50 100 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( I) Fig.8 Collector-emitter saturation voltage vs. collector current ( ) C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) 20 f r , TRANSITION FREQUENCY(MHz) 500 10 5 200 2 100 1 0.2 0.5 1 2 5 10 20 50 50 –0.5 –1 –2 –5 –10 –20 –50 –100 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) I E, EMITTER CURRENT (mA) Fig.9 Gain bandwidth product vs. emitter current Fig.10 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C c-r bb, BASE COLLECTOR TIME CONSTANT( ps) 200 100 50 20 10 –0.2 –0.5 –1 –2 –5 –10 I E, EMITTER CURRENT (mA) Fig.11 Base-collector time constant vs.emitter current WEITRON http://www.weitron.com.tw 4/5 Rev.A 30-Jul-10 2SC1623 SOT-23 Outline Dimension SOT-23 Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 A TOP VIEW B C D E G H K L J M WEITRON http://www.weitron.com.tw 5/5 Rev.A 30-Jul-10